• Nuclear Engineering and Technology
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• v.31 no.5
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• pp.512-521
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• 1999

A feasibility study was performed to design an epithermal neutron beam for BNCT using the neutron of 2.45 MeV on the average produced from $^2H(d,n)^3$He reaction induced by plasma focus in the z-pinch instead of the conventional accelerator-based $^3H(d, n)^4$He neutron generator. Flux and spectrum were analyzed to use these neutrons as the neutron source for BNCT. Neutronic characteristics of several candidate materials in this neutron source were investigated Using MCNP Code, and $^7LiF$ ; 40%Al + 60%$AIF_3$, and Pb Were determined as moderator, filter, and reflector in an epithermal neutron beam design for BNCT, respectively. The skin-skull-brain ellipsoidal phantom, which consists of homogeneous regions of skin-, bone-, or brain-equivalent material, was used in order to assess the dosimetric effect in brain. An epithermal neutron beam design for BNCT was proposed by the repeated work with MCNP runs, and the dosimetric properties (AD, AR, ADDR, and Dose Components) calculated within the phantom showed that the neutron beam designed in this work is effective in tumor therapy. If the neutron source flux is high enough using the z-pinch plasma, BNCT using the neutron source produced from $^2H(d,n)^3$He reaction will be very feasible.

• Korean Journal of Materials Research
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• v.8 no.8
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• pp.737-743
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• 1998

The synthesis of $SrAI_2O_4:Eu^{2+}$ phosphor and its properties of both photoluminescence and long-phosphorescent were investigated as a function of sintering condition. Single phase of $SrAl_2O_4$ was obtained by sintering the mixtures of $SrCO_3$, $Eu_2O_3$, $AI_2O_34 and 3wt% $B_2O_3$ powders over 100$0^{\circ}C$ in Ar/H2 atmosphere. The optimum sintering condition for the long-phosphorescent phosphor of $SrAI_2O_4:Eu^{2+}$ was found at 130$0^{\circ}C$ for 3hours. The PL emission spectrum of $SrAI_2O_4:Eu^{2+}$ shows a maximum peak intensity at 520nm(2.384eV) with a broad emission extending from 450 to 650nm which resulted from the $4f^65d^1$$\rightarrow$$4f^7$ transition of $Eu^{+2}$ under 360nm exitation. Monitored at 520nm. the excita¬tion spectrum of $SrAI_2O_4:Eu^{2+}$ exhibits a maximum peak intensity at 360nm (3.44eV) with a broad absorption band extending from 250 to 480nm.

• Tuberculosis and Respiratory Diseases
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• v.74 no.2
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• pp.63-69
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• 2013

Background: Aiming to improve outcome of lung transplantation (LTx) patients, we reviewed risk factors and treatment practices for the LTx recipients who experienced respiratory infection in the late post-LTx period (>1 month after LTx). Methods: We analyzed the clinical data of 48 recipients and donors from 61 LTx, who experienced late respiratory infections. Late respiratory infections were classified according to the etiology, time of occurrence, and frequency of donor-to-host transmission or colonization of the recipient prior to transplantation. Results: During the period of observation, 42 episodes of respiratory infections occurred. The organisms most frequently involved were gram (-) bacteria: Acinetobacter baumannii (n=13, 31.0%), Pseudomonas aeruginosa (n=7, 16.7%), and Klebsiella pneumoniae (n=4, 10.0%). Among the 42 episodes recorded, 14 occurred in the late post-LTx period. These were bacterial (n=6, 42.9%), fungal (n=2, 14.3%), viral (n=4, 28.5%), and mycobacterial (n=2, 14.3%) infections. Of 6 bacterial infections, 2 were from multidrug-resistant (MDR) A. baumannii and one from each of MDR P. aeruginosa, extended spectrum ${\beta}$-lactamase (+) K. pneumoniae, methicillin-resistant Staphylococcus aureus and Streptococcus pneumoniae. Infection-related death occurred in 6 of the 14 episodes (43%). Conclusion: Although the frequency of respiratory infection decreased sharply in the late post-LTx period, respiratory infection was still a major cause of mortality. Gram (-) MDR bacteria were the agents most commonly identified in these infections.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.2087-2089
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• 2003

The presence of narrowband interference (NBI) in Direct-sequence code division multiple access (DS/CDMA) systems is an inevitable problem when the interference is strong enough. The improvement in the system performance employs by adaptive narrowband interference suppression techniques. Basically there have been two types of method for narrowband interference suppression estimator/subtracter approaches and transform domain approaches. In this paper the focus is on the type of estimator/subtracter approaches. However, the binary direct sequence (DS) signal, that acts as noise in the prediction process is highly non-Gaussian. The case of a Gaussian interferer with known in an autoregressive (AR) signal or a digital signal and also in a sinusoidal signal (Tone) that included in is paper. The proposed NBI suppression is presence in an adaptive IIR notch filter for lattice structure and more powerful by using a variable step-size algorithm. The simulation results show that the proposed algorithm can significantly increase the convergence rate and improved system performance when compare with adaptive least mean square algorithm (LMS).

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.90-94
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• 2009

The development of low-k materials is essential for modern semiconductor processes to reduce the cross-talk, signal delay and capacitance between multiple layers. The effect of the $CH_4$ concentration on the formation of SiOC(-H) films and their dielectric characteristics were investigated. SiOC(-H) thin films were deposited on Si(100)/$SiO_2$/Ti/Pt substrates by plasma-enhanced chemical vapor deposition (PECVD) with $SiH_4$, $CO_2$ and $CH_4$ gas mixtures. After the deposition, the SiOC(-H) thin films were annealed in an Ar atmosphere using rapid thermal annealing (RTA) for 30min. The electrical properties of the SiOC(-H) films were then measured using an impedance analyzer. The dielectric constant decreased as the $CH_4$ concentration of low-k SiOC(-H) thin film increased. The decrease in the dielectric constant was explained in terms of the decrease of the ionic polarization due to the increase of the relative carbon content. The spectrum via Fourier transform infrared (FT-IR) spectroscopy showed a variety of bonding configurations, including Si-O-Si, H-Si-O, Si-$(CH_3)_2$, Si-$CH_3$ and $CH_x$ in the absorbance mode over the range from 650 to $4000\;cm^{-1}$. The results showed that dielectric properties with different $CH_4$ concentrations are closely related to the (Si-$CH_3$)/[(Si-$CH_3$)+(Si-O)] ratio.

• Proceedings of the KIEE Conference
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• 1990.11a
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• pp.85-87
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• 1990

Silicon nitride film was deposited on a silicon wafer using a laser CVD(LCVD) technique, which is based on direct photolysis of $SiH_4/NH_3$ gas mixture by ArF laser beam(${\lambda}=193\;nm$). The refractive index of deposited SiN film is 1.9 at the temperature of $300^{\circ}C$, pressure of 5 torr. The breakdown field strength of LCVD SiN film was 10MV/cm. In IR spectrum, the absorption peak of Si-H, N-H, and Si-N is detected and it is shown that hydrogen is included in SiN film. From analysis of absorption band. it is calculated that density of Si-H, N-H bond is higher than $5{\times}10^{22}cm^{-3}$. LCVD MIS capacitor and PECVD MIS capacitor have injection-type hysteresis but it is known that hysteresis loss of LCVD MIS capacitor is smaller than that of PECVD MIS capacitor. It means that Interface state density of LCVD capacitor is smaller than that of PECVD capacitor. In addition, the flatband voltage($V_{FB}$) of LCVD is smaller than that of PECVD capacitor. And it means that fixed charged density($Q_{FIX}$) of LCVD capacitor is smaller than that of PECVD MIS capacitor.

• Journal of the Korean Ceramic Society
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• v.45 no.8
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• pp.477-481
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• 2008

$Eu^{2+}$ and $Dy^{3+}$ co-doped strontium aluminate, $SrAl_2O_4$ long phosphorescent phoshor was fabricated and its photoluminescence was characterized. The phosphor, $SrAl_2O_4:Eu^{2+},Dy^{3+}$ was synthesized by a coprecipitation in which metal salts of $Sr(NO_3)_2$, $Al(NO_3)_3{\cdot}9H_2O$, were dissolved in $(NH_4)_2CO_3$ solution with adding $Eu(NO_3)_3{\cdot}5H_2O$ and $Dy(NO_3)_3{\cdot}5H_2O$ as a activator and co-activator, respectively. The coprecipitated products were separated from solution, washed, and dried in a vacuum dry oven. The dried powders were then mixed with 3 wt% $B_2O_3$ as a flux and heated at $800{\sim}1400^{\circ}C$ for 3 h under the reducing ambient atmosphere of 95%Ar+$5%H_2$ gases. For the synthesized $SrAl_2O_4:Eu^{2+},Dy^{3+}$, properties of photoluminescence such as emission, excitation and decay time were examined. The emission intensity increased as the annealing temperature increased and showed a maximum peak intensity at 510 nm with a broad band from $400{\sim}650\;nm$. Monitored at 520 nm, the excitation spectrum showed a maximum peak intensity at $315{\sim}320\;nm$ wavelength with a broad band from $200{\sim}500\;nm$ wavelength. The decay time of $SrAl_2O_4:Eu^{2+},Dy^{3+}$ increased as the annealing temperature increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.9
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• pp.589-593
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• 2014

AlNO multi-layer thin films on aluminum substrates were prepared by DC reactive magnetron sputtering method. $Al_2O_3$/AlNO(LMVF)/AlNO(HMVF)/Al/substrate of 4 multi-layer has been prepared in an Ar and ($N_2+O_2$) gas mixture, and $Al_2O_3$ of top layer is anti-reflection layer on double AlNO(LMVF)/AlNO(HMVF) layers and Al metal of infrared reflection layer. In this study, the roughness and surface properties of AlNO thin films were estimated by field emission scanning electron microscopy(FE-SEM). The grain size of AlNO thin films increased with increasing sputtering power. The composition of thin films has been systematically investigated using electron probe microanalysis(EPMA). The optical properties with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 200~1,500 nm. The absorptance of AlNO films shows the increasing trend with swelling ($N_2+O_2$) gas mixture in HMVF and LMVF deposition. The excellent optical performance showed above 98% of absorptance in visible wavelength region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.533-538
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• 2001

The ZnSe sample grown by chemical bath deposition (CBD) method were annealed in Ar gas at 450$^{\circ}C$ Using extrapolation method of X-ray diffraction pattern, it was found to have zinc blend structure whose lattice parameter a$\_$o/ was 5.6687 ${\AA}$. From Hall effect, the mobility was likely to be decreased by impurity scattering at temperature range from 10 K to 150 K and by lattice scattering at temperature range from 150 K to 29 3K. The band gap given by the transmission edge changed from 2.7005 eV at 293 K to 2.8739 eV at 10 K. Comparing photocurrent peak position with transmission edge, we could find that photocurrent peaks due to excition electrons from valence band, $\Gamma$$\_$8/ and $\Gamma$$\_$7/ to conduction band $\Gamma$$\_$6/ were observed at photocurrent spectrum. From the photocurrent spectra by illumination of polarized light on the ZnSe thin film, we have found that values of spin orbit coupling splitting Δso is 0.0981 eV. From the PL spectra at 10 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0612 eV and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be 0.0172 eV, 0.0310 eV, respectively.

• Nuclear Engineering and Technology
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• v.52 no.6
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• pp.1277-1281
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• 2020

A novel ceramic Gas Electron Multiplier (GEM) has been developed to meet the demand of high counting rate for the neutron detection which is an alternative to ³He-based detector at China Spallation Neutron Source (CSNS). An experiment was performed to measure the neutron transmittance of ceramic-GEM and FR4-GEM at the small angle neutron scattering (SANS) instrument. The result showed the ceramic-GEM has higher transmittance and less self-scattering especially for cold neutrons. One single ceramic GEM could give a gain of 10²-10⁴ in the mixture gas of Ar and CO₂ (90%:10%) and its energy resolution was about 27.7% by using ⁵⁵Fe X ray of 5.9 keV. A prototype has been developed in order to investigate the performances of the ceramic GEM-based neutron detector. Several neutron beam tests, including detection efficiency, spatial resolution, two-dimensional imaging, and wavelength spectrum, were carried out at CSNS and China Mianyang Research Reactor (CMRR). The results show that the ceramic GEM-based neutron detector is a good candidate to measure the high intensity neutrons.