• 한국윤활학회:학술대회논문집
• /
• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
• /
• pp.175-176
• /
• 2002

Our study is to search for tribological properties of diamond-like carbon (DLC) films as known as anti- wear hard thin film on various polymers. This report deals with the deposition of DLC films on various polymer substrates in vacuum by magnetron radio frequency (RF) sputtering method with using argon plasma and graphite, titanium target. The properties of friction and wear are measured using a ball-on-disk wear -testing machine. The properties of friction and wear have been remarkably improved by DLC coating. Moreover the composition of DLC films has been analyzed by using auger electron spectroscopy(AES). The wear rate of titanium-containing DLC film is lower than that of no-metal-containing DLC film.

• 한국세라믹학회지
• /
• 제26권5호
• /
• pp.670-676
• /
• 1989

The PbTiO3 is well known materials having remarkable ferroelectric, piezoelectric, and pyroelectric properties. PbTiO3 thin films with a perovskite structure were successfully fabricated on titanium substrate by chemical vapor deposition. These films were characterized according to composition, crystal structure, and electrical properties. Semi-quantitative compositional analysis of the deposited films was made by Auger Electron Spectroscopy(AES). The PbTiO3 film deposited on titanium substrate at the deposition temperature 75$0^{\circ}C$, the Ti(C2H5O)4 fraction 0.15, and O2 partial pressure 0.06atm, has a columnar structure and grows with(001) preferred orientation, and has stoichiometric composition. A clear dielectric transition and offset in the dc conductivity near the transition temperature(48$0^{\circ}C$) were observed in the deposited lead titanate film.

• 한국정밀공학회지
• /
• 제22권12호
• /
• pp.124-130
• /
• 2005

The research on surface modification technology has been advanced to improve the properties of engineering materials. ion implantation is a novel surface modification technology to enhance the mechanical, chemical and electrical properties of substrate's surface using accelerated ions. In this research, nitrogen ions were implanted into aluminum substrates which would be used for mold of rubber materials. The composition of nitrogen ion implanted aluminum alloy and nitrogen ion distribution profile were analyzed by Auger Electron Spectroscopy (AES). To analyze the modified surface, properties such as hardness, friction coefficient, wear resistance, contact angle, and surface roughness were measured. Hardness of ion implanted specimens was higher than that of untreated specimens. Friction coefficient was reduced, and wear resistance was improved. From the experimental results, it can be expected that ion implantation of nitrogen enhances the surface properties of aluminum mold.

• 대한전자공학회논문지
• /
• 제27권5호
• /
• pp.709-715
• /
• 1990

SiO2 films were nitrided by tungsten-halogen heated rapid thermal annealing in ammonia gas at temperatures of 900-1100\ulcorner for 15-180sec. The nitroxide films were analyzed using Auger electron spectroscopy. MIS caapcitors were fabricated using these films as gate insulators. I-V and C-V characteristics of MIS capacitors were investigated. The AES depth profiles of nitroxide film show that the nitrogen rich layer is, at the early stage of nitridation, formed at the surface of nitroxide film and near the interface between nitroxide and silicon. Nitridation of SiO2 makes the film have a larger effective average refractive index. The thermal nitridation of SiO2 on silicon causes the flatband voltage shift due to the change of the fixed charge density. It is found that the dominant conduction mechanism in nitroxide is Fowler-Nordheim tunneling. Rapid thermal nitridation of 200\ulcornerSiO2 on silicon results in an improvement in the dielectric breakdown electric field.

• 대한전자공학회논문지
• /
• 제27권5호
• /
• pp.729-736
• /
• 1990

Oxide (RTO), nitrided-oxide(NO), and reoxidized-nitrided-oxide(ONO) films were formed by sequential rapid thermal processing. The film composition was investigated by Auger electron spectroscopy(AES). The Si/SiO2 interface and SiO2 surface are nitrided more preferentially than SiO2 bulk. When the NO is reoxidized, [N](atomic concentration of N) in the NO film decreased` especially, the decrease of [N] at the surface is considerable. The weaker the nitridation condition is, the larger the increase of thickness is as the reoxidation proceeds. The elelctrical characteristics of RTO, NO, and ONO films were evaluated by 1-V, high frequency (1 MHz) C-V, and high frequency C-V after constant current stress. The ONO film-which has 8 nm thick initial oxide, nitrided in NH3 at 950\ulcorner for 60 s, reoxidized in O2 at 1100\ulcorner for 60 s-shows good electrical characteristics such as higher electrical breakdown voltage and less variation of flat band voltage under high electric field than RTO, and NO films.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1989년도 하계종합학술대회 논문집
• /
• pp.386-389
• /
• 1989

Phosphorus nitride films on InP surface were grown by a Photo-CVD (chemical vapor deposition) technique over 100-250 $^{\circ}C$ range of substrate temperature, which is based on direct photolysis of $PCl_3/H_2$ and $NH_3$ gas mixtures by 185nm ultraviolet light from a low pressure mercury lamp. The film growth rate ed the refractive index(n) were shown about 700-800 ${\AA}/hr$ and 1.7-1.8, respectively. Composition ratio and interface properties were analyzed by AES(Auger Electron Spectroscopy) and XPS (X-ray Photoelectron Spectorscopy) technique.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
• /
• pp.49-52
• /
• 2002

Degradation characteristics of cathodoluminescence (CL) of ZnS:Ag,Cl phosphor were investigated with measurements of CL and photoluminescence (PL). Phosphoric acid treatment was performed to phosphor particles in order to improve CL degradation of phosphor screen that occurred during panel sealing process, and we will discuss mechanisms of degradation and improvement of luminescence mainly with help of AES (auger electron spectroscopy) analysis.

• 한국세라믹학회지
• /
• 제30권1호
• /
• pp.17-24
• /
• 1993

Sol-gel spin-coating technique was used to produce Nb2O5 thin films on silicon substrates from Nb(OC2H5)5 precursor. The films were heat-treated at temperatures between $600^{\circ}C$ and 100$0^{\circ}C$ in oxygen atmosphere and their crystalline phases, chemical states, and dielectric characteristics were investigated by X-ray diffractometry (XRD), Auger electron spectroscopy (AES), and C-V measurements, respectively. After 1 hour heat-treatment at 80$0^{\circ}C$, T-type Nb2O5 was formed, and its chemical composition was homogeneous with no appreciable SiO2 oxide at interfaces between the films and substrates. The films heat-treated at temperatures between $600^{\circ}C$ and 80$0^{\circ}C$ exhibit dielectric constant of less than 20 while the films heat treated at 100$0^{\circ}C$ show dielectric constant of 28.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2006년도 하계종합학술대회
• /
• pp.565-566
• /
• 2006

In this work, We study electrical characterization of $HfO_2$/Hf/Si films grown by Atomic Layer Deposition(ALD). Through AES(Auger Electron Spectroscopy), capacitance-voltage(C-V) and current-voltage(I-V) analysis, the role of Hf layer for the better $HfO_2$/Si interface property was investigated. We found that Hf metal layer in our structure effectively suppressed the generation of interfacial $SiO_2$ layer between $HfO_2$ film and silicon substrate.

• 한국표면공학회지
• /
• 제34권1호
• /
• pp.49-55
• /
• 2001

The addition of organic compound containing -COOH, X$800_2$, -CHO group such as formic acid, formamide, formaldehyde or diethyleneamine to a chromium electroplating bath results in a chromium deposit in which carbon is incorporated. Such deposits have fewer defects than chromium layers produced by a conventional method. It was found that the as-deposited layers were amorphous and auger electron spectroscopy (AES) showed that carbon is distributed uniformly in the deposit. During heat treatment, Cr-C deposits began to crystallize at $400^{\circ}C$, and at $800^{\circ}C$ they were crystallized into chromium carbides and oxides. The effects of current density, amount of additives, applied current waveform on Cr-C alloy electroplating were examined.