• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.4
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• pp.785-792
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• 2012

In this paper, a current-voltage characteristics of n-channel junctionless and inversion mode(IM) MuGFET, and p-channel junctionless and accumulation mode(AM) MuGFET has been measured and analyzed for the application in high speed and low power switching devices. From the variation of the threshold voltage and the saturation drain current with the substrate bias voltages, their variations in IM devices are larger than junctionless devices for n-channel devices, but their variations in junctioness devices are larger than AM devices for p-channel devices. The variations of transconductance with substrate biases are more significant in p-channel devices than n-channel devices. From the characteristics of subthreshold swing, it was observed that the S value is almost independent on the substrate biases in n-channel devices and p-channel junctionless devices but it is increased with the increase of the substrate biases in p-channel AM devices. For the application in high speed and low power switching devices using the substrate biases, IM device is better than junctionless devices for n-channel devices and junctionless device is better than AM devices for p-channel devices.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.8
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• pp.1885-1890
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• 2013

In this paper, the electrical properties of nanoscale junctionless p-channel MuGFET at cryogenic temperature have been analyzed experimentally. The experiment was performed using a cryogenic probe station which uses the liquid Helium. It has been observed that the drain current oscillation at low drain voltage and cryogenic temperature was more pronounced in junctionless transistor than in accumulation mode transistor. The reason for more marked oscillation is due to the smaller electrical cross section area of the inversion channel which is formed at the center of silicon film in junctionless transistor. It was also observed that the drain current and maximum transconductance were increased as the measurement temperature increased. This is resulted from the increase of hole mobility and the decrease of the threshold voltage as the measurement temperature increases. The drain current oscillation due to the quantum effects can be occurred up to the room temperature when the device size scales down to the nanometer level.