• 대한치과보철학회지
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• 제23권1호
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• pp.83-95
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• 1985

The purpose of this study was to evaluate microstructures on the etched surface of 11 base metal alloys for dental restorations and to observe the relationship between the etching pattern and beryllium. For this purpose, the following experiments were done; 11 base metal alloys were etched in (1) 10% $H_2SO_4$, (2) 10% $H_2SO_4$, 9 parts+methanol 1 part (3) Conc. $HNO_3$ 25%+glacial acetic acid 25%+$H_2O$ 50% (4) Conc. $HNO_3$ 5% (5) 2% glacial acetic acid added to Conc. $HNO_3$ 1% solution, with their etching conditions varied. Etched surface of alloys were examined under the scanning electron microscope. Results were as follows; 1. Almost all of Ni-Cr-Be alloys showed gooed etchd surface in $H_2SO_4$, solution, while some of those alloys which contains no beryllium showed good etched surface in $HNO_3$ solution. 2. Main components of etching solution can vary etching pattern of alloys. 3. Gamma prime phase relief, which can be found in all Ni-Cr-Be alloys, can't be found in any alloy that contains no beryllium.

• 한국전기전자재료학회논문지
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• 제29권8호
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• pp.455-460
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• 2016

A textured front surface is required in high efficiency silicon solar cells to reduce reflectance and to improve light trapping. Wet etching with alkaline solution is usually applied for mono crystalline silicon solar cells. However, alkali texturing method is not appropriate for multi-crystalline silicon wafers due to grain boundary of random crystallographic orientation. Accordingly, acid texturing method is generally used for multi-crystalline silicon wafers to reduce the surface reflectance. To reduce reflectivity of multi-crystalline silicon wafers, double texturing method with combination of acid and reactive ion etching is an attractive technical solution. In this paper, we have studied to optimize RIE condition by different RF power condition (100, 150, 200, 250, 300 W).

• 한국표면공학회지
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• 제26권3호
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• pp.149-157
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• 1993

In the study of TAB(Tape Automated Bonding)technologies, Cu-Cr sputtered seed layer has been used to improve the adhesion between Polyimide and Cu film and electrical properties. But the Cu electrodeposit on Cu-Cr film had poor adhesion or powder-like form due to the surface Cr oxides on the Cu-Cr film. By means of activating the Cu-Cr film with the oxalic acid and phosphoric acid, the Cu film with the improved adhesion could be coated on the Cu-Cr sputtered film in CuSO4 solution. The etching rate was compared with increasing the Cr content of the sputtered Cu-Cr film, and anodic polarization curve in FeCl3 solution was investigated. With increasing the Cr content, the etching rate was reduced. The clean etching cross section could be obtained with increasing the concentration of FeCl3 solution. But above the 13 w/o Cr content, Cu-Cr sputtered film could not bed etched cleanly only with FeCl3 solution and additives were needed.

• 대한소아치과학회지
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• 제30권1호
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• pp.143-152
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• 2003

본 연구는 자가부식 접착제의 치질로의 침투와 레진 tag 형성을 알아보고 부가적인 산부식이 레진 tag 형성에 미치는 효과를 관찰하기 위하여 계획되었다. 3종의 자가부식 접착제(SE bond, AQ bond and L Pop)와 one bottle adhesive(Single bond)를 사용하였고 발거한 구치로 교합면 법랑질과 상아질 시편을 제작하였으며 각 군당 5개씩 네 개의 군으로 나눈 총 20개의 시편을 양분하여 각각 접착제를 적용하기 전 35% 인산으로 산부식하거나 산부식처리하지 않았으며 이후 레진을 적용시키고 중합하였다. 시편은 Silverstone microtome으로 절단한 후 HCl 용액과 NaOCl 용액으로 처리하고 건조시킨 후 이온으로 피복하였으며 주사전자현미경으로 관찰하여 다음과 같은 결과를 얻었다. 1. 부가적 산부식 처리한 상아질은 모든 자가부식 접착제군에서 산부식하지 않은 상아질보다 resin tag의 길이와 두께가 증가하는 것이 관찰되었다. 2. 법랑질에서는 L Pop을 제외하고 부가적 산부식한 군에서 레진 tag의 두께가 산부식하지 않은 군보다 컸고 보다 명확한 부식양상을 관찰할 수 있었다. L Pop에서는 부식법랑질과 비부식법랑질간의 차이가 없었다. 본 연구의 결과는 자가부식형 접착제가 법랑질을 부식시키지 않고 상아세관으로 침투하는 정도가 산부식군에 미치지 못하다는 것을 의미한다. 이와 관련하여 접착강도와 미세누출 및 레진 tag 형태에 대한 부가적 연구가 필요할 것이다.

• Restorative Dentistry and Endodontics
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• 제32권4호
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• pp.365-376
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• 2007

본 연구의 목적은 3종의 전체산부식 상아질 접착 시스템에서 적절한 산부식 시간과 접착제의 침투 능력에 대해 규명하고자 하였다. 우식이 없는 54개의 제3대구치의 상아질 표면을 5, 15, 25초 동안 산부식하고 산부식형 접착제 3종 (Scotchbond multipurpose, Single Bond, One Step) 을 도포한 후 복합레진을 충전하였다. 각 시편은 0회 (대조군) 또는 2000회 열순환 ($5^{\circ}C\;-\;55^{\circ}C$) (실험군) 후 미세인장강도를 측정하고 파단면을 관찰하여 다음과 같은 결론을 얻었다. 1. 실험군은 대조군에 비하여 결합강도가 감소하였으며, 특히 25초 산부식한 SM 및 SB군에서는 통계학적 유의차를 나타내었다. 2. 열순환 처리한 SM군과 SB군의 경우, 25초 간 산부식한 군이 5초 간 산부식한 군과 15초 간 산부식한 군에 비해 유의성 있게 낮은 결합강도를 나타냈다 (p < 0.05). 3. OS군의 경우, 산부식 시간 및 열순환 여부에 따른 유의성 있는 차이가 나타나지 않았다 (p > 0.05). 상아질 접착의 내구성은 접착제의 용매와 산부식 시간에 의해 영향을 받으며 특히, ethanol-based adhesive를 사용할 때 과도한 산부식은 유의해야 한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.220-220
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• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

• 대한치과보철학회지
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• 제38권2호
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• pp.255-263
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• 2000

The purpose of this study was to compare the microleakage of the composite resin cores according to surface treatment, dentin bonding agents, and thermocycling. For this study, 120 extracted premolar teeth were used. Flat occlusal surfaces were prepared with diamond disk, and treated with air-abrasion, acid-etching, combination. The composite resin core was built with Z-100 after application of Scotchbond Multi-Purpose and All-Bond 2. Prepared specimens were thermocycled for 2,000 cycles. Specimens were immersed in 1% methylene blue solution for 24hours at $37^{\circ}C$. The microleakage was measured with a inverted metallurgical microscope(BHS313, Olympus, Japan). The following conclusions were drawn from this study: 1. The microleakages in the groups treated with air-abrasion and with acid etching were greater than that of the groups treated with combination method before thermocycling(p<0.05), the microleakages of the groups treated with air-abrasion were greater than that of the groups treated with acid-etching and combination method after thermocycling(p<0.05) 2. There were no significant difference between groups using Scotchbond Multi-Purpose and the groups using All-Bond 2. 3. Thermocycling didn't affect the change of microleakage in all cases.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.243-243
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• 2010

This paper two different etching, HF : HNO3 :DI and RIE were used for etching in multi-crystalline Silicon(Mc-Si) solar cell fabrication. The wafers etched in RIE texture showed low reflectance compared to the wafers etched in Acid soultion after SiNx deposition. In light current-voltage results, the cells etched in RIE texture exhibited higher short circuit current and open circuit voltage than those of the cells etched in acid solution. We have obtained 15.1% conversion efficiency in large area($156cm^2$) Multi-Si solar cells etched in RIE texture.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.401-401
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• 2011

In this work, we deposited Al2O3doped ZnO (AZO) thin films by direct current (DC) magnetron sputtering method with a $40^{\circ}$ tilted target, for application in the front layer of thin film solar cell. Wet chemical etching behavior of AZO films was also investigated. In order to optimize textured AZO films, oxalic acid ($C_2H_2O_4$)has been used as wet etchant of AZO film. In this experiment we used 0.001% concentration of oxalic acid various etching time, that showed an anisotropy in etching texture of AZO films. Electrical resistivity, Hall mobility and carrier concentration measurements are performed by using the Hall measurement, that are $6{\times}10^{-4}{\Omega}cm$, $20{\sim}25cm^2/V-s$ and $4{\sim}6{\times}10^{20}$, respectively.

• 공업화학
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• 제27권1호
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• pp.101-109
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• 2016

기존의 불산을 대체할 수 있는 평판디스플레이용 유리의 식각용액을 개발하고자 진행하였다. 본 연구과정을 통해 제안된 불산 대체 유리 식각용액은 산성불화암모늄 18~19 wt%, 황산 24~25 wt%, 물 45~46 wt%, 황산염 4~5 wt%, 규불화염 7~8 wt%로 구성되며, 사용된 식각용액의 재사용 시 보충용액으로서 해당조성의 식각용액을 전체의 5% 되게 보충함으로서 효과적으로 지속적으로 재사용이 가능하다. 개발된 식각용액은 $30^{\circ}C$에서 $5{\mu}m/min$ 이상의 식각속도를 나타내며, 반복 재사용 시에도 초기 식각액 전체 질량의 5% 추가로 보충함으로서 식각속도는 $0.1{\mu}m/min$ 이하로 편차로 식각속도가 안정적으로 유지되었다. 이 식각공정을 통해 얻어진 평판디스플레이용의 유리의 표면 상태는 Pin hole, Dimple 등이 발견되지 않는 양호한 품질을 나타내었다.