• Transactions on Electrical and Electronic Materials
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• v.15 no.5
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• pp.275-278
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• 2014

We deposited TiAgN and ZrAgN nanocomposite coatings on pure Titanium specimens, by using arc ion plating (AIP) with single alloy targets. TiAg ZrAg alloy targets of 5 wt.%, 10 wt.% silver content by vacuum arc remelting (VAR), followed by homogenization for 2 hours at $1,100^{\circ}C$ in non-active Ar gas atmosphere and characterized these samples for morphology and chemical composition. We investigated the biocompatibility of TiAg and ZrAg alloys by examining the proliferation of L929 fibroblast cells by MTT test assay, after culturing the cells ($4{\times}10^4cells/cm^2$) for 24 hours; and exploring the antibacterial properties of thin films by culturing Streptococus Mutans (KCTC3065), using paper disk techniques. Our results showed no cytotoxic effects in any of the specimens, but the antibacterial effects against Streptococus Mutans appeared only in the 10 wt.% silver content specimens.

• Journal of the Korean Society for Heat Treatment
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• v.28 no.2
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• pp.63-67
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• 2015

$TiO_2/Ag/TiO_2$ trilayer films were deposited with radio frequency (RF) and direct current (DC) magnetron sputtering onto the glass substrate to consider the influence of Ag interlayer on the optical properties of the films. The thickness of $TiO_2$ films was kept at 24 nm, while the thickness of Ag interlayer was varied as 5, 10, 15, and 20 nm. As-deposited $TiO_2$ single layer films show the optical transmittance of 66.7% in the visible wave-length region and the optical reflectance of 16.5%, while the $TiO_2$ films with a 15 nm thick Ag interlayer show the enhanced optical transmittance of 80.2% and optical reflectance of 77.8%. The carrier concentration was also influenced by Ag interlayer. The highest carrier concentration of $1.01{\times}10^{23}cm^{-3}$ was observed for a 15 nm thick Ag interlayer in $TiO_2/Ag/TiO_2$ films. The observed result means that an optimized Ag interlayer in $TiO_2/Ag/TiO_2$ films enhanced the structural and optical properties of the films.

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.257-263
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• 2006

We have investigated the effect of silver added to Cu films on the microstructure evolution, resistivity, surface morphology, stress relaxation temperature, and adhesion properties of Cu(Ag) alloy thin films deposited on Mo glue layer upon annealing. In addition, pure Cu films deposited on Mo has been annealed and compared. The results show that the silver in Cu(Ag) thin films control the grain growth through the coarsening of its precipitates upon annealing at $300^{\circ}C{\sim}600^{\circ}C$ and the grain growth of Cu reveals the activation energy of 0.22 eV, approximately one third of activation energy for diffusion of Ag dopant along the grain boundaries in Cu matrix (0.75 eV). This indicates that the grain growth can be controlled by Ag diffusion along the grain boundaries. In addition, the grain growth can be a major contributor to the decreased resistivity of Cu(Ag) alloy thin films at the temperature of $300^{\circ}C{\sim}500^{\circ}C$, and decreases the resistivity of Cu(Ag) thin films to $1.96{\mu}{\Omega}-cm$ after annealing at $600^{\circ}C$. Furthermore, the addition of Ag increases the stress relaxation temperature of Cu(Ag) thin films, and thus leading to the enhanced resistance to the void formation, which starts at $300^{\circ}C$ in the pure Cu thin films. Moreover, Cu(Ag) thin films shows the increased adhesion properties, possibly resulting from the Ag segregating to the interface. Consequently, the Cu(Ag) thin films can be used as a metallization of advanced TFT-LCDs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.5
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• pp.500-506
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• 2024

The transparent electrode characteristics of the SnO₂/AgNi/SnO₂ (OMO) multilayer structures prepared by sputtering were investigated according to the annealing temperature. Ni-doped Ag of various compositions was selected as the metal layer and heat treatment was performed at 100~300℃ to evaluate the thermal stability of the metals. The manufactured OMO multilayer structures were heat treated for 6 hours at 400~600℃ in an N₂ atmosphere. The structural, electrical, and optical properties of the OMO structures before and after annealing were evaluated and analyzed using a UV-VIS spectrophotometer, 4-point probe, XPS, FE-SEM, etc. OMO with Ni-doped Ag shows improved performance due to the reduction of structural defects of Ag during annealing, but OMO structure with pure Ag shows degradation characteristics due to Ag diffusion into the oxide layer during high-temperature annealing. The figure of merit (FOM) of SnO₂/Ag/SnO₂ was highest at room temperature and gradually decreased as the heat treatment temperature increased. On the other hand, the FOM value of SnO₂/AgNi/SnO₂ mostly showed its maximum value at high temperature(~550℃). In particular, the FOM value of SnO₂/Ag-Ni (3.2 at%)/SnO₂ was estimated to be approximately 2.38×10^-2 Ω^-1. Compared to transparent electrodes made of other similar materials, the FOM value of the SnO₂/Ag-Ni (3.2 at%)/SnO₂ multilayer structure is competitive and is expected to be used as an alternative transparent conductive electrode in various devices.

• Journal of the Korean Chemical Society
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• v.43 no.4
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• pp.407-411
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• 1999

Studies have been carried out on the fabrication of PPy/GC and PPy/Pt electrode modified with polypyrrole film and determination of Cr(VI) by using 3-electrode system with modified electrodes. Modified electrodes were able to easily fabricated by cyclic voltammetry scanned from +1.0V to -1.0V(vs. Ag/AgCl) at 50 mV/sec. Film thickness could be controlled at same condition by the number of cycling up to 26 times. Reduction behaviour of Cr(VI) at PPy/GC electrode could be seen at wide potential ranges from +0.6V to -0.5V(vs. Ag/AgCl), and maximum reduction peak potential of the ion was observed at -0.25V(vs.Ag/AgCl). Calibration graph at its potential was linear from 0.1 ppm to 80.O ppm. Slope factor and relative coefficient were 1.75 mA/ppm and 0.998, respectively. Reduction behaviour of Cr(VI) at PPy/Pt electrode was similar to PPy/GC electrode, Calibration graph was linear from l.0 ppm to 60.0 ppm. Slope factor and relative coefficient were 0.5mA/ppm and 0.923, respectively. But PPy/GC modified electrode had about 3 times higher sensitivity than PPy/Pt modified electrode. Reduction behaviour of Cu(II), As(IlI), Pb(II), and Cd(II) couldn't be seen at PPy/GC electrode,Its metals had not lnterfered with Cr (VI) determination.

• Journal of Microbiology and Biotechnology
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• v.21 no.4
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• pp.379-386
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• 2011

The objective of this work was to investigate the ability of the plant growth-promoting rhizobacterium Pseudomonas aureofaciens 63-28 to induce plant defense systems, including defense-related enzyme levels and expression of defense-related isoenzymes, and isoflavone production, leading to improved resistance to the phytopathogen Rhizoctonia solani AG-4 in soybean seedlings. Seven-day-old soybean seedlings were inoculated with P. aureofaciens 63-28, R. solani AG-4, or P. aureofaciens 63-28 plus R. solani AG-4 (P+R), or not inoculated (control). After 7 days of incubation, roots treated with R. solani AG-4 had obvious damping-off symptoms, but P+R-treated soybean plants had less disease development, indicating suppression of R. solani AG-4 in soybean seedlings. Superoxide dismutase (SOD) and catalase (CAT) activities of R. solani AG-4-treated roots increased by 24.6% and 54.0%, respectively, compared with control roots. Ascorbate peroxidase (APX) and phenylalanine ammonia lyase (PAL) activities of R. solani AG-4-treated roots were increased by 75.1% and 23.6%, respectively. Polyphenol oxidase (PPO) activity in soybean roots challenged with P. aureofaciens 63-28 and P+R increased by 25.0% and 11.6%, respectively. Mn-SOD (S1 band on gel) and Fe-SOD (S2) were strongly induced in P+R-treated roots, whereas one CAT (C1) and one APX (A3) were strongly induced in R. solani AG-4- treated roots. The total isoflavone concentration in P+Rtreated shoots was 27.2% greater than the control treatment. The isoflavone yield of R. solani AG-4-treated shoots was 60.9% less than the control.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.1
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• pp.41-46
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• 2010

The interfacial adhesion strengths between screen-printed Ag film and epoxy resin-coated polyimide were evaluated by $180^{\circ}$ peel test method. Measured peel strength value was initially around $164.0{\pm}24.4J/m^2$, while the heat treatment during 24h at $120^{\circ}C$ increase peel strength up to $220.8{\pm}19.2J/m^2$. $85^{\circ}C/85%$ RH temperature/humidity treatment decrease peel strength to $84.1{\pm}50.8J/m^2$, which seems to be attributed to hydrolysis bonding reaction mechanism between metal and adhesive epoxy resin coating layer.

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.125-131
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• 2015

Fluorine-doped $SnO_2$ (FTO) thin film/Ag nanowire (NW) double layers were fabricated by means of spin coating and ultrasonic spray pyrolysis. To investigate the optimum thickness of the FTO thin films when used as protection layer for Ag NWs, the deposition time of the ultrasonic spray pyrolysis process was varied at 0, 1, 3, 5, or 10 min. The structural, chemical, morphological, electrical, and optical properties of the double layers were examined using X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, the Hall effect measurement system, and UV-Vis spectrophotometry. Although pure Ag NWs formed isolated droplet-shaped Ag particles at an annealing temperature of $300^{\circ}C$, Ag NWs covered by FTO thin films maintained their high-aspect-ratio morphology. As the deposition time of the FTO thin films increased, the electrical and optical properties of the double layers degraded gradually. Therefore, the double layer fabricated with FTO thin films deposited for 1 min exhibited superb sheet resistance (${\sim}14.9{\Omega}/{\Box}$), high optical transmittance (~88.6 %), the best FOM (${\sim}19.9{\times}10^{-3}{\Omega}^{-1}$), and excellent thermal stability at an annealing temperature of $300^{\circ}C$ owing to the good morphology maintenance of the Ag NWs covered by FTO thin films.

• Journal of Preventive Medicine and Public Health
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• v.30 no.2 s.57
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• pp.267-278
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• 1997

The purpose of this study was to investigate the incidence rate of hepatitis B in the military service and to examine the effect of the asymptomatic hepatitis B surface antigen(HBsAG) carries on the incidence of hepatitis B. The subject were 223,270 men who were conscripted to the Korean Army from 1991 to 1994. According to the conscripted year, four conscription cohort were constructed. At the screening examination for military service no test for hepatitis B were performed in 1991 and 1992. In 1993, a screening test for hepatitis B were performed and those who were confirmed as HBsAg positive o. showed high titers $(\geqq100IU)$ of nm glutamic-pyruvic transaminase(SGPT) were excluded from conscription. In 1994, the criteria for conscription was changed and those who were HBsAg positive were not excluded from conscription. Only those who showed $\geq$ SGPT 100IU were excluded. The main results were as follows ; 1. The positive rate of HBsAg is 5.5% in the conscripted men. 2. The incidence rates of the hepatitis B in 1991 and 1992 conscription cohort were 9.96 and 8.10 per ten thousand person-year, respectively. The incidence rate of the hepatitis B was 1.34 per ten thousand person-year in 1993 conscription cohort which was confirmed as HBsAg negative at the screning test, and 7.41 per ten thousand person-year in 1994 conscription cohort which included the HBsAg positive. 3. The incidence rate of hepatitis B was 99.98 per ten thousand person-year in HBsAg positive group and 2.25 per ten thousand person-year in HBsAg negative group. The incidence rate of the group with high SGPT and HBsAg positive was 255 times higher than that of normal population. 4. The incidence of hepatitis B in HBsAg negative group did not increase even though the probability of personal contact with HBsAg positive had been increased. from the above results, the men who have high SGPT with HBsAg positive should be excluded from military service, and it can not be said that asymptomatic HBsAg carriers influence on the hepatitis B incidence among the HBsAg negative through personal contact.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.290-290
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• 2012

본 실험에서는 RF magnetron sputtering법과 evaporator법을 이용하여 다층박막 OMO구조를 $30{\times}30mm$ 유리기판 위에 제작하였다. Oxide층은 Sputter장비를 이용 IGZO막을 제작하였으며, Metal 층은 evaporator장비를 이용 Ag 막을 제작하였다. 변수로는 Oxide층의 시간에 따른 특성 변화를 연구하였다. 소결된 타겟으로는 In:Ga:ZnO를 각각 1:1:1 mol%의 조성비로 혼합하여 이용하였으며, Ag는 99.999%의 순도를 가진다. Oxide층의 RF sputter 공정 조건으로는 초기압력 $3.0{\times}10^{-6}$ Torr 이하로 하였으며, 증착 압력 $2.0{\times}10^{-2}$ Torr, Rf power 30 W, Ar gas 50 sccm으로 고정 시켰으며, 변수로는 5, 7, 9, 11분은 시간 차이를 두어 증착을 하였다. Metal층의 Evaporator 공정조건으로는 $5.0{\times}10^{-6}$ Torr이하, 전압은 0.3 V, Thickness moniter로 두께를 확인해가며 증착하였으며, $100{\AA}$으로 고정시켰다. 분석결과로는 XRD 측정 결과 35도 부근에서 Ag 피크가 관찰되었다. IGZO막 하나일때 90% 이상의 평균 투과율을 보였으며, 3층의 구조가 모두 증착됐을때의 투과도는 가시광영역에서 평균 80% 이상의 투과율을 보였으며, 500 nm부터 투과율이 떨어지기 시작해 800 nm부근에서는 평균 투과율이 30%까지 떨어져 Metal층인 Ag가 하나의 layer로 잘 증착이 된것을 보여주며, 플라즈몬효과를 보여줌을 알수있다. AFM측정 결과 평균 거칠기는 1.2 nm 정도의 거칠기를 확인했다. 홀 측정결과 전기적 특성은 발견되지 않았다.