• 제목/요약/키워드: ALD Co

검색결과 52건 처리시간 0.029초

원자층 증착법으로 증착된 MoOx를 적용한 전하 선택 접합의 이종 접합 태양전지 (Heterojunction Solar Cell with Carrier Selective Contact Using MoOx Deposited by Atomic Layer Deposition)

  • 정민지;조영준;이선화;이준신;임경진;서정호;장효식
    • 한국재료학회지
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    • 제29권5호
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    • pp.322-327
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    • 2019
  • Hole carrier selective MoOx film is obtained by atomic layer deposition(ALD) using molybdenum hexacarbonyl[$Mo(CO)_6$] as precursor and ozone($O_3$) oxidant. The growth rate is about 0.036 nm/cycle at 200 g/Nm of ozone concentration and the thickness of interfacial oxide is about 2 nm. The measured band gap and work function of the MoOx film grown by ALD are 3.25 eV and 8 eV, respectively. X-ray photoelectron spectroscopy(XPS) result shows that the $Mo^{6+}$ state is dominant in the MoOx thin film. In the case of ALD-MoOx grown on Si wafer, the ozone concentration does not affect the passivation performance in the as-deposited state. But, the implied open-circuit voltage increases from $576^{\circ}C$ to $620^{\circ}C$ at 250 g/Nm after post-deposition annealing at $350^{\circ}C$ in a forming gas ambient. Instead of using a p-type amorphous silicon layer, high work function MoOx films as hole selective contact are applied for heterojunction silicon solar cells and the best efficiency yet recorded (21 %) is obtained.

Ruthenium Thin Films Grown by Atomic Layer Deposition

  • Shin, Woong-Chul;Choi, Kyu-Jeong;Jung, Hyun-June;Yoon, Soon-Gil;Kim, Soo-Hyun
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.12-12
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    • 2008
  • Ruthenium is one of the noble metals having good thermal and chemical stability, low resistivity, and relatively high work function(4.71eV). Because of these good physical, chemical, and electrical properties, Ru thin films have been extensively studied for various applications in semiconductor devices such as gate electrode for FET, capacitor electrodes for dynamic random access memories(DRAMs) with high-k dielectrics such as $Ta_2O_5$ and (Ba,Sr)$TiO_3$, and capacitor electrode for ferroelectric random access memories(FRAMs) with Pb(Zr,Ti)$O_3$. Additionally, Ru thin films have been studied for copper(Cu) seed layers for Cu electrochemical plating(ECP) in metallization process because of its good adhesion to and immiscibility with Cu. We investigated Ru thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru thin films were grown by ALD(Lucida D100, NCD Co.) using RuDi as precursor and $O_2$ gas as a reactant at 200~$350^{\circ}C$.

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Single Oral Dose Toxicity Test of Water Extracts of Puerariae Radix in ICR Mice

  • Seong, Seung-Kyoo;Kim, Dae-Yong;Rhee, Jung-Woo;Leem, Moon-Jeong;Rho, Yang-Kook;Lee, Hyun-Yong;Ryu, Jei-Man;Ku, Sae-Kwang
    • Toxicological Research
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    • 제22권4호
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    • pp.431-438
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    • 2006
  • The object of this study was to obtain acute toxicity information (single oral dose toxicity) of lyophilized water extract of Puerariae Radix (PR) in both male and female mice. In order to investigate the 50% lethal dose $(LD_{50})$, approximate lethal dosage (ALD), test substances were once orally administered to female and male ICR mice at dose levels of 2000 and 0 (control) mg/kg (body wt.) according to the recommendation of KFDA Guidelines [2005-60, 2005]. The mortality and body weight changes, clinical signs and gross observation were monitored during 14 days after dosing. Organ weight and histopathology of 12 principal organs were measured. As the results, we could not find any mortality, clinical signs, body weight changes and gross findings except for PR extracts unrelated sporadic findings. In addition, no abnormal changes related PR extracts treatment on the organ weight and histopathology of principal organs were detected except for some sporadic findings including hyperplasia of lymphoid follicles in the popliteal lymph nodes and spleen as pharmacological effects of PR extracts. The results obtained in this study suggest that the PR extracts does not cause any toxicological signs except for pharmacological effects of enhancement of Immune system. The $LD_{50}$ and ALD of PR extracts in both female and male mice were considered as over 2000 mg/kg because no mortalities were detected up to 2000mg/kg that was the highest dose recommended by KFDA and Organization for Economic Co-Operation and Development.

후속열처리 및 고온고습 조건에 따른 Cu 배선 확산 방지층 적용을 위한 ALD RuAlO 박막의 계면접착에너지에 관한 연구 (Effects of Post-annealing and Temperature/Humidity Conditions on the Interfacial Adhesion Energies of ALD RuAlO Diffusion Barrier Layer for Cu Interconnects)

  • 이현철;정민수;배병현;천태훈;김수현;박영배
    • 마이크로전자및패키징학회지
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    • 제23권2호
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    • pp.49-55
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    • 2016
  • 차세대 반도체의 초미세 Cu 배선 확산방지층 적용을 위해 원자층증착법(atomic layer deposition, ALD) 공정을 이용하여 증착한 RuAlO 확산방지층과 Cu 박막 계면의 계면접착에너지를 정량적으로 측정하였고, 환경 신뢰성 평가를 수행하였다. 접합 직후 4점굽힘시험으로 평가된 계면접착에너지는 약 $7.60J/m^2$으로 측정되었다. $85^{\circ}C$/85% 상대습도의 고온고습조건에서 500시간이 지난 후 측정된 계면접착에너지는 $5.65J/m^2$로 감소하였으나, $200^{\circ}C$에서 500시간 동안 후속 열처리한 후에는 $24.05J/m^2$으로 계면접착에너지가 크게 증가한 것으로 평가되었다. 4점굽힘시험 후 박리된 계면은 접합 직후와 고온고습조건의 시편의 경우 RuAlO/$SiO_2$ 계면이었고, 500시간 후속 열처리 조건에서는 Cu/RuAlO 계면인 것으로 확인되었다. X-선 광전자 분광법 분석 결과, 고온고습조건에서는 흡습으로 인하여 강한 Al-O-Si 계면 결합이 부분적으로 분리되어 계면접착에너지가 약간 낮아진 반면, 적절한 후속 열처리 조건에서는 효과적인 산소의 계면 유입으로 인하여 강한 Al-O-Si 결합이 크게 증가하여 계면접착에너지도 크게 증가한 것으로 판단된다. 따라서, ALD Ru 확산방지층에 비해 ALD RuAlO 확산방지층은 동시에 Cu 씨앗층 역할을 하면서도 전기적 및 기계적 신뢰성이 우수할 것으로 판단된다.

Atomic Layer Deposition에 의해 제조된 Cobalt Oxide 박막의 특성

  • 김재경;최규하;박광민;이원준;김진식
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.207-207
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    • 2010
  • 휴대용 기기의 사용이 증가하면서 전지의 고용량화와 소형화가 요구되고 있다. 특히 의료용 센서 기기에서는 소형화가 매우 중요하며 인체에 해로운 물질로 구성되지 않는 것이 바람직하다. 최근 고체전해질을 사용하는 마이크로 배터리가 개발되고 있으나, 에너지 저장용량이 작아 응용분야가 제한적이다. Silicon wafer 위에 형성된 고단차의 3차원 박막 배터리를 형성한다면 표면적 증가에 의해 에너지 저장용량 역시 크게 증가할 것이다. 따라서 고단차의 3차원 구조위에 confomal한 박막을 형성하기 위해서는 기존 물리증착방법과는 달리 새로운 step coverage가 우수한 박막증착법이 필요하다. 본 연구에서는 atomic layer deposition(ALD)으로 박막 배터리의 cathode 물질인 $LiCoO_2$를 증착하기 위한 기초연구로서 cobalt oxide 박막의 ALD 공정을 연구하였다. Cobalt +2가 전구체와 $O_3$를 교대로 공급하여 박막을 증착하고 그 박막의 물리적, 화학적, 전기적 특성을 조사하였다. 이를 통해 exposure와 기판온도가 박막의 특성에 미치는 영향을 고찰하였다. 또한 pattern wafer위에 박막을 증착하여 step coverage를 조사하였다.

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Development Status of Equipment for Mass Production of AMOLED Panels Using 'Super Grain Silicon' Technology

  • Hong, Jong-Won;Na, Heung-Yeol;Chang, Seok-Rak;Lee, Ki-Yong;Kim, Sang-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1136-1139
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    • 2009
  • Recently, various Ni doping systems and thermal annealing systems have been developed for fabrication of polycrystalline silicon film using SGS (super grain silicon) for medium and largesize AMOLED panels. In this study, we compare the potential of Ni doping systems including ALD (atomic layer deposition), AMD (atmospheric metal deposition), in-line sputter, and crystallization annealing systems including batch type furnace, inline furnace, and RTA (rapid thermal annealing) developed for the SGS method. Additional requirements for those systems to be used for mass production of large AMOLED TVs are suggested based on evaluation results for both poly-Si films and TFT backplanes.

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원자층 증착법에 의한 Al2O3 박막 형성에 따른 모스아이 구조 반사방지 필름의 기계적 물성에 미치는 영향 (Effect of Atomic Layer Deposited Al2O3 Thin Films on the Mechanical Properties of Anti-reflective Moth Eye Nanostructured Films)

  • 윤은영;이우재;장경수;최현진;최우창;권세훈
    • 한국표면공학회지
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    • 제48권2호
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    • pp.50-55
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    • 2015
  • $Al_2O_3$ thin films were deposited on the moth eye anti-reflective nanostructured polycarbonate films by atomic layer deposition (ALD) techniques. Without ALD-$Al_2O_3$ thin films, moth eye anti-reflective nanostructured films had a high optical transmittance of 95.47% at a wavelength of 550 nm and a very poor hardness of 0.1381 GPa. With increasing the thickness of $Al_2O_3$ thin films from 5 to 25 nm, the transmittance of moth eye anti-reflective nanostructured films was gradually decreased from 94.94 to 93.12%. On the other hand, the hardness of the films was greatly increased from 0.3498 to 0.7806 GPa with increasing the thickness of $Al_2O_3$ thin films. This result shows that ALD thin films can be applied to improve mechanical properties with an adequate optical transmittance of the conventional moth eye anti-reflection nanostructure films.

Classical Swine Fever (Hog Cholera) Virus 약독순화주 (Suri 주)의 gp55 Gnen 염기서열 분석 (Sequence Analysis of the Gene Encoding gp55 Protein of Suri Strain, an Attenuated Classical Swine Fever (Hog Cholera) Virus)

  • 김귀현;장경수;강경임;이병형;박종현;안수환;전무형
    • 대한바이러스학회지
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    • 제28권4호
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    • pp.303-316
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    • 1998
  • An attenuated classical swine fever virus (CSFV), Suri strain, is a variant derived from a vaccine virus, LOM strain. This study was performed to elucidate the molecular biologcal properties of CSFV Suri strain, and to obtain the basic data for molecular epidemiological approaches for the disease. The truncated form of gp55 gene without the C-terminal transmembrane domain, in size of 1,023bp, was amplified by RT-PCR and sequenced by dye terminator cyclic sequencing method, and inserted into BamHI site of pAcGP67B baculovirus vector, establishing a cloned pAcHEG plasmid. By the nucleotide sequences determined, 341 amino acid sequences were predicted. As compared the nucleotide and amino acid sequences of gp55 of Suri with the various CSFV, Suri strain showed the high homology over 99.1% with ALD and LOM strains, but comparably the lower homology with Alfort and Brescia. In comparison of amino acid sequence in variable domain of gp55 protein, the similar tendency of homology was observed. In hydrophobicity analysis, all of four CSFV strains revealed the analogous patterns of hydrophobicity. The numbers and locations of N-glycosylation site and cysteine residues in gp55 were analyzed, those of Suri strain being coincident with ALD and LOM strains. The results suggest that gp55 in Suri strain has the high similarity to those in ALD and LOM strains in terms of the nucleotide and amino acid sequences and the functional properties of gp55 protein.

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ALD법으로 제조된 Al2O3 박막의 물리적 특성 (Physical Properties of the Al2O3 Thin Films Deposited by Atomic Layer Deposition)

  • 김재범;권덕렬;오기영;이종무
    • 한국재료학회지
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    • 제12권6호
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    • pp.493-498
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    • 2002
  • $Al_2O_3$ is a promising gate dielectric because of its high dielectric constant, high resistivity and low leakage current. Since $OH^-$ radical in $Al_2O_3$ films deposited by ALD using TMA and $H_2O$ degrades the good properties of $Al_2O_3$, TMA and $O_3$ were used to deposite $Al_2O_3$ films and the effects of $O_3$ on the properties of the $Al_2O_3$ films were investigated. The growth rate of the $Al_2O_3$ film under the optimum condition was 0.85 $\AA$/cycle. According to the XPS analysis results the $OH^-$ concentration in the $Al_2O_3$ film deposited using $O_3$ is lower than that using $H_2O$. RBS analysis results indicate the chemical formula of the film is $Al_{2.2}O_{2.8}$. The carbon concentration in the film detected by AES is under 1 at%. SEM observation confirms that the step coverage of the $Al_2O_3$ film deposited by ALD using $O_3$ is nearly 100%.

Study of CO Oxidation on Bare and $TiO_2$-coated NiO/$Ni(OH)_2$

  • Nam, Jong-Won;Kim, Kwang-Dae;Kim, Dong-Wun;Seo, Hyun-OoK;Kim, Young-Dok;Lim, Dong-Chan
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.109-109
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    • 2011
  • CO oxidaition reacitvity of bare and $TiO_2$ -coated NiO/$Ni(OH)_2$ nanoparticles was studied. For the deposition of $TiO_2$ atomic layer deposition was used, and formation of three-dimensional island of $TiO_2$ on NiO/$Ni(OH)_2$ could be identified. Based on the data of X-ray Photoelectron Spectroscopy, we suggest that only $Ni(OH)_2$ existed on the surface, whereas NiO disappeared upon $TiO_2$ deposition. Both CO adsorption and CO oxidation took place on NiO/$Ni(OH)_2$ surfaces under our experimental conditions. CO adsorption was completely suppressed after $TiO_2$ deposition, whereas CO oxidation activity was maintained to large extent. It is proposed that bare NiO can uptake CO under our experimental condition, whereas hydroxylated surface of NiO can be active for CO oxidation.

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