• 제목/요약/키워드: Ag-Pd

검색결과 221건 처리시간 0.022초

Ni/Cu 금속 전극이 적용된 결정질 실리콘 태양전지의 Ni silicide 형성의 관한 연구 (Investigation of Ni Silicide formation for Ni/Cu contact formation crystalline silicon solar cells)

  • 이지훈;조경연;이수홍
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.434-435
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    • 2009
  • The crystalline silicon solar cell where the solar cell market grows rapidly is occupying of about 85% or more. high-efficiency and low cost endeavors many crystalline silicon solar cells. the fabrication processes of high-efficiency crystalline silicon solar cells necessitate complicated fabrication processes and Ti/Pd/Ag contact, however, this contact formation processed by expensive materials. Ni/Cu contact formation is good alternative. in this paper, according to temperature Ni silicide makes, produced Ni/Cu contact solar cell and measured conversion efficiency.

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적층형 세라믹 액츄에이터의 전기-기계거동 (Electro-mechanical properties of Multilayer Ceramic Actuators)

  • 정순종;고중혁;송재성;홍원표;최원종
    • 한국공작기계학회:학술대회논문집
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    • 한국공작기계학회 2004년도 춘계학술대회 논문집
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    • pp.478-481
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    • 2004
  • This study presents the combined effect of electric Held application and mechanical compressive stress loading on deformation in a multilayer ceramic actuator, designed with stacking alternatively 0.2(PbMn$\_$1/3/Nb$\_$2/3/O$_3$)-0.8(PbZr$\_$0.475/Ti$\_$0.525/O$_3$) ceramics and Ag-Pd electrode. The deformation behaviors were thought to be attributed to relative 180$^{\circ}$domain quantities which is determined by pre-loaded stress and electric field. The non-linearity of piezoelectricity and strain are dependent upon the young's modulus resulting from the domain reorientation.

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마이크로파 소결법을 이용한 Bi0.5Na0.5TiO3계 적층형 세라믹 액추에이터 제조 (Preparation of Bi0.5Na0.5TiO3-Based Multilayer Ceramic Actuators Using Microwave Sintering)

  • 강진규;이재신
    • 한국전기전자재료학회논문지
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    • 제27권11호
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    • pp.702-706
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    • 2014
  • A comparative study has been attempted for microwave and conventional sintering of lead-free $Bi_{0.5}Na_{0.5}TiO_3(BNT)$-based multilayer ceramic actuators(MLAs). It was found that microwave sintering (MWS) could be successfully applied to the co-firing of piezoceramic/AgPd MLAs with a 10 times shorter firing cycle as well as $100^{\circ}C$ lower firing temperature ($850^{\circ}C$) for sufficient densification than conventional furnace sintering ($950^{\circ}C$). Furthermore, MWS-derived specimens showed better electric field-induced strain than that of CFS-derived specimens by effectively suppressing interdiffusions between ceramic and electrode layers.

기계적 변형하에서 금속재료의 표면응력 계산 (Calculations of Surface Stresses in Metals Under Mechanical Strains)

  • 김성엽;엄윤용
    • 대한기계학회논문집A
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    • 제32권3호
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    • pp.250-257
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    • 2008
  • We calculate the variation of the surface stresses according to uniaxial and biaxial strains in face-centered cubic (FCC) metals. In our study, three mainly observed free surfaces of seven representative FCC metals are considered. Employed method is molecular mechanics, in which the interaction of atoms is described by empirical interatomic potentials. As uniaxial strain increases to tensile direction, the surface stresses on {100} and {110} free surfaces decrease monotonously, while those on {111} surface increase. These tendencies are the same regardless of the species of metals and interatomic potentials employed. However, when the system is under biaxial strain, surface stresses change different according to the surface directions, the species of metals, and even interatomic potentials. On {100} and {111} surfaces, heavy metals (Pt, Au) show the opposite variation to light metals (Ni, Cu). In the cases of Pd and Ag, the surface stresses reveal the opposite tendency, depending on interatomic potentials used.

전자부품의 접합재료로서의 Sn도금막 형성 조건 및 도금막의 특성에 관한 연구 (A study on plating conditions and characteristics of Sn layers as inserted metals for electronic component)

  • 신영의;임민빈;김경섭
    • E2M - 전기 전자와 첨단 소재
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    • 제6권6호
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    • pp.505-513
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    • 1993
  • 본 논문은 전자 부품의 Soldring기에 사용되는 접합제를 Flux를 포함한 Solder paste 대신에 도금막을 이용하기 위한 Sn 도금막 형성 프로세스를 검토한 것이다. 반도체 Device를 Packaging한 외부단자(lead frame)과 HIC상의 후막전극(Ag/Pd)과의 접합 및 PCB상의 Cu land와의 접합시에는 스크린 프린트에 의한 Solder Paste가 일반적으로 사용되고 있다. 본 논문은 Fluxless Soldering의 한수단으로 도금막을 lead상에 형성시켜 접합 재료로서의 형성 프로세스 및 도금막의 특성과 도금형성 Paramete와의 관련성을 실험적으로 검토한 것으로 전류밀도 200 A/m$^{2}$의 조건으로 형성한 Sn 도금막이 접합용으로 최적조건임을 밝혔다.

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이종 전자재료 JO1NT 부위의 신뢰성에 관한 연구 (A Study on Reliability of Solder Joint in Different Electronic Materials)

  • 신영의;김경섭;김형호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1993년도 추계학술대회 논문집
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    • pp.49-54
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    • 1993
  • This paper discusses the reliability of solder joints of electronic devices on printed circuit board. Solder application is usually done by screen printing method for the bonding between outer leads of devices and thick film(Ag/Pd) pattern on Hybrid IC as wel1 as Cu lands on PCB. As result of thermal stresses generated at the solder joints due to the differences of thermal expansion coefficients between packge body and PCB, Micro cracking often occurs due to thermal fatigue failure at solder joints. The initiation and the propagate of solder joint crack depends on the environmental conditions, such as storage temperature and thermal cycling. The principal mechanisms of the cracking pheno- mana are the formation of kirkendal void caused by the differences in diffusion rate of materials, ant the thermal fatigue effect due to the differences of thermal expansion coefficient between package body and PCB. Finally, This paper experimentally shows a way to supress solder joints cracks by using low-${\alpha}$ PCB and the packages with thin lead frame, and investigates the phenomena of diffusion near the bonding interfaces.

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스크린 프린팅법으로 제조된 PAN-PZT 후막의 특성 (Charicteristics of PAN-PZT Thick Films on Si-Substrate by Screen Printing)

  • 김상종;최지원;김현재;성만영;윤석진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.139-142
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    • 2002
  • Characteristics of piezoelectric thick films prepared by screen printing were investigated. The piezoelectric thick films were fabricated using Pb(Al,Nb)O$_3$-Pb(Zr,Ti)O$_3$ system on Si-substrate. The fabricated thick films were burned out at 400$^{\circ}C$ and sintered at 850∼1000$^{\circ}C$ using rapid thermal annealing(RTA) precess. The thickness of piezoelectric thick films were 10$\mu\textrm{m}$. PAN-PZT thick film on Ag-Pd/SiO$_2$/Si prepared at 900$^{\circ}C$/1300sec had remanent polarization of 19.70 ${\mu}$C/$\textrm{cm}^2$.

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Ni/Cu 전극을 적용한 고효율 실리콘 태양전지의 제작 및 특성 평가 (Ni/Cu Metallization for High Efficiency Silicon Solar Cells)

  • 이은주;이수홍
    • 한국전기전자재료학회논문지
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    • 제17권12호
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    • pp.1352-1355
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    • 2004
  • We have applied front contact metallization of plated nickel and copper for high efficiency passivated emitter rear contact(PERC) solar cell. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. The plating technique is a preferred method for commercial solar cell fabrication because it is a room temperature process with high growth rates and good morphology. In this system, the electroless plated Ni is utilized as the contact to silicon and the plated Cu serves as the primary conductor layer instead of traditional solution that are based on Ti/Pd/Ag contact system. Experimental results are shown for over 20 % PERC cells with the Plated Ni/Cu contact system for good performance at low cost.

Ni/Cu 전극을 적용한 고효율 실리콘 태양전지의 제작 및 특성 평가 (Ni/Cu metallization for low cost high efficiency PERC cells)

  • 이은주;이수홍
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.1019-1022
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    • 2004
  • 본 연구에서는 PERC(passivated emitter and rear cell) 구조를 갖는 고효율 단결정 실리콘 태양전지에 도금법을 적용하여 Ni/Cu 전극을 형성하였다. 고효율 태양전지는 제작 비용이 높고 공정이 복잡하기 때문에 실용화에 적용이 어려운 단점이 있다. 따라서 태양전지의 효율은 그대로 유지하고, 공정을 간단하게 줄이면서 저가격화 할 수 있는 방법에 대한 연구가 필요하다. 기존의 고효율 실리콘 태양전지에 가장 일반적으로 적용되고 있는 Ti/Pd/Ag 전극의 경우 고가의 증착 장비를 이용할 뿐만 아니라 재료 자체도 매우 고가의 물질이 사용되고 있다. 도금법으로 Ni/cu 전극을 형성하여 태양전지를 제작한 결과 공정을 간소화하고 비용을 절감 하면서, 20% 이상의 고효율 태양전지를 얻을 수 있었다.

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열원 형태에 의한 전자재료의 접합성에 관한 연구 I (A Study on Bondability of Electronic Materials by Different Heat Sources)

  • 신영의;양협;김경섭
    • Journal of Welding and Joining
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    • 제12권4호
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    • pp.110-116
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    • 1994
  • This paper has been researched bondability of electronics devices, such as lead frame and the thick film of Ag/Pd on an alumina substrate by different heat sources. To obtain the bonds with high quality, it is very important to consist of different materials. Therefore, this paper clarifies not only heat mechanism of micro parallel gap resistance bonding method and pulse heat tip bonding method but also investigates selection of heat sources with micro-electronic materials for bonding. Finally, it is realized fluxless bonding process with filler metal such as plating layers.

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