• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.910-913
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• 2003

In order to enhance performance, stability, and brightness of inorganic blue-light emitting EL device, barrier layer structure and pulsed laser annealing(PLA) treatment were introduced. The barrier layer structure was utilized for improving brightness of the device and instead of thermal annealing, pulsed laser annealing process was used. From this study, optimum barrier layer thickness and number of pulsed laser irradiation are established.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.597-600
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• 2003

Bi-2223/Ag HTS wires have been fabricated by the PIT(powder in tube)process. Intermediate annealing was carried out to increase the homogenization and uniformity of the superconducting filaments embedded in the silver matrix during the deformation process that is important to sustain the engineering critical current density in long superconducting wire. Intermediate annealing act to release the deformation hardening of the superconducting wires during drawing process. Rolling parameters were investigated to roll the superconducting tapes with uniform thickness, width and winding tensions. Critical current of 60 m long superconducting tapes was measured 54.3 A continuously after final sintering heat treatment. The phase analysis of Bi-2223/Ag superconducting tapes are examined by the XRD.

• Nanomaterials
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• v.12 no.17
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• pp.2983-2998
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• 2022

In this study, a high-photoresponsivity self-powered deep ultraviolet (DUV) photodetector based on an Ag₂O/β-Ga₂O₃ heterojunction was fabricated by depositing a p-type Ag₂O thin film onto an n-type β-Ga₂O₃ layer. The device characteristics after post-annealing at temperatures ranging from 0 to 400 ℃ were investigated. Our DUV devices exhibited typical rectification characteristics. At a post-annealing temperature of 300 ℃, the as-fabricated device had a low leakage current of 4.24 × 10^-11 A, ideality factor of 2.08, and a barrier height of 1.12 eV. Moreover, a high photoresponsivity of 12.87 mA/W was obtained at a 100 µW/cm2 light intensity at a 254 nm wavelength at zero bias voltage, the detectivity was 2.70 × 10¹¹ Jones, and the rise and fall time were 29.76, 46.73 ms, respectively. Based on these results, the Ag₂O/β-Ga₂O₃ heterojunction photodetector operates without an externally applied voltage and has high responsivity, which will help in the performance improvement of ultraviolet sensing systems.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2001.02a
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• pp.145-148
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• 2001

Bi-2223/Ag HTS tapes fabricated by PIT process are used to make the power transmission cable, motor, fault current limiter, transformer etc. But some problems are still remained as like bubbling, sausaging to got the high Jc. In this study. we carried out the experiment to prevent bubbling in the HTS tape. The bubbling mainly occurred when HTS tape was heat-treating. Therefore, additional vacuum annealing at 400 ~ $600^{\circ}C$and slowly ramp-up sintering method were used to decrease the bubbling. slowly ramp-up sintering was more effective to decrease the bubbling than the vacuum annealing, but Jc was also decreased after heat treatment. Optimum ramp-up sintering schedule was searched to get the high critical current and prevent bubbling at same time.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.85-87
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• 2003

Intermediate annealing was carried out during wire drawing for uniform deformation of 500 m class Bi-2223/Ag HTS tapes. Wire drawing force was measured to evaluate the uniformity of wire deformation along the length. To prevent sausage and filament breakage of wire, drawing stress was controlled below 200 MPa by using intermediate annealing process. Thickness and width of the rolled tapes was measured 0.23 mm and 4.1 mm with low deviation $\pm$ 0.08 mm and $\pm$ 0.09 mm, respectively. The critical current of the 500 m tapes was measured 33.7 A $\pm$ 3.7 A by continuous critical current measurement system.

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.125-131
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• 2015

Fluorine-doped $SnO_2$ (FTO) thin film/Ag nanowire (NW) double layers were fabricated by means of spin coating and ultrasonic spray pyrolysis. To investigate the optimum thickness of the FTO thin films when used as protection layer for Ag NWs, the deposition time of the ultrasonic spray pyrolysis process was varied at 0, 1, 3, 5, or 10 min. The structural, chemical, morphological, electrical, and optical properties of the double layers were examined using X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, the Hall effect measurement system, and UV-Vis spectrophotometry. Although pure Ag NWs formed isolated droplet-shaped Ag particles at an annealing temperature of $300^{\circ}C$, Ag NWs covered by FTO thin films maintained their high-aspect-ratio morphology. As the deposition time of the FTO thin films increased, the electrical and optical properties of the double layers degraded gradually. Therefore, the double layer fabricated with FTO thin films deposited for 1 min exhibited superb sheet resistance (${\sim}14.9{\Omega}/{\Box}$), high optical transmittance (~88.6 %), the best FOM (${\sim}19.9{\times}10^{-3}{\Omega}^{-1}$), and excellent thermal stability at an annealing temperature of $300^{\circ}C$ owing to the good morphology maintenance of the Ag NWs covered by FTO thin films.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.1
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• pp.1-9
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• 2005

A stoichiometric mixture of evaporating materials for AgGaS₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, AgGaS₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were 590℃ and 440℃, respectively. The temperature dependence of the energy band gap of the AgGaS₂ obtained from the absorption spectra was well described by the Varshni's relation, E/sub g/(T) = 2.7284 eV - (8.695×10/sup -4/ eV/K)T²/(T + 332 K). After the as-grown AgGaS₂ single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of AgGaS₂ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of V/sub Ag/, V/sub s/, Ag/sub int/, and S/sub int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted AgGaS₂ single crystal thin films to an optical n-type. Also, we confirmed that Ga in AgGaS₂/GaAs crystal thin films did not form the native defects because Ga in AgGaS₂ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.189-197
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• 2006

A stoichiometric mixture of evaporating materials for $AgGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C\;and\;420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501eV-(8.79x10^{-4}eV/K)T^2(T+250K)$. After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence (PL) at 10K. The native defects of $V_{Ag},\;V_{Se},\;Ag_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.59-64
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• 2013

In-situ annealing tests of Cu/Ni/Au/Sn-Ag/Cu micro-bump for 3D IC package were performed in an scanning electron microscope chamber at $135-170^{\circ}C$ in order to investigate the growth kinetics of intermetallic compound (IMC). The IMC growth behaviors of both $Cu_3Sn$ and $(Cu,Ni,Au)_6Sn_5$ follow linear relationship with the square root of the annealing time, which could be understood by the dominant diffusion mechanism. Two IMC phases with slightly different compositions, that is, $(Cu,Au^a)_6Sn_5$ and $(Cu,Au^b)_6Sn_5$ formed at Cu/solder interface after bonding and grew with increased annealing time. By the way, $Cu_3Sn$ and $(Cu,Au^b)_6Sn_5$ phases formed at the interfaces between $(Cu,Ni,Au)_6Sn_5$ and Ni/Sn, respectively, and both grew with increased annealing time. The activation energies for $Cu_3Sn$ and $(Cu,Ni,Au)_6Sn_5$ IMC growths during annealing were 0.69 and 0.84 eV, respectively, where Ni layer seems to serve as diffusion barrier for extensive Cu-Sn IMC formation which is expected to contribute to the improvement of electrical reliability of micro-bump.

• Journal of the Korean Magnetics Society
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• v.9 no.6
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• pp.285-290
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• 1999

The magnetic properties of sputtered amorphous $Fe_{86.7}Zr_{3.3}B_4Ag_6$ thin films, which contains an additional insoluble element Ag, have been investigated as a function of uniaxal field annealing temperature. The amorphous $Fe_{86.7}Zr_{3.3}B_4Ag_6$ thin films produced by relatively low temperature annealing at 40$0^{\circ}C$ for 1 hour was found to have very high permeability of 7800 at 50 MHz, 0.2 mOe, high magnetization of 1.7 T, low coercivity of 1.0 Oe and very low core loss of 1.4 W/cc at 1 MHz, 0.1 T, respectively. It is notable that the permeability and core loss values for various kinds of the soft magnetic thin films reported up to now. The reason for the appearance for the good soft magnetic properties is presumably due to the homogeneous formation of very fine bcc $\alpha$-Fe clusters with the size in the amorphous $Fe_{86.7}Zr_{3.3}B_4Ag_6$ thin films matrix, which can be deduced from the XRD results.