• 제목/요약/키워드: Abrasives

검색결과 192건 처리시간 0.018초

타이타늄 파이프의 내면 자기연마 가공에 관한 연구 (A Study on the Characteristics of Internal-Face Magnetic Abrasive Finishing for Titanium Pipe)

  • 이여해;문상돈;김영환;박원기;양균의
    • 한국정밀공학회지
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    • 제28권6호
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    • pp.701-708
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    • 2011
  • Although Titanium material has superior properties, it belongs to difficult-to-machine materials. The present research applies magnetic abrasive finishing to precision machining of internal-face of titanium pipes, and analyzed & assessed the influence of grinding conditions on magnetic abrasive effects through the removed amount and surface roughness of materials. There was the influence on grinding properties according to change of rotational speed, a total input of mixed powder and an input of grinding liquid, and when the total input, rotational speed and ratio of electrolytic iron versus magnetic abrasives are 8g and 1000rpm, it was most advantageous in aspects of surface roughness and material removal amount, and the grinding liquid remarkably improved the surface roughness and material removal amount only with addition of trace amounts of light oil rather than dry machining conditions. And a result of considering the influence on grinding properties by using an inert gas (Argon gas) for improving grinding properties of the internal-face of titanium pipe, the present research has obtained improvement effects in the removal amount and surface roughness through utilization of an inert gas.

CMP특성과 온도의 상호관계에 관한 연구 (A Study on the Correlation between Temperature and CMP Characteristics)

  • 권대희;김형재;정해도;이응숙;신영재
    • 한국정밀공학회지
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    • 제19권10호
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    • pp.156-162
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    • 2002
  • There are many factors affecting the results of CMP (Chemical Mechanical Polishing). Among them, the temperature is related to the removal rate and WIWNU (Within Wafer Non-Uniformity). In other words, the removal rate is proportional to the temperature and the variation of temperature distribution on a pad affects the non-uniformity within a wafer. In the former case, the active chemistry improves the rate of chemical reaction and the removal rate becomes better. But, there are not many advanced studies. In the latter case, a kinematical analysis between work-piece and pad can be obtained. And such result analysed from the mechanical aspect can be directly related to the temperature distribution on a pad affecting WIWNU. Meanwhile, the temperature change affects the quantities of both slurry and pad. The change of a pH value of the slurry chemistry due to a temperature variation affects the surface state of an abrasive particle and hence the agglomeration of abrasives happens above the certain temperature. And the pH alteration also affects the zeta potential of a pad surface and therefore the electrical force between pad and abrasive changes. Such results could affect the removal rate and etc. Moreover, the temperature changes the 1st and 2nd elastic moduli of a pad which are closely related to the removal rate and the WIWNU.

Sr-Ferrite와 GC를 이용한 자기연마재 개발 (Development of the Magnetic Abrasive Using Sr-Ferrite and GC)

  • 윤여권;김상백;김희남
    • 한국안전학회지
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    • 제26권2호
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    • pp.13-19
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    • 2011
  • The magnetic polishing is the useful method to finish using magnetic power of magnet. That method is one of precision polishing techniques and has an aim of the clean technology using for the pure of gas and inside of the clean pipe. The magnetic abrasive polishing method is not so common for machine that it is not spreaded widely. There are rarely researcher in this field because of non-effectiveness of magnetic abrasive. Therefore, in this paper deals with development of the magnetic abrasive using Sr-Ferrite. In this development, abrasive grain GC used to resin bond fabricated low temperature. And Sr-Ferrite of magnetic abrasive powder fabricated that Sr-Ferrite was crused into 200 mesh. The XRD analysis result show that only GC abrasive and Sr-Ferrite crystal peaks detected which explains resin bond was not any more chemical reaction. From SEM analysis it is found that GC abrasive and Sr-Ferrite were strong bonding with each other by bond. The magnetic polishing is performed by polishing the surface of pipe by attracting magnetic abrasives with magnetic fields. This can be widely applied for finishing machinery fabrications such as various pipes and for other safety processes. In this paper, we could have investigated in to the changes of the movement of magnetic abrasive grain. In reference to this result, we could have made the experiment which is set under the condition of the magnetic flux density, polishing velocity according to the form of magnetic brush.

Octamethylcyclotetrasiloxane를 이용한 광섬유 클래드 프리폼 형성 (Formation of Optical Fiber Preform Using Octamethylcyclotetrasiloxane)

  • 최진석;이태균;박성규;이가형;전구식;안성진
    • 한국재료학회지
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    • 제28권1호
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    • pp.6-11
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    • 2018
  • There are various manufacturing processes for pure $SiO_2$ that is used as abrasives, chemicals, filters, and glasses, and in metallurgy and optical industries. In the optical fiber industry, to produce $SiO_2$ preform, $SiCl_4$ is utilized as a raw material. However, the combustion reaction of $SiCl_4$ has caused critical environmental issues, such as ozone deficiency by chlorine compounds, the greenhouse effect by carbon dioxide and corrosive gas such as hydrochloric acid. Thus, finding an alternative source that does not have those environmental issues is important for the future. Octamethylcyclotetrasiloxane (OMCTS or D4) as a chlorine free source is recently promising candidate for the $SiO_2$ preform formation. In this study, we first conducted a vaporizer design to vaporize the OMCTS. The vaporizer for the OMCTS vaporization was produced on the basis of the results of the vaporizer design. The size of the primary particle of the $SiO_2$ formed by OMCTS was less than 100 nm. X-ray diffraction patterns of the $SiO_2$ indicated an amorphous phase. Fourier-transform infrared spectroscopy analysis revealed the Si-O-Si bond without the -OH group.

$BaTiO_3$$TiO_2$ 연마제 첨가를 통한 BTO박막의 CMP (CMP of BTO Thin Films using $TiO_2$ and $BaTiO_3$ Mixed Abrasive slurry)

  • 서용진;고필주;김남훈;이우선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.68-69
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    • 2005
  • BTO ($BaTiO_3$) thin film is one of the high dielectric materials for high-density dynamic random access memories (DRAMs) due to its relatively high dielectric constant. It is generally known that BTO film is difficult to be etched by plasma etching, but high etch rate with good selectivity to pattern mask was required. The problem of sidewall angle also still remained to be solved in plasma etching of BTO thin film. In this study, we first examined the patterning possibility of BTO film by chemical mechanical polishing (CMP) process instead of plasma etching. The sputtered BTO film on TEOS film as a stopper layer was polished by CMP process with the self-developed $BaTiO_3$- and $TiO_2$-mixed abrasives slurries (MAS), respectively. The removal rate of BTO thin film using the$ BaTiO_3$-mixed abrasive slurry ($BaTiO_3$-MAS) was higher than that using the $TiO_2$-mixed abrasive slurry ($TiO_2$-MAS) in the same concentrations. The maximum removal rate of BTO thin film was 848 nm/min with an addition of $BaTiO_3$ abrasive at the concentration of 3 wt%. The sufficient within-wafer non-uniformity (WIWNU%)below 5% was obtained in each abrasive at all concentrations. The surface morphology of polished BTO thin film was investigated by atomic force microscopy (AFM).

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산화제 첨가에 따른 W-CMP 특성 (W Chemical Mechanical Polishing (CMP) Characteristics by oxidizer addition)

  • 박창준;서용진;이경진;정소영;김철복;김상용;이우선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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    • pp.46-49
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    • 2003
  • Chemical mechanical polishing (CMP) is an essential dielectric planarization in multilayer microelectronic device fabrication. In the CMP process it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on W passivation layer, in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5% hydrogen peroxide such as $Fe(NO_3)_3$, $H_2O_2$, and $KIO_3$. The difference in removal rate and roughness of W in stable and unstable slurries are believed to caused by modification in the mechanical behavior of $Al_3O_3$ particles in presence of surfactant stabilizing the slurry.

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전해-자기 복합 가공을 이용한 미세 그루브형상의 가공 특성에 관한 연구 (Characteristic of EP-MAP for Deburring of Microgroove using EP-MAP)

  • 김상오;손출배;곽재섭
    • 대한기계학회논문집A
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    • 제37권3호
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    • pp.313-318
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    • 2013
  • 전자기력을 이용한 자기연마 공정은 전통적 가공방식으로 버를 제거하기 힘든 비자성체의 소재 및 마이크로 형상의 가진 제품에 활용될 수 있는 새로운 정밀 디버링 방식이다. 그러나 이러한 자기연마법은 자기연마입자를 이용한 기계적 절삭력을 이용하고 있기 때문에 마이크로 단위의 구조물의 형상을 변형시킬 가능성이 높다. 따라서 본 연구에서는 탄소나노튜브-코발트 금속복합체를 이용한 전해-자기복합가공을 STS316 소재의 미세 그루브의 마이크로 디버링공정에 적용하고 그 특성을 분석하였다. 그 결과 자기연마공정을 적용한 공정에서는 공정 후 그루브에 생성된 버는 효율적으로 제거되었으나 그루브 끝단의 형상변화가 두드러지게 관찰되었다. 반면 전해-자기복합가공을 이용한 경우에는 재료제거율이 낮아 그루브 끝단의 형상변화 없이 디버링 공정이 진행됨을 확인하였다.

연마제 첨가를 통한 BTO Film의 CMP (CMP of BTO Thin Films using Mixed Abrasive slurry)

  • 김병인;이기상;박정기;정창수;강용철;차인수;정판검;신성헌;고필주;이우선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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    • pp.101-102
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    • 2006
  • BTO ($BaTiO_3$) thin film is one of the high dielectric materials for high-density dynamic random access memories (DRAMs) due to its relatively high dielectric constant, It is generally known that BTO film is difficult to be etched by plasma etching, but high etch rate with good selectivity to pattern mask was required. The problem of sidewall angle also still remained to be solved in plasma etching of BTO thin film. In this study, we first examined the patterning possibility of BTO film by chemical mechanical polishing (CMP) process instead of plasma etching. The sputtered BTO film on TEOS film as a stopper layer was polished by CMP process with the sell-developed $BaTiO_3$- and $TiO_2$-mixed abrasives slurries (MAS). respectively. The removal rate of BTO thin film using the $BaTiO_3$-mixed abrasive slurry ($BaTiO_3$-MAS) was higher than that using the $TiO_2$-mixed abrasive slurry ($TiO_2$-MAS) in the same concentrations. The maximum removal rate of BTO thin film was 848 nm/min with an addition of $BaTiO_3$ abrasive at the concentration of 3 wt%.

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화학적 처리를 적용한 Slurry 분리 및 비교분석 검증 연구 (A Study on Slurry Isolation Through Chemical Processing, with Comparative Analysis and Validation)

  • 나원식
    • 디지털콘텐츠학회 논문지
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    • 제14권1호
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    • pp.35-40
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    • 2013
  • 연마재와 Coolant를 이용한 슬러리는 그동안 반도체 웨이퍼를 시작으로 태양광 산업의 Wire Saw에서 사용량이 급격히 증가하였다. 이에 본 논문에서는 슬러리를 분리 정제하여, 수세뿐만 아니라 화학적 처리를 통하여 보다 고순도의 실리콘카바이드 분말을 얻어, 마이크로웨이브 건조방식으로 건조하였다. 건조한 슬러리 벌크를 분쇄하고 화학적 처리까지 수행하여 제작한 Powder를 각각 열분석, 입도분석, SEM 촬영, 성분분석, XRF, XRD을 통하여 분석하였다. 본 연구 결과 화학적 처리를 통하여 얻은 Powder의 회수율이 수세 처리를 통하여 얻은 Powder 보다 더 높아지는 것을 알 수 있었다. 태양광 소재 산업에서 발생하는 다량의 슬러리를 통합, 재활용함으로 점차 강화되고 있는 국내외 환경 규제에 적극 대응하고, 관련 소재 산업의 인프라 구축 효과를 기대할 수 있다.

Use of Adaptive Meshes in Simulation of Combustion Phenomena

  • Yi, Sang-Chul;Koo, Sang-Man
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1996년도 제11차 KACG 학술발표회 Crystalline Particle Symposium (CPS)
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    • pp.285-309
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    • 1996
  • Non oxide ceramics such as nitrides of transition metals have shown significant potential for future economic impact, in diverse applications in ceramic, aerospace and electronic industries, as refractory products, abrasives and cutting tools, aircraft components, and semi-conductor substrates amid others. Combustion synthesis has become an attractive alternative to the conventional furnace technology to produce these materials cheaply, faster and at a higher level of purity. However he process os highly exothermic and manifests complex dynamics due to its strongly non-linear nature. In order to develop an understanding of this process and to study the effect of operational parameters on the final outcome, numerical modeling is necessary, which would generated essential knowledge to help scale-up the process. the model is based on a system of parabolic-hyperbolic partial differential equations representing the heat, mass and momentum conservation relations. The model also takes into account structural change due to sintering and volumetric expansion, and their effect on the transport properties of the system. The solutions of these equations exhibit steep moving spatial gradients in the form of reaction fronts, propagating in space with variable velocity, which gives rise to varying time scales. To cope with the possibility of extremely abrupt changes in the values of the solution over very short distances, adaptive mesh techniques can be applied to resolve the high activity regions by ordering grid points in appropriate places. To avoid a control volume formulation of the solution of partial differential equations, a simple orthogonal, adaptive-mesh technique is employed. This involves separate adaptation in the x and y directions. Through simple analysis and numerical examples, the adaptive mesh is shown to give significant increase in accuracy in the computations.

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