• Title/Summary/Keyword: Accumulation layer

Search Result 249, Processing Time 0.03 seconds

Copper Phthalocyanine Field-effect Transistor Analysis using an Maxwell-wagner Model

  • Lee, Ho-Shik;Yang, Seung-Ho;Park, Yong-Pil;Lim, Eun-Ju;Iwamoto, Mitsumasa
    • Transactions on Electrical and Electronic Materials
    • /
    • v.8 no.3
    • /
    • pp.139-142
    • /
    • 2007
  • Organic field-effect transistor (FET) based on a copper Phthalocyanine (CuPc) material as an active layer and a $SiO_2$ as a gate insulator were fabricated and analyzed. We measured the typical FET characteristics of CuPc in air. The electrical characteristics of the CuPc FET device were analyzed by a Maxwell-Wagner model. The Maxwell-Wagner model employed in analyzing double-layer dielectric system was helpful to explain the C-V and I-V characteristics of the FET device. In order to further clarity the channel formation of the CuPc FET, optical second harmonic generation (SHG) measurement was also employed. Interestingly, SHG modulation was not observed for the CuPc FET. This result indicates that the accumulation of charge from bulk CuPc makes a significant contribution.

Damage propagation in CFRP laminates subjected to low velocity impact and static indentation

  • Aoki, Yuichiro;Suemasu, Hiroshi;Ishikawa, Takashi
    • Advanced Composite Materials
    • /
    • v.16 no.1
    • /
    • pp.45-61
    • /
    • 2007
  • This paper describes a damage accumulation mechanism in cross-ply CFRP laminates $[0_2/90_2]_{2S}$ subjected to out-of-plane loading. Drop-weight impact and static indentation tests were carried out, and induced damage was observed by ultrasonic C-scan and an optical microscope. Both tests gave essentially the same results for damage modes, sizes, and load-deformation history. First, a crack occurred in the bottom $0^{\circ}$ layer accompanying some delamination along the crack caused by bending stress. Then, transverse cracks occurred in the middle $90^{\circ}$ layer with decreasing contact force between the specimen and the indenter. Measured local strains near the impact point showed that the stress state changed from a bending dominant state to an in-plane tensile dominant state. A cohesive interface element was used to simulate the propagation of multiple delaminations and transverse cracks under static indentation. Two types of analytical models are considered, one with multiple delaminations and the other with both multiple delaminations and transverse cracks. The damage obtained for the model with only multiple delaminations was quite different from that obtained from the experiment. However, the results obtained from the model with both delaminations and transverse cracks well explain the characteristics of the damage obtained in the experiment. The existence of the transverse cracks is essential to form the characteristic impact damage.

Wear Progress Model by Impact Fretting in Steam Generator Tube (충격 프레팅에 의한 증기발생기 세관 마모손상 진행모델)

  • Park, Chi-Yong;Lee, Jeong-Kun;Kim, Tae-Ryong
    • Transactions of the Korean Society of Mechanical Engineers A
    • /
    • v.32 no.10
    • /
    • pp.817-822
    • /
    • 2008
  • Fretting wear is one of the important degradation mechanisms of steam generator tubes in the nuclear power plants. Especially, impact fretting wear occurred between steam generator tubes and tube support plates or anti-vibration bar. Various tests have been carried out to investigate the wear mechanisms and to report the wear coefficients. Those are fruitful to get insight for the wear damage of steam generator tubes; however, most wear researches have concentrated on sliding wear of the steam generator tubes, which may not represent the wear loading modes in real plants. In the present work, impact fretting tests of steam generator tube were carried out. A wear progress model for impact-fretting wear has been investigated and proposed. The proposed wear progress model of impact-fretting wear is as follows; oxide film breaking step at the initial stage, and layer formation step, energy accumulation step and finally particle torn out step which is followed by layer formation in the stable impact-fretting progress. The wear coefficient according to the work-rate model has been also compared with one between tube and support.

Fabrication of Porous Polytetrafluoroethylene thin Film from Powder Dispersion-solution for Energy Nanogenerator Applications (Polytetrafluoroethylene 분말 현탁액을 통한 다공성 박막 제조 및 에너지 발생소자 응용)

  • Park, Il-Kyu
    • Journal of Powder Materials
    • /
    • v.24 no.2
    • /
    • pp.102-107
    • /
    • 2017
  • Porous polytetrafluoroethylene (PTFE) thin films are fabricated by spin-coating using a dispersion solution containing PTFE powders, and their crystalline properties are investigated after thermal annealing at various temperatures ranging from 300 to $500^{\circ}C$. Before thermal annealing, the film is densely packed and consists of many granular particles 200-300 nm in diameter. However, after thermal annealing, the film contains many voids and fibrous grains on the surface. In addition, the film thickness decreases after thermal annealing owing to evaporation of the surfactant, binder, and solvent composing the PTFE dispersion solution. The film thickness is systematically controlled from 2 to $6.5{\mu}m$ by decreasing the spin speed from 1,500 to 500 rpm. A triboelectric nanogenerator is fabricated by spin-coating PTFE thin films onto polished Cu foils, where they act as an active layer to convert mechanical energy to electrical energy. A triboelectric nanogenerator consisting of a PTFE layer and Al metal foil pair shows typical output characteristics, exhibiting positive and negative peaks during applied strain and relief cycles due to charging and discharging of electrical charge carriers. Further, the voltage and current outputs increase with increasing strain cycle owing to accumulation of electrical charge carriers during charge-discharge.

An Extract from Hydrolyzed Normal Human Urine which Induces Drug Binding Defects (정상인뇨의 가수분해에 의한 의약품결합 저해유도인자의 추출)

  • 장판섭
    • YAKHAK HOEJI
    • /
    • v.26 no.4
    • /
    • pp.223-229
    • /
    • 1982
  • Uremia is associated with defective protein binding of weakly acidic drugs, whereas the protein binding of basic drugs tends to be normal. The exact chemical nature of compound(s) and mechanism for these changes as yet is unknown, and has not been defined. Organic solvent extraction of pooled normal human urine following hydrolysis by hydrochloric acid produced an extract, which when added to normal human serum, was capable of inducing binding defects similar to those in uremia. Binding defects were observed with the weakly acidic drugs such as nafcillin, salicylate, sulfamethoxazole and phenytoin while the binding of the basic drugs such as trimethoprim and quinidine were unaffected. The binding defects induced by the hydrolyzed urine extract could readily be corrected by same organic solvent extraction of acidified serum and the defects could be transferred to the normal human serum using the organic solvent layer at the physiologic pH (7.4). Followed by reacidification ind extraction of the binding defects induced serum with the same solvent, separated several fractions were obtained on thin-layer chromatography. One of these fractions could reinduce the binding defects and this factor(s) is apparently weakly acidic compounds and tightly bound to serum at physiologic pH, but extractable at acidic pH, and its molecular weight range is approximately 500 or less similar to those seen in uremia. These findings strongly support the hypothesis that the drug binding defect in uremia is due to the accumulation of endogenous metabolic products which arc normally excreted by the kidneys but accumulate in renal failure.

  • PDF

LC VCO using dual metal inductor in $0.18{\mu}m$ mixed signal CMOS process

  • Choi, Min-Seok;Jung, Young-Ho;Shin, Hyung-Cheol
    • Proceedings of the IEEK Conference
    • /
    • 2006.06a
    • /
    • pp.503-504
    • /
    • 2006
  • This paper presents the design and fabrication of a LC voltage-controlled oscillator (VCO) using 1-poly 6-metal mixed signal CMOS process. To obtain the high-quality factor inductor in LC resonator, patterned-ground shields (PGS) is placed under the symmetric inductor to reduce the effect from image current of resistive Si substrate. Moreover, due to the incapability of using thick top metal layer of which the thickness is over $2{\mu}m$, as used in many RF CMOS process, the structure of dual-metal layer in which we make electrically short circuit between the top metal and the next metal below it by a great number of via materials along the metal traces is adopted. The circuit operated from 2.63 GHz to 3.09 GHz tuned by accumulation-mode MOS varactor. The corresponding tuning range was 460 MHz. The measured phase noise was -115 dBc/Hz @ 1MHz offset at 2.63 GHz carrier frequency and the current consumption and the corresponding power consumption were about 2.6 mA and 4.68 mW respectively.

  • PDF

The literal study on obesity as the point of psychiatric aspect (정신의학적(精神醫學的) 관점(觀點)으로본 비만(肥滿)의 문헌적(文獻的) 고찰(考察))

  • Kim, Hyun-su;Lee, Sang-ryong
    • Journal of Haehwa Medicine
    • /
    • v.9 no.2
    • /
    • pp.277-292
    • /
    • 2001
  • 1. The obesity is the aggregation of symptoms accompanied with the metabolic disorder and the increase of fatty layer accumulation by the enlargement or increase of fatty cells, which is the condition that has 20% overweight than the standard. 2. The final metabolic of fat depends on the defensive energy. The shape of fatty layer is changed by the point where is the defensive energy is replenish or not. So Goin, Bein and Yuckin is made a discriminated and there is different between Besudaeso and Herlgidaso. 3. In case of liver overacting spleen by seven emotions, we can use reinforcing the spleen and don't use depressing energy. 4. Damp, weakness of Qi(氣), weakness of spleen came from seven emotion, and social stress can occur obesity. Obesity is reason of C.V.A, dizziness, dementia, schizophrenia, etc. 5. The obesity which can occurs various adult diseases came from eating disorder and various stresses at the standpoint of western medical. This is cured by diet, kinesiatrics, operation, pharmacotherapy, etc.

  • PDF

Experiments & numerical analysis of charge accumulation and flat band voltage shifts in irradiated MIS capacitor (放射線이 照射된 MIS capacitor의 電荷 蓄積 및 flat band 전압 이동에 대한 實驗 및 數値的 硏究)

  • 황금주;김홍배;손상희
    • The Transactions of the Korean Institute of Electrical Engineers
    • /
    • v.44 no.4
    • /
    • pp.483-489
    • /
    • 1995
  • To investigate the mechanism generated by irradiation in the insulator layer irradiated MIS (Metal - Insulator - Semiconductor) device, the various types of MIS capacitors depending on insulator thickness, insulator types and implanted impurities are fabricated on the P-type wafer. MIS capacitors exposed by 1Mrad Co$^{60}$ .gamma.-ray are measured for flat band voltage and charge density shifts pre- and post-irradiation. The measuring results of post-irradiation show the flat band voltage shifting toward negative direction and charge density increasing regardless of parameters. This results have a good agreement with calculated data by computer simulation. Si$_{3}$N$_{4}$ layers have a good radiation-hardness than SiO$_{2}$ layers compared to the results of post-irradiation. Also, radiation-induced negative trap is discovered in the implanted insulator layer. Using numerical analysis, four continuty equations (conduction-band electrons continuity equation, valence-band holes continuity equation, trapped electrons continuity equation, trapped holes continuity equation) are solved and charge distributions according to the distance and Si-Insulator interface states are investigated.

  • PDF

[ Sr2+ ] Stimulation of α-amylase and RNAse in Wheat Aleurone Layer

  • Kim, Tae-Wan
    • Korean Journal of Environmental Agriculture
    • /
    • v.22 no.4
    • /
    • pp.290-293
    • /
    • 2003
  • To measure an effects of strontium on secretion of ${\alpha}$-amylase and RNase, wheat aleurone layers were isolated after the pre-incubation in a solution with or without 10 mM $SrCl_2$ or $CaCl_2$ for 3 days at $25^{\circ}C$ in the dark under aseptic conditions. The secretion of ${\alpha}$-amylase reached a maximum at 72 h after incubation. $Sr^{2+}$ induced more effectively secretion of ${\alpha}$-amylase than $Ca^{2+}$. The ${\alpha}$-amylase secretions by $Sr^{2+}$ or $Ca^{2+}$ ware about $2 (Ca^{2+})$ to $2.5 (Sr^{2+})$ fold higher than it without divalent ions, When aleurone layers were incubated without divalent ions, however, the ${\alpha}$-amylase was remarkably retained in the tissues. Total ${\alpha}$-amylase synthesis (ie. tissues + media) was slightly lowered by 10mM $SrCl_2$ addition. It seemed that the RNase secretion begins at 18 h after incubation. This meaned that the RNase secretion may process slower than ${\alpha}$-amylasee secretion. $Ca^{2+}$ effect on RNase secretion is stronger than $Sr^{2+}$ unlikely to ${\alpha}$-amylase. The secretion process is likely to be suddenly induced between 72 hand 96 h. These results suggested that the secretion was enhanced after the accumulation in aleurone layers.

Leakage Current of Hydrogenated Amorphous Silicon Thin-Film Transistors (수소화된 비정질규소 박막트랜지스터의 누설전류)

  • Lee, Ho-Nyeon
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.8 no.4
    • /
    • pp.738-742
    • /
    • 2007
  • The variations in the device characteristics of hydrogenated amorphous thin-film transistors (a-Si:H TFTs) were studied according to the processes of pixel electrode fabrication to make active-matrix flat-panel displays. The off-state current was about 1 pA and the switching ratio was over $10^6$ before fabrication of pixel electrodes; however, the off-state current increased over 10 pA after fabrication of pixel electrodes. Surface treatment on SiNx passivation layers using plasma could improve the off-state characteristics after pixel electrode process. $N_2$ plasma treatment gave the best result. Charge accumulation on the SiNx passivation layer during the deposition of transparent conducting layer might cause the increase of off-state current after the fabrication of pixel electrodes.

  • PDF