• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.4
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• pp.886-893
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• 2004

In this paper, active resonator oscillator using active band pass filter with gain, active resonator with negative resistance using transistor(agilent ATF-34143) is designed and fabricated. Proposed active resonator oscillator for local oscillator in ISM band(5.8GHz) is designed with 5.5 GHz oscillation frequency. Designed active resonator oscillator implemented on the substrate which has the relative dielectric constant of 3.38, the height of 0.508mm, and metal thickness of 0.018mm. Active resonator oscillators using active band pass filter with gain show the oscillation frequency of 5.6GHz with the output power of -2dBm and phase noise of -81dBc/Hz at the offset frequency of 100kHz. Active resonator oscillators active resonator with negative resistance show the oscillation frequency of 5.6, 5.8GHz with the output power of -4dBm and phase noise of -91dBc/Hz at the offset frequency of 100kHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.8
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• pp.1591-1597
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• 2003

In this paper, Active Resonator Oscillator using active inductor and active capacitor with HEMTs(agilent ATF­34143) is designed and fabricated. Active inductor with ­25$\Omega$ and 2.4nH in 5.5GHz frequency band and Active capacitor with ­14$\Omega$ and 0.35pF is designed. Active Resonator Oscillator for LO in ISM band(5.8GHz) is designed with active inductor and active capacitor. Active Resonator Oscillator has been simulated by Agilent ADS 2002C. Active Resonator oscillator implemented on the substrate which has the relative dielectric constant of 3.38, the height of 0.508mm, and metal thickness of 0.018mm. This Active Resonator Oscillator shows the oscillation frequency of 5.68GHz with the output power of ­3.6㏈m and phase noise of ­81㏈c/Hz at the offset frequency of 100KHz.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.10
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• pp.1814-1819
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• 2007

A new active resonator using defected ground structure with islands (DGSI) is proposed. The proposed resonator is composed of the conventional microstrip line with DGSI and negative resistance of active devices. The negative resistance part is realized by field effect transistor (FET) series feedback circuits. The characteristic of the proposed resonator with DGSI is improved by combining the negative resistance part with the parallel microstrip line structure with islands, where the electric field is formed the most strongly. The measured improvement of the proposed active resonator with DGSI are 4.55dB and 0.32dB in S21 and S22, respectively, at the resonant frequency whorl it is compared to the existing passive resonator having DGSI only.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.3
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• pp.311-320
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• 2008

In this paper, a new variable active inductor using a conventional grounded active inductor with feedback variable LC-resonator is proposed. The grounded active inductor is realized by the gyrator-C topology and the variable LC-resonator is realized by the low-Q spiral inductor and varactor. This variable LC-resonator can compensate the degradation of Q-factor due to parasitic capacitance of a transistor, and the frequency range with high Q-factor is adjustable by resonance frequency adjustment of LC-resonator. The fabricated variable active inductor with Magnachip $0.18{\mu}m$ CMOS process shows that high-Q frequency range can be adjusted according to varactor control voltage from 4.66 GHz to 5.45 GHz and Q-factor is higher than 50 in the operating frequency ranges. The measured inductance at 4.9GHz can be controlled from 4.12 nH to 5.97 nH by control voltage.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.37 no.11
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• pp.1131-1139
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• 2009

Combustion Instabilities are caused by a coupling between acoustic waves and unsteady heat release. They can be eliminated using passive controller such as a Helmholtz resonator. But, Helmholtz resonator is normally only effective over a narrow frequency range. In this work, Helmholtz resonator is applied for reducing the combustion oscillations and we vary the Helmholtz resonator volume using piston in oder to tune in the wide range of operating conditions. As the result, it is found that the dominant combustion oscillations can be largely reduced by optimizing the size of resonator volume. And, interesting relation for phase difference of dynamic pressure both combustor and the helmholtz resonator are presented in this paper. Also, we investigate semi-active control using Helmholtz equation and phase difference.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.2
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• pp.8-17
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• 1992

In this paper a push-push oscillator using DR (dielectric resonator) at K-band is designed and constructed. Two identical oscillators are arranged in a push-push configuration that has the frequency of oscillator that is twice frequency each oscillator. A dielectric resonator is placed at the input of an active two-port device(FET) yielding a stable frequency source. The oscillators realized with this technique exhibit excellent spectral purity and cancellation of fundamental frequency.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2014.04a
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• pp.569-570
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• 2014

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2013.10a
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• pp.370-371
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• 2013

• ETRI Journal
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• v.38 no.2
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• pp.217-226
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• 2016

We propose an architecture that reduces the power consumption and active area of such a modulator through a reduction in the number of active components and a simplification of the topology. The proposed architecture reduces the power consumption and active area by reducing the number of active components and simplifying the modulator topology. A novel second-order loop filter that uses a single operational amplifier resonator reduces the number of active elements and enhances the controllability of the transfer function. A trapezoidal-shape half-delayed return-to-zero feedback DAC eliminates the loop-delay compensation circuitry and improves pulse-delay sensitivity. These simple features of the modulator allow higher frequency operation and more design flexibility. Implemented in a 130 nm CMOS technology, the prototype modulator occupies an active area of $0.098mm^2$ and consumes 5.23 mW power from a 1.2 V supply. It achieves a dynamic range of 62 dB and a peak SNDR of 60.95 dB over a 15 MHz signal bandwidth with a sampling frequency of 780 MHz. The figure-of-merit of the modulator is 191 fJ/conversion-step.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.345-348
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• 2002

A complementary VHF CMOS active inductor is described. The proposed circuit employs 'p-type' and 'n-type' active inductor to obtain enlarged signal handling ability. Under the same inductance, Q value, and power consumption, the proposed circuit shows more than 12-㏈ improvement in dynamic range while maintaining high-frequency operation. Further enhancement is obtained by using a fully differential floating inductor structure. A 1-㎓ 4$\^$th/-order coupled-resonator filter is designed to demonstrate the potential of the proposed active inductor.