• 제목/요약/키워드: AR parameter

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Non-convex penalized estimation for the AR process

  • Na, Okyoung;Kwon, Sunghoon
    • Communications for Statistical Applications and Methods
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    • 제25권5호
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    • pp.453-470
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    • 2018
  • We study how to distinguish the parameters of the sparse autoregressive (AR) process from zero using a non-convex penalized estimation. A class of non-convex penalties are considered that include the smoothly clipped absolute deviation and minimax concave penalties as special examples. We prove that the penalized estimators achieve some standard theoretical properties such as weak and strong oracle properties which have been proved in sparse linear regression framework. The results hold when the maximal order of the AR process increases to infinity and the minimal size of true non-zero parameters decreases toward zero as the sample size increases. Further, we construct a practical method to select tuning parameters using generalized information criterion, of which the minimizer asymptotically recovers the best theoretical non-penalized estimator of the sparse AR process. Simulation studies are given to confirm the theoretical results.

AR(1) 모형에서 분산변화점의 탐지절차 (A detection procedure for a variance change points in AR(1) models)

  • 류귀열;조신섭
    • 응용통계연구
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    • 제1권1호
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    • pp.57-67
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    • 1987
  • 일반적으로 시계열 자료의 분석은 시간에 대한 모수들의 정상성가정(stationary assumption)하에서 이루어지고 있다. 본 논문에서는 예측하기 힘든 시점에서 분산들이 변화할 수 있는 AR(1) 모형에서 분산의 변화점(variance ahange point)을 추정하는 방법을 제안했으며 모의자료 및 실제자료를 이용하여 다른 방법들과 비교하여 보았다.

Dry etching of ZnO thin film using a $CF_4$ mixed by Ar

  • Kim, Do-Young;Kim, Hyung-Jun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1504-1507
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    • 2009
  • In this paper, the etching behavior of ZnO in $CF_4$ plasma mixed Ar was investigated. Previously, the etch rate in $CF_4$/Ar plasma was reported that it is slower than that in Cl containing plasma. But, plasma included Cl atom can produce the by-product such as $ZnCl_2$. In order to solve this film contamination, no Cl containing etching gas is required. We controlled the etching parameter such as source power, substrate bias power, and $CF_4$/Ar gas ratio to acquire the fast etch rate using a ICP etcher. We accomplished the etching rate of 144.85 nm/min with the substrate bias power of 200W. As the energetic fluorine atoms were bonded with Zinc atoms, the fluoride zinc crystal ($ZnF_2$) was observed by X-ray photoelectron spectroscopy (XPS).

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$SiH_4$+Ar혼합기체의 전자군 파라미터 해석 (The analysis on the electron swarm parameter in $SiH_4$+Ar mixtures)

  • 성낙진;김상남
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2002년도 학술대회 논문집 전문대학교육위원
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    • pp.106-109
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    • 2002
  • This paper calculates and gives the analysis of electron swarm transport coefficients as described electric conductive characteristics of pure Ar, pure $SiH_4$, Ar + $SiH_4$ mixture gases ($SiH_4$--0.5%, 2.5%, 5%) over the range of E/N =0.01${\sim}$300[Td]. P=0.1, 1, 5.0[Torr] by Monte Carlo the Backward prolongation method of the Boltzmann equation using computer simulation without using expensive equipment. The results have been obtained by using the electron collision cross sections by TOF. PT.SST sampling, compared with the experimental data determined by the other author. It also proved the reliability of the electron collision cross sections and shows the practical values of computer simulation.

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Ar-Kr 혼합가스를 이용한 OLED용 Al 전극 제작 (Preparation of Al electrode with Ar-Kr gas mixture for OLED application)

  • 김상모;장경욱;이원재;김경환
    • 반도체디스플레이기술학회지
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    • 제6권4호
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    • pp.11-15
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    • 2007
  • As preparing electrode for the OLED with the sputtering process, in order to be lower damage of the bottom organic layer and increase the life-time of the OLED, we prepared Al electrode for that by using Facing Targets Sputtering (FTS) system. Al electrode directly deposited on the cell (LiF/EML/HTL/Bottom electrode). Deposition condition was the working gas (Ar, Kr and Ar+Kr) and working gas pressure (1 and 6 mTorr). The film thickness and I-V curve of Al/cell were evaluated by a $\acute{a}$-step profiler and a semiconductor parameter (HP4156A) measurement. The thin film surface image was observed by a Atomic Force Microscope (AFM). In result, in comparison with about 11 [V] of the turn-on voltage of Al/cell with using the pure Ar gas, when Al thin film was deposited using the Ar-Kr mixture gas, the surface morphology was improved in some region and the turn-on voltage of Al/cell could be decreased to about 7 [V].

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마그네트론 스퍼터를 이용한 Ar 가스 유량 조절에 따른 GZO의 특성 변화 (Effect of Ar Flow Ratio on the Characteristics of Ga-Doped ZnO Grown by RF Magnetron Sputtering)

  • 정영진;이승진;손창식
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2011년도 추계학술대회 초록집
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    • pp.62.1-62.1
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    • 2011
  • The structural, optical, and electrical properties of Ga-doped ZnO (GZO) thin films on glass substrates grown by radio-frequency(RF) magnetron sputtering were investigated. The flow ratio of Ar was varied as a deposition parameter for growing high-quality GZO thin films. The structural properties and surface morphologies of GZO were characterized by the X-ray diffraction. To analyze the optical properties of GZO, the optical absorbance was measured in the wavelength range of 300-1100 nm by using UV-VIS spectrophotometer. The optical transmittance, absorption coefficient, and optical bandgap energy of GZO thin films were calculated from the measured data. The crystallinity of GZO thin films is improved and the bandgap energy increases from 3.08 to 3.23eV with the increasing Ar flow ratio from 10 to 100 sccm. The average transmittance of the films is over 88% in the visible range. The lowest resistivity of the GZO is $6.215{\times}10^{-4}{\Omega}{\cdot}cm$ and the hall mobility increases with the increasing Ar flow ratio. We can optimize the characteristics of GZO as a transparent electrode for thin film solar cells by controlling Ar flow ratio during deposition process.

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유체 시뮬레이션을 이용한 유도결합 Ar/CH4 플라즈마의 특성 분석 (Characterization of Inductively Coupled Ar/CH4 Plasma using the Fluid Simulation)

  • 차주홍;이호준
    • 전기학회논문지
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    • 제65권8호
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    • pp.1376-1382
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    • 2016
  • The discharge characteristics of inductively coupled $Ar/CH_4$ plasma were investigated by fluid simulation. The inductively coupled plasma source driven by 13.56 Mhz was prepared. Properties of $Ar/CH_4$ plasma source are investigated by fluid simulation including Navier-Stokes equations. The schematics diagram of inductively coupled plasma was designed as the two dimensional axial symmetry structure. Sixty six kinds of chemical reactions were used in plasma simulation. And the Lennard Jones parameter and the ion mobility for each ion were used in the calculations. Velocity magnitude, dynamic viscosity and kinetic viscosity were investigated by using the fluid equations. $Ar/CH_4$ plasma simulation results showed that the number of hydrocarbon radical is lowest at the vicinity of gas feeding line due to high flow velocity. When the input power density was supplied as $0.07W/cm^3$, CH radical density qualitatively follows the electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density.

Asymetrically reweighted penalized least squares에서 최적의 평활화 매개변수를 위한 결정함수 (Decision function for optimal smoothing parameter of asymmetrically reweighted penalized least squares)

  • 박아론;박준규;고대영;김순금;백성준
    • 한국산학기술학회논문지
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    • 제20권3호
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    • pp.500-506
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    • 2019
  • 본 연구에서는 arPLS(asymmetrically reweighted penalized least squares) 방법에서 분광신호의 길이와 차수를 이용한 최적의 평활화 매개변수를 위한 결정함수를 제안한다. 분광신호의 기준선 보정은 분석 시스템의 성능을 좌우하는 매우 중요한 과정으로 많은 경우에 육안 검사로 매개변수를 선택하여 추정한다. 이 과정은 매우 주관적이고 특히 대량의 데이터인 경우 지루한 작업을 동반하므로 좋은 분석 결과를 보장하기 어렵다. 이러한 이유로 기준선 보정에서 최적의 매개변수를 결정하기 위한 객관적인 방법이 필요하다. 제안한 결정함수는 기준선 보정에 사용 가능한 매개변수 범위의 중앙값이 신호의 길이가 길어질수록 증가하고, 신호의 차수가 작아질수록 감소하는 관계를 정리하여 모델링하였다. 모의실험 데이터는 신호의 길이 7가지에 대해 조합한 분석신호 4가지와 선형 기준선과 2차, 3차, 4차 곡선 기준선을 각각 더하여 모두 112개를 생성하였다. 모의실험 데이터와 실제 라만 분광신호를 이용한 실험에서 제안한 결정함수의 평활화 매개변수가 기준선 보정에 효과적으로 적용될 수 있음을 확인하였다.

스펙트럼 추정을 위한 근사 과결정 방식 (Approximate Overdetermined Method for Spectral Estimation)

  • 이철희;정찬수;양흥석
    • 대한전기학회논문지
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    • 제37권4호
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    • pp.232-239
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    • 1988
  • The approximate overdetermined method is proposed for high resolution spectral estimation in case of short data record length or narrow band signal. And a new recursive AR parameter estimation is derived in the form of fast algorithm. For ARMA spectral estimation, two stage procedure is used in estimating ARMA parameters. First AR parameters are estimated by using the modified Yule-Walker equations, and then MA parameters are implicitly estimated by estimating numerator spectral(NS) coefficients.

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Ultimate strength of simply supported plate with opening under uniaxial compression

  • Yu, Chang-Li;Lee, Joo-Sung
    • International Journal of Naval Architecture and Ocean Engineering
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    • 제4권4호
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    • pp.423-436
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    • 2012
  • Unstiffened plates are integral part of all kinds of structures such as ship and offshore oil platforms. Openings are unavoidable and absolutely reduce the ultimate strength of structures. In this study, the finite element analysis package, ABAQUS, is used to analyze the behavior of unstiffened plate with rectangular opening. The rectangular opening form is divided into two cases. In case1, opening depth is constant, but opening width is varied. Meanwhile, in case2 opening width is fixed and opening depth is varied. Besides, for the two different form opening, the effect of plate slenderness parameter (${\beta}$), opening area ratio (AR) and opening position ratio (PR) on the ultimate strength of plate with opening under axial compression are presented. It has been found that the ultimate strength of plate ofcase1is much more sensitive to the plate slenderness parameter (${\beta}$) and opening area ratio (AR) than that of case2. However, for case1, opening position (PR) almost has no effect on the ultimate strength, whereas, regardingcase2, the influence of opening position (PR) depends on the plate slenderness parameter (${\beta}$). Based on nonlinear regression analysis, three design formulae are not only developed but also approved reasonably for the practical engineering design.