• Title/Summary/Keyword: Absolute differencing circuit

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An Analog Content Addressable Memory implemented with a Winner-Take-All Strategy (승자전취 메커니즘 방식의 아날로그 연상메모리)

  • Chai, Yong-Yoong
    • The Journal of the Korea institute of electronic communication sciences
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    • v.8 no.1
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    • pp.105-111
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    • 2013
  • We have developed an analog associative memory implemented with an analog array which has linear writing and erasing characteristics. The associative memory adopts a winner-take-all strategy. The operation for reading in the memory is executed with an absolute differencing circuit and a winner-take-all (WTA) circuit suitable for a nearest-match function of a content-addressable memory. We also present a system architecture that enables highly-paralleled fast writing and quick readout as well as high integration density. A multiple memory cell configuration is also presented for achieving higher integration density, quick readout, and fast writing. The system technology presented here is ideal for a real time recognition system. We simulate the function of the mechanism by menas of Hspice with $1.2{\mu}$ double poly CMOS parameters of MOSIS fabrication process.

Design of an Analog Content Addressable Memory Implemented with Floating Gate Treansistors (부유게이트 트랜지스터를 이용한 아날로그 연상메모리 설계)

  • Chai, Yong-Yoong
    • The Transactions of the Korean Institute of Electrical Engineers D
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    • v.50 no.2
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    • pp.87-92
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    • 2001
  • This paper proposes a new content-addressable memory implemented with an analog array which has linear writing and erasing characteristics. The size of the array in this memory is $2{\times}2$, which is a reasonable structure for checking the disturbance of the unselected cells during programming. An intermediate voltage, Vmid, is used for preventing the interference during programming. The operation for reading in the memory is executed with an absolute differencing circuit and a winner-take-all (WTA) circuit suitable for a nearest-match function of a content-addressable memory. We simulate the function of the mechanism by means of Hspice with 1.2${\mu}m$ double poly CMOS parameters of MOSIS fabrication process.

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Design of DC-DC converter controller implemented with analog memory (아날로그 메모리를 이용한 DC-DC컨버터 제어기 설계)

  • Chai, Yong-Yoong;Do, Wang-Lok
    • The Journal of the Korea institute of electronic communication sciences
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    • v.10 no.3
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    • pp.357-364
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    • 2015
  • This research presents a DC-DC converter controller implemented with an analog memory. The structure of the converter will contribute to solve the stability problem unavoidable in a conventional closed loop converter. The analog memory will be used for realizing CAM(Contents Addressable Memory) which contains the output of the converter and the relevant duty ratio, respectively. The operation for reading in the memory is executed with an absolute differencing circuit and a WTA(Winner-Take-All) circuit suitable for a nearest-match function of the CAM. We also present a system architecture that enables highly-paralleled fast writing and quick readout as well as high integration density.