• Korean Journal of Clinical Laboratory Science
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• v.53 no.1
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• pp.88-95
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• 2021

Aucklandia lappa Decne., a traditional herbal medicine, has been used to treat various diseases, including asthma, coughs, rheumatism, and diarrhea. In the present study, the effects of the oral administration of Aucklandia lappa Decne. extract on hair growth was investigated in hair-removed mice. A 70% ethanol extract of Aucklandia lappa Decne. (ALD) was prepared, and the extraction yield and total polyphenol content of ALD were measured as 27.30±0.01 and 28.39 mg gallic acid equivalent (GAE)/g, respectively. The oral administration of ALD to hair-removed CL57BL/6 mice for six weeks had no significant effects on food intake and body weight changes. Biochemical and histological examinations also showed that the oral administration of ALD for six weeks had no significant effect on the liver and kidney functions. On the other hand, hair growth was significantly higher in the ALD group than the control group and the Pancidil group (positive control). In addition, the number of hair follicles and the degree of collagen production in the dermis were significantly higher in the ALD group than in the control and pancidil groups. These results suggest that ALD is a potential source of nutricosmetics with hair growth-promoting effects.

• Journal of Surface Science and Engineering
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• v.55 no.6
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• pp.328-341
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• 2022

Area selective atomic layer deposition (AS-ALD) is a bottom-up nanopattern fabrication method that can grow the ALD films only on the desired substrate areas without using photolithography and etching processes. Particularly, AS-ALD has attracted great attention in the semiconductor manufacturing process due to its advantage in reducing edge placement error by fabricating self-aligned patterns. In this paper, the basic principles and characteristics of AS-ALD are described. In addition, various approaches for achieving AS-ALD with excellent selectivity were comprehensively reviewed. Finally, the technology development to overcome the selectivity limit of AS-ALD was introduced along with future prospects.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.110-115
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• 2007

A plasma enhanced atomic layer deposition(PEALD) system has been constructed adopting an inductively coupled plasma(ICP) source with an ALD system, and its plasma generation was carried out. Cobalt thin films were deposited on a p-type Si(100) wafer at $230^{\circ}C$. $Co_{2}(CO)_{6}$ was used as a cobalt precursor, $NH_{3}$ as a reactant, and Ar as a carrier and purge gas. The properties of the thin films were investigated using field emission scanning electron microscopy(FESEM) and auger electron spectroscopy(AES). Large amounts of impurities were found in both the ALD film and the PEALD film, however, the amount of impurities in the PEALD film was reduced to about 50 % compared to that in the ALD film. It was found that $NH_{3}$ plasma, very effectively, induces the reaction with carbon in a cobalt precursor.

• Journal of Ceramic Processing Research
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• v.19 no.6
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• pp.525-529
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• 2018

The antireflective (AR) coated poly methyl methacrylate (PMMA) substrate was deposited by atomic layer deposition (ALD) on a self-assembled monolayer (SAM) to improve hydrophobicity and mechano-chemical properties of organic thin films. The water contact angles (WCA) were tested to characterize the surface wettability of SAM octadecyltrichlorosilane (OTS) films. Results showed that a contact angle of $105.9^{\circ}$ was obtained for the SAM films with an annealing process, and the highest WCA of $120^{\circ}$ was achieved for the films prepared by the SAM and ALD multi-process. The surface morphology of the SAM films with different assembly times and varying number of ALD cycles was obtained by atomic force microscopy (AFM). The maximum light transmittance for the SAM films on the PMMA substrate reached 99.9% at a wavelength of 450 nm. It was found that the SAM surfaces were not affected at all by the ALD process.

• IMMUNE NETWORK
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• v.10 no.6
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• pp.181-187
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• 2010

Excessive alcohol consumption is one of the critical causative factors leading to alcoholic liver disease (ALD). ALD is characterized by a wide spectrum of liver damage, ranging from simple uncomplicated liver steatosis (fatty liver) to steatohepatitis and liver fibrosis/cirrhosis. It has been believed that the obvious underlying cause for ALD is due to hepatocyte death induced by alcohol itself. However, recent sparkling studies have shown that diverse immune responses contribute to ALD because liver is enriched with numerous immune cells. Especially, a line of evidence has suggested that innate immune cells such as Kupffer cells and natural killer (NK)/NKT cells are significantly involved in the pathogenesis of ALD via production of pro-inflammatory cytokines and other mediators. Indeed, more interestingly, hepatic stellate cells (HSCs), known as a major cell inducing liver steatosis and fibrosis, can be killed by liver NK cells, which could be suppressed by chronic alcohol consumption. In this review, with the view of liver as predominant innate immune organ, we describe the pathogenesis of ALD in which what roles of innate immune cells are and how they are interacting with HSCs.

• Journal of the Semiconductor & Display Technology
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• v.15 no.4
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• pp.33-35
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• 2016

In this study, a new plasma source was used in the ALD process. Line type plasma sources were analyzed by electric and magnetic field simulation. And the results were compared with plasma density and electron temperature measurement results. As a result, the results of the computer simulation and the diagnosis results of plasma density and electron temperature showed similar tendency. At this time, the plasma uniformity is 95.6 %. $Al_2O_3$ thin film was coated on 6 inch Si-wafer, using this plasma source. The uniformity of the thin film was more than 98% and the thin film growth rate was 0.13 nm/cycle.

• Journal of the Korean Institute of Gas
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• v.26 no.5
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• pp.22-27
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• 2022

Atomic Layer Deposition (ALD) is a facility that deposits an atomic layer on a wafer by causing a chemical reaction after decomposition using heat or plasma by inputting two or more gases during the semiconductor process. The main gas used at this time is NH₃ (Ammonia). NH₃ has a relatively narrow explosive range with an upper limit (UFL) of 33.6% and a lower limit (LEL) of 15%, but it can explode if a large amount suddenly gathers in one place. It is Velocity and fatal if inhaled or in contact with the skin. NH₃ (Ammonia) of ALD (Atomic Layer Deposition) facility is supplied to the chamber through the gas inlet and discharged after the reaction.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.159-165
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• 2002

The physical properties of the TiN films deposited by ALD using $TiCl_4$and $NH_3$have been investigated. The TiN deposition rate is ~0.6 $\AA$ under an optimum deposition condition and the resistivity of the TiN films is 200~350 $\mu\Omega$cm . According to the XRD analysis results TiN films are crystallized in the ALD process window. AES analysis results show that the Cl impurity concentration in the TiN films is lower than 1 at% and that the atomic ratio of the TiN films is 1:1. Also it is found by SEM observation that the step coverage of the TiN films on which TiN films with trenches the aspect ratio of which is 10:1 is excellent.

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.430-437
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• 2016

Aluminum oxide ($Al_2O_3$) thin films were grown by atomic layer deposition (ALD) using a new Al metalorganic precursor, dimethyl aluminum sec-butoxide ($C_{12}H_{30}Al_2O_2$), and water vapor ($H_2O$) as the reactant at deposition temperatures ranging from 150 to $300^{\circ}C$. The ALD process showed typical self-limited film growth with precursor and reactant pulsing time at $250^{\circ}C$; the growth rate was 0.095 nm/cycle, with no incubation cycle. This is relatively lower and more controllable than the growth rate in the typical $ALD-Al_2O_3$ process, which uses trimethyl aluminum (TMA) and shows a growth rate of 0.11 nm/cycle. The as-deposited $ALD-Al_2O_3$ film was amorphous; X-ray diffraction and transmission electron microscopy confirmed that its amorphous state was maintained even after annealing at $1000^{\circ}C$. The refractive index of the $ALD-Al_2O_3$ films ranged from 1.45 to 1.67; these values were dependent on the deposition temperature. X-ray photoelectron spectroscopy showed that the $ALD-Al_2O_3$ films deposited at $250^{\circ}C$ were stoichiometric, with no carbon impurity. The step coverage of the $ALD-Al_2O_3$ film was perfect, at approximately 100%, at the dual trench structure, with an aspect ratio of approximately 6.3 (top opening size of 40 nm). With capacitance-voltage measurements of the $Al/ALD-Al_2O_3/p-Si$ structure, the dielectric constant of the $ALD-Al_2O_3$ films deposited at $250^{\circ}C$ was determined to be ~8.1, with a leakage current density on the order of $10^{-8}A/cm^2$ at 1 V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.10
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• pp.754-759
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• 2013

Aluminum oxide($Al_2O_3$) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surfaces. Since $Al_2O_3$ has fixed negative charge, it forms effective surface passivation by field effect passivation on the rear side in p-type silicon solar cell. However, $Al_2O_3$ layer formed by ALD process needs very long process time, which is not applicable in mass production of silicon solar cells. In this paper, plasma-assisted ALD(PA-ALD) was applied to form $Al_2O_3$ to reduce the process time. $Al_2O_3$ synthesized by ALD on c-Si (100) wafers contains a very thin interfacial $SiO_2$ layer, which was confirmed by FTIR and TEM. To improve passivation quality of $Al_2O_3$ layer, the deposition temperature was changed in range of $150{\sim}350^{\circ}C$, then the annealing temperature and time were varied. As a result, the silicon wafer with aluminum oxide film formed in $250^{\circ}C$, $400^{\circ}C$ and 10 min for the deposition temperature, the annealing temperature and time, respectively, showed the best lifetime of 1.6ms. We also observed blistering with nanometer size during firing of $Al_2O_3$ deposited on p-type silicon.