• 전기학회논문지
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• 제56권3호
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• pp.566-570
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• 2007

The specific electrical, optical and acoustic properties of Zinc Oxide (ZnO) are important for semiconductor process which has many various applications. Piezoelectric ZnO films has been widely used for such as transducers, bulk and surface acoustic-wave resonators, and acousto-optic devices. In this study, we investigated etch characteristics of ZnO thin films in inductively coupled plasma etch system with $BCl_3/Ar$ gas mixture. The etching characteristics of ZnO thin films were investigated in terms of etch rates and selectivities to $SiO_2$ as a function of $BCl_3/Ar$ gas mixing ratio, RF power, DC bias voltage and process pressure. The maximum ZnO etch rate of 172 nm/min was obtained for $BCl_3$ (80%)/Ar(20%) gas mixture. The chemical states on the etched surface were investigated with X-ray photoelectron spectroscopy (XPS).

• 한국재료학회지
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• 제31권3호
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• pp.162-171
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• 2021

Dry etching of copper thin films is performed using high density plasma of ethylenediamine (EDA)/hexafluoroisopropanol (HFIP)/Ar gas mixture. The etch rates, etch selectivities and etch profiles of the copper thin films are improved by adding HFIP to EDA/Ar gas. As the EDA/HFIP concentration in EDA/HFIP/Ar increases, the etch rate of copper thin films decreases, whereas the etch profile is improved. In the EDA/HFIP/Ar gas mixture, the optimal ratio of EDA to HFIP is investigated. In addition, the etch parameters including ICP source power, dc-bias voltage, process pressure are varied to examine the etch characteristics. Optical emission spectroscopy results show that among all species, [CH], [CN] and [H] are the main species in the EDA/HFIP/Ar plasma. The X-ray photoelectron spectroscopy results indicate the formation of CuCN compound and C-N-H-containing polymers during the etching process, leading to a good etch profile. Finally, anisotropic etch profiles of the copper thin films patterned with 150 nm scale are obtained in EDA/HFIP/Ar gas mixture.

• 한국통신학회논문지
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• 제35권8B호
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• pp.1115-1121
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• 2010

DNAv6는 IPv6네트워크에서 보다 빠르게 호스트의 링크 연결을 지원하기 위한 프로토콜이며, 이동성 관리의 분류에서는 이동성 감지에 속하는 분야이다. 하지만 DNAv6에서는 DNAv6를 지원하는 AR과 호스트에 대한 논의만 진행되어있기 때문에 추후에 DNAv6와 non-DNAv6 호스트가 혼재된 네트워크에서 non-DNAv6 호스트를 지원할 수 없는 문제가 발생한다. 본 논문에서는 DNAv6 망에서 non-DNAv6 호스트를 지원하기 위하여 DNAv6AR이 제공하는 정보를 통해 링크 이동 여부를 판단하던 호스트를 대신하여 AR이 이에 대한 판단을 내려 호스트에 알려주는 RCA 알고리즘과 RCA 알고리즘을 적용하기 위한 Modified RS 메시지와 Reconf_Link를 메시지를 제안하였다. 시뮬레이션을 통해 기존의 ND 프로세스와 DNAv6 망에서의 핸드오프시 링크 연결 지연시간을 측정하여 RCA가 적용된 non-DANv6 호스트의 핸드오프시 링크 연결 지연시간과 비교하여 성능을 평가하였다.

• 한국표면공학회지
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• 제38권5호
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• pp.202-206
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• 2005

Nitriding treatments were conducted on tool steel (SKD 61) at a temperature of $500^{\circ}C$ for 5 hr using high vacuum direct current (DC) plasma, with ammonia and argon as source gases. The structural and compositional changes produced in the nitrided layers by applying different ratios of Ar to $NH_{3}\;(n_{Ar}/n_{NH3}) were investigated using glancing x-ray diffraction (GXRD), optical microscopy, atomic force microscopy (AFM), micro-Vickers hardness testing, and pin-on-disc type tribometer. Nitriding case depths of around of $50{\mu}m$ were produced, varying slightly with different ratios of $n_{Ar}/n_{NH3}. It was found that the specimen surface hardness was 1150 Hv with $n_{Ar}/n_{NH3}=1, increasing to a maximum value of 1500 Hv with $n_{Ar}/n_{NH3}=5. With a further increase in ratio to $n_{Ar}/n_{NH3}=10, the surface hardness of the specimen reduced slightly to a value of 1370 Hv. These phenomena were caused by changes of the crystallographic structure of the nitride layers, i.e the $\gamma'-Fe_{4}N$ phase only was observed in the sample treated with $n_{Ar}/n_{NH3}$=1, and the intensity of the $\gamma'-Fe_{4}N$ phase were reduced but new phase of $\varepsilon'-Fe_{3}N$, which was known as a high hardness, with increasing $n_{Ar}/n_{NH3}. Also, the relative weight loss of counterface of the pin-on-disc with unnitrided steel was 0.2. And that of nitrided steel at a gas mixture ($n_{Ar}/n_{NH3}) of 1, 5, 7, and 10 was 0.4, 0.7, 0.6, and 0.5 mg, respectively. This means that the wear resistance of the nitrided samples could be increased by a factor of 2 at least than that of unnitrided steel.

• 한국재료학회지
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• 제15권8호
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• pp.518-520
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• 2005

Effects of the $O_2/Ar$ flow ratio in the sputtering process on the crystallinity, surface roughness, carrier concentration, carrier mobility, and optical properties of Al-doped ZnO thin films deposited on sapphire (001) substrates by RF magnetron sputtering were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM of the (002) XRD intensity peak for the $O_2/Ar$ flow ratio of 0.5. The (101)peak also appeared and the degree of preferred orientation decreased as the $O_2/Ar$ flow ratio increased from 0.5 to 1.0. AFM analysis results showed that the surface roughness was lowest at the $O_2/Ar$ flow ratio of 0.5 and tended to increase owing to the increase of the grain size as the $O_2/Ar$ flow ratio increased further. According to the Hall measurement results the carrier concentration and carrier mobility of the fan decreased and thus the resistivity increased as the $O_2/Ar$ flow ratio increased. The transmittance of the ZnO:Al film deposited on the glass substrate was characteristic of a standing wave. The transmittance increased as the $O_2/Ar$ flow ratio in-RF magnetron sputtering increased up to 0.5. Considering the effects of the $O_2/Ar$ flow ratio on the surface roughness, electrical resistivity and transmittance properties of the ZnO:Al film the optimum $O_2/Ar$ flow ratio was 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.

• 자원리싸이클링
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• 제25권3호
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• pp.49-54
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• 2016

본 연구에서는, 아크 플라즈마 정련을 이용하여 지르콘샌드($ZrSiO_4$)를 지르코니아($ZrO_2$)와 실리카($SiO_2$)로 분리하였다. 실리카를 마이크로웨이브 침출을 통해 제거하고 고순도의 지르코니아를 얻었다. 플라즈마 퓨전은 두 가지 공정을 순차적으로 진행하였다. Ar 100% 분위기에서 환원 공정을 거친 후, Ar-$H_2$ 혼합 가스를 통해 정련과정을 거쳤다. 진공 챔버 내에서 냉각 후 지르코니아와 실리카로 이루어진 고상을 얻었다. 마이크로웨이브 침출을 위해 $240^{\circ}C$, 20% 황산용액을 사용하였다. 분석 결과 고순도(98.6%)의 지르코니아를 얻을 수 있었다.

• 대한전자공학회논문지TC
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• 제43권2호
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• pp.39-43
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• 2006

본 논문은 잡음이 존재하는 미지 시스템 출력 신호의 3차 통계치인 cumulant를 이용한 AR 식별에 관한 것이다. 미지 시스템 식별을 위한 알고리즘에서는 Parametric Modeling 기법중에서 Global Convergence 보장 및 시스템의 진폭과 위상 정보를 모두 표현할 수 있는 Cumulant를 이용한 AR (Auto Regressive) 식별 방법을 적용하였다. 식별 과정에서 미지 시스템을 하나의 AR 시스템으로 간주하였고 입력 신호를 발생하여 이를 통과시킨 후 잡음이 부가된 출력 신호를 얻어 이를 이용하였다. 신호대 잡음비의 변화에따른 AR 시스템의 식별을 수행한 결과 원래의 시스템 출력치와 유사한 양호한 식별 결과를 얻을 수 있었고 극점이 z 변환의 단위원내에 존재함을 확인하였다.

• 한국BIM학회 논문집
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• 제12권4호
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• pp.1-18
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• 2022

New Fabrication Facility (FAB) construction is performed with Building Information Modeling (BIM) based design. The BIM design data keep updated during the FAB construction. To improve fast-track construction management, a Fabrication Facility Augmented Reality (FABAR) was developed. This study introduces a FABAR system development process and shows performance evaluation results of the FABAR prototype system. The FABAR is implemented with three major modules: Augmented Reality (AR) visualization unit (Room-box) to transfer big BIM data to AR data, AR registration and tracking unit to match AR with real scape and to keep AR coordination in real, and AR data management unit to enhance usability. The prototype performance results were as follows: visualization of design BIM data via AR within 24 hours, precise AR registration and tracking registration, and appropriate usability to support FAB construction management at site. The results indicate that the FABAR is applicable for FAB construction management. Especially, the BIM data transformation method using Room-box in this study signifies a new construction management approach using fluctuating BIM design data in the fast track construction condition.

• 한국결정성장학회지
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• 제22권3호
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• pp.122-126
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• 2012

$Al_2O_3$ 2 wt%가 도핑 된 ZnO(AZO) 타겟으로RF 스퍼터링 장비를 사용하여 $H_2/(Ar+H_2)$ 가스 비율에 따른 AZO 박막을 증착 후, 이들 박막의 특성을 조사하였다. AZO 박막은 $200^{\circ}C$, $2{\times}10^{-2}$ 공정조건에서 $H_2/(Ar+H_2)$ 가스 비율을 변화시키면서 증착하였다. AZO박막증착 중 수소가스의 첨가는 박막의 특성에 영향을 미쳤다. $H_2/(Ar+H_2)$ 가스 비율이 2.5 %일 때 비 저항(${\sim}9.21{\times}10^{-4}\;{\Omega}cm$)과 전자 이동도(${\sim}17.8\;cm^2/Vs$)는 각각 최소값과 최대값을 나타내었다. $H_2/(Ar+H_2)$ 가스 비율이 2.5 % 이상일 때는 $H_2/(Ar+H_2)$ 가스 비율이 증가할수록 비저항은 점차로 증가하였고 전자 이동도는 점차적으로 감소하였다. 전자 운반자 농도는 $H_2/(Ar+H_2)$ 가스 비율이 증가함에 따라 0 %에서 7.5 %까지 점차로 증가하였다. $H_2/(Ar+H_2)$ 가스 비율에 따라 증착된 박막의 가시광선 파장 범위에서 평균 광 투과도는 90 % 이상이었고 성장방향은 [002]이었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.26-29
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• 2001

$SrBi_2Ta_2O_{9}$ thin films were etched at high-density $Cl_2/CF_4/Ar$ in inductively coupled plasma system. The etching of SBT thin films in $Cl_2/CF_4/Ar$ were chemically assisted reactive ion etching. The maximum etch rate was 1300 $\AA$/min at 900W in $Cl_2(20)/CF_4(20)/Ar(80)$. As rf power increase, radicals (F, Cl) and ion(Ar) increase. The influence of plasma induced damage during etching process was investigated in terms of the surface morphology and th phase of X-ray diffraction. The chemical residue was investigated with secondary ion mass sperometry.