• Journal of the Korean Ceramic Society
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• v.32 no.5
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• pp.617-625
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• 1995

In order to reduce reflectance of soda-lime glass having average reflectance of 7.35% and refractive index of 1.53, single (SiO2), double (SiO2/20SiO2-80ZrO2), and triple (SiO2/ZrO2/75SiO2-25ZrO2) layers were designed and fabricated on the glass substrate by Sol-Gel method. Stble sols of SiO2-ZrO2 binary system for antireflective (AR) coatings were synthesized with tetraethyl orthosilicate (TEOS) and zirconium n-butoxide as precursors and ethylacetoacetate (EAcAc) as a chelating agent in an atmosphere environment. Films were deposited on soda-lime glass at the withdrawal rates of 3~11 cm/min using the prepared polymeric sols by dip-coating and they were heat-treated at 45$0^{\circ}C$ for 10 min to obtain homogeneous, amorphous and crack-free films. In case of SiO2-ZrO2 binary system, refractive index of film increased with an increase of ZrO2 mol%. Designed optical constant of films could be obtained through varying the withdrawal rate. In the visible region (380~780nm), reflectance was measured with UV/VIS/NIR Spectrophotometer. Average reflectances of the prepared single-layer [SiO2 (n=1.46, t=103nm)], double-layer [SiO2 (n=1.46, t=1-4nm)/20SiO2-80ZrO2 (n=1.81, t=82nm)], and triple-layer [SiO2 (n=1.46, t=104nm)/ZrO2 (n=1.90, t=80nm)/75SiO2-25ZrO2 (n=1.61, t=94 nm)] were 4.74%, 0.75% and 0.38%, respectively.

• Journal of the Korean Society of Industry Convergence
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• v.6 no.3
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• pp.253-259
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• 2003

An experimental study was performed for turbulent flow behind a circular and a square cylinder by using 2-D PIV(Particle Image Velocimetry) technique in a cylindrical tube. The Reynolds number investigated were 10,000, 30,000 and 50,000. The measuring system consists of CCD camera. Ar-ion laser, image grabber and a host computer. The mean velocity vector, time mean axial velocity, turbulent intensity and Reynolds shear stress were measured along the test tube. The results are compared each other for the circular and the square cylinder.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.39-43
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• 2001

$SiC_{x}N$_{y}$ film is deposited by electron cyclotron resonance plasma chemical vapor deposition system using $SiH_4$(5% in Ar), $CH_4$ and $N_2$. Ternary phase $SiC_{x}N$_{y}$ thin film deposited at the microwave power of 600 W and substrate temperature of 700 contains considerable amount of strong C-N bonds. Change in $CH_4$flow rate can effectively control the residual film stress, and typical surface roughness of 34.6 (rms) was obtained. Extreme]y high hardness (3952 Hv) and optical transmittance (95% at 633 nm) was achieved, which is suitable for a LIGA mask membrane application.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.503-504
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• 2008

ZnO thin films were deposited on glass and plastic substrates at different $Ar/O_2$ gas flow ratio in RF magnetron sputtering system. To investigate structural and optical properties of ZnO thin films, X-ray Diffactometer and UV-Vis Spectrometer were performed, respectively. The obtained films showed a preferred orientation the c-axis perpendicular to the substrate and transmittance above 80 % in visible range.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.1080-1083
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• 1997

Micro-stereolithography is a newly proposed technology as a means that can fabricate 3D micro-structures of free form. It makes a 3D structure by dividing the shape into many slices of relevant thickness along honzontal surfaces, hardening each layer of slice with a laser, and stacking them up to a des~red shape. Scale effect becomes important in this micro-fabrication process, d~fferently from the conventional stereolithography. To realize this micro-stereolithography technology, we developed an equipment using Ar+ laser, xyz stages, controllers and all the optic devices. Using the equipment, a number of micro-structures were successfully fabricated including a winecup of several tens of micrometers.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.222.2-222.2
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• 2014

대기압 플라즈마는 기존의 저압 플라즈마에 비해 제작이 간단하고 조작이 간편하기 때문에 응용 가능 분야가 넓다는 장점이 있지만 다양한 외부 요인으로 인한 안정성의 문제로 저압 플라즈마의 모든 응용범위를 대신하기에는 문제점이 있다. 현재 이 문제점을 해결하기 위한 연구가 활발히 진행 중에 있으며, 기판 및 유리 세정, Bio-medical, 물질 합성 등 다양한 분야에 대한 응용 연구도 진행 중에 있다. 본 연구에서는 본 연구실에서 자체 개발한 전원 장치를 이용하여 대기압 플라즈마를 발생 시켰으며, He, Ar Gas를 이용하여 PDMS 기판과 유리 기판에 표면 처리 한 후 친수성 비교 분석 실험을 실시하였다. Optical Emission Spectroscopy(OES)장치와 ICCD camera를 이용하여 플라즈마 진단과 특성 분석을 실시하였으며 Computer Numerical Control (CNC) x-y-z 3축 stage를 이용하여 플라즈마 발생을 제어함으로서 재현성을 높은 플라즈마 표면 처리 연구를 진행 하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.329.1-329.1
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• 2014

In this paper, we report electrical, optical and structural properties of Al-doped zinc oxide (AZO) thin films deposited at different substrate temperatures and pressures. The films were prepared by radio frequency (RF) magnetron sputtering on glass substrates in argon (Ar) ambient. The X-ray diffraction analysis showed that the AZO films deposited at room temperature (RT) and 20 Pa were mostly oriented along a-axis with preferred orientation along (100) direction. There was an improvement in resistivity ($3.7{\times}10^{-3}{\Omega}-cm$) transmittance (95%) at constant substrate temperature (RT) and working pressure (20 Pa) using the Hall-effect measurement system and UV-vis spectroscopy, respectively. Our results have promising applications in low-cost transparent electronics, such as the thin-film solar cells and thin-film transistors due to favourable deposition conditions. Furthermore our film deposition method offers a procedure for preparing highly oriented (100) AZO films.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.279-286
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• 2000

Magnetic field dependence of magnetization reversal in Co/Pt multilayers has been quantitatively investigated. Serial samples of Co/Pt multilayers have been prepared by dc-magnetron sputtering under various Ar pressure. Magnetization reversal was monitored by magnetization viscosity measurement and direct domain observation using a magneto-optical microscope system, and the wall-motion speed and the nucleation rate R were determined using a domain reversal model based on time-resolved domain reversal patterns. Both and R were found to be exponentially dependent on the reversing applied field. From the exponential dependencies, the activation volumes of the wall motion and nucleation could be determined based on a thermally activated relaxation model, and the wall-motion activation volume was revealed to be slightly larger than the nucleation activation volume.

• Journal of Magnetics
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• v.5 no.4
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• pp.116-119
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• 2000

Magnetic field dependence of magnetization reversal in Co/Pt multilayers was quantitatively investigated. Serial samples of Co/Pt multilayers were prepared by dc-magnetron sputtering under various Ar pressures. Magnetization reversal was monitored by magnetization viscosity measurement and direct domain observation using a magneto-optical microscope system, and the wall-motion speed V and the nucleation rate R were determined using a domain reversal model based on time-resolved domain reversal patterns. Both V and R were found to be exponentially dependent on the applied reversing field. From the exponential dependencies, the activation volumes for wall motion and nucleation could be determined, based on a thermally activated relaxation model, and the wall-motion activation volume was found to be slightly larger than the nucleation activation volume.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.82-86
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• 2021

In this study, we investigated the oxygen partial pressure effect of ITO films for electrodes of oxide-based Thin-Film Transistor (TFT). Firstly, we deposited single ITO films on the glass substrate at room temperature. ITO films were prepared at the various partial pressures of oxygen gas 0-7.4% (O₂/(Ar+O₂)). As increasing oxygen on the process of film deposition, electrical properties were improved and optical transmittance increased in the visible light range (300-800 nm). For the electrode of TFT, we fabricated a TFT device (W/L=1000/200 ㎛) with ITO films as the source and drain electrode on the silicon wafer. Except for the TFT device combined with ITO film prepared at the oxygen partial pressure ratio of 7.4%, We confirmed that TFT devices with ITO films via FTS system operated as a driving device at threshold voltage (V_th) of 4V.