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http://dx.doi.org/10.5757/JKVS.2007.16.2.110

Construction of a PEALD System and Fabrication of Cobalt Thin Films  

Lee, D.H. (Department of Applied Physics, Dankook University)
Noh, S.J. (Department of Applied Physics, Dankook University)
Publication Information
Journal of the Korean Vacuum Society / v.16, no.2, 2007 , pp. 110-115 More about this Journal
Abstract
A plasma enhanced atomic layer deposition(PEALD) system has been constructed adopting an inductively coupled plasma(ICP) source with an ALD system, and its plasma generation was carried out. Cobalt thin films were deposited on a p-type Si(100) wafer at $230^{\circ}C$. $Co_{2}(CO)_{6}$ was used as a cobalt precursor, $NH_{3}$ as a reactant, and Ar as a carrier and purge gas. The properties of the thin films were investigated using field emission scanning electron microscopy(FESEM) and auger electron spectroscopy(AES). Large amounts of impurities were found in both the ALD film and the PEALD film, however, the amount of impurities in the PEALD film was reduced to about 50 % compared to that in the ALD film. It was found that $NH_{3}$ plasma, very effectively, induces the reaction with carbon in a cobalt precursor.
Keywords
Atomic layer deposition(ALD); Plasma enhanced atomic layer deposition (PEALD); Cobalt thin film; Impurity;
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