• 한국결정성장학회지
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• 제2권1호
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• pp.76-85
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• 1992

열전 재료로 사용되는 $Ag_2S$의 단결정을 밀폐된 석영관내에서 고상의 $Ag_2S$가 분해되면서 성장 계면에 $Ag^+$이온과 전자를 공급하고, 휘발성이 강한 황은 vapour 상태로 전송되면서, $Ag_2S$ 계면에서부터 단결정이 성장하는 고상에서의 전기 화학적인 방법을 이용한 vapour 성장법으로 성장시켰다. 고상에서의 $Ag^+$ 이온의 확산이 성장을 지배하는 온도 영역에서는 bulk $Ag_2S$ 단결정을 얻었으며, Ag 분해 온도가 높을수록, Ag분해 온도와 성장 계면의 온도 차이가 클수록 성장속도가 빠름을 확인하였다. 한편 기상으로의 황의 확산이 성장을 지배하는 영역에서는 whisker Ag$_2$S가 성장되었으며 황의 포화 압력이 증가할수록 성장속도는 증가하였다. 또한, 열전재료의 효율을 결정하는 물성치인 전기 전도도를 측정한 결과 고온상에서 다결정의 전기 전도도가 단결정보다 크게 나타나며, 따라서 열전 효율은 다결정이 우수하다고 생각된다.

• 한국식물병리학회지
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• 제1권1호
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• pp.72-78
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• 1985

무 포장에서 분리한 Rhizoctonia solani 5군 4형의 7균주(AG1-IA, AG1-IB, AG2-1, AG2-2, AG3, AG4, AG5)를 사용하여 온도, pH, 질소원, 탄소원이 균의 생장에 미치는 영향을 알아보았다. 이들 균사융합군주별, 최적생장온도는 AG2-1, AG2-2, AG4 등은 $20^{\circ}C$에서 AG1-IA, AG1-IB, AG3, AG5 등은 $25^{\circ}C$에서 생장이 가장 양호하였다. pH가 균사융합군별 생장에 미치는 영향은 공히 pH $6\~7$ 범위였다. R. solani의 각 균주별 탄소원 이용도는 AG 1-IA, AG1-IB, AG2-2, AG3, AG5는 glucose, AG2-1은 sucrose, AG4는 fructose가 좋았으나, glycerine, cellulose, lactose는 모든 균주에서 생장이 불량하였다. 질소원이 균사융합군별 각 균주의 생장에 미치는 영향은 $Ca(NO_3)_2$에서 AG1-IA, AG1-IB, AG4, asparagine에서는 AG2-1, $KNO_3$에서는 AG2-2, $NaNO_3$에서는 AG5의 생장이 양호하였으나, $NH_4NO_3$ 첨가구에서는 공히 불량하였다. 즉, 일반적으로 초산태질소와 유기질소는 암모니아태질소보다 이용율이 높았다. C/N율이 각 군별 균주의 생장에 미치는 영향은 C:N=1:1의 비율에서 생장이 가장 좋았고 탄소원보다는 질소원이 생장에 많은 영향을 미쳤다.

• ETRI Journal
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• 제19권2호
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• pp.71-81
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• 1997

We report on the room-temperature-growth of highly uniform and ultrathin Ag films on Sb-terminated Si(111) surfaces, as evidenced from a scanning tunneling microscopy (STM) study in an UHV system. With predeposition of one monolayer (ML) of Sb, uniform growth of Ag islands was observed at room temperature. The Sb layer suppresses the surface diffusion of Ag atoms on Si surface and increases the Ag island density, and then the increased island density is believed to cause coalescence of Ag islands before the beginning of multilayer growth in higher coverages, resulting in the growth of atomically flat and uniform islands on the Sb surfactant layer.

• 대한의생명과학회지
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• 제24권1호
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• pp.30-34
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• 2018

Silver (Ag) has been widely used in commercial products and medical fields since ancient times because of its antibacterial effect. It is harmless and non-toxic to the human body. For this reason, recent research has actively evaluated antimicrobial activity using silver (Ag). In this study, we investigated the inhibitory effect of a silver-based compound, silver phosphate ($Ag_3PO_4$) on the growth of Staphylococcus aureus and the activation of human immunity. First, the inhibitory effect of $Ag_3PO_4$ on the growth of Staphylococcus aureus was confirmed by a growth curve and a colonyounting method. As a result, the growth inhibitory effect increased as the concentration of $Ag_3PO_4$ increased. Specifically, treatment with $5{\mu}g/mL$ of $Ag_3PO_4$ resulted in no bacteria growth, and the colony-counting method showed a remarkable inhibition. In addition, the expression of cytokine IL-8 by $Ag_3PO_4$ was examined to investigate the cellular immune system activation by $Ag_3PO_4$. After pretreatment of Staphylococcus aureus for 1 hour with $50{\mu}g/mL$ $Ag_3PO_4$, an increased IL-8 mRNA expression resulted. In cells treated with $Ag_3PO_4$, we found that the expression of IL-8 was enhanced in a time-dependent fashion compared to non-treated cells. These results indicate that $Ag_3PO_4$ induces antimicrobial activity against Staphylococcus aureus and activates human immunity. These results are expected to contribute to the future study of the mechanism of silver (Ag) and silver-based compounds in relation to antibacterial activity.

• 한국재료학회지
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• 제16권4호
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• pp.257-263
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• 2006

We have investigated the effect of silver added to Cu films on the microstructure evolution, resistivity, surface morphology, stress relaxation temperature, and adhesion properties of Cu(Ag) alloy thin films deposited on Mo glue layer upon annealing. In addition, pure Cu films deposited on Mo has been annealed and compared. The results show that the silver in Cu(Ag) thin films control the grain growth through the coarsening of its precipitates upon annealing at $300^{\circ}C{\sim}600^{\circ}C$ and the grain growth of Cu reveals the activation energy of 0.22 eV, approximately one third of activation energy for diffusion of Ag dopant along the grain boundaries in Cu matrix (0.75 eV). This indicates that the grain growth can be controlled by Ag diffusion along the grain boundaries. In addition, the grain growth can be a major contributor to the decreased resistivity of Cu(Ag) alloy thin films at the temperature of $300^{\circ}C{\sim}500^{\circ}C$, and decreases the resistivity of Cu(Ag) thin films to $1.96{\mu}{\Omega}-cm$ after annealing at $600^{\circ}C$. Furthermore, the addition of Ag increases the stress relaxation temperature of Cu(Ag) thin films, and thus leading to the enhanced resistance to the void formation, which starts at $300^{\circ}C$ in the pure Cu thin films. Moreover, Cu(Ag) thin films shows the increased adhesion properties, possibly resulting from the Ag segregating to the interface. Consequently, the Cu(Ag) thin films can be used as a metallization of advanced TFT-LCDs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.204.2-204.2
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• 2014

Among various metal oxides, ZrO2 is of particular interests and has received widespread attention thanks to its ideal mechanical and chemical stability. As a cheap metal, Ag nanoparticles are also widely used as catalysts in ethylene epoxidation and methanol oxidation. However, the nature of Ag-ZrO2 interfaces is still unknown. In this work, the growth, interfacial interaction and thermal stability of Ag nanoparticles on ZrO2(111) film surfaces were studied by low-energy electron diffraction (LEED), synchrotron radiation photoemission spectroscopy (SRPES), and X-ray photoelectron spectroscopy (XPS). The ZrO2(111) films were epitaxially grown on Pt(111). Three-dimensional (3D) growth model of Ag on the ZrO2(111) surface at 300 K was observed with a density of ${\sim}2.0{\times}1012particles/cm2$. The binding energy of Ag 3d shifts to low BE from very low to high Ag coverages by 0.5 eV. The Auger parameters shows the primary contribution to the Ag core level BE shift is final state effect, indicating a very weak interaction between Ag clusters and ZrO2(111) film. Thermal stability experiments demonstrate that Ag particles underwent serious sintering before they desorb from the zirconia film surface. In addition, large Ag particles have stronger ability of inhibiting sintering.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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• pp.133-137
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• 2003

The effect of Bi additions to the eutectic Sn-3.5Ag solder alloy on the growth kinetics of the intermetallic compound (IMC) layers during solid-state aging of Sn-Ag-Bi/Cu solder joints has been Investigated. The Bi additions enhanced the growth rate of the total IMC layer comprising of $Cu_6Sn_5$ and $Cu_3Sn$ sublayers. This enhanced IMC growth rate was primarily due to the rapid increase In the growth rate of $Cu_6Sn_5$ sublayer. The growth rate of $Cu_3Sn$ sublayers was little influenced and appeared to be retarded by the Bi additions. The observed growth behavior of $Cu_6Sn_5$ and $Cu_3Sn$ sublayers could be understood if the interfacial reaction barrier at the $Cu_6Sn_5/solder$ interface were reduced by the segregation of Bi at the interface.

• 한국결정성장학회지
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• 제4권1호
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• pp.63-70
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• 1994

초이온도전체 ${\beta}-Ag_3SI$ 단결정을 AgI와 $AG_2S$의 혼합물을 반응시켜서 열처리하여 얻었다. 성장시킨 단결정은 직경 $200{mu}m$ 정도의 구상으로 성형시켰다. 실온에서 X-선 단결정 해석법을 이용하여 정밀한 결정구조 해석을 행했다. 이들 결정구조의 해석결과 ${\beta}-Ag_3SI$의 $Ag^+$는 6-배위의 3c자리보다 4-배위의 12h자리에 점유함이 밝혀졌다. $Ag^+$의 확률밀도분포(probabilty density function)로 부터 [110]방향에서 $Ag^+$의 one-particle potential(o.p.p.)을 계산하였다.${beta}-Ag_3SI$ 구조의(001)면에서 $Ag^+$가 확산에 필요한 활성화에너지는 0.012eV라는 것이 o.p.p.곡선에 의해 계산되었다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 13th KACG Technical Meeting `97 Industrial Crystallization Symposium(ICS)-Doosan Resort, Chunchon, October 30-31, 1997
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• pp.99-103
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• 1997

활성탄의 특성을 이용하여 상업적으로 문제시되고 있는 수질 및 공기 정화용 항균성 Ag-활성탄을 제조하여 흡착특성, 표면구조 및 박테리아 저항성에 대하여 조사하였다. 높은 비표면적을 가진 활성탄에 대하여 AgNO$_3$를 사용하여 Ag-활성탄을 제조하였다. 0.1에서 1.0까지의 AgNO$_3$ 몰농도에 침적된 Ag-활성탄의 비표면적 값은 874-1475 $m^2$/g의 범위에 분포하고 있었으며, AgNO$_3$몰농도가 증가함에 따라 비표면적이 작아지는 경향을 나타내어 흡착된 Ag가 원료 활성탄의 표면구조에 영향을 주었다. Ag는 활성탄 표면의 기공 주위에 고르게 분포되었으며 활성탄의 표면에 물리적 흡착에 의해 존재하는 것으로 나타났다. 항균실험을 위하여 박테리아로서 대장균의 일종인 Escherichia coli를 사용하였으며, 흡착된 Ag의 양이 증가됨에 따라 활성의 범위가 증가되었고, Ag가 흡착되지 않은 활성탄의 경우에 있어서는 활성을 전혀 나타내지 않았다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1026-1029
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• 2001

Zinc films have been deposited onto various buffer layers, Al, Al-Cu, Ag and Ag-Al, by vacuum evaporation method in order to investigate the film microstructure and its consequence on the film growth. Zn films were grown onto Al buffer layers with faster rates than on Ag buffer layers, because of the presence of preferred growth orientation. Especially, in the Zn film formation on the Ag layers, intermetallic compounds AgZn was formed to cause the different growth orientation from Zn film obtained on the Al layers.