• 제목/요약/키워드: Ag contacts

검색결과 44건 처리시간 0.022초

바이어스 궤도계전기 접점의 재질 특성에 관한 연구 (A Study on the Material Characteristics of Contacts on Bias Track Relay)

  • 김희대;이성일
    • 한국철도학회논문집
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    • 제15권6호
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    • pp.597-603
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    • 2012
  • 본 연구에서는 바이어스 궤도계전기의 접점재료를 선정하는데 있어 Ag 접점과 AgC 접점의 문제점을 분석하고, 안전성을 평가하는데 목적이 있다. 접점의 용착실험과 반복개폐 실험을 실시하여 접점의 특성을 알아보았다. 실험 결과, Ag 접점은 비교적 낮은 전류에서 용착이 발생하였고, AgC 접점은 온도특성이 우수하여 대전류에서도 용착이 발생하지 않았다. 반복개폐 실험에서는 AgC 접점의 개폐횟수가 증가할수록 저항이 불안정하고 접점에 전이현상이 발생하여 접점소모가 큰 것으로 나타났다. 연구 결과, AgC 접점은 용착특성에서는 우수하나 반복개폐 실험에서 저항변화가 많아 사용상 주의가 요구되며, Ag 접점은 반복개폐 특성은 우수하나 용착특성에서 취약한 것으로 나타났다.

산화물 첨가에 의한 Ag-SnO$_2$contact by Oxide addition (Property changes of Sintered Ag-SnO$_2$contact by Oxide addition)

  • 한세원;이동윤;조해룡;이희웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1989년도 춘계학술대회 논문집
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    • pp.52-55
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    • 1989
  • The properties of sintered Ag-SnO$_2$contacts which contain the second oxide were investigated with hardeness, workability, electrical conductivity and are erosion. Ag-SnO$_2$contacts containing ZnO or Bi$_2$O$_3$have most excellent workability and arc erosion endurance.

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Strain-induced enhancement of thermal stability of Ag metallization with Ni/Ag multi-layer structure

  • 손준호;송양희;김범준;이종람
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.157-157
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    • 2010
  • Vertical-structure light-emitting diodes (V-LEDs) by laser lift-off (LLO) have been exploited for high-efficiency GaN-based LEDs of solid-state lightings. In V-LEDs, emitted light from active regions is reflected-up from reflective ohmic contacts on p-GaN. Therefore, silver (Ag) is very suitable for reflective contacts due to its high reflectance (>95%) and surface plasmon coupling to visible light emissions. In addition, low contact resistivity has been obtained from Ag-based ohmic contacts annealed in oxygen ambient. However, annealing in oxygen ambient causes Ag to be oxidized and/or agglomerated, leading to degradation in both electrical and optical properties. Therefore, preventing Ag from oxidation and/or agglomeration is a key aspect for high-performance V-LEDs. In this work, we demonstrate the enhanced thermal stability of Ag-based Ohmic contact to p-GaN by reducing the thermal compressive stress. The thermal compressive stress due to the large difference in CTE between GaN ($5.6{\times}10^{-6}/^{\circ}C$) and Ag ($18.9{\times}10^{-6}/^{\circ}C$) accelerate the diffusion of Ag atoms, leading to Ag agglomeration. Therefore, by increasing the additional residual tensile stress in Ag film, the thermal compressive stress could be reduced, resulting in the enhancement of Ag agglomeration resistance. We employ the thin Ni layer in Ag film to form Ni/Ag mutli-layer structure, because the lattice constant of NiO ($4.176\;{\AA}$ is larger than that of Ag ($4.086\;{\AA}$). High-resolution symmetric and asymmetric X-ray diffraction was used to measure the in-plane strain of Ag films. Due to the expansion of lattice constant by oxidation of Ni into NiO layer, Ag layer in Ni/Ag multi-layer structure was tensilely strained after annealing. Based on experimental results, it could be concluded that the reduction of thermal compressive stress by additional tensile stress in Ag film plays a critical role to enhance the thermal stability of Ag-based Ohmic contact to p-GaN.

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B형 간염의 가족집적성과 전파경로에 관한 연구 (Familial Clustering and Its Associated Factors in Carriers of Hepatitis B Surface Antigen)

  • 이정애;이명학
    • 농촌의학ㆍ지역보건
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    • 제17권2호
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    • pp.129-136
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    • 1992
  • To evaluate the possible route of intrafamilial transmission among carriers of hepatitis B surface antigen ($HB_sAg$), epidemiologic and serologic data were obtained on 107 household contacts of 35 carriers of HBsAg and on 71 household contacts of 25 controls who were negative for serologic markers of hepatitis B virus. The HBsAg prevalence was 26.5% among the contacts of carriers compared to 0.0% among the contacts of controls. And the combined prevalence for all hepatitis markers was 48.5% among the contacts of carriers compared to 26.0% among the contacts of controls(p<0.05). Especially the offspring of carriers showed significantly higher risk in the combined prevalence for all hepatitis markers (p<0.05). There were no significant relationship between HBV infection and past history like acupuncture, transfusion, operation and tattooed. Factors associated with the risk of intrafamilial transmission of HBV were not found in the sharing of household articles such as razor, towel, drinking glass, nail clippers, toothbrush and tableware.

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결정질 실리콘 태양전지에 적용될 Light-induced plating을 이용한 Ni/Cu 전극에 관한 연구 (The Research of Ni/Cu Contact Using Light-induced Plating for Cryatalline Silicom Solar Cells)

  • 김민정;이수홍
    • 한국태양에너지학회:학술대회논문집
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    • 한국태양에너지학회 2009년도 추계학술발표대회 논문집
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    • pp.350-355
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    • 2009
  • The crysralline silicon solar cell where the solar cell market grows rapidly is occupying of about 85% or more high efficiency and low cost endeavors many crystalline solar cells. The fabricaion process of high efficiency crystalline silicon solar cells necessitate complicated fabrication processes and Ti/Pd/AG contact, This metal contacts have only been used in limited areas in spite of their good srability and low contact resistance because of expensive materials and process. Commercial solar cells with screen-printed solar cells formed by using Ag paste suffer from loe fill factor and high contact resistance and low aspect ratio. Ni and Cu metal contacts have been formed by using electroless plating and light-induced electro plating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on 0.2~0.6${\Omega}$ cm, $20{\times}20mm^2$, CZ(Czochralski) wafer.

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W/WC계 접점의 전기적 특성에 미치는 첨가물의 영향 (Effect of additives on the electrical properties of W/WC contacts)

  • 신대승;이희웅;변우봉;한세원
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1988년도 추계학술대회 논문집
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    • pp.112-114
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    • 1988
  • W/WC-Cu/Ag contacts of 60wt%-40wt% base and contacts with additives(Ni, Co, C) of 1wt% below were prepared by a press-sinter-infiltrate process to compare with their physical properties and arc erosion characteristics. In physical properties, electrical conductivity of contacts with additive is lower than that of base contacts but hardness is higher. The results of arc test show that the erosion rate of contact with -0.1wt% Ni is decreased.

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고효율, 저가화 태양전지에 적합한 Ni/Cu 금속 전극 간격에 따른 특성 평가 (Investigation of the Ni/Cu metal grid space for high-effiency, low cost crystlline silicon solar cells)

  • 김민정;이지훈;조경연;이수홍
    • 한국태양에너지학회:학술대회논문집
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    • 한국태양에너지학회 2009년도 춘계학술발표대회 논문집
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    • pp.225-229
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    • 2009
  • The front metal contact is one of the most important element influences in efficiency in the silicon solar cell. First of all selective of the material and formation method is important in metal contacts. Commercial solar cells with screen-printed contacts formed by using Ag paste process is simple relatively and mass production is easy. But it suffer from a low fill factor and a high shading loss because of high contact resistance. Besides Ag paste too expensive. because of depends income. This paper applied for Ni/Cu metallization replace for paste of screen printing front metal contact. Low cost Ni and Cu metal contacts have been formed by using electroless plating and electroplating techniques to replace the screen-printed Ag contacts. Ni has been proposed as a suitable silicide for the salicidation process and is expected to replace conventional silicides. Copper is a promising material for the electrical contacts in solar cells in terms of conductivity and cost. In experiments Ni/Cu metal contact applied same grid formation of screen-printed solar cell. And it has variation of different grid spacing. It was verified that the wide spacing of grid finger could increase the series resistance also the narrow spacing of grid finger also implies a grid with a higher density of grid fingers. Through different grid spacing found alteration of efficiency.

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Interface Structures of Ag-Si Contacts with Thermal Properties of Frits in Ag Pastes

  • Choi, Seung-Gon;Kim, Dong-Sun;Lee, Jung-Ki;Kim, Hyung-Sun
    • 한국재료학회지
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    • 제22권8호
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    • pp.390-396
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    • 2012
  • Ag pastes added to Bi-oxide frits have been applied to the electrode material of Si solar cells. It has been reported that frits induce contacts between the Ag electrodes and the Si wafer after firing. During firing, the control of interfaces among Ag, the glass layer, and Si is one of the key factors for improving cell performance. Specifically, the thermo-physical properties of frits considerably influence Ag-Si contact. Therefore, the thermal properties of frits should be carefully controlled to enhance the efficiency of cells. In this study, the interface structures among Ag electrodes, glass layers, and recrystallites on an $n^+$ emitter were carefully analyzed with the thermal properties of lead-free frits. First, a cross-section of the area between the Ag electrodes and the Si wafer was studied in order to understand the interface structures in light of the thermal properties of the frits. The depth and area of the pits formed in the Si wafer were quantitatively calculated with the thermal properties of frits. The area of the glass layers between the Ag electrodes and Si, and the distribution of recrystallites on the $n^+$ emitter, were measured from a macroscopic point of view with the characteristics of the frits. Our studies suggest that the thermophysical properties should be controlled for the optimal performance of Si solar cells; our studies also show why cell performance deteriorated due to the high viscosity of frits in Ag pastes.

스크린 인쇄법에 의해 제작된 유기 박막 트랜지스터용 전극에 관한 연구 (A Study on Contacts for Organic thin-film transistors fabricated by Screen Printing Method)

  • 이미영;남수용
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2006년도 춘계학술대회 논문집
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    • pp.591-592
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    • 2006
  • We studied about the manufacture of the drain-source contacts for OTFTs(organic thin-film transistors) by using screen printing method. The conductive fillers used Ag and carbon black. The conductive contacts with $100{\mu}m$ of channel length were screen printed on a silicon dioxide gate dielectric layer and, the pentacene semiconductor was deposited via vacuum deposition. As a result of studying various conductive pastes, we could obtain the OTFTs which exhibited field-effect behavior over arrange of drain-source and gate voltages, similar to devices employing deposited Au contacts. By using screen-printing with conductive paste, the contacts are processed at low temperature, thereby facilitating their integration with heat sensitive substrates.

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AgWC/AgCdO 접점의 소모특성에 미치는 개리속도의 영향 (The Effect of Opening Velocity on the Arc Erosion of AgWC/AgCdO Contacts)

  • 연영명;박흥태;이상엽;조상순;오일성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.517-520
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    • 2003
  • The purpose of this paper is to investigate the effect of arc current and contact velocity on the erosion of silver contact to be used in low voltage circuit breakers. The arc current range from $2kA_{rms}$ to $20kA_{rms}$. A test system allows the control of the opening velocity profiles with contact velocities up to 10m/s and also enables the synchronization of the contact opening with a point on the arc current waveform. Contact erosion is evaluated by measuring the mass change of the cathode and anode. The results show that increase the opening velocity from 2m/s to 6m/s leads to an decrease in the contact erosion. The material transfer from one electrode to another is shown to depend on the transfer charge and the opening velocity of the contacts.

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