• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.43 no.10 s.352
• /
• pp.61-67
• /
• 2006

We developed a constant current source which is insensitive to threshold voltage variation caused by irregular grain boundary distribution in polycrystalline silicon. The proposed current source has superior saturation characteristics over wide range of input voltages as well as small current error compared to the previously reported Vth compensated sources. We measured the circuit performance and error in current due to parameter variation by using HSPICE.

• Journal of Information Display
• /
• v.11 no.1
• /
• pp.12-16
• /
• 2010

The effect of the crystallization and activated annealing of Si films using an excimer laser and the new CW blue laser are described and compared with furnace annealing for application in advanced TFTs and for future applications. Pulsed excimer laser annealing (ELA) is currently being used extensively as a low-temperature poly-silicon (LTPS) process on glass substrates as its efficiency is high in the ultra-violet (UV) region for thin Si films with thickness of 40-60 nm. ELA enables extremely low resistivity relating to high crystallinity for both the n- and p-type Si films. On the other hand, CW blue laser diode annealing (BLDA) enables the smooth Si surface to have arbitral crystal grains from micro-grains to an anisotropic huge grain structure only by controlling its power density. Both annealing techniques are expected to be applied in the future advanced TFT systems.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.399-402
• /
• 2006

A new voltage-scaled compensation pixel which employs 3 p-type poly-Si TFTs and 2 capacitors without additional control line has been proposed and verified. The proposed pixel does not employ the $V_{TH}$ memorizing and cancellation, but scales down the inevitable $V_{TH}$ variation of poly-Si TFT. Also the troublesome narrow input range of $V_{DATA}$ is increased and the $V_{DD}$ supply voltage drop is suppressed. In our experimental results, the OLED current error is successfully compensated by easily controlling the proposed voltage scaling effects.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.626-629
• /
• 2003

In order to achieve high-resolution and large-size displays, inspection technology is necessary and important. It is a powerful utility for process and yield improvement for the high valued panel realization. We indicated the challenge of advanced panel manufacturing on inspection ability and throughput. We also investigated the method to judge laser-crystallizing energy by inspection technology. Finally, the total defect number and critical killer defects were classified and discussed in this work.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.149-152
• /
• 2003

Soruce/drain (or, LDD) formation technology is critical to device reliability especially in the case of short channel LTPS-TFT devices. Ion shower doping with a main ion source of $P_2H_x$ was conducted on ELA Poly-Si. We report the effects of annealing methods on dopant activation and damage recovery in ion-shower doped poly-Si.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.325-328
• /
• 2002

We developed a high performance 2.2" active matrix OLED display for IMT-2000 mobile phone. Scan and Data driver circuits were integrated on the glass substrate, using low temperature poly-Si(LTPS) TFT CMOS technology. High efficiency EL materials were employed to the panel for low power consumption. Peak luminescence of the panel was higher than 250cd/$m^2$ with power consumption of 200mW.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07a
• /
• pp.665-667
• /
• 2005

VIATRON TECHNOLOGIES has developed FE-RTP system that enables LTPS LCD and AMOLED manufacturers to produce poly-Si films at low cost, high throughput, and high yield. The system employs sequential heat treatment methods using temperature control and rapid thermal processor modules. The temperature control modules provide exceptionally uniform heating and cooling of the glass substrates to within ${\pm}2^a\;C$. The rapid thermal process that combines heating with field induction accelerates the treatment rates. The new FE-RTP system can process $730{\times}920mm$ glass substrates as thin as 0.4 mm. The uniform nature of poly-Si films produced by FE-RTP resulted in AMOLED panels with no laser-Muras. Furthermore, FE-RTP system also showed superior performances in other heat treatment processes involved in poly-Si TFT fabrications, such as dopant activation, gate oxide densification, hydrogenation, and pre-compaction.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07a
• /
• pp.676-678
• /
• 2005

Future Mobile displays and the emerging systems on Glass for the upcoming TFT_LCDs or Active-OLEDs based on LTPS, and the exciting c-Si critically require very-high resolution lithography. We report the methodology and latest results on the alignment, magnification control and stitching systems on a HMA500 holographic mask aligner for printing $0.5{\mu}m-resolution$ display patterns onto glass substrates of dimensions up to $500mm{\times}400mm$.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07a
• /
• pp.562-566
• /
• 2005

Toshiba Matsushita Display Technology (TMD) has firstly succeeded in mass production of OCB (Optically Compensated Bend) mode liquid crystal display panels which have excellent moving picture quality almost the same as CRT. We have newly developed 32 -inch diagonal HD ($1366{\times}768\;pixels$) panels using OCB mode and low temperature p-Si TFT (LTPS) array substrates. High performance of brightness of $600cd/m^2$ and contrast ratio of 600 : 1 was obtained by using pseudo-impulse driving method to insert a black period between continuous two frames, and also by using blinking backlight method. Furthermore, moving picture response time (MPRT) 6.5ms has been obtained by optimization of black insert driving and backlight blinking, without the great sacrifices of contrast ratio and luminance.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07a
• /
• pp.799-802
• /
• 2005

This paper described a 2.2" $QCIF^+$ ($176{\times}RGB{\times}220$) active matrix organic light-emitting diode display (AMOLED) using low-temperature poly-silicon (LTPS) technology. We have designed the OLED pixel to match the OLED material characteristic with COG specification and optimized pixel structure to improve color gamma adjustment and simplify signal complexity.