• 제목/요약/키워드: Active layer

검색결과 1,401건 처리시간 0.029초

Effects of the Mixing of an Active Material and a Conductive Additive on the Electric Double Layer Capacitor Performance in Organic Electrolyte

  • Yang, Inchan;Kwon, Soon Hyung;Kim, Bum-Soo;Kim, Sang-Gil;Lee, Byung-Jun;Kim, Myung-Soo;Jung, Ji Chul
    • 한국재료학회지
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    • 제25권3호
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    • pp.132-137
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    • 2015
  • The effects of the mixing of an active material and a conductive additive on the electrochemical performance of an electric double layer capacitor (EDLC) electrode were investigated. Coin-type EDLC cells with an organic electrolyte were fabricated using the electrode samples with different ball-milling times for the mixing of an active material and a conductive additive. The ball-milling time had a strong influence on the electrochemical performance of the EDLC electrode. The homogeneous mixing of the active material and the conductive additive by ball-milling was very important to obtain an efficient EDLC electrode. However, an EDLC electrode with an excessive ball-milling time displayed low electrical conductivity due to the characteristic change of a conductive additive, leading to poor electrochemical performance. The mixing of an active material and a conductive additive played a crucial role in determining the electrochemical performance of EDLC electrode. The optimal ball-milling time contributed to a homogeneous mixing of an active material and a conductive additive, leading to good electrochemical performance of the EDLC electrode.

전도성 폴리아닐린(Polyaniline)을 이용한 전기작동 종이(EAPap)의 굽힘변형 개선 (Bending Displace Improvement of Electro-active Paper Using Conductive Polyaniline Coating)

  • 김주형;윤성률;김재환
    • 한국소음진동공학회논문집
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    • 제18권12호
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    • pp.1310-1316
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    • 2008
  • Bi-layer and tri-layer structures of electro-active paper(EAPap) using conductive polyaniline(PANI) coating were investigated to improve bending displacement of cellulose EAPap. Two different counter ions, perchlorate($CIO_4^-$) and tetrafluoroborate($BF_4^-$), are used as dopant ions in the PANI processing. The actuation performances of hi-layer and tri-layer structure are evaluated in terms of tip displacement, blocked force, strain energy density and power output density. The actuation performance of the tri-layer actuator was better than the hi-layer structure, and the maximum displacement and blocked force of tri-layer $CIO_4^-$ doped-PANI-EAPap were 13.2 mm and 0.15 mN, respectively. Also the power output of the actuator is similar to the required power of biological muscle application.

Improving Device Efficiency for n-i-p Type Solar Cells with Various Optimized Active Layers

  • Iftiquar, Sk Md;Yi, Junsin
    • Transactions on Electrical and Electronic Materials
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    • 제18권2호
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    • pp.70-73
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    • 2017
  • We investigated n-i-p type single junction hydrogenated amorphous silicon oxide solar cells. These cells were without front surface texture or back reflector. Maximum power point efficiency of these cells showed that an optimized device structure is needed to get the best device output. This depends on the thickness and defect density ($N_d$) of the active layer. A typical 10% photovoltaic device conversion efficiency was obtained with a $N_d=8.86{\times}10^{15}cm^{-3}$ defect density and 630 nm active layer thickness. Our investigation suggests a correlation between defect density and active layer thickness to device efficiency. We found that amorphous silicon solar cell efficiency can be improved to well above 10%.

Effect of the size of active device and heatsink of power MOSFETs on its the junction to ambient transient thermal behavior

  • Koh, Jeong-Wook;An, Chul
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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    • pp.241-244
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    • 2000
  • To investigate the compact effect of the different area of an active layer and the different type of heatsink on the junction to ambient transient thermal impedance, we have characterized the thermal behavior of power MOSFETs that have three different areas of an active layer and two types of heatsink. To do so, the "cooling curve method" has been used in order to measure the junction-to-ambient transient thermal impedance Zthja that represents the thermal behavior of the devices. The measured data depiets that the larger area of an active layer gives the better-in other words. smaller-thermal impedance, and that the larger size of a heatsink improves the thermal impedance.

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능동구속층 감쇠를 이용한 판의 동역학적 해석 (Dynamic Analysis of Plates with Active Constrained Layer Damping)

  • 박철휴
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2004년도 춘계학술대회논문집
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    • pp.581-586
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    • 2004
  • This paper presents Newtonian formulation of the dynamics of plates treated fully with Active Constrained Layer Damping (ACLD). The developed equations of the plate/ACLD system provide analytical models far predicting the dynamic of laminated plates subjected to passive and active vibration damping controls. Numerical solutions of the analytical models are presented fir simply-supported plates in order to study the performance of the plate/ACLD system for different control strategies. The developed models present invaluable means for designing and predicting the performance of the smart laminated plates that can be used in many critical engineering applications.

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Comparisons of smart damping treatments based on FEM modeling of electromechanical impedance

  • Providakis, C.P.;Kontoni, D.P.N.;Voutetaki, M.E.;Stavroulaki, M.E.
    • Smart Structures and Systems
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    • 제4권1호
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    • pp.35-46
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    • 2008
  • In this paper the authors address the problem of comparing two different smart damping techniques using the numerical modelling of the electro-mechanical impedance for plate structures partially treated with active constrained layer damping treatments. The paper summarizes the modelling procedures including a finite element formulation capable of accounting for the observed behaviour. The example used is a smart cantilever plate structure containing a viscoelastic material (VEM) layer sandwiched between a piezoelectric constrained layer and the host vibrating plate. Comparisons are made between active constrained layer and active damping only and based on the resonance frequency amplitudes of the electrical admittance numerically evaluated at the surface of the piezoelectric model of the vibrating structure.

Characteristics of Polymer Solar Cells Depending on the Thickness of Active Layer

  • Lee, Dong-Gu;Noh, Seung-Uk;Suman, C.K.;Kim, Jun-Young;Lee, Seong-Hoon;Lee, Chang-Hee
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1204-1207
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    • 2009
  • We investigated the device performance of bulk heterojunction solar cells depending on the active layer thickness. For the systematic comparison, the polymer solar cells comprising RR-P3HT:PCBM (1:0.8 (wt%:wt%)) blend films with different thickness were characterized by impedance spectroscopy, and J-V measurement in dark and solar simulated illumination. The device with 120 nm thickness of active layer exhibited maximum power conversion efficiency of 3.5 % under AM 1.5 100mW/$cm^2$ illumination condition.

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Protective Layer on Active Layer of Al-Zn-Sn-O Thin Film Transistors for Transparent AMOLED

  • Cho, Doo-Hee;KoPark, Sang-Hee;Yang, Shin-Hyuk;Byun, Chun-Won;Cho, Kyoung-Ik;Ryu, Min-Ki;Chung, Sung-Mook;Cheong, Woo-Seok;Yoon, Sung-Min;Hwang, Chi-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.318-321
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    • 2009
  • We have studied transparent top gate Al-Zn-Sn-O (AZTO) TFTs with an $Al_2O_3$ protective layer (PL) on an active layer. We also fabricated a transparent 2.5 inch QCIF+AMOLED display panel using the AZTO TFT back-plane. The AZTO active layers were deposited by RF magnetron sputtering at room temperature and the PL was deposited by ALD with two different processes. The mobility and subthreshold slope were superior in the cases of the vacuum annealing and the oxygen plasma PL compared to the $O_2$ annealing and the water vapor PL, however, the bias stability was excellent for the TFTs of the $O_2$ annealing and the water vapor PL.

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내부 Stripe 구조와 휜 활성충의 AlGaAs 다이오드 레이저 (Curved active layer inner stripe AlGaAs diode laser)

  • 송재경
    • 한국광학회:학술대회논문집
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    • 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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    • pp.169-171
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    • 1989
  • The curved active layer inner stripe(CALIS) laser diode has been developed. The tight confinements of current and carrier result in low thershold current(20-30mA) with stable fundamental transverse mode operation up to the output power of 30mW CW.

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Pb 기판/활물질 계면의 부식층형성에 미치는 합금원소영향 (Effects of Alloying Elements on the Corrosion Layer Formation of Pb-Grid/Active Materials Interface)

  • 오세웅;최한철
    • 한국표면공학회지
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    • 제40권5호
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    • pp.225-233
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    • 2007
  • Effects of alloying elements on the corrosion layer formation of Pb-grid/active materials interface has been researched for improvement of corrosion resistance of Pb-Ca alloy. For this research, various amounts of alloying elements such as Sn, Ag and Ba were added to the Pb-Ca alloys and investigated their corrosion behaviors. Batteries fabricated by using these alloys as cathode grids were subjected to life cycle test. Overcharge life cycle test was carried out at $75^{\circ}C$, 4.5 A, for 110 hrs. with KS standard (KSC 8504). And then, after keeping the battery with open circuit state for 48 hr, discharge was carried out at 300A for 30 sec. Corrosion morphology and interface between Pb-grid and active materials were investigated by using ICP, SEM, WDX, and LPM. Corrosion layer of Pb-Ca alloy got thicken with increasing Ca content. For Pb-Ca-Sn alloy, thickness of corrosion layer decreased as Sn and Ag content increased gradually. In case of Pb-Ca-Sn-Ba alloy, thickness of corrosion layer decreased up to 0.02 wt% Ba addition, whereas, it was not changed in case of above 0.02 wt% Ba addition.