• Title/Summary/Keyword: Ag diffusion

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Enhancement of light reflectance and thermal stability in Ag-Mg alloy contacts on p-type GaN

  • Song, Yang-Hui;Son, Jun-Ho;Kim, Beom-Jun;Jeong, Gwan-Ho;Lee, Jong-Ram
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.03a
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    • pp.18-20
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    • 2010
  • The mechanism for suppression of Ag agglomeration in Ag-Mg alloy ohmic contact to p-GaN is investigated. The Ag-Mg alloy ohmic contact shows low contact resistivity of $6.3\;{\times}\;10^{-5}\;{\Omega}cm^2$, high reflectance of 85.5% at 460 nm wavelength after annealing at $400^{\circ}C$ and better thermal stability than Ag contact The formation of Ga vacancies increase the net hole concentration, lowering the contact resistivity. Moreover, the oxidation of Mg atoms in Ag film increase the work function of Ag-Mg alloy contact and prevents Ag oxidation. The inhibition of oxygen diffusion by Mg oxide suppresses the Ag agglomeration, leading to enhance light reflectance and thermal stability.

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The characteristics of joints with In-Ag alloy (Indium-silver alloy를 이용한 접합의 특성)

  • Kim, Jae-Wook;Kim, Je-Yoon;Kim, Sang-Sig;Sung, Man-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.256-258
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    • 2003
  • Two Si wafers are bonded with indium-silver alloy using diffusion bonding method. When silver and indium thin films are contacted, they diffuse into each other and form inter-metallic compounds like $AgIn_2$, $Ag_2In$, $Ag_3In$ etc. These compounds are determined by ratio of two metals. From phase diagram of Ag-In alloy, we can get the ratio of $Ag_2In$, that has high melting point about 700$^{\circ}C$, approximately 2:1. This ratio was made by controlling of film thickness. And bonding was executed by annealing and adding pressures at a time. The joint of these wafers had been observed by SEM. And we had also seen the EDS (Energy Dispersive Spectroscopy) data to analysis the component of samples.

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Effect of Surface Modification of the Porous Stainless Steel Support on Hydrogen Perm-selectivity of the Pd-Ag Alloy Hydrogen Separation Membranes (다공성 스테인리스 강 지지체의 표면개질에 따른 팔라듐-은 합금 수소 분리막의 수소 투과 선택도의 변화)

  • Kim, Nak-Cheon;Kim, Se-Hong;Lee, Jin-Beum;Kim, Hyun-Hee;Yang, Ji-Hye;Kim, Dong-Won
    • Journal of the Korean institute of surface engineering
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    • v.49 no.3
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    • pp.286-300
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    • 2016
  • Pd-Ag alloy membranes have attracted a great deal of attention for their use in hydrogen purification and separation due to their high theoretical permeability, infinite selectivity and chemical compatibility with hydro-carbon containing gas streams. For commercial application, Pd-based membranes for hydrogen purification and separation need not only a high perm-selectivity but also a stable long-term durability. However, it has been difficult to fabricate thin, dense Pd-Ag alloy membranes on a porous stainless steel metal support with surface pores free and a stable diffusion barrier for preventing metallic diffusion from the porous stainless steel support. In this study, thin Pd-Ag alloy membranes were prepared by advanced Pd/Ag/Pd/Ag/Pd multi-layer sputter deposition on the modified porous stainless steel support using rough polishing/$ZrO_2$ powder filling and micro-polishing surface treatment, and following Ag up-filling heat treatment. Because the modified Pd-Ag alloy membranes using rough polishing/$ZrO_2$ powder filling method demonstrate high hydrogen permeability as well as diffusion barrier efficiency, it leads to the performance improvement in hydrogen perm-selectivity. Our membranes, therefore, are expected to be applicable to industrial fields for hydrogen purification and separation owing to enhanced functionality, durability and metal support/Pd alloy film integration.

Electrochemical Immunosensor Using a Gas Diffusion Layer as an Immobilization Matrix

  • Kim, Yong-Tae;Oh, Kyu-Ha;Kim, Joo-Ho;Kang, Hee-Gyoo;Choi, Jin-Sub
    • Bulletin of the Korean Chemical Society
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    • v.32 no.6
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    • pp.1975-1979
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    • 2011
  • The modification of a gas diffusion layer (GDL), a vital component in polymer electrolyte fuel cells, is described here for use in the electrochemical detection of antibody-antigen biosensors. Compared to other substrates (gold foil and graphite), mouse anti-rHBsAg monoclonal antibody immobilized on gold-coated GDL (G-GDL) detected analytes of goat anti-mouse IgG antibody-ALP using a relatively low potential (-0.0021 V vs. Ag/AgCl 3 M NaCl), indicating that undesired by-reactions during electrochemical sensing should be avoided with G-GDL. The dependency of the signal against the concentration of analytes was observed, demonstrating the possibility of quantitative electrochemical biosensors based on G-GDL substrates. When a sandwich method was employed, target antigens of rHBsAg with a concentration as low as 500 ng/mL were clearly measured. The detection limit of rHBsAg was significantly improved to 10 ng/mL when higher concentrations of the 4-aminophenylphosphate monosodium salt (APP) acting on substrates were used for generating a redox-active product. Additionally, it was shown that a BSA blocking layer was essential in improving the detection limit in the G-GDL biosensor.

Properties on Electrical Resistance Change of Ag-doped Chalcogenide Thin Films Application for Programmable Metallization Cell (Programmable Metallization Cell 응용을 위한 Ag-doped 칼코게나이드 박막의 전기적 저항 변화 특성)

  • Choi, Hyuk;Koo, Sang-Mo;Cho, Won-Ju;Lee, Young-Hie;Chung, Hong-Bay
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.12
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    • pp.1022-1026
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    • 2007
  • We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30 nm and 50 nm respectively, device have excellent characteristics.

Electrical and Optical Properties on Thickness of Ag and Chalcogenide Thin Films at Programmable Metallization Cell Device (Programmable Metallization Cell(PMC) 소자에서 Ag와 칼코게나이드 박막의 두께에 따른 전기적 광학적 특성)

  • Choi, Hyuk;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.24-24
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    • 2007
  • We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30nm and 50nm respectively, device have excellent characteristics.

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Prediction of the optical properties of $TiO_2$/Ag/$TiO_2$ films using transfer matrix and comparisions with real transmittance measured on the sputter-deposited films (Transfer Matrix를 사용하여 예측한 $TiO_2$/Ag/$TiO_2$ 박막의 광학적 성질 및 스퍼터 증착된 박막과의 특성 비교)

  • Kim, Jin-Il;Kim, Jin-Hyeon;Kim, Yeong-Hwan;O, Tae-Seong
    • Korean Journal of Materials Research
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    • v.5 no.1
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    • pp.140-148
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    • 1995
  • Optical properties of $TiO_{2}$. Ag filrns and $TiO_{2}/Ag/TiO_{2}$ multilayer filrns with different thickness were predicted using the transfer matrix, and these results were compared with real transmittance curves of the sputterdeposited films. With the complex refractive indices, it was possible to predict transmittance characteristics which were close to real data for $TiO_{2}$ and Ag films. Due to the diffusion and agglomeration of Ag during $TiO_{2}$ deposition, optical properties of the sputterdeposited $TiO_{2}/Ag/TiO_{2}$ films were found to be very different from the transmittance curves predicted using the transfer matrix. Using deposition of 4nm-thick or 6nm-thick TI layers as a diffusion barrier, however, the transmittance curves of $TiO_{2}/Ti/Ag/Ti/TiO_{2}$ five-layer films became similar to ones predicted for $TiO_{2}/Ag/TiO_{2}$ threeiayer films.

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Effect of Ag Nanolayer in Low Temperature Cu/Ag-Ag/Cu Bonding (저온 Cu/Ag-Ag/Cu 본딩에서의 Ag 나노막 효과)

  • Kim, Yoonho;Park, Seungmin;Kim, Sarah Eunkyung
    • Journal of the Microelectronics and Packaging Society
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    • v.28 no.2
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    • pp.59-64
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    • 2021
  • System-in-package (SIP) technology using heterogeneous integration is becoming the key of next-generation semiconductor packaging technology, and the development of low temperature Cu bonding is very important for high-performance and fine-pitch SIP interconnects. In this study the low temperature Cu bonding and the anti-oxidation effect of copper using porous Ag nanolayer were investigated. It has been found that Cu diffuses into Ag faster than Ag diffuses into Cu at the temperatures from 100℃ to 200℃, indicating that solid state diffusion bonding of copper is possible at low temperatures. Cu bonding using Ag nanolayer was carried out at 200℃, and the shear strength after bonding was measured to be 23.27 MPa.

Uniform Ag Thin Film Growth on an Sb-terminated Si(111) Surface

  • Park, Kang-Ho;Ha, Jeong-Sook;Lee, El-Hang
    • ETRI Journal
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    • v.19 no.2
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    • pp.71-81
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    • 1997
  • We report on the room-temperature-growth of highly uniform and ultrathin Ag films on Sb-terminated Si(111) surfaces, as evidenced from a scanning tunneling microscopy (STM) study in an UHV system. With predeposition of one monolayer (ML) of Sb, uniform growth of Ag islands was observed at room temperature. The Sb layer suppresses the surface diffusion of Ag atoms on Si surface and increases the Ag island density, and then the increased island density is believed to cause coalescence of Ag islands before the beginning of multilayer growth in higher coverages, resulting in the growth of atomically flat and uniform islands on the Sb surfactant layer.

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Microstructure and electrical properties of high power laser thermal annealing on inkjet printed Ag films

  • Yoon, Yo-Han;Yi, Seol-Min;Yim, Jung-Ryoul;Lee, Ji-Hoon;Joo, Young-Chang
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.36.2-36.2
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    • 2009
  • In this work, the high power CW Nd:YAG laser has been used for thermal treatment of inkjet printed Ag films-involving eliminating organic additives (dispersant, binder, and organic solvent) of Ag ink and annealing Ag nanoparticles. By optimizing laser parameters, such as laser power and defocusing value, the laser energy can totally be converted to heat energy, which is used to thermal treatment of inkjet printed Ag films. This results in controlling the microstructures and the resistivity of films. We investigated the thermal diffusion mechanisms during laser annealing and the resulting microstructures. The impact of high power laser annealing on microstructures and electrical characteristic of inkjet printed Ag films is compared to those of the films annealed by a conventional furnace annealing. Focused ion beam (FIB) channeling image shows that the laser annealed Ag films have large columnar grains and dense structure (void free), while furnace annealed films have tiny grains and exhibit void formation. Due to these microstructural characteristics of laser annealed films, it has better electrical property (low resistivity) compared to furnace annealed samples.

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