• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.45-48
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• 2003

The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on tungsten passivation layer in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we investigated the effects of oxidizer on W-CMP process with three different kinds of oxidizers, such as $H_2O_2$, $Fe(NO_3)_3$, and $KIO_3$. In order to compare the removal rate and non-uniformity of three oxidizers, we used alumina-based slurry of pH 4. According to the CMP tests, three oxidizers showed different removal mechanism on tungsten surface. Also, the microstructures of surface layer by AFM image were greatly influenced by the slurry chemical, composition of oxidizers. The difference in removal rate and roughness of tungsten surface are believed to caused by modification in the mechanical behavior of $Al_2O_3$ abrasive particles in CMP slurry. Our stabilized slurries can be used a guideline and promising method for improved W-CMP process.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.215-219
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• 2004

Metal-chelate derivatives have been investigated intensively as an emitting layer and recognize to have excellent electroluminescence(EL) properties. We synthesized new luminescent material, 1,4-dihydoxy-5,8-naphtaquinone $Aiq_3$ complex($Al_2Nq_4$) and investigated the electrical optical properties. OLED has potential candidates for information display with merits of thickness, low power and high efficiency. Although the OLED show a lot of advantages for information display, it has the limit of inorganic(metal)/ organic interface. In this study, the two methods are used to study the interface of metal/organic in OLED. First, we treated $O_2$ plasma on an ITO thin film by using RIE system, and analyzed the ingredient of ITO thin film according to change of the processing conditions. We used the RDS and the XPS for the ingredient analysis of the surface and bulk. We measured electrical resistivity using Four-Point-Probe and calculated sheet resistance, and ITO surface roughness was measured by using AFM. We fabricated OLED using substrate that was treated optimum ITO surface. Second, we used the buffer layer of CuPc to improve the characteristics of the interface and the hole injection in OLED. The result of the study for electrical and optical properties by using I V L T System(Flat Panel Display Analysis System), we confirmed that the electrical properties and the luminance properties were improved.

• 센서학회지
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• 제18권3호
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• pp.239-244
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• 2009

We fabricated nano-templates by low temperature BCP(block copolymer) process at 180 $^{\circ}C$, then we deposited 10 nm-thick $TiO_2$ layers with ALD(atomic layer deposition) at low temperature of 150 $^{\circ}C$. Through FE-SEM analysis, we confirmed the successful formation of the groove-type(width of crest : 30 nm, width of trough : 18 nm) and the cylinder-type(diameter : 10 nm, distance between hole : 25 nm) templates. Moreover, after $TiO_2$-ALD processing, we confirmed the deposition of the uniform nano layers of $TiO_2$ on the nano-templates. Through AFM analysis, the pitches of the crest-through(in groove-type) and hole-hole(in cylinder-type) were the same before and after $TiO_2$-ALD processing. In addition, we indirectly determined the existence of the uniform $TiO_2$ layers on nano-templates as the surface roughness decreased drastically. We successfully fabricated nano-template at low temperature and confirmed that the three-dimensional nano-structure for sensor application could be achieved by $TiO_2$-ALD processing at extremely low temperature of 150 $^{\circ}C$.

• 한국분말재료학회지
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• 제17권6호
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• pp.456-463
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• 2010

This paper describes the results of the application of Cr-Diamond-like carbon (DLC) films for efficiency improvement through surface modification of spur gear parts in the hydraulic gear pump. Cr-DLC films were successfully deposited on SCM 415 substrates by a hybrid coating process using linear ion source (LIS) and magnetron sputtering method. The characteristics of the films were systematically investigated using FE-SEM, nano-indentation, sliding tester and AFM instrument. The microstructure of Cr-DLC films turned into the dense and fine grains with relatively preferred orientation. The thickness formed in our Cr buffer layer and DLC coating layer were obtained the 487 nm and $1.14\;{\mu}m$. The average friction coefficient of Cr-DLC films considerably decreased to 0.15 for 0.50 of uncoated SCM415 material. The hardness and surface roughness of Cr-DLC films were measured 20 GPa and 10.76 nm, respectively. And then, efficiency tests were performed on the hydraulic gear pump to investigate the efficiency performance of the Cr-DLC coated spur gear. The experimental results show that the volumetric and mechanical efficiency of hydraulic gear pump using the Cr-DLC spur gear were improved up to 2~5% and better efficiency improvement could be attributed to its excellent microstructure, higher hardness, and lower friction coefficient. This conclusion proves the feasibility in the efficiency improvement of hydraulic gear pump for industrial applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.45-45
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• 2007

Capacitors among the embedded passive components are most widely studied because they are the major components in terms of size and number and hard to embed compared with resistors and inductors due to the more complicated structure. To fabricate a capacitor-embedded PCB for in-line process, it is essential to adopt a low temperature process (<$200^{\circ}C$). However, high dielectric materials such as ferroelectrics show a low permittivity and a high dielectric loss when they are processed at low temperatures. To solve these contradicting problems, we studied BMN materials as a candidate for dielectric capacitors. processed at PCB-compatible temperatures. The morphologies of BMN thin films were investigated by AFM and SEM equipment. The electric properties (C-F, I-V) of Pt/BMN/Cu/polymer were evaluated using an impedance analysis (HP 4194A) and semiconductor parameter analyzer (HP4156A). $Bi_2Mg_{2/3}Nb_{4/3}O_7$(BMN) thin films deposited on copper clad laminate substrates by sputtering system as a function of Ar/$O_2$ flow rate at room temperature showed smooth surface morphologies having root mean square roughness of approximately 5.0 nm. 200-nm-thick films deposited at RT exhibit a dielectric constant of 40, a capacitance density of approximately $150\;nF/cm^2$, and breakdown voltage above 6 V. The crystallinity of the BMN thin films was studied by TEM and XRD. BMN thin film capacitors are expected to be promising candidates as embedded capacitors for printed circuit board (PCB).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.332-335
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• 2004

Boron Phosphide films were deposited on(III) Si substrate at $650^{\circ}C$, by the reaction of $B_2H_6$ with $PH_3$ using CVD. $N_2$ was employed as carrier gas. The optimal gas rates were 20 ml/min for $B_2H_6$, 60 ml/min for $PH_3$ ml/min and $1{\ell}/min$ for $N_2$. The films were annealed for 1hour in $N_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the average surface roughness is each $10.108{\AA}$ and $29.626{\AA}$. So, we could know every commonplace thing. The measurement of XRD shows that the films have the preferred orientation of(1 0 1). From SEM images, we could see that Boron Phosphide is showed of a structure, which is grain size, which is grain boundary size. Also, the measurement of AES is shown the films have $B_{13}P_2$ Stoichiometry. From WDX See that ingredient is detected each Boron and Phosporus. So, we could see that deposited BP thin film. In this study, we obtained the BP thin film by deposited in atmosphere pressure, and known to applicate as microwave absorbtion material of BP thin film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.533-538
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• 2003

It has been shown that ion implantation produces remarkable improvements in surface-sensitive physical and chemical properties as well as other mechanical properties, in polymers. In this study, ion implantation was performed onto polymer, PC(polycarbonate), in order to investigate surface hydrophilic property through contact angle measurement using distilled water. PC was irradiated with N, Ar, Xe ions at the irradiation energy of $20\;{\sim}\;50keV$ and the dose range of $5{\times}10^{15},\;1{\times}10^{16},\;7{\times}10^{16}\;ions/cm^2$. The contact angle of water has been reduced with increasing fluence and ion mass but increased with increasing implanted energy. The changes of chemical and structural property are discussed in view of infrared spectroscopy and FT-IR, XPS, which shows increasing C-O bonding and C-C bonding. The root mean square of surface roughness examined by means of AFM changed smoothly from 0.387nm to 0.207nm and the change of wettability was discussed with respect to elastic and inelastic collisions obtained as results of TRIM simulation. It was found that wettability of the modified PC surface was affected on change of functional group and nuclear stopping or linear energy transfer(LET, energy deposited per unit track length per ion) that causes chain scission by displacing atom from polymer chains, but was not greatly dependant on surface morphology.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.450-450
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• 2006

Organic light-emitting diodes (OLED) as pixels for flat panel displays are being actively pursued because of their relatively simple structure, high brightness, and self-emitting nature [1, 2]. The top-emitting diode structure is preferred because of their geometrical advantage allowing high pixel resolution [3]. To enhance the performance of TOLEDs, it is important to deposit transparent top cathode films, such as transparent conducting oxides (TCOs), which have high transparency as well as low resistance. In this work, we report on investigation of the characteristics of an indium tin oxide (ITO) cathode electrode, which was deposited on organic films by using a radio-frequency magnetron sputtering method, for use in top-emitting organic light emitting diodes (TOLED). The cathode electrode composed of a very thin layer of Mg-Ag and an overlaying ITO film. The Mg-Ag reduces the contact resistivity and plasma damage to the underlying organic layer during the ITO sputtering process. Transfer length method (TLM) patterns were defined by the standard shadow mask for measuring specific contact resistances. The spacing between the TLM pads varied from 30 to $75\;{\mu}m$. The electrical properties of ITO as a function of the deposition and annealing conditions were investigated. The surface roughness as a function of the plasma conditions was determined by Atomic Force Microscopes (AFM).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.72-72
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• 2010

탄소나노튜브(carbon nanotubes : CNTs)는 뛰어난 전기적, 물리적인 특성을 가지고 있기 때문에 다양한 분야에서 이를 활용하려는 노력들이 활발히 이루어지고 있다. CNTs의 전기적인 특성은 직경에 의해 결정되므로, 직경을 균일하게 제어하는 일이 CNTs를 기반으로 한 전자소자 응용에 가장 중요한 사항이라 할 수 있다. 일반적으로 화학기상증착법(chemical vapor deposition, CVD)으로 합성된 CNTs의 직경은 촉매의 크기에 의존하기 때문에, 촉매의 크기를 제어하기 위한 다양한 연구들이 활발히 진행되고 있다[1-3]. 하지만 CNTs의 성장온도 근처에서 촉매 입자는 표면 확산(surface diffusion)에 의해 응집(agglomeration)되기 때문에 작고 균일한 크기의 촉매를 얻기 어렵다. 본 연구에서는 Si(001) 기판 위에 지지층(supporting layer)인 Al의 두께를 변화시켜 증착하고, 열적산화과정을 통해 $Al_2O_3$ 층을 형성한 후 Fe을 증착하여 CNTs를 합성하였다. $Al_2O_3$ 지지층과 Fe 촉매입자의 구조와 화학적 상태를 원자힘현미경 (atomic force microscopy, AFM), 주사전자현미경 (scanning electron microscopy, SEM), 투과전자현미경 (transmission electron microscopy, TEM), X-선 광전자 분광기(X-ray photoelectron spectroscopy)를 통해 분석하였고, 성장된 CNTs는 SEM, TEM, 라만 분광법 (Raman spectroscopy)을 통해 분석하였다. 그 결과, $Al_2O_3$ 층은 두께에 따라 각기 다른 표면 거칠기(RMS roughness)와 결정립(grain)의 크기를 갖게 되며, 이러한 표면구조가 Fe 촉매입자의 표면확산에 의한 응집에 관여하여 CNTs의 직경에 영향을 미치는 것을 확인하였다. 또한 $Al_2O_3$ 지지층의 두께가 15 nm인 경우, Fe의 응집현상이 억제되어 좁은 직경분포를 지닌 고순도 단일벽 탄소나노튜브(Single-walled CNTs)가 성장되는 것을 확인하였다.

• 한국재료학회지
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• 제22권10호
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• pp.508-512
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• 2012

ZnO thin films were grown on a sapphire substrate by RF magnetron sputtering. The characteristics of the thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL), and Hall effect. The substrate temperature and growth time were kept constant at $200^{\circ}C$ at 30 minutes, respectively. The RF power was varied within the range of 200 to 500 W. ZnO thin films on sapphire substrate were grown with a preferred C-axis orientation along the (0002) plan; X-ray diffraction peak shifted to low angles and PL emission peak was red-shifted with increasing RF power. In addition, the electrical characteristics of the carrier density and mobility decreased and the resistivity increased. In the electrical and optical properties of ZnO thin films under variation of RF power, the crystallinity improved and the roughness increased with increasing RF power due to decreased oxygen vacancies and the presence of excess zinc above the optimal range of RF power. Consequently, the crystallinity of the ZnO thin films grown on sapphire substrate was improved with RF sputtering power; however, excess Zn resulted because of the structural, electrical, and optical properties of the ZnO thin films. Thus, excess RF power will act as a factor that degrades the device characteristics.