• Title/Summary/Keyword: A charge

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간결한 예측 모형에 기반한 납축전지의 정전류-정전압 충전시간 특성화 (CC-CV Charging Time Characteristics of Lead-Acid Batteries Based on Compact Estimation Model)

  • 한정견;신동화
    • 대한임베디드공학회논문지
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    • 제11권5호
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    • pp.305-312
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    • 2016
  • Modern embedded systems are typically operated by the rechargeable batteries in our daily life. Since charge of batteries is considered as an time consuming task, there have been extensive efforts to manage the charge time from the perspective of materials, circuits, and systems. Estimation of battery charge time is one of the essential information to design the charge circuitry. A compact macro model for the constant-current and constant-voltage charge protocol was recently introduced, which gives us a quick estimation of charge time with similar shape to the famous Peukert's law for discharge time estimation. The CC-CV charging protocol is widely used for Lithium-based batteries and Lead-acid batteries. In this paper, we characterize the lead-acid battery by measurement to extract the model coefficients, which was not covered by the previous studies. By our proposed model, the key coefficient Kcc results in 1.18-1.31, which is little bit higher than that of Lithium batteries. The accuracy of our model is within the range of ${\pm}10%$ error, which is compatible with the other studies such as Peukert's law.

Charge Pumping Measurements Optimized in Nonvolatile Polysilicon Thin-film Transistor Memory

  • 이동명;안호명;서유정;김희동;송민영;조원주;김태근
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.331-331
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    • 2012
  • With the NAND Flash scaling down, it becomes more and more difficult to follow Moore's law to continue the scaling due to physical limitations. Recently, three-dimensional (3D) flash memories have introduced as an ideal solution for ultra-high-density data storage. In 3D flash memory, as the process reason, we need to use poly-Si TFTs instead of conventional transistors. So, after combining charge trap flash (CTF) structure and poly-Si TFTs, the emerging device SONOS-TFTs has also suffered from some reliability problem such as hot carrier degradation, charge-trapping-induced parasitic capacitance and resistance which both create interface traps. Charge pumping method is a useful tool to investigate the degradation phenomenon related to interface trap creation. However, the curves for charge pumping current in SONOS TFTs were far from ideal, which previously due to the fabrication process or some unknown traps. It needs an optimization and the important geometrical effect should be eliminated. In spite of its importance, it is still not deeply studied. In our work, base-level sweep model was applied in SONOS TFTs, and the nonideal charge pumping current was optimized by adjusting the gate pulse transition time. As a result, after the optimizing, an improved charge pumping current curve is obtained.

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부분 전하의 의미와 정의 (Meaning and Definition of Partial Charges)

  • 조승주
    • 통합자연과학논문집
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    • 제3권4호
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    • pp.231-236
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    • 2010
  • Partial charge is an important and fundamental concept which can explain many aspects of chemistry. Since a molecule can be regarded as neclei surrounded by electron cloud, there is no way to define a partial charge accurately. Nevertheless, there have been many attempts to define these seemingly impossible parameters, since they would facilitate the understanding of molecular properties such as molecular dipole moment, solvation, hydrogen bonding, molecular spectroscopy, chemical reaction, etc. Common methods are based on the charge equalization, orbital occupancy, charge density, and electric multipole moments, and electrostatic potential fitting. Methods based on the charge equalization using electronegativity are very fast, and therefore they have been used to study many compounds. Methods to subdivide orbital occupancy using basis set conversion, relies on the notion that molecular orbitals are composed of atomic orbitals. The main idea is to reduce overlap integral between two nuclei using converted orthogonal basis sets. Using some quantum mechanical observables like electrostatic potential or charge multipole moments. Using potential grids obtained from wavefunction, partial charges can be fitted. these charges are most useful to describe intermolecular electrostatic interactions. Methods to using dipole moment and its derivatives, seems to be sensitive the level of theory, Dividing electron density using density gradient being the most rigorous theoretically among various schemes, bears best potential to describe the charge the most adequately in the future.

더미 비트라인을 이용한 저전력 전하공유 롬 (A Low Power Charge Sharing ROM using Dummy Bit Lines)

  • 양병도;김이서
    • 대한전자공학회논문지SD
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    • 제41권5호
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    • pp.99-105
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    • 2004
  • 더미 비트라인을 이용한 공유 커패시터 전하공유 롬(shared-capacitor charge-sharing ROM SCCS-ROM)이 제안되었다. SCCS-ROM은 기존의 전하공유 롬(charge-sharing ROM, CS-ROM)의 전하공유 기법으로 비트라인의 스윙전압을 줄였다. CS-ROM에서는 출력 비트 마다 3개의 작은 커패시턴스들이 필요하지만, 제안된 SCCS-ROM은 그 커패시터들을 공유함으로써 필요한 커패시터의 수를 단지 3개로 줄였다. 또한, 더미 비트라인들(dummy bit lines)로 커패시터들을 구현함으로써, 잡음내성을 증가시켰을 뿐만 아니라 소모전력 또한 줄였다. 8K×15bi1s의 SCCS-ROM이 0.35㎛ CMOS 공정으로 구현되었다. SCCS-ROM은 3.3V의 100㎒ 동작에서 8.63㎽의 전력을 소모하였다. 시뮬레이션에서 SCCS-ROM은 CS-ROM보다 8.4% 적은 전력을 소모하였다.

조절발파를 위한 성형폭약의 제작과 성능 평가 (Development and Performance Evaluation of Shaped Charge for Controled Blasting)

  • 김정규;양형식;김종관
    • 화약ㆍ발파
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    • 제34권3호
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    • pp.1-9
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    • 2016
  • 성형폭약의 조절발파 효과를 확인하기 위하여 정밀폭약에 금속라이너의 재질과 두께를 달리하여 상대적으로 폭속이 작은 암석 절단용 성형폭약을 제작하였다. 성형폭약이 암반 내부에서 기폭될 때 방향성 절단을 유도하기 위하여 폭약 양쪽으로 금속라이너를 부착하였다. 또한 콘크리트 부재 실험을 통하여 성형폭약의 성능을 확인하였고 성형폭약과 공벽과의 적정 이격거리를 유지하기 위한 센터 가이더를 제작하였다. 실험결과 0.8mm 두께의 Fe 라이너가 장착된 성형폭약을 사용할 때 가장 깊은 노치가 형성되었고, 콘크리트 부재의 방향성 절단을 확인할 수 있었다.

고분자 재료의 고온하분포특성 (Space charge characteristics in several polymers at high temperature)

  • 남진호;고정우;서광석
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.84-87
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    • 2001
  • Space charge formation at high temperature was investigated in several polymers using pulsed electro-acoustic (PEA) method. In SXLPE, homocharge is found and increased as an increase of temperature. In a charge of polarity of poling voltage(positive to negative), space charge mainly cause of hole injection. In Ionomer, heterocharge is found because of ion. As an increase of temperature heterocharge is also increased. In PET, As an increase of temperature homocharge is decreased.

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AC PDP의 벽전하 분포를 이용한 유지 펄스의 전압 마진 결정 (Decision of the Margin of the Sustain Voltage Based on the Wall-Charge Distribution)

  • 하영석;권오경
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2000년도 하계종합학술대회 논문집(5)
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    • pp.77-80
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    • 2000
  • This paper describes a new method to decide the margin for the sustain voltage of AC PDPs based on the wall-charge distribution. We model the discharge cell and measure the wall-charge when sustain pulses are applied to the AC PDP. The measured wall-charge distribution informs us of the voltage forming the maximum wall-charge which should be chosen as the sustain voltage.

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Ni-MH 전지전원의 모델링과 충.방전 장치 개발 (Modeling of The Ni-MH Battery Source and Development of The Charger.Discharger System)

  • 김광헌;허민호;박영수;안재영;양승학;이일기
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 1998년도 전력전자학술대회 논문집
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    • pp.433-437
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    • 1998
  • Equalize SOC of the cell which effect on the charge.discharge ability and the efficiency of the battery, through the charge.discharge characteristic test of the battery source, and develope the high efficiency charge.discharge system in the series HEV have a constant engine-generator output. For this, in this paper, establish the electrical model and the condition of high efficiency charge.discharge, and proposed the improvement method of charge.discharge characteristic in the battery source that consist of twenty Ni-MH cells connected serial/parallel

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Evaluation of a Fabricated Charge Sensitive Amplifier for a Semiconductor Radiation Detector

  • Kim, Han-Soo;Ha, Jang-Ho;Park, Se-Hwan;Lee, Jae-Hyung;Lee, Cheol-Ho
    • Journal of Radiation Protection and Research
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    • 제35권2호
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    • pp.81-84
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    • 2010
  • A CSA(Charge Sensitive Amplifier) was designed and fabricated for application in a radiation detection system based on a semiconductor detector such as Si, SiC, CdZnTe and etc.. A fabricated hybrid.type CSA was evaluated by comparison with a commercially available CSA. A comparison was performed by using calculation of ENC (Equivalent Noise Charge) and by using energy resolutions of fabricated radiation detectors based on Si. In energy resolution comparison, a fabricated CSA showed almost the same performance compared with a commercial one. In this study, feasibility of a fabricated CSA was discussed.

용량형 센서를 위한 마이크로컨트롤러에 기반을 둔 록인 증폭기 (A Microcontroller-Based Lock-In Amplifier for Capacitive Sensors)

  • 김청월
    • 센서학회지
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    • 제23권1호
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    • pp.24-28
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    • 2014
  • A lock-in amplifier was proposed for capacitive sensor applications. This amplifier was based on a general-purpose microcontroller and had only a charge amplifier as analog circuits. All the other functions of lock-in amplifier except for the charge amplifier were implemented with firmware and the internal resources of the microcontroller. A rectangular signal, generated by the microcontroller, was used in a sensor-driving signal instead of a conventional sinusoidal signal. This makes it possible that the phase comparison circuit in the lockin amplifier is made with analog-to-digital converter, a timer and an interrupt controller. Using the oversampling method and the rectangular driving signal, we can make it easy to implement the peak detection function with software and sample the peak-to-peak signal at charge amplifier output. A charge amplifier was proposed to cancel out the base capacitance existing in capacitive sensors structurally. The experimental results show that the lock-in amplifier operating in the supply voltage of 3.0 V cancels out the base capacitance and has good linearity.