• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.665-668
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• 2006

Sodium is a serious contamination in LTPS TFT process. It causes the abnormal characteristics of TFT in operation. Contaminated areas can be seen in SEM images, but EDX measurements do not have adequate sensitivity to confirm the presence of superficial sodium residues. We employed SIMS as a fast analysis method to map the non-uniform distribution of sodium on the surface. SIMS can also indicate the thickness of the contamination.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.21-25
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• 2005

In order to implement high pixel density in AMLCDs, high aperture ratio is a very important design factor. We have implemented VGA panels with IPS and TN modes. IPS mode is a very attractive solution to meet the requirement for mobile phone displays. It provides much higher aperture ratio as well as wider viewing angle at extremely high pixel density over 400 ppi.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.254-257
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• 2009

The crystallization and activated annealing effect of Si films using an excimer laser and a new CW blue laser are described comparing with furnace annealing (SPC) for the application of advanced TFTs and future applications. Currently, pulsed ELA is used extensively as a LTPS process on glass substrates as the efficiency is high in UV region for thin Si film of 40- 60 nm thickness. ELA enables extremely low resistivity for both n- and p-typed Si films. On the other hand, CW BLDA enables the smooth Si surface having arbitral grains from micro-grains to anisotropic huge grain structure only controlling its power density.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.911-914
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• 2007

We developed the laser annealing system using green laser of 261W(5kHz) and 75.5mJ/pulse(2kHz). We confirmed that this system makes it possible to form two kinds(large or uniformed grain) of poly-Si by changing its polarized directions. By using ${\mu}-crystal-Si$ as irradiated films, grain size uniformity is better than that using a-Si.

• Information Display
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• v.6 no.5
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• pp.4-9
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• 2005

There has been a new trend to integrate various kinds of circuits by low temperature polycrystalline silicon thin film transistor (LTPS TFT) on insulator substrates to achieve System on Panel (SOP) for flat panel displays. In this paper, we will review the trend of the SOP and discuss the utility and future possibility of the SOP.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.13-16
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• 2008

Mobile phones are evolving into a platform for internet access. In order to display web pages in handsets, WVGA and around 3-inch displays are strongly recommended. Low power consumption, compactness and narrow boarder area are essential. The general requirements for WVGA solution and the design factors to reduce the power consumption and boarder area discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.841-844
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• 2005

There has been a new trend to integrate various kinds of circuits by low temperature polycrystalline silicon thin film transistor (LTPS TFT) on insulator substrates to achieve System on Panel (SOP) for flat panel displays. In this paper, we will review the trend of the SOP and discuss the utility and future possibility of the SOP.

• Journal of Convergence for Information Technology
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• v.9 no.3
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• pp.75-81
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• 2019

In this work, we investigated a low temperature polycrystalline silicon (LTPS) thin film transistors fabrication process on polymer layers. Dehydrogenation and activation processes were performed by a furnace annealing at a temperature of $430^{\circ}C$ for 2 hr. The crystallization of amorphous silicon films was formed by excimer laser annealing (ELA) method. The p-type device performance, fabricated by polycrystalline silicon (poly-Si) films, shows a very good performance with field effect mobility of $77cm^2/V{\cdot}s$ and on/off ratio current ratio > $10^7$. We believe that the poly-Si formed by a LTPS process may be well suited for fabrication of poly-Si TFTs for bendable panel displays such as AMOLED that require circuit integration.

• Molecules and Cells
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• v.24 no.2
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• pp.215-223
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• 2007

The genes encoding non-specific lipid transfer proteins (nsLTPs), members of a small multigene family, show a complex pattern of expressional regulation, suggesting that some diversification may have resulted from changes in their expression after duplication. In this study, the evolution of nsLTP genes within the Poaceae family was characterized via a survey of the pseudogenes and unigenes encoding the nsLTP in rice pseudomolecules and the NCBI unigene database. nsLTP-rich regions were detected in the distal portions of rice chromosomes 11 and 12; these may have resulted from the most recent large segmental duplication in the rice genome. Two independent tandem duplications were shown to occur within the nsLTP-rich regions of rice. The genomic distribution of the nsLTP genes in the rice genome differs from that in wheat. This may be attributed to gene migration, chromosomal rearrangement, and/or differential gene loss. The genomic distribution pattern of nsLTP genes in the Poaceae family points to the existence of some differences among cereal nsLTP genes, all of which diverged from an ancient gene. The unigenes encoding nsLTPs in each cereal species are clustered into five groups. The somewhat different distribution of nsLTP-encoding EST clones between the groups across cereal species imply that independent duplication(s) followed by subfunctionalization (and/or neofunctionalization) of the nsLTP gene family in each species occurred during speciation.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.647-650
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• 2006

Low temperature polycrystalline silicon (LTPS) technology using a high power laser have been widely applied to thin film transistors (TFTs) for liquid crystal, organic light emitting diode (OLED) display, driver circuit for system on glass (SOG) and static random access memory (SRAM). Recently, the semiconductor industry is continuing its quest to create even more powerful CPU and memory chips. This requires increasing of individual device speed through the continual reduction of the minimum size of device features and increasing of device density on the chip. Moreover, the flat panel display industry also need to be brighter, with richer more vivid color, wider viewing angle, have faster video capability and be more durable at lower cost. Kornic Systems Co., Ltd. developed the $KORONA^{TM}$ LTP/GLTP series - an innovative production tool for fabricating flat panel displays and semiconductor devices - to meet these growing market demands and advance the volume production capabilities of flat panel displays and semiconductor industry. The $KORONA^{TM}\;LTP/GLTP$ series using DPSS laser and XeCl excimer laser is designed for the new generation of the wafer & FPD glass annealing processing equipment combining advanced low temperature poly-silicon (LTPS) crystallization technology and object-oriented software architecture with a semistandard graphical user interface (GUI). These leading edge systems show the superior annealing ability to the conventional other method. The $KORONA^{TM}\;LTP/GLTP$ series provides technical and economical benefits of advanced annealing solution to semiconductor and FPD production performance with an exceptional level of productivity. High throughput, low cost of ownership and optimized system efficiency brings the highest yield and lowest cost per wafer/glass on the annealing market.