• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05a
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• pp.6-10
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• 2001

We synthesized polypyrrole (PPy) nanotubules by oxidative polymerization of the pyrrole monomer on the pore of a polycarbonate membrane. The electrochemical behavior was investigated using cyclic voltammetry and AC impedance. The redox potential was about -0.5 V vs. Ag/AgCl reference electrode, while the potential was about 0 V for electro-synthesized PPy film. It is considered as the backbone grows according to the pore wall. Therefore, it is possible to be arranged regularly. That leads to improvement in the electron hopping. The AC impedance plot gave a hint of betterment of mass transport. PPy nanotubules have improved in mass transport, or diffusion. That is because the diffusion occurs through a thin pore wall of PPy nanotubules. The kinetic parameter of PPy nanotubules enzyme electrode with glucose solution was evaluated. The formal Michaelis constant and maximum current calculated by computer were about 23.8 mmol $dm^{-3}$ and $440\;{\mu}A$ respectively. Obviously, an affinity for the substrate and current response of the PPy nanotubules enzyme electrode are rather good, comparing with that of PPy film. What is more, the enzyme electrode is sensitive to blood sugar of a diabetic serum despite an obstruction of ascorbic acid, oxygen, some protein and/or hormone.

• Journal of the Korean Magnetics Society
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• v.13 no.3
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• pp.109-114
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• 2003

The purpose of this study Is to investigate the effect of $V_2$O$_{5}$ addition on the microstructures and magnetic properties of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt％ $V_2O_{5}$-doped NiCuZn ferrite pastes. With increasing the $V_2O_{5}$ content, the exaggerated grain growth of ferrite layers was developed due to the promotion of Ag diffusion and Cu segregation into the grain boundaries oi ferrites, which affected significantly the magnetic properties of the chip inductors. After sintering at $900^{\circ}C$, the inductance at 10 MHZ of the 0.5 wt％ $V_2O_{5}$-doped chip inductor was 3.7 ${\mu}$H less than 4.2 ${\mu}$H of the 0.3 wt% $V_2O_{5}$-doped one, which was thought to be caused by the residual stress at the ferrite layers increased with the promotion of Ag diffusion and Cu segregation. The quality factor of the 0.5 wt% $V_2O_{5}$-doped chip inductor decreased with increasing the sintering temperature, which was considered to be caused by the electrical resistivity of the ferrite layer decreased with the promotion of Ag/cu segregation at the grain boundaries and the growth of the mean grain size of ferrite due to exaggerated grain growth of ferrite layers.

• Journal of the Korean Society of Industry Convergence
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• v.7 no.4
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• pp.349-354
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• 2004

The growth mode of the Si layers which were grown on Si(111) by using Ag as surfactant were investigated by intensity oscillations of the RHEED specular spot at the different temperatures. we found that the introduction of Ag as the surfactant alters the growth mode from a three-dimensional clustering mechanism to a two-dimensional layer-by-layer growth. In the growth of Si layers on Si(111) with a surfactant Ag, At $450^{\circ}C$, RHEED intensity oscillation was very stable and periodic from early stage of deposition to 32 ML. RHEED patterns during homoepitaxial growth at $450^{\circ}C$ was changed from $7{\times}7$ structure into ${\sqrt{3}}{\times}{\sqrt{3}}$ structures. Since the ${\sqrt{3}}{\times}{\sqrt{3}}$ structure include no stacking fault, the stacking fault layer seems to be reconstructed into normal stacking one at transition from the $7{\times}7$ structure to a ${\sqrt{3}}{\times}{\sqrt{3}}$ one. We also found that the number of the intensity oscillation of the specular spot for Si growth with a surfactant Ag was more than for Si growth without a surfactant. This result may be explained that the activation energy decrease for the surface diffusion of Si atoms due to segregation of the surfactant toward the growing surface.

• Journal of the Korean institute of surface engineering
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• v.46 no.6
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• pp.235-241
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• 2013

In this study, the effects of alloying elements and thermal aging on the contact resistance of electroplated gold alloy layers were investigated by surface analysis using X-ray photoelectron spectroscopy (XPS). The contact resistance of Au-Ag alloy was lower than that of Au-Ni or Au-Co alloy after thermal aging. The XPS results show that nickel and oxygen present as nickel oxides such as NiO and $Ni_2O_3$ on the surface of gold layers after thermal aging. The increase in the contact resistance after thermal aging is attributable to the nickel oxide layer formed on the surface of the gold layers. The content of nickel diffused from the underlayer during the thermal aging was high in the order of Au-Co, Au-Ni and Au-Ag alloy because the area of grain boundary was large in the order of Au-Ag, Au-Ni and Au-Co alloy.

• Journal of Microbiology and Biotechnology
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• v.29 no.11
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• pp.1841-1851
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• 2019

Garcinol, a well-known medicinal phytochemical, was extracted and isolated from the dried fruit rinds of Garcinia quaesita Pierre. In this study, garcinol has successfully used to reduce silver ions to silver in order to synthesize garcinol-capped silver nanoparticles (G-AgNPs). The formation and the structure of G-AgNPs were confirmed by UV-visible spectroscopy, transmission electron microscopy and Fourier transform infrared spectroscopy. The antimicrobial activity of garcinol and G-AgNPs were investigated by well diffusion assays, broth micro-dilution assays and time-kill kinetics studies against five microbial species, including Staphylococcus aureus (ATCC 25923), Pseudomonas aeruginosa (ATCC 27853), Escherichia coli (ATCC 25922), Candida albicans (ATCC 10231) and clinically isolated methicillin-resistant Staphylococcus aureus (MRSA). The formation of G-AgNPs is a promising novel approach to enhancing the biological activeness of silver nanoparticles, and to increase the water solubility of garcinol which creates a broad range of therapeutic applications.

• Journal of Welding and Joining
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• v.18 no.3
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• pp.89-96
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• 2000

As solder becomes small and fine, the reliability and solderability of solder joint are the critical issue in present electronic packaging industry. Besides the use of lead(Pb) containing solders for the interconnections of microelectronic subsystem assembly and packaging has enviromental problem. In this study, using Sn/Pb and Sn/Ag eutectic solder paste, in order to obtain decrease of solder joint strength with increasing aging time, initial solder joint strength and aging strength after 1000 hour aging at $100^{\circ}C$ were measured by peel test. And in order to obtain the growth of intermetallic compound(IMC) layer thickness, IMC layer thickness was measured by scanning electron microscope(SEM). As a result, solder joint strength was decreased with increasing aging time. The mean IMC layer thickness was increased linearly with the square root of aging time. The diffusion coefficient(D) of IMC layer was found to $1.29{\times}10^{-13}{\;}cm^2/s$ at using Sn/Pb solder paste, 7.56{\times}10^{-14}{\textrm}{cm}^2/s$ at using Sn/Ag solder paste.

• Journal of the Korean Chemical Society
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• v.35 no.4
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• pp.374-378
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• 1991

The electrochemical reduction behavior of Bilirubin (BR) in phosphate buffer (pH 7.8) solution was studied by DC polarography, differential pulse polarography, cyclic voltammetry and controlled potential coulometry. In DC polarogram, two reduction waves of BR were found. The half wave potentials of two reduction waves were -1.32 and -1.51 volts vs. Ag/AaCl respectively. The current type of 1st reduction wave was diffusion-controlled and the 2$^{nd}$ reduction wave was diffusion current containing a little kinetic current. The electrochemical reduction process of BR at each reduction step was all irreversible. The prewave appeared at lower concentration than 3.4 ${\times}$ 10$^{-4}$M, this prewave was identified as adsorption prewave. And the number of electron transfered in reduction steps, n$_{app}$ was two for the 1st reduction step and one for the 2$^{nd}$ reduction step.

• Korean Journal of Metals and Materials
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• v.50 no.10
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• pp.775-783
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• 2012

The effect of thermal annealing on the in-situ growth characteristics of intermetallics (IMCs) and the mechanical strength of Cu pillar/Sn-3.5Ag microbumps are systematically investigated. The $Cu_6Sn_5$ phase formed at the Cu/solder interface right after bonding and grew with increased annealing time, while the $Cu_3Sn$ phase formed at the $Cu/Cu_6Sn_5$ interface and grew with increased annealing time. IMC growth followed a linear relationship with the square root of the annealing time due to a diffusion-controlled mechanism. The shear strength measured by the die shear test monotonically increased with annealing time. It then changed the slope with further annealing, which correlated with the change in fracture modes from ductile to brittle at a critical transition time. This is ascribed not only to the increasing thickness of brittle IMCs but also to the decreasing thickness of the solder, as there exists a critical annealing time for a fracture mode transition in our thin solder-capped Cu pillar microbump structures.

• Membrane and Water Treatment
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• v.2 no.1
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• pp.25-37
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• 2011

PES UF membranes containing silver were prepared to impart antibacterial properties for waste water treatment. Asymmetric membranes for antibacterial application were prepared from polyethersulfone (PES) and silver nitrate ($AgNO_3$) (PES/$AgNO_3$=15/2 by weight) solution in N-Methyl-2-pyrrolidone (NMP) via simple wet phase inversion technique. These membranes were characterized by polyvinylpyrrolidone (PVP) and polyethylene glycol (PEG) of different molecular weights (1000 ppm in water) at room temperature and on operating pressure of 5 bars. It was observed that the water flux of PES-$AgNO_3$ membrane is slightly lower than virgin PES but still increased linearly with the increment of pressure applied. The morphology of the resulting membranes was examined using Field-Emission Scanning Electron Microscope (FESEM) coupled with Energy Dispersive Spectroscopy (EDS). Elemental analysis using EDS proved that silver is successfully loaded on the membrane surfaces. Due to the success of loading silver on membrane surfaces, antibacterial activities were evaluated via agar diffusion method against Escherichia coli (E.coli) and Staphylococcus aureus (S.aureus) culture. By incorporating 2 wt% of silver nitrate, PES-$AgNO_3$ showed significant inhibition ring on both E.coli and S.aureus. Filtration of E.coli solution (OD 0.31) showed satisfactory rejection data with ~100% inhibition growth after 24 hours incubation at $37^{\circ}C$. Resultant membranes also exhibit better tensile strength (compared to virgin PES) up to 71% may be due to the suggested interactions. The residual silver during fabrication was measured using ICP-MS and result showed that the residual silver content of PES-$AgNO_3$ membrane was only ~1% of the original silver added in the polymer solution. These studies have shown that PES-$AgNO_3$ UF membranes are potential in improving the filtration in water treatment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.852-858
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• 2007

The dependence of substrate on the Ag photodoping phenomenon into amonhous $({\alpha}-)$ GeSe thin film has been investigated using holographic method. A 442 nm HeCd laser was utilized as a light source for the holographic exposure and a 632.8 nm HeNe laser to measure the variation of diffraction efficiency $(\eta)$ in real time. The films (Ag and ${\alpha}-GeSe$) were thermally deposited on the substrates, i.e. p-type Si(100), n-type Si(100) and slide glass. The sample structures prepared were two types: type I (Ag/${\alpha}$-SeGe/substrate) and type II (${\alpha}$-SeGe/Ag/substrate). The $\eta$ kinetics comprised to be three steps in which $\eta$ initially increases, is saturated to be maximized $(\eta_M)$, and then decreases relatively gradually. For the same substrate, the $\eta_M$ values of the type II were higher than those of type I. In addition, the type II exhibited the highest $\eta_M$ for p-type Si substrate, while that in type I was observed for n-type Si substrate. These tendency is explained by the diffusion of minority carrier in the films and the change of magnitude and direction in internal fields generated at the film interfaces. Atomic-force-microscope (AFM) was used to observe relief-type grating patterns.