• 제목/요약/키워드: Ag electrode

검색결과 649건 처리시간 0.034초

임피던스 변환 회로를 이용한 건식능동뇌파전극 개발 (Development of an Active Dry EEG Electrode Using an Impedance-Converting Circuit)

  • 고덕원;이관택;김성민;이찬희;정영진;임창환;정기영
    • Annals of Clinical Neurophysiology
    • /
    • 제13권2호
    • /
    • pp.80-86
    • /
    • 2011
  • Background: A dry-type electrode is an alternative to the conventional wet-type electrode, because it can be applied without any skin preparation, such as a conductive electrolyte. However, because a dry-type electrode without electrolyte has high electrode-to-skin impedance, an impedance-converting amplifier is typically used to minimize the distortion of the bioelectric signal. In this study, we developed an active dry electroencephalography (EEG) electrode using an impedance converter, and compared its performance with a conventional Ag/AgCl EEG electrode. Methods: We developed an active dry electrode with an impedance converter using a chopper-stabilized operational amplifier. Two electrodes, a conventional Ag/AgCl electrode and our active electrode, were used to acquire EEG signals simultaneously, and the performance was tested in terms of (1) the electrode impedance, (2) raw data quality, and (3) the robustness of any artifacts. Results: The contact impedance of the developed electrode was lower than that of the Ag/AgCl electrode ($0.3{\pm}0.1$ vs. $2.7{\pm}0.7\;k{\Omega}$, respectively). The EEG signal and power spectrum were similar for both electrodes. Additionally, our electrode had a lower 60-Hz component than the Ag/AgCl electrode (16.64 vs. 24.33 dB, respectively). The change in potential of the developed electrode with a physical stimulus was lower than for the Ag/AgCl electrode ($58.7{\pm}30.6$ vs. $81.0{\pm}19.1\;{\mu}V$, respectively), and the difference was close to statistical significance (P=0.07). Conclusions: Our electrode can be used to replace Ag/AgCl electrodes, when EEG recording is emergently required, such as in emergency rooms or in intensive care units.

Effects of the Ag Layer Embedded in NIZO Layers as Transparent Conducting Electrodes for Liquid Crystal Displays

  • Oh, Byeong-Yun;Heo, Gi-Seok
    • Transactions on Electrical and Electronic Materials
    • /
    • 제17권1호
    • /
    • pp.33-36
    • /
    • 2016
  • In the present work, a Ni-doped indium zinc oxide (NIZO) film and its multilayers with Ag layers were investigated as transparent conducting electrodes for liquid crystal display (LCD) applications, as a substitute for indium tin oxide (ITO) electrodes. By interposing the Ag layer between the NIZO layers, the loss of the optical transmittance occurred; however, the Ag layer brought enhancement of electrical sheet resistance to the NIZO/Ag/NIZO multilayer electrode. The twisted nematic cell based on the NIZO/Ag/NIZO multilayer electrode exhibited superior electro-optical characteristics than those based on single NIZO electrode and was competitive compared to those based on the conventional ITO electrode. An LCD-based NIZO/Ag/NIZO multilayer electrode may allow new approaches to conventional ITO electrodes in display technology.

Characteristics of IZO/Ag/IZO Multilayer Electrode Grown by Roll-to-roll Sputtering for Touch Screen Panel

  • Cho, Chung-Ki;Bae, Jin-Ho;Kim, Han-Ki
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
    • /
    • pp.125-125
    • /
    • 2011
  • In this study, we investigated the electrical, optical, structural, and surface properties of indium zinc oxide (IZO)/Ag/IZO multilayer electrode grown by specially designed roll-to-roll sputtering system using the flexible substrate. By the continuous roll-to-roll sputtering of the bottom IZO, Ag, and top IZO layers at room temperature, they were able to fabricate a high quality IZO/Ag/IZO multilayer electrode. At optimized conditions, the bottom IZO layer (40 nm) was deposited on a flexible substrate. After deposition of the Bottom IZO layer, Ag layer was deposited onto the bottom IZO film as a function of DC power (200~500 W). Subsequently, the top IZO layer was deposited onto the Ag layer at identical deposition conditions to the bottom IZO layer (40 nm). We investigated the characteristics of IZO/Ag/IZO multilayer electrode as a function of Ag thickness. It was found that the electrical and optical properties of IZO/Ag/IZO multilayer electrode was mainly affected thickness of the Ag layer at optimized condition. In case of IZO/Ag/IZO multilayer electrode with the Ag power (350W), it exhibited a low sheet resistance of 7.1 ohm/square and a high transparency of 86.4%. Furthermore, we fabricated the touch screen panel using the IZO/Ag/IZO multilayer electrode, which demonstrate the possibility of the IZO/Ag/IZO multilayer electrode grown by roll-to-roll sputtering system as a transparent conducting layer in the touch screen panel.

  • PDF

저surge 진공 차단기용 Se 전극 제조 (Se Electrode for Low Surge Vacuum Circuit Breaker)

  • 김봉서;우병철;변우봉;이희웅
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 1996년도 하계학술대회 논문집 C
    • /
    • pp.1651-1653
    • /
    • 1996
  • As electrode materials like as Cu-Pb, Cu-Bi, WC-Ag, W-Ag for vacuum circuit breaker have high chopping current or bad insulation-recovery characteristics, it can affect induction machinery like as transformer and motor. To produce low surge electrode material, it have been suggested Co-Ag-Se electrode which were infiltrated with Ag-Se intermetallic compound into sintered Co matrix. In this study, we would like to represent that production method and microstructure of Co-Ag-Se electrode material. The microstructure and characteristics of Ag-Se intermetallic compound and Co-(Ag-Se) electrode were investigated by using SEM, XRD, EPMA.

  • PDF

저surge 진공 차단기용 Te 전극 제조 (Production of Te Electrode for Low Surge Vacuum Circuit Breaker)

  • 김봉서;우병철;변우봉;이희웅
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 1996년도 춘계학술대회 논문집
    • /
    • pp.123-128
    • /
    • 1996
  • As electrode materials like as Cu-Pb, Cu-Bi, WC-Ag, W-Ag for vacuum circuit breaker have high chopping current or bad insulation-recovery characteristics, it can affect induction machinery like as transformer and motor. To produce low surge electrode material, it have been suggested Co-Ag-Te electrode which were infiltrated with Ag-Te intermetallic compound into sintered Co matrix in vacuum. In this paper, we would like to represent that production method and microstructure of Co-Ag-Te electrode material in each condition. The microstructure and characteristics of Ag-Te intermetallic compound and Co-(Ag-Te) electrode were investigated by using optical microscope, SEM, XRD, EPMA.

  • PDF

AgNWs/Ga-doped ZnO 복합전극 적용 CdSe양자점 기반 투명발광소자 (CdSe Quantum Dot based Transparent Light-emitting Device using Silver Nanowire/Ga-doped ZnO Composite Electrode)

  • 박재홍;김효준;강현우;김종수;정용석
    • 반도체디스플레이기술학회지
    • /
    • 제19권4호
    • /
    • pp.6-10
    • /
    • 2020
  • The silver nanowires (AgNWs) were synthesized by the conventional polyol process, which revealed 25 ㎛ and 30 nm of average length and diameter, respectively. The synthesized AgNWs were applied to the CdSe/CdZnS quantum dot (QD) based transparent light-emitting device (LED). The device using a randomly networked AgNWs electrode had some problems such as the high threshold voltage (for operating the device) due to the random pores from the networked AgNWs. As a method of improvement, a composite electrode was formed by overlaying the ZnO:Ga on the AgNWs network. The device used the composite electrode revealed a low threshold voltage (4.4 Vth) and high current density compared to the AgNWs only electrode device. The brightness and current density of the device using composite electrode were 55.57 cd/㎡ and 41.54 mA/㎠ at the operating voltage of 12.8 V, respectively, while the brightness and current density of the device using (single) AgNWs only were 1.71 cd/㎡ and 2.05 mA/㎠ at the same operating voltage. The transmittance of the device revealed 65 % in a range of visible light. Besides the reliability of the devices was confirmed that the device using the composite electrode revealed 2 times longer lifetime than that of the AgNWs only electrode device.

산화물을 첨가한 Ag-Pd 전극의 제조 (Synthesis of Ag-Pd Electrode having Oxide Additive)

  • 이재석;이동윤;송재성;김명호
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
    • /
    • pp.735-738
    • /
    • 2003
  • Downsizing electronics requires precision position control with an accuracy of sub-micron order, which demands development of ultra-fine displacive devices. Piezoelectric transducer is one of devices transferring electric field energy into mechanical energy and being capable for fine displacement control. The transducer has been widely used as fine Position control device Multilayer piezoelectric actuator, one of typical piezo-transducer, is fabricated by stacking alternatively ceramic and electrode layers several hundred times followed by cofiring process. Electrode material should be tolerable in the firing process maintaining at ceramic-sintering temperatures up to $1100{\sim}1300^{\circ}C$. Ag-Pd can be used as stable electrode material in heat treatment above $960^{\circ}C$. Besides, adding small quantity ceramic powder allow the actuator to be fabricated in a good shape by diminishing shrinkage difference between ceramic and electrode layers, resulting in avoidance of crack and delamination at and/or nearby interface between ceramic an electrode layers. This study presents synthesis of nano-oxide-added Ag/Pd powders and its feasibility to candidate material tolerable at high temperature. The powders were formed in a co-precipitation process of Ag and Pd in nano-oxide-dispersed solution where Ag and Pd precursors are melted in $HNO_3$ acid.

  • PDF

Influence of the Thin-Film Ag Electrode Deposition Thickness on the Current Characteristics of a CVD Diamond Radiation Detector

  • Ban, Chae-Min;Lee, Chul-Yong;Jun, Byung-Hyuk
    • Journal of Radiation Protection and Research
    • /
    • 제43권4호
    • /
    • pp.131-136
    • /
    • 2018
  • Background: We investigated the current characteristics of a thin-film Ag electrode on a chemical vapor deposition (CVD) diamond. The CVD diamond is widely recognized as a radiation detection material because of its high tolerance against high radiation, stable response to various dose rates, and good sensitivity. Additionally, thin-film Ag has been widely used as an electrode with high electrical conductivity. Materials and Methods: Considering these properties, the thin-film Ag electrode was deposited onto CVD diamonds with varied deposition thicknesses (${\fallingdotseq}50/98/152/257nm$); subsequently, the surface thickness, surface roughness, leakage current, and photo-current were characterized. Results and Discussion: The leakage current was found to be very low, and the photo-current output signal was observed as stable for a deposited film thickness of 98 nm; at this thickness, a uniform and constant surface roughness of the deposited thin-film Ag electrode were obtained. Conclusion: We found that a CVD diamond radiation detector with a thin-film Ag electrode deposition thickness close to 100 nm exhibited minimal leakage current and yielded a highly stable output signal.

Sintering Behavior of Ag-Ni Electrode Powder with Core-shell Structure

  • Kim, Kyung Ho;Koo, Jun-Mo;Ryu, Sung-Soo;Yoon, Sang Hun;Han, Yoon Soo
    • 한국표면공학회지
    • /
    • 제49권6호
    • /
    • pp.507-512
    • /
    • 2016
  • Expensive silver powder is used to form electrodes in most IT equipment, and recently, many attempts have been made to lower manufacturing costs by developing powders with Ag-Ni or Ag-Cu core-shell structures. This study examined the sintering behavior of Ag-Ni electrode powder with a core-shell structure for silicon solar cell with high energy efficiency. The electrode powder was found to have a surface similar to pure Ag powder, and cross-sectional analysis revealed that Ag was uniformly coated on Ni powder. Each electrode was formed by sintering in the range of $500^{\circ}C$ to $800^{\circ}C$, and the specimen sintered at $600^{\circ}C$ had the lowest sheet resistance of $5.5m{\Omega}/{\Box}$, which is about two times greater than that of pure Ag. The microstructures of electrodes formed at varying sintering temperatures were examined to determine why sheet resistance showed a minimum value at $600^{\circ}C$. The electrode formed at $600^{\circ}C$ had the best Ag connectivity, and thus provided a better path for the flow of electrons.

Formation of Black Matrix and Ag Electrode Patterns by Photolithographic Process for High Resolution PDP

  • So, Jae-Yong;Kwon, Hyeok-Yong;Kim, Suk-Kyung;Park, Lee-Soon
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
    • /
    • pp.369-372
    • /
    • 2008
  • Black matrix and Ag electrode with uniform line pitches were successfully fabricated through the photolithographic process by using the photosensitive black pastes and Ag pastes with optimized photosensitive properties for high resolution PDPs. The photosensitivity of the black and Ag pastes in the photolithographic process was investigated with the variation of photosensitive BM and Ag pastes and the photolithography process conditions. The important components and formulation of the photosensitive BM and Ag paste we discussed.

  • PDF