• The Korean Journal of Quaternary Research
• /
• v.17 no.2
• /
• pp.129-133
• /
• 2003

Water is critically important for Tricholoma matsutake(Tm) growth because it is the major component of the mushroom by over 90%. The mushroom absorbs water through the below ground hyphal colony. Therefore, the objectives of our study were to investigate spatio-temporal water changes in Tm colonies. This study was carried out at Tm fruiting sites in Sogni Mt National Park, where the below-ground mushroom colonies have been irrigated. To identify spatial water status within the Tm soil colony soil moisture and ergosterol content were measured at six positions including a mushroom fruiting position on the line of the colony radius. To investigate temporal soil moisture changes in the soil colony, Time Domain Reflectometry(TDR) sensors were established at the non-colony and colony front edge, and water data were recorded with CR10X data logger from late August to late October. Before irrigation, whereas it was 12.8% at non-colony, the soil water content within Tm colony was 8.0% at 0-5cm from the colony front edge, 6.2% at 10-15cm and 6.5-7.5% at 20-40cm. And the content was 12.1% at 80cm distance from the colony edge, which is similar to that at the non-colony. In contrast, ergosterol content which is proportional to the live hyphal biomass was only 0.4${\mu}g$/g fresh soil at the uncolonized soil, while 4.9 $\mu\textrm{g}$/g fresh soil at the front edge where the hyphae actively grow, and 3.8 ${\mu}g$/g fresh soil at the fruiting position, l.1${\mu}g$/g at 20cm distance and 0.4${\mu}g$/g in the 40cm rear area. Generally, in the Tm fungal colony the water content changes were reversed to the ergosterol content changes. While the site was watered during August to October, the soil water contents were 13.5∼23.0% within the fungal colony, whereas it was 14.5∼26.0% at the non-colony. That is, soil water content in the colony was lower by 1.0∼3.0% than that in the non-colonized soil. Our results show that Tm colony consumes more soil water than other parts. Especially the front 30cm within the hyphal colony parts is more critical for soil water absorption.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.5
• /
• pp.447-453
• /
• 1999

Congruent $LiNbO_3$ crystals with doped Mg and codoped with Mn or Fe were grown by the Czochralski method. It is known that the physical properties of $LiNbO_3$ depend strongly on the addition of Mg and transition metals. This is established by studying the following properties; XRD patterns, the phase transition temperature, energy of the fundamental absorption edge, the shape of the absorption band of the $OH^-$ vibration and lines of the ESR of $Fe^{3+},\; Mn^{2+}$. The position of the UV absorption edge and the shape and peak point of the absorption band of the $OH^-$ vibrational band changed monotonously up to a critical concentration of $Mg^{2+}$ ions. The mechanism of the incorporation of Mg ions changes at this concentration. The transition temperature was estimated by measuring the dielectric temperature behavior up to $1230^{\circ}C$ in a frequency range of 100Hz to 10MHz. EPR of $Mn^{2+}\;and\; Fe^{3+}$ ions were employed to investigated the Mg doping effects in the $LiNbO_3$ crystal. The increase of linewidths and the asymmetry of signals were observed in all crystals. New signals of $Fe^{3+}$ arising from the new centers were observed I the heavily Mg-doped crystals.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.13 no.2
• /
• pp.79-82
• /
• 2003

GaN nanoparticles were synthesized by the pulsed laser deposition (PLD) process on $SiO_2$substrate after irradiating the surface of the GaN sintered pellet by the ArF (193 nm) excimer laser. At this moment Ar gas pressure of 100 Pa, 50 Pa, 10 Pa and 1 Pa were applied during the ablation process and laser power of 100 mJ and 200 mJ were also applied. The synthesized fan nanoparticles were characterized by XRD, SEM, TEM, XPS and optical absorption spectra. The synthesized GaN nanoparticles had the crystallite sizes of 20~30 nm, and besides, GaN nanoparticles synthesized under low Ar gas pressure compared to the others corresponded with stoichiometry, and the optical band edge of the GaN nanoparticles was blueshifted.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.11 no.4
• /
• pp.180-183
• /
• 2001

$YVO_{4}$ and Nd:$YVO_{4}$ single crystals have been grown developed Edge-defined film-fed growth (EFG) method and the crystals were measured on optical properties. $YVO_{4}$ and Nd:$YVO_{4}$ single crystal were transparent, high quality due to homogeneity of surface temperature of the melt and stability of meniscus during crystal growth. In transmittance and absorption spectra, Nd:$YVO_{4}$ single crystals had absorption peaks at wavelengths of 532, 593, 753, 808, 888 though $YVO_{4}$ single crystal had a broad transmittance at wavelength ranging from 340 to 1000nm. Also, Nd:$YVO_{4}$ single crystals had emissions of energy at range of 800~900 nm in photoluminescence (PL) spectrum.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.36 no.10
• /
• pp.1155-1162
• /
• 2012

The purpose of this study is to investigate the effects of the bead shape on the crash performance of an aluminum crash box under a low-velocity impact condition. The initial peak load and impact energy absorption of a crash box with three types of bead shapes-edge concave, surface convex, and surface concave type-were studied through an FE analysis and an experiment. In addition, the effects of the bead shapes on the crash performance of the crash box were verified through a low-velocity-impact test with a front side member assembled with an aluminum crash box. The initial peak load of the surface-concave-type crash box was reduced by the bead, and therefore, deformation of the front side member at initial contact could be prevented. Furthermore, there was no deformation of the front side member after the impact test because the crash box with a surface-concave-type bead absorbed all the impact energy.

• Applied Science and Convergence Technology
• /
• v.25 no.1
• /
• pp.19-24
• /
• 2016

In this study, we evaluated the change of electronic structure during redox process in cerium-doped $ZrO_2$ grown by sol gel method. By sol-gel method, we could obtain cerium-doped $ZrO_2$ in high oxygen partial pressure and low temperature. After post annealing process in nitrogen ambient, the film is deoxidized. We used spectroscopic and theoretical methods to analysis change of electronic structure. X-ray absorption spectroscopy (XAS) for O K1-edge and Density Functional Theory (DFT) calculation using VASP code were performed to verify the electronic structure of the film. Also, high resolution x-ray photoelectron spectroscopy (HRXPS) for Ce 3d was carried out to confirm chemical bond of cerium doped $ZrO_2$. Through the investigation of the electronic structure, we verified as followings. (1) During reduction process, binding energy of oxygen is increase. Simultaneously, oxidation state of cerium was change to 4+ to 3+. (2) Cerium 4+ and cerium 3+ states were generated at different energy level. (3) Absorption states in O K edge were mainly originated by Ce 4+ $f_0$ and Ce 3+, while occupied states in valance band were mainly originated from Ce 4+ $f_2$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.283-283
• /
• 2011

The n-doping effect by doping metal carbonate into an electron-injecting organic layer can improve the device performance by the balanced carrier injection because an electron ohmic contact between cathode and an electron-transporting layer, for example, a high current density, a high efficiency, a high luminance, and a low power consumption. In the study, first, we investigated an electron-ohmic property of electron-only device, which has a ITO/$Rb_2CO_3$-doped $C_{60}$/Al structure. Second, we examined the I-V-L characteristics of all-ohmic OLEDs, which are glass/ITO/$MoO_x$-doped NPB (25%, 5 nm)/NPB (63 nm)/$Alq_3$ (32 nm)/$Rb_2CO_3$-doped $C_{60}$(y%, 10 nm)/Al. The $MoO_x$doped NPB and $Rb_2CO_3$-doped fullerene layer were used as the hole-ohmic contact and electron-ohmic contact layer in all-ohmic OLEDs, respectively, Third, the electronic structure of the $Rb_2CO_3$-doped $C_{60}$-doped interfaces were investigated by analyzing photoemission properties, such as x-ray photoemission spectroscopy (XPS), Ultraviolet Photoemission spectroscopy (UPS), and Near-edge x-ray absorption fine structure (NEXAFS) spectroscopy, as a doping concentration at the interfaces of $Rb_2CO_3$-doped fullerene are changed. Finally, the correlation between the device performance in all ohmic devices and the interfacial property of the $Rb_2CO_3$-doped $C_{60}$ thin film was discussed with an energy band diagram.

• Journal of the Korean Vacuum Society
• /
• v.12 no.4
• /
• pp.275-280
• /
• 2003

Epitaxial Gd$_2O_3:Eu^{3+}$luminescent thin films have been grout on Si(III) substrates using ionized Cluster Beam Deposition (ICBD). After the film growing, they were implanted and post annealed to change the crystal structure. The initial growth stage was monitored by using in-situ Reflection High Energy Electron Diffraction (RHEED). The formed crystal structure was identified with X-ray diffraction (XRD) technique and Fourier transform infrared (FT-R) spectroscopy. The electronic states variations were investigated by Near Edge X-ray Absorption Fine Structure (NEXAFS). Photoluminescence (PL), Cathodoluminescence (CL). and Vacuum ultraviolet (VUV) spectrum were used for examining the optical properties. We report the optical property changes depending on crystal structure and the electronic states.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.230.2-230.2
• /
• 2015

Nanoparticles of magnesium ferrite are used as a heterogeneous catalyst, humidity sensor, oxygen sensor and cure of local hyperthermia. These applications usually utilize the magnetic behavior of these nanoparticles. Moreover, magnetic properties of nanoferrites exhibit rather complex behavior compared to bulk ferrite. The magnetic properties of ferrites are complicated by spins at vortices, surface spins. Reports till date indicate strong dependency on the structural parameters, oxidation state of metal ions and their presence in octahedral and tetrahedral environment. Thus we have carried out investigation on magnesium ferrite nanoparticles in order to study coordination, oxidation state and structural distortion. For present work, magnesium ferrite nanoparticles were synthesized using nitrates of metal ions and citric acid. Fe L-edge spectra measured for these nanoparticles shows attributes of $Fe^{3+}$ in high spin state. Moreover O K-edge spectra for these nanoparticles exhibit spectral features that arises due to unoccupied states of O 2p character hybridized with metal ions. Mg K-edge spectra shows spectral features at 1304, 1307, 1311 and 1324 eV for nanoparticles obtained after annealing at 400, 500, 600, 800, 1000, and $1200^{\circ}C$. Apart from this, spectra for precursor and nanoparticles obtained at $300^{\circ}C$ exhibit a broad peak centered around 1305 eV. A shoulde rlike structure is present at 1301 eV in spectra for precursor. This feature does not appear after annealing. After annealing a small kink appear at ~1297 eV in Mg K-edge spectra for all nanoparticles. This indicates changes in local electronic structure during annealing of precursor. Observed behavior of change in local electronic structure will be discussed on the basis of existing theories.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.21 no.5
• /
• pp.861-868
• /
• 2017

Near band infrared imaging technique has adopted for imaging EL2 and shallow level distributions in undoped semi-insulating LEC GaAs. This technique, which relies on the mapping of near bandgap infrared transmission, is both rapid and non-destructive. Until now no quantitative analysis has been reported for near band edge region which gives the reverse contrast on EL2 absorption images. This paper presents the spectral, spatial and temperature dependence of photoquenching forward and inverse mechanism in the band edge domain for cells and walls and for direct and inverted contrast conditions during transitory regimes. The difference in the threshold for the EL2w and EL2b defects could be attributed to the contribution of a different electrical assistance due to a different species of impurities. Quantitative analysis results show an increased density of EL2w and a small reduction of EL2b in the region of the walls where there is a high density of dislocations.