• Proceedings of the IEEK Conference
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• 2003.11c
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• pp.32-36
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• 2003

In this work, we have designed a fully integrated 2.4GHz LC-tuned voltage-controlled oscillator (VCO) with multiple tuning inputs for a 0.25-$\mu\textrm{m}$ standard CMOS process. The design of voltage-controlled oscillator is based on an LC-resonator with a spiral inductor of octagonal type and pMOS-varactors. Only two metal layer have been used in the designed inductor. The frequency tuning is achieved by using parallel pMOS transistors as varactors and back-gate tuned pMOS transistors in an active region. Coarse tuning is achieved by using 3-bit pMOS-varactors and fine tuning is performed by using back-gate tuned pMOS transistors in the active region. When 3-bit digital and analog inputs are applied to the designed circuits, voltage-controlled oscillator shows the tuning feature of frequency range between 2.3 GHz and 2.64 GHz. At the power supply voltage of 2.5 V, phase noise is -128dBc/Hz at 3MHz offset from the carrier. Total power dissipation is 7.5 mW.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.283-286
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• 1999

A 2㎓, low noise, low power CMOS voltage-controlled oscillator (VCO) with an integrated LC resonator is presented. The design of VCO relies heavily on the on-chip spiral inductor. An optimized spiral inductor with Q-factor of nearly 8 is achieved and used for the VCO. The simulated result of phase noise is as low as -l14 ㏈c/Hz at an offset frequency of a 600KHz from a 2㎓ carrier frequency. The VCO is tuned with standard available junction capacitors, resulting in an about 400MHz tuning range (20%). Implemented in a five-metal 0.25${\mu}{\textrm}{m}$ standard CMOS process, the VCO consumes only 2㎽ from a single 2.5V supply. It occupies an active area of 620${\mu}{\textrm}{m}$$\times$720${\mu}{\textrm}{m}$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.2
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• pp.408-414
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• 2005

The VCDRO(Voltage Controlled Dielectric Resonate. Oscillator) with low phase noise is designed using nonlinear analysis, and its phase noise characteristics are compared with that of Lesson's equation. The microstripline coupled with dielectric resonator is realized as a high impedance inverter to improve the phase noise performance, and the quality factor of resonator circuit can be transferred to active device with the enhanced the loaded quality factor. The worst case and part stress analyses are achieved to obtain the high reliability of VCDRO and the reliability analysis is accomplished to estimate the probability of operation at the end of life. The developed VCDRO has the oscillating tuning factor of 0.56MHZ1V for the control voltage range of 0-l2V. This VCDRO requires the DC power of 136mW. The phase noise characteristics exhibit good performances of -94.18dBc/Hz (a)10KHz and -116.3dBc/Hz (a)100KHz. And, the output power over 7.33dBm is measured.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.1
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• pp.74-79
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• 2002

The EM(Engineering Model) VCO(Voltage Controlled Oscillator) is nonlinear designed for LO(Local Oscillator) of Ka-band satellite transponder. The microstripline coupled with dielectric resonator is implemented as a high impedance inverter to improve the phase noise, and the quality factor of resonant circuit can be transferred to active device with the enhanced loaded quality factor. The developed VCO has the oscillating tuning range of 9.7965~9.8032 GHz for the control voltage range of 0~12 V. This VCO requires the DC power of 8 V and 17 mA. The phase noise characteristics are -96.51 dBc/Hz @10 KHz and -116.5 dBc/Hz @100 KHz, respectively. And, the output power of 7.33 dBm is measured.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.10
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• pp.109-117
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• 2004

In this paper, a K-band local oscillator composed of a VCDRO(Voltage Controlled Dielectric Resonator Oscillator), GaAs MESFET, and Reflector type frequency doubler has been designed and fabricated. TO obtain a good phase noise performance of a VCDRO, a active device was selected with a low noise figure and a low flicker noise MESFET and a dielectric resonator was used for selecting stable and high oscillation frequency. Especially, to have a higher conversion gain than a conventional doubler as well as a good harmonic suppression performance with circuit size reduced a doubler structure was employed as the Reflector type composed of a reflector and a open stub of quarter wave length for rejecting the unwanted harmonics. The measured results of fabricated oscillator show that the output power was 5.8 dBm at center frequency 12.05 GHz and harmonic suppression -37.98 dBc, Phase noise -114 dBc at 100 KHz offset frequency, respectively, and measured results show of fabricated frequency doubler, the output power at 5.8 dBm of input power is 1.755 dBm conversion gain 1.482 dB, harmonic suppression -33.09 dBc, phase noise -98.23 dBc at 100 KHz offset frequency, respectively. This oscillator could be available to a local oscillator in K-band which used frequency doubler techniques.

• Journal of the Korean Institute of Telematics and Electronics
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• v.3 no.4
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• pp.16-24
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• 1966

The LASER Amplifier is treated in the manner of a Fabry-Perot Resonator with an active media, five layers are considered: air, reflector, active medium(ruby), reflector and air. One dimensional scalar wave equations are derived using the method of boundary value probrems in which it is assumed that incident coherent radiation falls normally on the surface wall. All equations are treated from the transient analysis point of view using the Laplace transform nethods, and are arranged steady state region as an amplifier and transient region as a self excited oscillator. Also some remarks are given on the design problem of LASER amplifier in connection with the transient terms involved.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.3 no.1 s.4
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• pp.13-19
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• 2004

The VCO(Voltage Controlled Oscillator) with low phase noise and high reliability is implemented using nonlinear design, and its phase noise characteristics are compared with that of Lesson's equation. The microstripline coupled with dielectric resonator is realized as a high impedance inverter to improve the phase noise, and the qualify factor of resonator circuit can be transferred to active device with the enhanced the loaded quality factor. The worst case and part stress analyses are achieved to obtain the high reliability of VCO. The developed VCO has the oscillating tuning factor of 0.56MHz/V for the control voltage range of 0$\~$12V This VCO requires the DC power of 160mW. The phase noise characteristics exhibit good performances of -96.51dBc/Hz @ 10KHz and -116.3dBc/Hz @ 100KHz, respectively. And, the output power of 7.33 dBm is measured.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.5
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• pp.468-474
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• 2010

In this paper, a VCHO(Voltage Controlled Harmonic Oscillator) for K-band application has been designed and implemented. The proposed oscillator has a structure of two hair-pin resonators placed on input and output of active device. Using in/out common frequency tuning structure, the VCHO yields some advantages of the enhanced fundamental frequency suppression characteristic as well as the improved output power of second harmonic. According to implementation and measurement results, it was shown that a VCHO provides an output power of -2.41 dBm, a fundamental frequency suppression of -21.84 dBc, and phase noise of -101.44 dBc/Hz at 100 kHz offset. In addition, as for the bias voltage from 0 V to -10 V for the varactor diode, output frequency range of 10.58 MHz is obtained with a power variation of ${\pm}0.19\;dB$ over its frequency range.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.3
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• pp.784-794
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• 1996

In this papre, the design and the fabrication of the surface mountable voltage controlled oscillator is described for local oscillator in PCS(WACS/TDMA) handset. The VCO employs two silicon bipolar transistors of $f_{gamma}$ of 4 GHz as active devices. These are asembled to form the VCO on the 4 layer PCB of the size $12{\times}10mm$which provides the strip line resonator at the third layer. The fabricated VCO shows tuning rage over 50 MHz, phase noise -100 dBc/Hz at the 100 kHz frequency offset, and 0 dBm output power with the consumption of 22 mA at 3V. It is belived that the size will be more reduced by employing 1005 chip components and that the current consumption will be improved by employing transistors of higher $f_{gamma}$.

• Journal of Institute of Control, Robotics and Systems
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• v.18 no.6
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• pp.546-554
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• 2012

This paper suggests a design method of an improved phase control loop for tracking resonant frequency of solid type precision resonant gyroscope. In general, a low cost MEMS gyroscope adapts the automatic gain control loops by taking a velocity feedback configuration. This control technique for controlling the resonance amplitude shows a stable performance. But in terms of resonant frequency tracking, this technique shows an unreliable performance due to phase errors because the AGC method cannot provide an active phase control capability. For the resonance control loop design of a solid type precision resonant gyroscope, this paper presents a phase domain control loop based on linear PLL (Phase Locked Loop). In particular, phase control loop is exploited using a higher order PLL loop filter by extending the first order active PI (Proportion-Integral) filter. For the verification of the proposed loop design, a hemispherical resonant gyroscope is considered. Numerical simulation result demonstrates that the control loop shows a robust performance against initial resonant frequency gap between resonator and voltage control oscillator. Also it is verified that the designed loop achieves a stable oscillation even under the initial frequency gap condition of about 25 Hz, which amounts to about 1% of the natural frequency of a conventional resonant gyroscope.