• The Bulletin of The Korean Astronomical Society
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• v.37 no.1
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• pp.92.2-92.2
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• 2012

Previous simulations posed a problem that they used reduced ion to electron mass ratios to save computation time. It was assumed that ion and electron dynamics are sufficiently separated, but it was not clearly verified. In this study, we examine the effect of ion to electron mass ratios on the generation of ion holes by ion beam driven instability. Ion holes are generated via electron holes in an applied electric field with the given initial condition. First, the ion acoustic instability is excited and nonlinearly develops. After the ion acoustic instability nonlinearly develops, the ion two-stream instability is excited and develops into ion holes. This implies that the previously suggested ion beam driven instability is strongly affected by the coupling between ions and electrons and the ion to electron mass ratio is important on the development of the instability. The energy transition and detail variation is different as reduced mass ratio under the same observation value based on FAST satellite. Although, the parameters are rescaled by conserving the kinetic energy to obtain the proper results, the nonlinear evolution is not perfectly identical.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.4
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• pp.241-246
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• 1999

In this study, the piezoelectric ceramics PZT powders were synthesized by Wet-Dry combination method. And the flexible 1-3-0 type composites were favricated with piezoceramic PZT and Eccogel polymer matrix embedded 3rd phase. Dielectric constant of 1-3-0 type composites was lower than that of single phase PZT ceramics. Thickness mode coupling factor $k_t$ which was comparable with single phase PZT ceramics, and Mechanical Quality factor $Q_m$ were about 0.65 and 6 respectively. These composites are considered as a good candidates for broad-band type transducer applications. The acoustic impedance for 1-3-0 type composites was lower than that of single phase PZT ceramics. Therefore, these composites would be better used for hydrophone applications.

• Journal of the Korea Institute of Military Science and Technology
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• v.12 no.1
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• pp.106-113
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• 2009

This paper presents a surface acoustic wave(SAW) micro-electro-mechanical-systems(MEMS) interdigital transducer (IDT) gyroscope with 80MHz central frequency on a $128^{\circ}\;YX\;LiNbO_3$, which is consisted of a two-port SAW resonator, metallic dots and dual delay lines for the sensor and reference oscillators. Reason for using two delay line oscillators is to extract the gyroscope effect by comparing the resonant frequencies between two oscillators and to compensate the temperature effect. Based on the coupling of modes(COM) simulation, an 80MHz two ports SAW resonator and dual delay line were fabricated and characterized by the network analyzer. Obtained sensitivity was $109Hz/deg{\cdot}s^{-1}$ in the angular rate range of $0{\sim}1000deg/s$. Good Linearity and superior directivity were observed.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.2
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• pp.390-396
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• 2010

An 80MHz surface acoustic wave (SAW)-based gyroscope utilizing a progressive wave was developed on a piezoelectric substrate. The developed sensor consists of two SAW oscillators in which one is used for sensing element and has metallic dots in the cavity between input and output IDTs. The other is used for a reference element. Coupling of mode (COM) modeling was conducted to determine the optimal device parameters prior to fabrication. According to the simulation results, the device was fabricated and then measured on a rate table. When the device was subjected to an angular rotation, oscillation frequency differences between the two oscillators were observed because of the Coriolis force acting on the metallic dots. Depending on the angular rate, the difference of the oscillation frequency was modulated. The obtained sensitivity was approximately 52.35 Hz/deg.s within the angular rate range of 0~1000 deg/s. The performances of devices with three IDT structures for two kinds of piezoelectric substrates were characterized. Good thermal stability was also observed during the evaluation process.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2017.05a
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• pp.68-77
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• 2017

High-frequency combustion instability results from a feedback coupling between the unsteady heat release rate and the acoustic waves formed resonantly in the combustion chamber. It can be modeled as thermoacoustic problems with various degrees of the assumptions and simplifications. This paper presents numerical analysis of self-excited combustion instabilities in a variable-length lean-premixed combustor and designs of passive control devices such as baffle and acoustic resonators in a framework of 3-D FEM Helmholtz solver. Nonlinear behaviors such as steep-fronted shock waves and a finite amplitude limit cycle are also investigated with a compressible flow simulation technique.

• 유체기계공업학회:학술대회논문집
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• 1999.12a
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• pp.81-89
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• 1999

The major source of noise in the process of transporting liquids is related to the cavitation phenomenon. The control valve noise is mostly dominated by bubble dynamics under cavitating conditions. In this investigation, an orifice configuration is set-up to correlate its flow-field and acoustic signatures with those from a control valve device. The performance and noise characteristics form the orifice configuration in anechoic surroundings were measured to reveal the noise sources depending on pressure differences across the orifice configuration. The sound powers from the orifice configuration are effectively normalized using proposed scaling parameters. Flow-excited dynamic systems for which there is no strong coupling between the flow and the system response can be described using a linear source-filter model. On this assumption, the normalized sound powers can be decomposed of noise source function and a response function. To find noise sources, pressure spectra measured over a range of pressure differences are transformed into the product of two non-dimensional frequency function : $P_{ss}(He,f_{ca},x/D) = F(f_{ca})\;G(He,x/D)$. This scheme of finding noise sources is shown to be applicable to the cavitation noise from the control valve effectively Two kinds of cavitating modes based on our experimental data are found and discussed.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.5
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• pp.502-507
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• 1992

To improve temperature stability, 0.05Pb(SnS11/2TSbS11/2T)OS13T-0.35PbTiOS13T-0.60PbZrOS13T+0.4[wt%]MnO S12T piezoelectic ceramics were manufactured with the addition of CrS12TOS13T by Hot Press method. And the SAW delay line was fabricated and effects of CrS12TOS13T to the propagation characteristics of SAW was investigated, and the SAW filter was fabricated on C4 specimen added by 0.2[wt%] CrS12TOS13T whose propagation characteriatics of surface acoustic wave were the bast and its frequency characteristics was investigated. Electromechancal coupling factor(kS1sTS02T) was 3.11[%] and its temperature coefficient of the center frequency(CS1foT)was -21.27[ppm/$^{\circ}C$] in C4. The 31[MHz]]SAW IF filter of C4 scarcely had diffraction phenomena and therefore it was proper.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.3
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• pp.594-599
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• 2011

A SAW strain sensor based on Shear Horizontal wave with an 92 MHz central frequency was developed. It consists of SAW sensor, PCB substrate and bonding material (Loctite 401). External force applied to PCB substrate bonded to a piezoelectric substrate induces strain at the substrate surface, which causes changes in the elastic constant and density of the substrate and hence the propagation velocity of the SAW. The change in the velocity of the SAW result in a frequency shift of the sensor and by measuring a frequency shift, we can extract the strain induced by the external force. The $41^{\circ}$ YX $LiNbO_3$ was used because it has a Leaky shear horizontal(SH) wave propagation mode and a high electromechanical coupling coefficient ($K^2$=17.2%). And to compare with Rayleigh wave mode, $128^{\circ}$ YX $LiNbO_3$ was used. And to make a stable and low insert loss, Split IDT structure was used. The obtained sensitivity and linearity of the SAW strain sensor in the case of Split IDT were measured to be 17.2 kHz / % and 0.99, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.141-144
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• 2003

This study proposes ZnO thin film as a piezoelectric material for SAW (surface acoustic wave) filter. The ZnO thin film with thickness $2.6{\mu}m$ was deposited (0001)-oriented sapphire by RF magnetron sputtering technique. IDTs (inter-digital transducers) electrodes were patterned upon SAW filter mask with solid finger structure unapodized using lift-off method on ZnO piezoelectric thin film. SAW propagation velocity was measured with the center frequency by HP 8753C network analyzer. A fabricated ZnO SAW filter exhibited a high propagation velocity of 5433 $^m/s$ and relatively insertion loss of -53.391dB at $\lambda=80{\mu}m$. The side-lobe attenuation of the center frequency was about 17dB. When the wavelength was $80{\mu}m$ $(\lambda/4=20{\mu}m)$, the center frequency was 67.907 MHz. $k^2$ (electromechanical coupling coefficient) was 15.84 %.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.539-546
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• 2003

The GaN/sapphire layered structure is a potential candidate for high frequency devices due to high acoustic velocity of sapphire. Generally, the GaN thin films are epitaxially grown on c, a, and r-plane sapphire substrates. In this study, wave equations of GaN/sapphire structure were calculated according to crystallographic relationship between GaN layer and sapphire substrate. On each plane, the shear velocity was changed by the kH of GaN layer and propagation direction on sapphire substrate. We found electromechanical coupling constant of r-plane was better than the others. As a result, elastic stiffness and electromechanical coupling constant of materials are affected by a cut and an orientation of substrate. GaN/r-plane sapphire structure is more advantageous for high frequency SAW devices.