• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.10
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• pp.877-882
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• 2016

In this paper, a novel CMOS high Q factor 2-port active inductor has been proposed. The proposed circuit is designed by cascading basic gyrator-C structural active inductors and attaching the feedback LC resonance circuit. This LC resonator can compensate parasitic capacitance of transistor and can improve Q factor over wide frequency range. The proposed circuit was fabricated and simulated using 65 nm Samsung RF CMOS process. The fabricated circuit shows inductance of above 2 nH and Q factor higher than 40 in the frequency range of 1~6 GHz.

• Journal of the Korean Institute of Telematics and Electronics
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• v.3 no.4
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• pp.16-24
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• 1966

The LASER Amplifier is treated in the manner of a Fabry-Perot Resonator with an active media, five layers are considered: air, reflector, active medium(ruby), reflector and air. One dimensional scalar wave equations are derived using the method of boundary value probrems in which it is assumed that incident coherent radiation falls normally on the surface wall. All equations are treated from the transient analysis point of view using the Laplace transform nethods, and are arranged steady state region as an amplifier and transient region as a self excited oscillator. Also some remarks are given on the design problem of LASER amplifier in connection with the transient terms involved.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.2
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• pp.408-414
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• 2005

The VCDRO(Voltage Controlled Dielectric Resonate. Oscillator) with low phase noise is designed using nonlinear analysis, and its phase noise characteristics are compared with that of Lesson's equation. The microstripline coupled with dielectric resonator is realized as a high impedance inverter to improve the phase noise performance, and the quality factor of resonator circuit can be transferred to active device with the enhanced the loaded quality factor. The worst case and part stress analyses are achieved to obtain the high reliability of VCDRO and the reliability analysis is accomplished to estimate the probability of operation at the end of life. The developed VCDRO has the oscillating tuning factor of 0.56MHZ1V for the control voltage range of 0-l2V. This VCDRO requires the DC power of 136mW. The phase noise characteristics exhibit good performances of -94.18dBc/Hz (a)10KHz and -116.3dBc/Hz (a)100KHz. And, the output power over 7.33dBm is measured.

• Korean Journal of Optics and Photonics
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• v.20 no.4
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• pp.217-222
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• 2009

In this paper, a low-cost hybrid-integrated tunable laser is realized using a polymer-ring resonator-based add/drop filter reflector and a reflective semiconductor optical amplifier. The add/drop filter reflector, composed of a double-ring resonator with different radii, can have characteristics of selective wavelength reflection and wide wavelength tuning with an aid of vernier effect derived from the radii difference. By hybrid-integrating the reflective semiconductor optical amplifier with the add/drop filter reflector, a tunable laser can be realized through an active alignment method. The hybrid laser exhibited a single mode lasing with side mode suppression ratio of 26 dB and full width half maximum of 0.03 nm. In addition, applying a low current as small as 25 mA onto electrodes over add/drop filter reflector, a wavelength tuning range of 17 nm could be obtained.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.2A
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• pp.122-128
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• 2005

In this paper, a low noise parallel feedback oscillator for harmonic suppression and a frequency doubler are designed and implemented. As the fundamental signal of the oscillator for frequency doubling is extracted between the dielectric resonator (DR) filter and the gate device of the active device, the undesired harmonics at the output of the oscillator is remarkably suppressed. The fundamental signal of the oscillator for frequency doubling directly feeds to the frequency doubler without an additional band pass filter for harmonic suppression. The second harmonic suppression of -47.7 dBc at the oscillator output is achieved, while the fundamental suppression of -37.5 dBc at the doubler output is obtained. The phase noise characteristics are -80.3 dBc/Hz and -93.5 dBc/Hz at the offset frequency of 10 KHz and 100 KHz from the carrier, respectively.

• Journal of the Optical Society of Korea
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• v.1 no.2
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• pp.110-115
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• 1997

We report effcient cascaded Raman generation and signal amplification at 1.3.mu.m achieved in a ring resonator constructed solely from fiber components, i.e. fusion WDM couplers. Low-loss single-mode fiber with moderate $GeO_2$ content (18 mole %) is used as an active medium and pumped by a Nd:YAG laser at 1.064.mu.m. In a resonant cascaded geometry, this generates the third Stokes line at 1.24.mu.m, which acts as a pump for signal wavelength around 1.3.mu.m. A DFB laser operating at 1.315.mu.m is used to provide an input signal. An output signal powers up to 20 dBm (100 mW) with a 28 dB Raman gain are attained, where the Nd:YAG pump power is 3.4 W. It is also shown experimentally that it is important to use optical filters to suppress feedback from the resonator, permitting high Raman gain and good signal quality.

• Korean Journal of Optics and Photonics
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• v.14 no.4
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• pp.406-412
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• 2003

We have developed a radio frequency excited slab waveguide $CO_2$ laser. The dimension of active volume is 2${\times}$40${\times}$400 mm. One concave and one convex mirror are used to make the unstable resonator of the positive branch. The radio frequency is 123 MHz and RF input power is varied from 100 to 900 W. The laser gas is set to a pressure of 10∼60 torr and the mixing ratio is $CO_2$:$N_2$:He=1:1:3. The laser output power of 70.7 W was obtained which corresponds to laser power to RF power conversion efficiency of 9.2%.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.11
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• pp.1215-1220
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• 2014

In this paper, a local oscillator for X-band radar system is designed and fabricated with GaAs MESFET. GaAs MESFET is good for microwave oscillators because of very low noise figure and high electron mobility. Oscillator design methods in this paper are used the characteristic of negative resistance of active component and impedance matching technique without RF resonator. So, oscillator is designed in compact size because space of RF resonator is reduced and can be applied MMIC technique. Designed oscillator has characteristic of the output power of 2.30 dBm and center frequency of 10.545GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.3
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• pp.262-268
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• 2010

In this paper, a high power active tunable bandpass filter made of dielectric resonators and varactor diodes is designed using the active capacitance circuit generating negative resistance for tuning cellular TX, RX band. An active capacitance circuit's series feedback circuit using GaAs HFET whose $P_{1dB}$ is 32 dBm is used for compensating the losses from the varactor diodes of the tunable bandpass filter. The tuning elements, the varactor diodes are used as the back-to-back configuration to achieve the high power performance, The designed active capacitance circuit improves the insertion loss characteristics. The designed 2-stage active tunable dielectric bandpass filter at cellular band can cover from 800 MHz to 900 MHz. The insertion losses at 836 MHz and 881.5 MHz with 25 MHz bandwidth are 0.48 dB and 0.39 dB, respectively. The $P_{1dB}$ of the designed bandpass filter at TX and RX band are measured as 19.5 dBm and 23 dBm, respectively.

• Journal of Digital Contents Society
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• v.10 no.2
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• pp.199-207
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• 2009

The Q-switching the shutter or the different optical science element puts in within the laser light resonator and the storehouse departs from the within the resonator it loses the mortar and the reversal distribution which when is sufficient creates from within the active medium, opens the shutter instantaneously and it is to do to be made to emit with the light where the energy which is accumulated within the resonator is strong very. Like this Q-switching of laser resonator--It decreases factor increasing suddenly to make. To method of Laser Q-switching mechanical switching methods, electro-optic switching methods and switching by saturable absorber methods, acousto-optic switching method etc. 4 kind are being used on a large scale. In these people the conversion which is electric in compliance with the effect which is electrooptics is widely being used the Q-switching pulse of short pulse width because being it will be able to create. Consequently, Pockel cell where it has the quality of electrooptics effect) the Q-it is become known that it is suitable it uses with switch. From the research which it sees FET and one-chip microprocessor where it is a switching element and pulse transfomer to plan and produce pockel cell Q-switch driving gears, pulse style Nd: It applied in YAG Laser system and it investigated and researched the operating characteristic of the Q-switch. Also, the Q-switch leads and Nd where it is output: YAG with forecast in compliance with a theoretical calculation it comes to buy laser beam side politics it compared and laser beam qualities which had become Q-switching it analyzed.