• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.263-263
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• 2011

본 연구에서는 DBD (Dielectric Barrier Discharge)방식의 상압 플라즈마를 이용하여 FPD (flat panel display) 공정에 사용되는 a-Si, Si3N4의 식각 공정 특성을 평가하였다. 사용된 DBD 반응기는 기존의 blank planar plate 형태의 Power가 인가되는 anode 부분과 Dielectric Barrier 사이 공간을 액상의 도전체로 채워 넣은 형태의 전극이 사용 하였으며, 인가 Power는 40kHz AC 최대인가 전압 15 kVp를 사용 하였다. 방전 가스는 N2, 반응가스로는 CDA (Clean Dry Air)와 NF3, 액상의 Etchant를 사용 하였으며 모든 공정은 In-line type으로 시편을 처리 하였다. NF3의 경우 30 mm/sec 이송속도 1회 처리 기준 a-Si 1300${\AA}$, Si3N4 1900${\AA}$의 식각 두께를 보였으며 a-Si : Si3N4 선택비는 N2, CDA의 조절을 통하여 최대 1:2에서 4:1 정도까지 변화가 가능하였다. 균일도는 G2 (370 mm${\times}$470 mm)의 경우 5.8 %의 균일도를 보이고 있다. 이외에도 NF3 공정의 경우 실제 TFT-LCD 공정 중 n+ channel (n+ a-Si:H)식각 공정에 적용하여 5.5 inch LCD panel feasibility를 확인 할 수 있었다. 액상 Etchant (HF수용액, NH4HF2)는 버블러를 사용하여 기화 시켜 플라즈마 소스를 통해 1차적으로 활성화 시키고 기존 DBD 반응기에 공급해 주는 형태로 평가를 진행하였다. 식각 특성은 30mm/sec 이송속도에서 a-Si $25{\AA}$ 정도로 가스 형태의 Etchant에 비해 매우 낮은 수준이나 Etching rate 향상을 위한 factor 파악 및 개선을 위한 연구를 진행 하였다.

• Journal of the Korean Society for Precision Engineering
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• v.18 no.1
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• pp.89-97
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• 2001

A microgyroscope, which vibrates in two orthogonal axes on the substrate plane, is designed and fabricated. The shuttle mass of the vibrating gyroscope consists of two parts. The one is outer shuttle mass which vibrates in driving mode guided by four folded springs attached to anchors. And the other is inner shuttle mass which vibrates in driving mode as the outer frame does and also can vibrate in sensing mode guided by four folded springs attached to the outer shuttle mass. Due to the directions of vibrating mode, it is possible to fabricate the gyroscope with simplified process by using polysilicon on insulator structure. Fabrication processes of the microgyroscope are composed of anisotropic silicon etching by RIE, gas-phase etching (GPE) of the buried sacrificial oxide layer, metal electrode formation. An eletromechanical model of the vibrating microgyroscope was modeled and bandwidth characteristics of the gyroscope operates at DC 4V and AC 0.1V in a vacuum chamber of 100mtorr. The detection circuit consists of a discrete sense amplifier and a noise canceling circuit. Using the evaluated electromechanical model, an operating condition for high performance of the gyroscope is obtained.

• Journal of Information Display
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• v.12 no.1
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• pp.47-50
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• 2011

Highly stable amorphous indium.gallium.zinc-oxide (a-IGZO) thin-film transistors (TFTs) were fabricated with an etchstopper and via-hole structure. The TFTs exhibited 40 $cm^2$/V s field-effect mobility and a 0.21 V/dec gate voltage swing. Gate-bias stress induced a negligible threshold voltage shift (${\Delta}V_{th}$) at room temperature. The excellent stability is attribute to the via-hole and etch-stopper structure, in which, the source/drain metal contacts the active a-IGZO layer through two via holes (one on each side), resulting in minimized damage to the a-IGZO layer during the plasma etching of the source/drain metal. The comparison of the effects of the DC and AC stress on the performance of the TFTs at $60^{\circ}C$ showed that there was a smaller ${\Delta}V_{th}$ in the AC stress compared with the DC stress for the same effective stress time, indicating that the trappin of the carriers at the active layer-gate insulator interface was the dominant degradation mechanism.

• Journal of Electrochemical Science and Technology
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• v.9 no.1
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• pp.9-19
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• 2018

The anodic behavior of aluminum (Al) foils with varying purity, capacitance, and withstand voltage in organic electrolytes was examined for EDLC. The results of cyclic voltammetry (CV) and chronoamperometry (CA) experiments showed that the electrochemical stability improves when Al foil has higher purity, lower capacitance, and higher withstand voltage. To improve the electrochemical stability of EDLC current collectors made of low-purity foil (99.4% Al foil), the foil was modified by chemical etching to reduce its capacitance to $60{\mu}F/cm^2$ and forming to have withstand a voltage of 3 Vf. EDLC cells using the modified Al foil as a current collector were made to 2.7 V with 360 F, and a constant voltage load test was subsequently performed for 2500 hours at high temperature under a rated voltage of 2.7 V. The reliability and stability of the EDLC cell improved when the modified Al foil was used as a current collector. To understand the deterioration process of the Al current collector, standard cells made of conventional Al foil under a constant voltage load test were disassembled, and the surface changes of the foil were measured every 500 hours. The Al foil became increasingly corroded, causing the adhesion between the AC coating layer and the Al foil to weaken, and it was confirmed that partial AC coating layer peeling occurred.

• Restorative Dentistry and Endodontics
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• v.16 no.1
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• pp.60-73
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• 1991

The purpose of this study is to evaluate the effects of etching time, environmental temperature and humidity on the adhesion of composite resin to glass-ionomer cement. Two chemical cure composite resins (Clearfil F II and Microrest AP) and two glass-ionomer cements (Fuji ionomer Type I and KET AC-CEM) were used as the experimental materials. The experiment is performed in 3 stages: The first stage is to bond composite resins to glass-ionomer cements, and the surface was not etched, and etched for 20 seconds, 40 seconds, and 60 seconds. Then specimens are stored in distilled water at $37^{\circ}C$ for 24 hours to measure tensile strength. The second stage is to choose the one group that had the highest tensile strength from the first stage and prepare two experimental groups: One group with composite resin bonded to glass-ionomer cement without etching and bonding agent application and the other with composite resin bonded to glass-ionomer cement with etching but without any bonding agent application. The specimens are stored in distilled water at $37^{\circ}C$ for 24 hours and tensile strength is measured. The third stage is to choose group that had the highest tensile strength from the first stage experiment, and bond composite resin to glass-ionomer cement at $24^{\circ}C$ 44%, $30^{\circ}C$ 44%, $30^{\circ}C$ 80%, and $32^{\circ}C$ 92%. The storage time of specimens is to bond immediately after storage, then changed to 30 sec., 60 sec., and 120 sec.. Specimens are stored in distilled water at $37^{\circ}C$ for 24 hours and their tensile strength are measured again. The following results were obtained: 1. As the etching time increases, the tensile bond strength between glass-ionomer cement and composite resin increase, and the tensile bond strength is the highest when acid etched for 60 minutes (P < 0.05). 2. After acid etching for 60 minutes, the tensile strength of the group with bonding agent was stronger than that without bonding agent application (P < 0.05). 3. The tensile strength of Clearfil F II was stronger than that of Microrest AP. 4. It was observed that the tensile bond strength is not affected by different storage time with different temperature and humidity. 5. As the humidity was increased, the tensile bond strength between glass-ionomer cement and composite resin decreased (P < 0.05).

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.2171-2176
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• 2007

The 3-omega (3-${\omega}$) method is utilized to measure the thermal conductivity of nanofluids. A metal line heater on a silicon nitride membrane bridge structure is microfabricated by a bulk silicon etching method. Localized measurement of the thermal conductivity within the nanofluids droplet is possible by the fabricated 3-${\omega}$ sensor. Time varying AC temperature amplitudes and thermal conductivities are measured to check the stability of the nanofluids containing multi-wall carbon nanotubes (MWCNTs). Stabilities of MWCNT nanofluids prepared with different chemical treatments are compared. Acid treated MWCNT showed best dispersion stability in water while MWCNTs dispersed in water with surfactants such as Gum Arabic and Sodium dodecyl benzene sulfate showed clear sign of gravity dependence.

• Journal of Korea Foundry Society
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• v.25 no.3
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• pp.134-141
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• 2005

To overcome the undesirable deformation, peeling off and geometrical restrictions which were mainly caused by differences in thermal expansion coefficients during the cladding of aluminum strip and stainless strip, new processing method based on vacuum die casting is designed and implemented in fabricating Al/Fe-17wt%Cr steel(stainless steel). To increase cast-bonding ability, the surface of Fe-17wt%Cr steel is electrochemically etched to have optimum pit size and density. The optimum conditions to generate best pit are as follows: Solution: 1 M $Fecl_{3}$+1 M Nacl, Addition: $CuCl_{2}+HCl$, Current density: 80 $mA/cm^{2}$, Total current: 400 $coulomb/cm^{2}$, AC frequency :60 Hz.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.212-212
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• 1999

Ar-O2 분위기의 Plasma 표면 처리된 OPP 의 polymer 위에 약 400$\AA$ 정도로 sputter 코팅된 Al의 부착력에 관하여 연구를 하였다. 금속과 polymer와 같이 성질이 서로 다른 물질이 서로 결합할 때 접착력은 제품의 성능과 신뢰도를 결정하는데 매우 중요한 인자이다. 최근 고분자재료의 표면을 플라즈마 처리 (plasma surface treatment)에 의해 고분자와 금속도포(coating) 층간의 접착력향상에 따라, 증착필름 및 인쇄용 필름 등의 기능도 향상시킬 수 있다. 저온 plasma를 이용한 표면처리는 plastic 재료가 가지고 있는 기본적인 특성을 저해하지 않고, 그 표면 층만을 개량하는 plasma 또는 sputter etching 갚은 electrical discharge 방법은 진공 증착 방식에서 많이 사용되고 있다. 7$\mu\textrm{m}$의 두께 OPP polymer를 10m/min의 속도로 OPP의 표면을 연속 plasma pretreatment를 하였다. 5$\times$10-2torr에서, PEM(Plasma Emission Monitor)를 이용하여 plasma intensity에 따른 Ar/O2비를 변화시키면서 test를 하였다. AFM과 XPS를 이용하여 OPP의 표면분석을 하였다. 이 plasma처리는 기존의 D.C plasma 처리 방식과는 달리 Midium frequency AC voltage hollow cathod 방식으로 plasma를 발생된 high energy plasma 분위기를 만들 수 있다. 이러한 방식은 -cycle일 때 plasma로부터 발생된 전자가 polymer 표면을 bombard 하게 되고, +cycle 일 때 polymer 표면이 cathod 가 되어 active ion에 의해 sputtering 이 된다. 이때 plasma 처리기의 polymer 기판 후면에 magnet를 설치하여 높은 ionization을 발생시켜 처리 효과를 한층 높여 주었다. 이 plasma 처리는 표면 청정화, 표면 etching 이 동시에 행하는 것과 함께 장시간 처리에 의해 표면에서는 미세한 과, C=C기, -C-O-의 극성기의 도입에 의한 표면 개량이 된다는 것을 관찰할 수 있다. OPP polymer 표면을 Ar 100%로 plasma 처리한 경우 C-O, C=O 등의 carbonyl가 발생됨을 알 수 있었다. C-O, C=O 등의 carbynyl polor group이 도입됨에 따라 sputter된 Al의 접착력이 향상됨을 알 수 있으며, TEM 관찰 결과 grain size도 상당히 작아짐을 알 수 있었다.

• Progress in Superconductivity
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• v.11 no.1
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• pp.72-77
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• 2009

Low temperature scanning laser microscopy (LTSLM) can be used for a two-dimensional display of bolometric response arising from the localized excitation of a sample by the focused laser beam. In this study, the distribution of critical temperature ($T_c$) and critical current density ($J_c$) in YBCO coated conductor were analyzed using LTSLM. For improving the temperature stability, we have modified the system into a double-shielding type. Through the modification, the temperature stability was successfully improved from ${\pm}10mK\;to\;{\pm}2mK$. The superconducting properties of YBCO coated conductors were measured for the sample of a narrow bridge type using wet etching process. The spatial non-uniformity of the ac voltage response, ${\delta}V(x)$, which is proportional to ${\partial}\rho(x,J_B)/{\partial}T$ in the transition temperature region could be observed and displayed in a two-dimensional image.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.9
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• pp.104-113
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• 1994

We have fabricated n-p-n HBTs using 3-inchAlgaAs/GaAs hetero structure epi-wafers grown by MBE. DC and AC characteristics of HBT devices were measured and analyzed. For HBT epi-structure, Al composition of emitter was graded in the region between emitter cap and emitter. And base layer was designed with concentration of 1${\times}10^{19}/cm^{3}$ and thickness of 50nm, and Be was used as the p-type dopant. Principal processes for device fabrication consist of photolithography using i-line stepper, wet mesa etching, and lift-off of each ohmic metal. The PECVD SiN film was used as the inslator for the metal interconnection. HBT device with emitter size of 3${\times}10{\mu}m^{2}$ resulted in cut-off frequency of 35GHz, maximum oscillation frequency of 21GHz, and current gain of 60. The distribution of the ideality factor of collector and base current was very uniform, and the average values of off-set voltage and current was very uniform, and the average values of off-set voltage and current gain were 0.32V and 32 within a 3-inch wafer.