• 한국세라믹학회지
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• 제38권11호
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• pp.980-986
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• 2001

5.2GHz 중심 주파수를 갖는 Bragg reflector형 FBAR를 제작하여 주파수 응답 특성을 측정하고, 공진기 구조에서 각 층의 탄성 손실(acoustic loss)을 고려한 주파수 응답의 수치적 계산을 통해서 그 특성을 분석하였다. W과 $SiO_2$쌍을 선택하여 RF sputtering법으로 총 9층의 Bragg reflector를 제작하였고, 공진기의 압전층으로 pulsed dc 전원에 의한 sputtering법으로 AlN과 Al 전극을 증착하여 제작하였다. 제작된 공진기의 반사손실( $S_{11}$)은 중심주파수 5.38GHz에서 12dB이었고 직렬 공진 주파수( $f_{s}$)는 5.376GHz, 병렬 공진 주파수 ( $f_{p}$)는 5.3865GHz로 관찰되었다. 공진기의 성능지수인 유효 전기기계결합계수( $K_{ef{f^2}}$)값이 약 0.48%, 품질계수 ( $Q_{s}$) 값이 411이었다. 수치적으로 계산된 주파수 응답 특성으로부터 AlN 박막의 acoustic 상수들과 Bragg reflector의 반사계수를 도출한 결과 AlN 박막의 material acoustic impedance와 wave velocity는 AlN 고유의 값보다 감소되었으며, AlN 박막의 전기기계 결합계수( $K^2$)값은 c축 배향성 저하에 의해 매우 작은 값(0.49%)을 가졌다. 주파수 대역에서 Bragg reflector의 반사계수는 약 0.99966으로 계산되었으며 약 2.5 GHz에서 9.5 GHz까지의 넓은 반사대역을 나타내었다.다.었다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 추계종합학술대회
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• pp.143-147
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• 2002

본 논문에서는 FBAR소자에서 중요한 역할을 하는 Reflector의 최적 증착조건을 RF/DC마그네트론 스퍼터링을 이용하여 조사하였다. Reflector를 구성하는 SiO$_2$와 W박막의 증착속도, 결정성, 표면거칠기 둥을 다양한 증착조건에서 관찰한 결과 빠른 증착속도를 보이면서 치밀하고 결정성이 좋은 박막을 얻을 수 있는 조건을 찾을 수 있었고, 이 조건으로 5층의 Acoustic Bragg Reflector 구조를 제작하였다.

• Journal of Biosystems Engineering
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• 제34권4호
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• pp.260-268
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• 2009

As a basic study to develop a high sensitive biosensor using film bulk acoustic resonator, the mathematical model for analyzing the resonance characteristics of bulk acoustic resonator with acoustic Bragg reflectors was investigated. The simulation results due to the number of acoustic Bragg reflectors with low and high acoustic impedance materials were compared with the experimental results for 1, 2.25 and 5 MHz of PZT based bulk acoustic resonators with various acoustic Bragg reflectors. At the fabricated bulk acoustic resonator with an odd number of acoustic Bragg reflectors, low and high acoustic impedance materials in sequence under the bottom electrode showed better resonance characteristics than even number of acoustic Bragg reflectors. The changes of resonance frequencies due to the increase of number of acoustic Bragg reflectors by simulation and experiment, respectively showed approximately similar tendency but some differences in input impedance between the experiment and simulation were found. The derived mathematical model for describing the resonance characteristics of the bulk acoustic resonator with acoustic Bragg reflector will be available for analyzing the design parameters for development of biosensor using bulk acoustic resonator.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2008년도 춘계종합학술대회 A
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• pp.59-62
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• 2008

In this paper, we study ZnO-based a film bulk acoustic resonator (FBAR) using a multi-layered Bragg reflector. We insert chromium adhesion layers of 0.03 mm-thick to the Bragg reflector and improve the performance using thermal treatments. At operating frequency about 2.5 GHz, excellent resonance characteristics are observed in terms of good return loss and high quality factor.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2005년도 춘계종합학술대회
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• pp.371-375
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• 2005

In this paper, the resonance characteristics of ZnO-based FBAR devices are compared. Several FBAR device samples were fabricated by using three different annealing methods while one sample remained non-annealed as a reference for comparison. Resonance characteristics could be significantly improved by both Bragg reflector-annealing and/or post-annealing steps. Especially, the use of two-step annealings resulted in most desirable resonance characteristic improvement compared with the Bragg reflector-annealing or post-annealing step alone.

• Journal of information and communication convergence engineering
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• 제3권1호
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• pp.23-27
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• 2005

In this paper, the effects of various annealing conditions on the resonance characteristics of ZnO-based FBAR devices are compared. Several FBAR device samples were fabricated by using three different annealing methods while one sample remained non-annealed as a reference for comparison. Return loss ($S_11$) could be significantly improved by both Bragg reflector-annealing and/or post-annealing. Especially, the use of the combined annealings resulted in most desirable resonance improvement compared with the Bragg reflector-annealing or post-annealing method alone.

• Journal of information and communication convergence engineering
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• 제3권3호
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• pp.137-141
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• 2005

The paper presents some methods to improve characteristics of film bulk acoustic resonator (FBAR) devices. The FBAR devices were fabricated on Bragg reflectors. Thermal treatments were done by sintering and/or annealing processes. The measurement showed a considerable improvement of return loss $(S_{11})$ and quality factor $(Q_{s/p}).$ These thermal treatment techniques seem very promising for enhancing FBAR resonance performance.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2008년도 추계종합학술대회 B
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• pp.61-65
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• 2008

In this paper, we studied a ZnO-based film bulk acoustic resonator (FBAR) device fabricated on a specially designed multi-layerd Bragg reflector part. Very thin chromium adhesion layers (0,03um thick) were additionally deposited to improve the quality of the Bragg reflector and some thermal treatments were performed to improve the resonant characteristics of the device. At the operating frequency of ${\sim}2.7GHz$, excellent resonant characteristics were observed in terms of return loss and quality factor, and effective electromechanical coupling coefficient. These findings are expected to be highly promising and effective for improving the performance of the FBAR devices at high frequency.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.377-382
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• 2000

Film bulk acoustic resonator (FBAR) using AIN reactively sputtered at room temperature was fabricated. The FBAR is composed of a piezoelectric aluminium nitride thin film, top electrode of Al and bottom electrode of Au connected by a short (200${\mu}{\textrm}{m}$) transmission line on both sides and reflector layers of SiO$_2$- W Pair. The active areas of Al and Au were patterned using 150${\mu}{\textrm}{m}$ diameter shadow mask. The series resonance frequency (fs) and the parallel resonance frequency (fp) were measured at 1.976 GHz and 2.005 GHz, respectively. The minimum insertion loss and return loss were 6.1 dB and 37.19 dB, and the quality factor (Q) was 4261.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.377-378
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• 2005

In this study, $SiO_2$ thin film was deposited on variable conditions of the RF power and working pressure by RF magnetron sputtering to apply to the Bragg reflector of the SMR type FBAR device. A crystal orientation and microstructure of $SiO_2$ thin film was studied by using the XRD, AFM and SEM. The best condition was obtained through analyzing the structural characteristics of thin film. Finally, FBAR device was fabricated with applying the best condition of $SiO_2$ thin film and the resonant characteristics was investigated by network analyzer to verify application possibility as a efficient device.