• 제목/요약/키워드: Ag bump

검색결과 74건 처리시간 0.033초

SABiT 공법적용 인쇄회로기판의 은 페이스트 범프 크기 및 제작 조건에 따른 전기 저항 특성 (Characterization of Electrical Resistance for SABiT Technology-Applied PCB : Dependence of Bump Size and Fabrication Condition)

  • 송철호;김영훈;이상민;목지수;양용석
    • 한국전기전자재료학회논문지
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    • 제23권4호
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    • pp.298-302
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    • 2010
  • We investigated the resistance change behavior of SABiT (Samsung Advanced Bump interconnection Technology) technology-applied PCB (Printed Circuit Board) with the various bump sizes and fabrication conditions. Many testing samples with different bump size, prepreg thickness, number of print on the formation of Ag paste bump, were made. The resistance of Ag paste bump itself was calculated from the Ag paste resistivity and bump size, measured by using 4-point probe method and FE-SEM (Field Emission Scanning Electron Microscope), respectively. The contact resistance between Ag paste bump and conducting Cu line were obtained by subtracting the Cu line and bump resistances from the measured total resistance. It was found that the contact resistance drastically changed with the variation of Ag paste bump size and the contact resistance had the largest influence on total resistance. We found that the bump size and contact resistance obeyed the power law relationship. The resistance of a circuit in PCB can be estimated from this kind of relationship as the bump size and fabrication technique vary.

Ag Paste bump 구조를 갖는 인쇄회로기판의 Ag migration 발생 안전성 평가 (Investigation of Ag Migration from Ag Paste Bump in Printed Circuit Board)

  • 송철호;김영훈;이상민;목지수;양용석
    • 한국재료학회지
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    • 제20권1호
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    • pp.19-24
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    • 2010
  • The current study examined Ag migration from the Ag paste bump in the SABiT technology-applied PCB. A series of experiments were performed to measure the existence/non-existence of Ag in the insulating prepreg region. The average grain size of Ag paste was 30 nm according to X-ray diffraction (XRD) measurement. Conventional XRD showed limitations in finding a small amount of Ag in the prepreg region. The surface morphology and cross section view in the Cu line-Ag paste bump-Cu line structure were observed using a field emission scanning electron microscope (FE-SEM). The amount of Ag as a function of distance from the edge of Ag paste bump was obtained by FE-SEM with energy dispersive spectroscopy (EDS). We used an electron probe micro analyzer (EPMA) to improve the detecting resolution of Ag content and achieved the Ag distribution function as a function of the distance from the edge of the Ag paste bump. The same method with EPMA was applied for Cu filled via instead of Ag paste bump. We compared the distribution function of Ag and Cu, obtained from EPMA, and concluded that there was no considerable Ag migration effect for the SABiT technology-applied printed circuit board (PCB).

B2it 플래시 메모리 카드용 기판의 Ag 범프/Cu 랜드 접합 계면반응 (Interfacial Reaction of Ag Bump/Cu Land Interface for B2it Flash Memory Card Substrate)

  • 홍원식;차상석
    • 마이크로전자및패키징학회지
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    • 제19권1호
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    • pp.67-73
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    • 2012
  • 본 연구는 고밀도 미세회로 형성 및 원가절감에 유리한 페이스트의 인쇄/건조, 프리프레그 관통 및 적층 공법을 이용한 $B^2it$ 공법을 이용하여 FMC 기판을 제조한 후 열적 스트레스에 대한 범프의 계면반응 연구를 수행하였다. 열적 스트레스에 대한 Ag 범프의 접합 신뢰성을 조사하기 위해 열충격시험, 열응력시험을 수행한 후 전기적 특성 및 단면분석을 통해 균열발생 여부를 조사하였다. 또한 Ag 범프와 Cu 랜드의 접합계면에 대한 계면반응 특성을 분석하기 위해 주사전자현미경(SEM), 에너지분산스펙트럼(EDS) 및 FIB분석을 수행하여 계면에서 발생되는 확산반응을 분석하였다. 이러한 결과를 바탕으로 열적 스트레스에 대한 Ag 페이스트 범프/Cu 랜드 접합계면에서 계면반응에 의해 형성된 Ag-Cu 합금층을 확인할 수 있었다. 이러한 합금층은 Cu ${\rightarrow}$ Ag 보다, Ag ${\rightarrow}$ Cu 로의 확산속도가 빠르기 때문에, Cu층에서의 (Ag, Cu) 합금층이 보다 많이 관찰되었으며, 합금층이 Ag범프의 계면 접합력 향상에 기여하는 것을 알 수 있었다.

플립칩 Sn-3.5Ag 솔더범프의 Electromigration과 Thermomigration 특성 (Electromigration and Thermomigration Characteristics in Flip Chip Sn-3.5Ag Solder Bump)

  • 이장희;임기태;양승택;서민석;정관호;변광유;박영배
    • 대한금속재료학회지
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    • 제46권5호
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    • pp.310-314
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    • 2008
  • Electromigration test of flip chip solder bump is performed at $140^{\circ}C$ C and $4.6{\times}10^4A/cm^2$ conditions in order to compare electromigration with thermomigration behaviors by using electroplated Sn-3.5Ag solder bump with Cu under-bump-metallurgy. As a result of measuring resistance with stressing time, failure mechanism of solder bump was evaluated to have four steps by the fail time. Discrete steps of resistance change during electromigration test are directly compared with microstructural evolution of cross-sectioned solder bump at each step. Thermal gradient in solder bump is very high and the contribution of thermomigration to atomic flux is comparable with pure electromigration effect.

유도가열에 의한 BGA 솔더 범프의 접합특성에 관한 연구 (Joining characteristics of BGA solder bump by induction heating)

  • 방한서;박현후
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2003년도 추계학술발표대회 개요집
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    • pp.86-88
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    • 2003
  • The characteristic of induction heating solder bump(solder ball: Sn-37Pb, Sn-3.5Ag, Sn-3.0Ag-0.5Cu) has analyzed in this paper. The initial condition of induction heating depends on the time and current. The shape of lead-free solder bump is better than lead solder. The shear strength of lead solder bump has decreased with aging time. The average of shear strength of solder bump is about 10N, 11N, and 11N respectively. The lead-free solder bump's shear strength is better than lead solder and varies irregularly with aging time.

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플립칩 패키지내 Sn-3.5Ag 솔더범프의 electromigration (Electromigration of Sn-3.5 Solder Bumps in Flip Chip Package)

  • 이서원;오태성
    • 마이크로전자및패키징학회지
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    • 제10권4호
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    • pp.81-86
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    • 2003
  • 상부 칩과 하부 기판이 모두 Si으로 구성되어 있는 플립칩 패키지 시편을 제조하여 Sn-3.5Ag 솔더범프의 electromigration 거동을 분석하였다. Sn-3.5Ag 솔더범프의 electromigration 테스트 초기부터 파단이 일어나기 직전까지는 플립칩 시편의 저항이 거의 변하지 않았으나, 파단이 발생하는 순간 저항값이 크게 증가하였다. 전류밀도 $3\times 10^4$$4\times 10^4$A/$\textrm{cm}^2$에서 Sn-3.5Ag 솔더범프의 electromigration에 대한 활성화 에너지는 ∼0.7 eV로 분석되었다. Sn-3.5Ag 솔더범프의 cathode 부위의 솔더/UBM 계면에서 void의 형성 및 전파에 의해 솔더범프의 파단이 발생하였다.

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The Stability of Plating Solution and the Current Density Characteristics of the Sn-Ag Plating for the Wafer Bumping

  • Kim, Dong-Hyun;Lee, Seong-Jun
    • 한국표면공학회지
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    • 제50권3호
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    • pp.155-163
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    • 2017
  • In this study, the effects of the concentration of metal ions and the applied current density in the Sn-Ag plating solutions were examined in regards to the resulting composition and morphology of the solder bumps' surface. Furthermore the effect of any impurities present in the methanesulfonic acid used as a base acid in the Sn-Ag solder plating solution on the stability of plating solution as well as the characteristics of the Sn-Ag alloys films was also explored. As expected, the uniform bump was obtained by means of removing impurities in the plating solution. Consequently the resultant solder bump was obtained in an optimal current density of the range of $1A/dm^2$ to $15A/dm^2$, which has acceptable bump shape and surface roughness with 12inch wafer trial results.

유도가열에 의한 Sn-3.5Ag 솔더 범프의 접합 특성에 관한 기초연구 (Joining characteristics of Sn-3.5Ag solder bump by induction heating)

  • 최준기;방희선;;방한서
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2006년 추계학술발표대회 개요집
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    • pp.181-183
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    • 2006
  • This paper studies the mechanical behaviors of Sn-3.5Ag solder joint against substrate(such as Au/Ni/Cu, Au/cu, Ni/Cu and Cu pad) after induction heating, a new soldering method. It was found that the solder bump formation depends on the time and current of the induction heating system. Also the heating value of the solder bump were found to vary with respect to the thermal conductivity of the pads on the substrate. In case of Au/Ni/Cu pad and Au/Cu pad, solder bump's shear strength were high for the heating time of $1.5{\sim}2sec$. For Ni/Cu pad, solder bump's shear strength were found to increase with time increment.

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