• Proceedings of the KIPE Conference
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• 1999.07a
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• pp.350-353
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• 1999

In this paper, a new simple control method for active power filter which can realized the complete compensation of the harmonic currents is proposed. In the proposed scheme, a compensating current reference generator employing lossless resonato implemented by a DSP(Digital Signal Processor) is introduced. Deadbeat control is employed to contro the active power filter. The switching pulse width based SVM(Space Vector Modulation) is adopted so that the current of active power filter is been exactly equal to its reference at the next sampling instant. To compensate the computation delay of digital controller, the prediction of current is achieved by the current observer with deadbeat response.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.874-877
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• 2001

SOI(Silicon-On-Insulator) technology is proposed as an alternative to bulk silicon for MEMS(Micro Electro Mechanical System) manufacturing. In this paper, we fabricated the SOI wafer with uniform active layer thickness by silicon direct bonding and mechanical polishing processes. Specially-designed electrostatic bonding system is introduced which is available for vacuum packaging and silicon-glass wafer bonding for SOG(Silicon On Glass) wafer. We demonstrated thermopile sensor and RF resonator using the SOI wafer, which has the merits of simple process and uniform membrane fabrication.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1039-1044
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• 2002

Film Bulk Acoustic Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents an MMIC compatible suspended FBAR using SOI micromachining. It is possible to make a single crystal silicon membrane using a SOI wafer In fabricating active devices, SOI wafer offers advantage which removes the substrate loss. FBAR was made on the 12㎛ silicon membrane. Electrode and Piezoelectric materials were deposited by RF magnetron sputter. The maximum resonance frequency of FBAR was shown at 2.5GHz range. The reflection loss, K$^2$$\_$eff/, Q$\_$serise/ and Q$\_$parallel/ in that frequency were 1.5dB, 2.29%, 220 and 160, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1224-1231
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• 2003

This paper reports on the air-gap type thin film bulk acoustic wave resonator(FBAR) using ultra thin wafer with thickness of 50$\mu\textrm{m}$. It was fabricated to realize a small size devices and integrated objects using MEMS technology for flexible microsystems. To reduce a error of experiment, MATLAB simulation was executed using material characteristic coefficient. Fabricated thin FBAR consisted of piezoelectric film sandwiched between metal electrodes. Used piezoelectric film was the aluminum nitride(AlN) and electrode was the molybdenum(Mo). Thin wafer was fabricated by wet etching and dry etching, and then handling wafer was used to prevent damage of FBAR. The series resonance frequency and the parallel frequency measured were 2.447㎓ and 2.487㎓, respectively. Active area is 100${\times}$100$\mu\textrm{m}$$^2$.Q-factor was 996.68 and K$^2$$\_$eff/ was 3.91％.

• Journal of the Semiconductor & Display Technology
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• v.16 no.1
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• pp.102-105
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• 2017

Currently, the size of the electronic device is in the nano area. In order to control the movements of these nanoscale devices, one should be able to understand the physical phenomena in the nano area. Recently, due to carbon nanotubes and mechanical outstanding electrical conductivity and mechanical characteristics of the carbon nanotubes and Graphene behaves to apply. Efforts have been active. There are various tubes with a radius of a in a compact mass in the form of a Multi walled carbon nanotubes in different between the radius. Van der Waals force can move smoothly without friction with each other by the nanoscale motor turning, using the properties, making. This is the lightest solids per unit area on the thickness is electrical atomic layer one of the substance and the electrical conductivity, the best material and mechanical characteristics are very much. Many studies because great is the ideal nanoelectromechanical device of material is being considered. In this study, electrical resonator for a new structure proposed and the nature and methodology would like to come up.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.28-35
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• 1993

The MESFET can be used as a three-terminal varactor by employing gate depletion capacitance Cg. In this paper, a novel VCDRO(voltage controlled dielecric resonator oscillator) is designed to apply VCDRO with this concept. The VCDRO produced 6.33dBm output power at a frequency of 11.058GHz and tunning bandwidth of 45MHz. The advantage of using the MESFET as a three-terminal varactor is to let the MESFET play both roles at the same time, thus simplifying the circuit configuration and fabrication. This finding demonstrates the potential of using both real and imaginary parts of the equivalent impedance of the active device.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.12
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• pp.586-591
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• 2003

We have developed the radio frequency excited slab waveguide $CO_2$ laser, The dimension of active area is $2{\times}40{\times}400$ mm to get a laser gain. Two pieces of concave mirror are used to make the unstable resonator of negative branch. The radio frequency is 123 MHz and RF input power is from 100 to 900 W. The laser gas is set to a pressure of 10 ∼ 60 torr and the mixing ration is $CO_2$:$N_2$:He=1:1:3. The laser output power of 50.9 W was obtained with laser power to RF power efficiency of 6.5 %.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.377-382
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• 2000

Film bulk acoustic resonator (FBAR) using AIN reactively sputtered at room temperature was fabricated. The FBAR is composed of a piezoelectric aluminium nitride thin film, top electrode of Al and bottom electrode of Au connected by a short (200${\mu}{\textrm}{m}$) transmission line on both sides and reflector layers of SiO$_2$- W Pair. The active areas of Al and Au were patterned using 150${\mu}{\textrm}{m}$ diameter shadow mask. The series resonance frequency (fs) and the parallel resonance frequency (fp) were measured at 1.976 GHz and 2.005 GHz, respectively. The minimum insertion loss and return loss were 6.1 dB and 37.19 dB, and the quality factor (Q) was 4261.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.424-428
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• 2003

We have developed the RF discharge Excited slab Waveguide $CO_2$ laser and measured the output power. We make used of concave and concave mirror, concave and convex mirror that negative branch and positive branch unstable resonator, respectively. The resonator active dimension is 2$\times$40$\times$400 mm and ratio frequency is 123 MHz. The gas mixing ratio is $CO_2$: $N_2$ : He=1 : 1 : 3. The pressure in resonator is from 10 to 60 torr and RF input power increased from 100 to 900 W. so that We obtained laser maximum output power of negative branch and positive branch resonator 50.9 W and 70.8 W and efficiency is 6.5 % and 9.2 %, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.8
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• pp.748-753
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• 2002

In this paper, a new topology of a active capacitor is proposed in order to apply the resonator in the design of RF active bandpass filters. Through the noise analysis of the active capacitor, the optimized low noise design process is also presented, Due to the low noise performance of the proposed active bandpass filter, it can be used in the RF front-end of the receivers. In designed 2-stage active bandpass filter at 1.9 GHz shows insertion loss of 0 dB, noise figure of 2.6 dB, and OIP3 of 8 dBm.