• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1157-1164
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• 2003

This paper shows the results of atomistic modeling for the interaction between spherical nano abrasive and substrate in chemical mechanical polishing processes. Atomistic modeling was achieved from 2-dimensional molecular dynamics simulations using the Lennard-Jones 12-6 potentials. The abrasive dynamics was modeled by three cases, such as slipping, rolling, and rotating. Simulation results showed that the different dynamics of the abrasive results the different features of surfaces. This model can be extended to investigate the 3-dimensional chemical mechanical polishing processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.561-562
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• 2006

The purpose of this study was to investigate the root cause of adhesion of silica and ceria particles during Poly-Si, TEOS, and SiN CMP process, respectively. The zeta-potentials of abrasive particles and wafers were observed negative surface charges in the alkaline solutions. SAC and STI patterned wafers have intermediate values of their composition surface's zeta potentials. The theoretical interaction force and adhesion force of silica and ceria particle were calculated in solution with acidic, neutral and alkaline pH. A stronger attractive force was calculated for silica and ceria particles on wafers in acidic solutions than in alkaline solutions. The theoretical interaction forces of the SAC and STI patterned wafers have intermediate values of their constitution wafer's values. The adhesion forces is observed lower values in alkaline solutions than in acidic solutions. And the ceria particle has lower adhesion than that of the silica particle.

• Journal of the Semiconductor & Display Technology
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• v.10 no.3
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• pp.49-52
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• 2011

This paper shows the results of classical molecular dynamics modeling for the interaction between spherical nano abrasive and substrate in chemical mechanical polishing processes. Atomistic modeling was achieved from 3-dimensional molecular dynamics simulations using the Morse potential functions for chemical mechanical polishing. The abrasive dynamics was modeled by three cases, such as slipping, rolling, and rotating. Simulation results showed that the different dynamics of the abrasive results the different features of surfaces. The simulation concerning polishing pad, abrasive particles and the substrate has same results.

• Journal of the Speleological Society of Korea
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• no.71
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• pp.13-17
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• 2006

New methods of nano sized material and composite coating preparations have been considered on the base of mathematical model of abrasion reaction interaction of milling and grinding bodies in planetary centrifugal mill. The essence of the method is the abrasive and oxidative wear of the milling bodies and amorphous (better inert) additives. Interactions between them has been supplied the necessary impulse of pressure and temperature on the impact frictional contacts and promoted chemical processes. The offered method can find application for such processing as sintering and geological minerals opening.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.643-644
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• 2005

New methods of nano-sized material and composite coating preparations have been considered on the base of mathematical model of abrasion-reaction interaction of milling and grinding bodies in planetary centrifugal mill. The essence of the method is the abrasive and oxidative wear of the milling bodies and amorphous (better inert) additives. Interactions between them has been supplied the necessary impulse of pressure and temperature on the impact-frictional contacts and promoted chemical processes. The offered method can find application for such processing as sintering and geological minerals opening.

• Transactions of the Korean Society of Mechanical Engineers
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• v.17 no.10
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• pp.2509-2517
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• 1993

Lapping is a very complicated and random process resulting from the variation of abrasive grains in its sizes and shapes and from the numerous factors having an effect on the process quality. Thus it needs to be analyzed by experimental method rather than by theoretical method to obtain the relative effects of factors quantitatively. In this study, cylindrical lapping experiment designed by Taguchi's L8 orthogonal array was performed and analyzed by Yates' ANOVA table. As a result, effective factors and interaction effects were identified and discussed. Also the optimal factor combination to obtain the largest improvement of surface roughness was selected and confirmatory experiments were peformed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.605-609
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• 2005

Chemical mechanical polishing (CMP) of Ni was performed by the various ratios of four kinds of oxidizers and an addition of alumina powders as an abrasive in each slurry with the different oxidizers. Moreover, the interaction between the Ni and the each oxidizer was discussed by potentiodynamic polarization measurement, in order to compare the effects of Ni-CMP and electrochemical characteristics on the Ni with the different oxidizers. As an experimental result, the removal rate of Ni reached a maximum at 1 $vol\%$ of $H_2O_2$. Also the removal rates of Ni increased with the audition of alumina abrasives in each slurry. The potentiodynamic polarization of Ni under dynamic condition showed a significant difference in electrochemical behavior by addition of $H_2O_2$ in solutions. Ni showed the perfect passivation behavior in solution without $H_2O_2$ under potentiodynamic polarization condition, while active dissolution dominates in solution with the addition of $H_2O_2$. The results indicate that the surface chemistry and electrochemical characteristics of Ni play an important role in controlling the polishing behavior of Ni.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.529-529
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• 2007

Ruthenium (Ru) is a white metal and belongs to platinum group which is very stable chemically and has a high work function. It has been widely studied to apply Ru as an electrode material in memory devices and a Cu diffusion barrier metal for Cu interconnection due to good electrical conductivity and adhesion property to Cu layer. To planarize deposited Ru layer, chemical mechanical planarization(CMP) was suggested. However, abrasive particle can induce particle contamination on the Ru layer surface during CMP process. In this study, zeta potentials of Ru and interaction force of alumina particles with Ru substrate were measured as a function of pH. The etch rate and oxidation behavior were measured as a function of chemical concentration of several organic acids and other acidic and alkaline chemicals. PRE (particle removal efficiency) was also evaluated in cleaning chemical.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.956-959
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• 2002

In this work, a new non-lithographic micro-fabrication technique is presented. The motivation of this work is to overcome the demerits of the most commonly used photo-lithographic techniques. The micro-fabrication technique presented in this work is a two-step process which consists of mechanical scribing followed by chemical etching. This method has many advantages over other micro-fabrication techniques since it is simple, cost-effective, rapid, and flexible. Also, the technique can be used to obtain a metal structure which has sub-micrometer width patterns. In this paper, the concept of this method and its application to microsystem technology are described.

• International Journal of Precision Engineering and Manufacturing
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• v.4 no.5
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• pp.22-26
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• 2003

In this work, a new non-photolithographic micro-fabrication technique is presented. The motivation of this work is to overcome the demerits of the most commonly used photolithographic techniques. The micro-fabrication technique presented in this work is a two-step process which consists of mechanical scribing followed by chemical etching. This method has many advantages over other micro-fabrication techniques since it is simple, cost-effective, rapid, and flexible. Also, the technique can be used to obtain a metal structure which has sub-micrometer width patterns. In this paper, the concept of this method and its application to microsystem technology are described.