• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.79-80
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• 2007

To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C\;and\;420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.9501 eV - ($8.79{\times}10^{-4}$ eV/K)$T^2$/(T + 250 K). After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Ag},\;V_{Se},\;Ag_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.

• 센서학회지
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• 제30권4호
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• pp.267-272
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• 2021

In this study, Ag was deposited to investigate its applicability as a surface-enhanced Raman scattering substrate after forming a grass-type black silicon structure through maskless reactive ion etching. Grass-structured black silicon with heights of 2 - 7 ㎛ was formed at radio-frequency (RF) power of 150 - 170 W. The process pressure was 250 mTorr, the O₂/SF₆ gas ratio was 15/37.5, and the processing time was 10 - 20 min. When the processing time was increased by more than 20 min, the self-masking of Si_xO_yF_z did not occur, and the black silicon structure was therefore not formed. Raman response characteristics were measured based on the Ag thickness deposited on a black silicon substrate. As the Ag thickness increased, the characteristic peak intensity increased. When the Ag thickness deposited on the black silicon substrate increased from 40 to 80 nm, the Raman response intensity at a Raman wavelength of 1507 / cm increased from 8.2 × 10³ to 25 × 10³ cps. When the Ag thickness was 150 nm, the increase declined to 30 × 10³ cps and showed a saturation tendency. When the RF power increased from 150 to 170 W, the response intensity at a 1507/cm Raman wavelength slightly increased from 30 × 10³ to 33 × 10³ cps. However, when the RF power was 200 W, the Raman response intensity decreased significantly to 6.2 × 10³ cps.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2012년도 추계학술대회 논문집
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• pp.867-868
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• 2012

• 한국전기전자재료학회논문지
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• 제29권11호
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• pp.707-711
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• 2016

ITO/Ag/ITO conductive films on PET (polyethylene terephthalate) was etched by a Q-switched diode-pumped neodymiun-doped yttrium vanadate (Nd:YVO4, ${\lambda}=1064nm$) laser. During the laser direct etching, the laser beam was incident on the two different directions of PET and the etching patterns were investigated and analyzed. At a lower repetition rate of laser pulse, the larger laser etched patterns were obtained by laser beam incident on reverse side of PET substrate. On the contrary, at a higher repetition rate, it was possible to find the larger etched patterns in case of the laser beam incidence on forward side of PET substrate. For the laser beam incidence on reverse side, the laser beam is expected to be transferred and scattered through the PET substrate and the laser beam energy is thought to be dependent on the etch laser pulse beam energy.

• 한국주조공학회지
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• 제17권3호
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• pp.245-251
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• 1997

Solderability, interfacial reaction and mechanical properties of joint between Sn-Bi-Ag base solder and Cu-substrate were studied. Solders were subjected to aging treatments to see the change of mechanical properties for up to 30 days at $100^{\circ}C$, and then also examined the changes of microstructure and morphology of interfacial compound. Sn-Bi-Ag base solder showed about double tensile strength comparing to Pb-Sn eutectic solder. Addition of 0.7wt%Al in the Sn-Bi-Ag alloy increase spread area on Cu substrate under R-flux and helps to reduce the growth of intermetallic compound during heat-treatment. According to the aging experiments of Cu/solder joint, interfacial intermetallic compound layer was exhibited a parabolic growth to aging time. The result of EDS, it is supposed that the soldered interfacial zone was composed of $Cu_6Sn_5$.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2001년도 추계 기술심포지움
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• pp.75-87
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• 2001

Three different kinds of substrate used in this study : bare Cu substrate, Ni-P/Cu substrate with a Ni-P layer thickness of $5\mu\textrm{m},$ and Au/Ni-P/Cu substrate with the Ni-P and Au layers of $0.15\mu\textrm{m}$ and $5\mu\textrm{m}$ thickness respectively. The wettability of various Sn-base solders was affected by the substrate metal finish used, i.e., nickel, gold and copper. On the Au/Ni-F/Cu substrate, Sn-base solders wet better than any of the other substrate metal finishes tested. The interfacial reaction between various substrate and Sn-base solder was investigated at $70^{\circ}C,$ $100^{\circ}C,$ $120^{\circ}C,$ $150^{\circ}C,$ $170^{\circ}C$ and $200^{\circ}C$ for reaction times ranging from 0 day to 60 day. Intermetallic phases was formed along a Sn-base solder/ various substrate interface during solid-state aging. The apparent activation energy for growth of Sn-Ag/Cu, Sn-Ag-Bi/Cu, and Sn-Bi/Cu couples were 65.4, 88.6, and 127.9 Kj/mol, respectively. After isothermal aging, the fracture surface shoved various characteristics depending on aging temperature and time, and the types of BGA pad.

• 대한금속재료학회지
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• 제50권8호
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• pp.563-568
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• 2012

The wetting property and reflectivity of Sn-3.5Ag solder which was dip coated on a LED lead frame were investigated. The wettability of molten solder on Cu substrate was evaluated by the wetting balance tester, and surface tension was calculated from maximum withdrawal force and withdrawal time. Temperature of the molten solder in a bath was varied in the range of $250-290^{\circ}C$. With increasing temperature, the surface tension decreased a little. The reflectivity of Sn-3.5Ag coated on a substrate became a little lower than the highest current LED lead frame reflectivity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.124-127
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• 2003

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnance. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at $630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is $2.1{\mu}m$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition ($E_x$) observable only in high quality crystal and neutral bound excition ($D^{\circ}$,X) having very strong peak intensity. And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2000년도 추계학술발표강연 및 논문개요집
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• pp.164-164
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• 2000

• 한국전기전자재료학회논문지
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• 제26권5호
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• pp.347-350
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• 2013

By inserting a very thin metal layer of Ag between two outer oxide layers of amorphous silicon indium zinc oxide (SIZO), we fabricated a highly transparent SIZO/Ag/SIZO multilayer on a glass substrate. In order to find the optimized thickness of Ag layers, we investigated the variation of optical properties depending on Ag thickness. It was found that the transition of Ag layer from island formation to a continuous film occurred at a critical thickness. Continuity of the Ag film is very important for optical properties in SIZO/Ag/SIZO multilayer. With about 15 nm thick Ag layer, the multilayer showed a high optical transmittance of 80% at 550 nm and low emissivity in IR.