• Communications for Statistical Applications and Methods
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• v.25 no.5
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• pp.453-470
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• 2018

We study how to distinguish the parameters of the sparse autoregressive (AR) process from zero using a non-convex penalized estimation. A class of non-convex penalties are considered that include the smoothly clipped absolute deviation and minimax concave penalties as special examples. We prove that the penalized estimators achieve some standard theoretical properties such as weak and strong oracle properties which have been proved in sparse linear regression framework. The results hold when the maximal order of the AR process increases to infinity and the minimal size of true non-zero parameters decreases toward zero as the sample size increases. Further, we construct a practical method to select tuning parameters using generalized information criterion, of which the minimizer asymptotically recovers the best theoretical non-penalized estimator of the sparse AR process. Simulation studies are given to confirm the theoretical results.

• The Korean Journal of Applied Statistics
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• v.1 no.1
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• pp.57-67
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• 1987

In time series analysis, we usually require the assumption that time series are stationary. But we may often encounter time series whose parameter values subject to change. Inthis paper w propose a method which can detect the variance change point in anAR(1) model which is subjct to changesat non-predictable time points. Proposed method is compared with other methods using the simulated and real data.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1504-1507
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• 2009

In this paper, the etching behavior of ZnO in $CF_4$ plasma mixed Ar was investigated. Previously, the etch rate in $CF_4$/Ar plasma was reported that it is slower than that in Cl containing plasma. But, plasma included Cl atom can produce the by-product such as $ZnCl_2$. In order to solve this film contamination, no Cl containing etching gas is required. We controlled the etching parameter such as source power, substrate bias power, and $CF_4$/Ar gas ratio to acquire the fast etch rate using a ICP etcher. We accomplished the etching rate of 144.85 nm/min with the substrate bias power of 200W. As the energetic fluorine atoms were bonded with Zinc atoms, the fluoride zinc crystal ($ZnF_2$) was observed by X-ray photoelectron spectroscopy (XPS).

• Proceedings of the KIEE Conference
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• 2002.06a
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• pp.106-109
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• 2002

This paper calculates and gives the analysis of electron swarm transport coefficients as described electric conductive characteristics of pure Ar, pure $SiH_4$, Ar + $SiH_4$ mixture gases ($SiH_4$--0.5%, 2.5%, 5%) over the range of E/N =0.01${\sim}$300[Td]. P=0.1, 1, 5.0[Torr] by Monte Carlo the Backward prolongation method of the Boltzmann equation using computer simulation without using expensive equipment. The results have been obtained by using the electron collision cross sections by TOF. PT.SST sampling, compared with the experimental data determined by the other author. It also proved the reliability of the electron collision cross sections and shows the practical values of computer simulation.

• Journal of the Semiconductor & Display Technology
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• v.6 no.4
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• pp.11-15
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• 2007

As preparing electrode for the OLED with the sputtering process, in order to be lower damage of the bottom organic layer and increase the life-time of the OLED, we prepared Al electrode for that by using Facing Targets Sputtering (FTS) system. Al electrode directly deposited on the cell (LiF/EML/HTL/Bottom electrode). Deposition condition was the working gas (Ar, Kr and Ar+Kr) and working gas pressure (1 and 6 mTorr). The film thickness and I-V curve of Al/cell were evaluated by a $\acute{a}$-step profiler and a semiconductor parameter (HP4156A) measurement. The thin film surface image was observed by a Atomic Force Microscope (AFM). In result, in comparison with about 11 [V] of the turn-on voltage of Al/cell with using the pure Ar gas, when Al thin film was deposited using the Ar-Kr mixture gas, the surface morphology was improved in some region and the turn-on voltage of Al/cell could be decreased to about 7 [V].

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.62.1-62.1
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• 2011

The structural, optical, and electrical properties of Ga-doped ZnO (GZO) thin films on glass substrates grown by radio-frequency(RF) magnetron sputtering were investigated. The flow ratio of Ar was varied as a deposition parameter for growing high-quality GZO thin films. The structural properties and surface morphologies of GZO were characterized by the X-ray diffraction. To analyze the optical properties of GZO, the optical absorbance was measured in the wavelength range of 300-1100 nm by using UV-VIS spectrophotometer. The optical transmittance, absorption coefficient, and optical bandgap energy of GZO thin films were calculated from the measured data. The crystallinity of GZO thin films is improved and the bandgap energy increases from 3.08 to 3.23eV with the increasing Ar flow ratio from 10 to 100 sccm. The average transmittance of the films is over 88% in the visible range. The lowest resistivity of the GZO is $6.215{\times}10^{-4}{\Omega}{\cdot}cm$ and the hall mobility increases with the increasing Ar flow ratio. We can optimize the characteristics of GZO as a transparent electrode for thin film solar cells by controlling Ar flow ratio during deposition process.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.8
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• pp.1376-1382
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• 2016

The discharge characteristics of inductively coupled $Ar/CH_4$ plasma were investigated by fluid simulation. The inductively coupled plasma source driven by 13.56 Mhz was prepared. Properties of $Ar/CH_4$ plasma source are investigated by fluid simulation including Navier-Stokes equations. The schematics diagram of inductively coupled plasma was designed as the two dimensional axial symmetry structure. Sixty six kinds of chemical reactions were used in plasma simulation. And the Lennard Jones parameter and the ion mobility for each ion were used in the calculations. Velocity magnitude, dynamic viscosity and kinetic viscosity were investigated by using the fluid equations. $Ar/CH_4$ plasma simulation results showed that the number of hydrocarbon radical is lowest at the vicinity of gas feeding line due to high flow velocity. When the input power density was supplied as $0.07W/cm^3$, CH radical density qualitatively follows the electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.3
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• pp.500-506
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• 2019

In this study, we present a decision function of optimal smoothing parameter for baseline correction using Asymmetrically reweighted penalized least squares (arPLS). Baseline correction is very important due to influence on performance of spectral analysis in application of spectroscopy. Baseline is often estimated by parameter selection using visual inspection on analyte spectrum. It is a highly subjective procedure and can be tedious work especially with a large number of data. For these reasons, an objective procedure is necessary to determine optimal parameter value for baseline correction. The proposed function is defined by modeling the median value of possible parameter range as the length and order of the background signal. The median value increases as the length of the signal increases and decreases as the degree of the signal increases. The simulated data produced a total of 112 signals combined for the 7 lengths of the signal, adding analytic signals and linear and quadratic, cubic and 4th order curve baseline respectively. According to the experimental results using simulated data with linear, quadratic, cubic and 4th order curved baseline, and real Raman spectra, we confirmed that the proposed function can be effectively applied to optimal parameter selection for baseline correction using arPLS.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.37 no.4
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• pp.232-239
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• 1988

The approximate overdetermined method is proposed for high resolution spectral estimation in case of short data record length or narrow band signal. And a new recursive AR parameter estimation is derived in the form of fast algorithm. For ARMA spectral estimation, two stage procedure is used in estimating ARMA parameters. First AR parameters are estimated by using the modified Yule-Walker equations, and then MA parameters are implicitly estimated by estimating numerator spectral(NS) coefficients.

• International Journal of Naval Architecture and Ocean Engineering
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• v.4 no.4
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• pp.423-436
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• 2012

Unstiffened plates are integral part of all kinds of structures such as ship and offshore oil platforms. Openings are unavoidable and absolutely reduce the ultimate strength of structures. In this study, the finite element analysis package, ABAQUS, is used to analyze the behavior of unstiffened plate with rectangular opening. The rectangular opening form is divided into two cases. In case1, opening depth is constant, but opening width is varied. Meanwhile, in case2 opening width is fixed and opening depth is varied. Besides, for the two different form opening, the effect of plate slenderness parameter (${\beta}$), opening area ratio (AR) and opening position ratio (PR) on the ultimate strength of plate with opening under axial compression are presented. It has been found that the ultimate strength of plate ofcase1is much more sensitive to the plate slenderness parameter (${\beta}$) and opening area ratio (AR) than that of case2. However, for case1, opening position (PR) almost has no effect on the ultimate strength, whereas, regardingcase2, the influence of opening position (PR) depends on the plate slenderness parameter (${\beta}$). Based on nonlinear regression analysis, three design formulae are not only developed but also approved reasonably for the practical engineering design.