• Journal of Electrochemical Science and Technology
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• 제8권4호
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• pp.344-355
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• 2017

In this study, a numerical approach is adopted to investigate the effectiveness factors for distributed electrochemical reactions in thin active reaction layers of solid oxide fuel cells (SOFCs), taking into account the Butler-Volmer reaction kinetics. The mathematical equations for the electrochemical reaction and charge conduction process were formulated by assuming that the active reaction layer has a small thickness, homogeneous microstructure, and high effective electronic conductivity. The effectiveness factor is defined as the ratio of the actual reaction rate (or equivalently, current generation rate) in the active reaction layer to the nominal reaction rate. From extensive numerical calculations, the effectiveness factors were obtained for various charge transfer coefficients of 0.3-0.8. These effectiveness data were then fitted to simple correlation equations, and the resulting correlation coefficients are presented along with estimated magnitude of error.

• Applied Science and Convergence Technology
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• 제26권5호
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

• Journal of Welding and Joining
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• 제13권3호
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• pp.134-146
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• 1995

Aluminium nitride(AlN) is currently under investigation as potential candidate for replacing alumium oxide(Al$_{2}$ $O_{3}$) as a substrate material for for electronic circuit packaging. Brazing of aluminium nitride(AlN) to Cu with Ag base active alloy containing Ti has been investigated in vacuum. Binary Ag$_{98}$ $Ti_{2}$(AT) and ternary At-1wt.%Al(ATA), AT-1wt.%Ni(ATN), AT-1wt.% Mn(ATM) alloys showed good wettability to AlN and led to the development of strong bond between brate alloy and AlN ceramic. The reaction between AlN and the melted brazing alloys resulted in the formation of continuous TiN layers at the AlN side iterface. This reaction layer was found to increase by increase by increasing brazing time and temperature for all filler metals. The bond strength, measured by 4-point bend test, was increased with bonding temperature and showed maximum value and then decreased with temperature. It might be concluded that optimum thickness of the reaction layer was existed for maximum bond strength. The joint brazed at 900.deg.C for 1800sec using binary AT alloy fractured at the maximum load of 35kgf which is the highest value measured in this work. The failure of this joint was initiated at the interface between AlN and TiN layer and then proceeded alternately through the interior of the reaction layer and AlN ceramic itself.

• 한국분말재료학회지
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• 제4권3호
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• pp.196-204
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• 1997

Joining of AIN ceramics to W and Cu by active-metal brazing method was tried with use of (Ag-Cu)-Ti alloy as insert-metal. Joints were produced under various conditions of temperature, holding time and Ti-content in (Ag-Cu) alloy Reaction and microstructural development in bonded interface were investigated through observation and analysis by SEM/EDS, EPMA and XRD. Joint strengths were measured by shear test. Bonded interface consists of two layers: an insert-metal layer of eutectic Ag- and Cu-rich phases and a reaction layer of TiN. Thickness of reaction layer increases with bonding temperature, holding time and Ti-content of insert-metal. It was confirmed that the growth of reaction layer is a diffusion-controlled process. Activation energy for this process was 260 KJ/mol which is lower than that for N diffusion in TiN. Maximum shear strength of 108 MPa and 72 MPa were obtained for AIN/W and AIN/Cu joints, respectively. Relationship between processing variables, joint strength and thickness of reaction layer was also explained.

• Journal of Welding and Joining
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• 제32권1호
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• pp.66-70
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• 2014

In Ti active brazing of YSZ to STS 430 using Ag-Cu Filler Metal, the effect of Ti contents on the shear bonding strength were investigated together with the effect of brazing temperature and holding time. The addition of Ti in Ag-Cu Filler Metal increased the bonding strength up to 4.68% Ti, followed by the decrease with further addition. This seems to be caused by formation of TixOy at the reaction layer. Brazing temperature was optimized at $960^{\circ}C$ among a given temperature ranges. The addion of Sn to Ag-Cu filler metal brought the decrease of its melting temperature its melting temperature without a significant decrease of bonging strength.

• 멤브레인
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• 제24권5호
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• pp.367-374
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• 2014

본 연구에서는 LSCF/GDC (20 : 80 vol%) 복합 분리막 표면에 LSC/GDC (50 : 50 vol%) 활성층을 코팅한 후 활성층의 열처리 온도, 두께, 침투법을 이용한 STF 도입이 산소투과 특성에 미치는 영향을 고찰하였다. 활성층 도입은 복합 분리막의 산소 투과 유속을 급격히 증진시켰으며 이는 활성층 성분인 LSC/GDC (50 : 50 vol%)가 전자 전도성 및 표면 산소 분해 반응을 증진시켰기 때문이었다. 활성층의 열처리 온도가 $900^{\circ}C$에서 $1000^{\circ}C$로 증가한 경우, 산소 투과 유속은 증가하였고 이는 분리막과 활성층 사이 그리고 활성층의 결정입간 접촉이 증진하여 산소이온과 전자 흐름을 증진시켰기 때문으로 설명되었다. 코팅층의 두께가 약 $10{\mu}m$에서 약 $20{\mu}m$로 증가한 경우, 산소 투과 유속은 오히려 감소하였는데 이는 코팅층의 두께가 증가할수록 기공을 통한 공기 중의 산소 유입이 어려워지기 때문으로 설명되었다. 또한, 코팅층에 침투법을 이용하여 STF를 도입한 경우가 STF를 도입하지 않은 경우 보다 높은 산소 투과 유속을 보였는데 이는 도입된 STF가 산소 분해하는 표면 반응 속도를 촉진시키기 때문이다. 본 연구로부터 LSC/GDC (50 : 50 vol%) 활성층 코팅 및 특성 제어는 LSCF/GDC (20 : 80 vol%) 복합 분리막의 산소투과 증진에 매우 중요함을 확인하였다.

• 한국공작기계학회논문집
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• 제16권3호
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• pp.133-140
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• 2007

A 2-D model of fluid flow, mass transport and electrochemistry is analysed to examine the effect of current density at the current collector depending on active layer thickness of catlyst in polymer elecrolyte fuel cells. The finite element method is used to solve the continuity, potential and Maxwell-Stefan equations in the flow channel and gas diffusion electrode regions. For the material behavior of electrode reactions in the active catalyst layers, the agglomerate model is implemented to solve the diffusion-reaction problem. The calculated model results are described and compared with the different thickness of active catalyst layers. The significance of the results is discussed in the viewpoint of the current collecting capabilities as well as mass transportation phenomena, which is inferred that the mass transport of reactants dictates the efficiency of the electrode in the present analysis.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.72-72
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• 2010

Recent development of organic solar cell approaches the level of 8% power conversion efficiency by the introduction of new materials, improved material engineering, and more sophisticated device structures. As for interface engineering, various interlayer materials such as LiF, CaO, NaF, and KF have been utilized between Al electrode and active layer. Those materials lower the work function of cathode and interface barrier, protect the active layer, enhance charge collection efficiency, and induce active layer doping. However, the addition of another step of thin layer deposition could be a little complicated. Thus, on a typical solar cell structure of Al/P3HT:PCBM/PEDOT:PSS/ITO glass, we used Li:Al alloy electrode instead of Al to render a simple process. J-V measurement under dark and light illumination on the polymer solar cell using Li:Al cathode shows the improvement in electric properties such as decrease in leakage current and series resistance, and increase in circuit current density. This effective charge collection and electron transport correspond to lowered energy barrier for electron transport at the interface, which is measured by ultraviolet photoelectron spectroscopy. Indeed, through the measurement of secondary ion mass spectroscopy, the Li atoms turn out to be located mainly at the interface between polymer and Al metal. In addition, the chemical reaction between polymer and metal electrodes are measured by X-ray photoelectron spectroscopy.

• 한국세라믹학회지
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• 제37권4호
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• pp.381-387
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• 2000

Si3N4/stainless steel 316 joints with Ni buffer layer were fabricated by direct active brazing method (DIB) using Ag-Cu-Ti brazing alloy only and double brazing method (DOB) using Ag-Cu brazing alloy with Si3N4 pretreated with Ag-Cu-Ti brazing alloy. For the joint brazed by DIB method, Ti was segregated at the Si3N4/brazing alloy interface, but was not enough to form a stable joint interface. In addition, large amounts of Ni-Ti inter-metallic compounds were formed in tehbrazing alloy near the joint interface, which could deplete the contents of Ti involved in the interfacial reaction. However, for the joint brazed by DOB method, segregation of Ti at the joint interface were enough to enhance the formation of stable interfacial reaction products such as TiN and Ti-Si-Ni-N-(Cu) multicompounds, which restricted the formation of Ni-Tio inter-metallic compounds in the brazing alloy during brazing with Ni buffer layer. Fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was much improved by using DOB method rather than DIB method. It could be deduced that the differences of fracture strength of the joint with Ni buffer layer depending on brazing process adapted were directly affected by the formation of stable joint interface and the change in microstructure of the brazing alloy near the joint interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of Ni buffer layer in the joint was increased from 0.1 mm to 10 mm. It seems to due to the increased residual stress in the joint as the thickness of Ni buffer layer is increased. The maximum fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was 386 MPa, and the fracture of joint was originated at Si3N4/brazing alloy joint interface and propagated into Si3N4 matrix.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.253-254
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• 2009

본 연구는 다결정 알루미나 소결체와 사파이어웨이퍼(sapphire wafer)의 견고한 접합을 위해 활성금속 Ti가 함유된 Active Filler Metal을 사용하였고, 이를 브레이징한 후 접합 반응층과 Ti 거동 특성에 관한 것이다. 브레이징 (brazing)은 Ar 분위기 종에 $850^{\circ}C$에서 이행하였으며. 이때 다결정 알루미나, 사파이어와 Active Filler Metal 사이의 접합 반응층을 확인하였다. Active Filler Metal 내어| 존재하는 Ti가 접할 반응층의 양계면에 집중되는 것을 SEM을 이용하여 확인하였다. 또한 EDS Line Scanning을 실시하여 접합부에서 원소들의 분포를 관찰하였다.