• Title/Summary/Keyword: A Drain Noise

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A Novel Varactor Diodeless Push-Push VCO with Wide Tuning Range (바렉터 다이오드를 이용하지 않은 광대역 Push-Push 전압제어 발진기)

  • Lee Moon-Que;Moon Seong-Mo;Min Sangbo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.4 s.95
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    • pp.345-350
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    • 2005
  • An X-band push-push VCO for low cost applications is proposed. The designed push-push oscillator achieves a wide tuning range in the X-band by the collector bias tuning instead of extra varactor diodes. The measurement shows a wide tuning bandwidth of $900\;\cal{MHz}\;from\;10.9\;\cal{GHz}\;to\;11.8\;\cal{GHz}$ with a drain bias voltage varying from 4 to 9 V, excellent fudamental suppression of $-30\;\cal{dBc}$ and good phase noise of $-115\;\cal{dBc/Hz}\;@\;1\;\cal{MHz}$ offset.

Highly Linear Wideband LNA Design Using Inductive Shunt Feedback (Inductive Shunt 피드백을 이용한 고선형성 광대역 저잡음 증폭기)

  • Jeonng, Nam Hwi;Cho, Choon Sik
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.11
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    • pp.1055-1063
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    • 2013
  • Low noise amplifiers(LNAs) are an integral component of RF receivers and are frequently required to operate at wide frequency bands for various wireless systems. For wideband operation, important performance metrics such as voltage gain, return loss, noise figures and linearity have been carefully investigated and characterized for the proposed LNA. An inductive shunt feedback configuration is successfully employed in the input stage of the proposed LNA which incorporates cascaded networks with a peaking inductor in the buffer stage. Design equations for obtaining low and high input matching frequencies are easily derived, leading to a relatively simple method for circuit implementation. Careful theoretical analysis explains that poles and zeros are characterized and utilized for realizing the wideband response. Linearity is significantly improved because the inductor between gate and drain decreases the third-order harmonics at the output. Fabricated in $0.18{\mu}m$ CMOS process, the chip area of this LNA is $0.202mm^2$, including pads. Measurement results illustrate that input return loss shows less than -7 dB, voltage gain greater than 8 dB, and a little high noise figure around 7~8 dB over 1.5~13 GHz. In addition, good linearity(IIP3) of 2.5 dBm is achieved at 8 GHz and 14 mA of current is consumed from a 1.8 V supply.

The 1/f Noise Analysis of 3D SONOS Multi Layer Flash Memory Devices Fabricated on Nitride or Oxide Layer (산화막과 질화막 위에 제작된 3D SONOS 다층 구조 플래시 메모리소자의 1/f 잡음 특성 분석)

  • Lee, Sang-Youl;Oh, Jae-Sub;Yang, Seung-Dong;Jeong, Kwang-Seok;Yun, Ho-Jin;Kim, Yu-Mi;Lee, Hi-Deok;Lee, Ga-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.2
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    • pp.85-90
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    • 2012
  • In this paper, we compared and analyzed 3D silicon-oxide-nitride-oxide-silicon (SONOS) multi layer flash memory devices fabricated on nitride or oxide layer, respectively. The device fabricated on nitride layer has inferior electrical properties than that fabricated on oxide layer. However, the device on nitride layer has faster program / erase speed (P/E speed) than that on the oxide layer, although having inferior electrical performance. Afterwards, to find out the reason why the device on nitride has faster P/E speed, 1/f noise analysis of both devices is investigated. From gate bias dependance, both devices follow the mobility fluctuation model which results from the lattice scattering and defects in the channel layer. In addition, the device on nitride with better memory characteristics has higher normalized drain current noise power spectral density ($S_{ID}/I^2_D$>), which means that it has more traps and defects in the channel layer. The apparent hooge's noise parameter (${\alpha}_{app}$) to represent the grain boundary trap density and the height of grain boundary potential barrier is considered. The device on nitride has higher ${\alpha}_{app}$ values, which can be explained due to more grain boundary traps. Therefore, the reason why the devices on nitride and oxide have a different P/E speed can be explained due to the trapping/de-trapping of free carriers into more grain boundary trap sites in channel layer.

Performance Evaluation of Surface Textures on Concrete Pavement (콘크리트 거친면 마무리처리에 따른 공용성 평가)

  • Park, Kwon-Je;Mun, Jun-Beom;Cho, Yoon-Ho
    • International Journal of Highway Engineering
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    • v.6 no.1 s.19
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    • pp.1-11
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    • 2004
  • This study tries to propose the most effective pavement texture method through the performance evaluation of variable texture methods. Noise 2$\sim$3dB is reduced in the section of uniform space 18m longitudinal tinning. This result is proved by comparing the magnitude of noise in two sections. The noise of 26mm longitudinal firming section is greater than that of 18mm section by 2$\sim$3dB(A). The skid resistances measured in all test section show the reasonable results. The roughness or all the test sections satisfies AASHTO roughness standard (PrI 16cm/km). The result or questionnaire survey about driving quality shows that the longitudinal tinning is the most effective method. As the result of a visual measurement, it is proved that the section applied uniform space 26mm longitudinal tinning and the general section applied uniform space 26mm transverse tinning could drain water effectively. As the result of analysis with the ranking method, the 18mm longitudinal tinning in selected as one of the most effective tinning methods. In addition, 26mm longitudinal tinning, random space transverse tinning, and transverse drag are selected in order.

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Improvement of Acoustic Emission Signal Processing Method and Source Location using Wavelet Transform (웨이블릿 변환을 이용한 음향방출 신호의 처리기법 개선 및 위치표정)

  • Kim, Dong-Hyun;Park, Il-Suh;Chung, Won-Yong;Park, Yong-Suk
    • Journal of the Institute of Convergence Signal Processing
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    • v.9 no.1
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    • pp.10-17
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    • 2008
  • The purpose of this thesis is to reduce of error for source location through acoustic emission(AE) signal, generated elastic wave from crack growth to leak for facility diagnosis. Especially, in order to overcome noise from original signal, this paper proposed enhancement of source location by using noise reduction based on wavelet transform. To evaluate actual performance in experiments, Pencil Lead Break is used crack signal source on the aluminum plate and drain valve of air compressor is used as substitute pressure vessel to generate leak signal. In signal processing, wavelet shrinkage and soft threshold are used to discriminate signal source and then source location techniques have been effectively used with group velocity using material property and time difference between sensor using cross correlation. Source location for crack and leak test have some difference, but the result show that improved 30% with a average length within 10.46mm in crack test and improved 2% compare with average filter in leak test when we applied wavelet transform.

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Capacitive Sensor for in situ Measurement of Deterioration of Car Engine Oil (자동차 엔진오일 열화상태 in situ 측정용 전기용량 센서)

  • Lee, R.D.;Kim, H.J.;Semenov, Yu. P.
    • Journal of Sensor Science and Technology
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    • v.10 no.4
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    • pp.266-272
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    • 2001
  • A coil-type capacitive sensor on which the deterioration of the car engine oil can be in situ measured, has been developed. The sensor was designed to get over 10 pF at the limited space on the drain hole of the oil pan. The design factors for stable capacitance measurement such as coil diameter and winding condition, materials and configuration of the coil former, and shielding method, etc., were known by both computer simulation and experimental investigations. The dielectric properties measured by several sensors for an used sample oil were consisted within 0.25%. The sensor installed on the car having severe vibration, temperature and humidity fluctuation, even electromagnetic noise, has shown very distinguishable results.

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Studies on the High-gain Low Noise Amplifier for 60 GHz Wireless Local Area Network (60 GHz 무선 LAN의 응용을 위한 고이득 저잡음 증폭기에 관한 연구)

  • 조창식;안단;이성대;백태종;진진만;최석규;김삼동;이진구
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.11
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    • pp.21-27
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    • 2004
  • In this paper, millimeter-wave monolithic integrated circuit(MIMIC) low noise amplifier(LNA) for V-band, which is applicable to 60 GHz wireless local area network(WLAN), was fabricated using the high performance 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate pseudomorphic high electron mobility transistor(PHEMT). The DC characteristics of PHEMT are drain saturation current density(Idss) of 450 mA/mm and maximum transconductance(gm, max) of 363.6 mS/mm. The RF characteristics were obtained the current gain cut-off frequency(fT) of 113 GHz and the maximum oscillation frequency(fmax) of 180 GHz. V-band MIMIC LNA was designed using active and passive device library, which is composed of 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate PHEMT and coplanar waveguide(CPW) technology. The designed V-band MIMIC LNA was fabricated using integrated unit processes of active and passive device. The measured results of V-band MIMIC LNA are shown S21 gain of 21.3 dB, S11 of -10.6 dB at 60 GHz and S22 of -29.7 dB at 62.5 GHz. The measured result of V-band MIMIC LNA was shown noise figure (NF) of 4.23 dB at 60 GHz.

A Study on the Design of a Beta Ray Sensor Reducing Digital Switching Noise (디지털 스위칭 노이즈를 감소시킨 베타선 센서 설계)

  • Kim, Young-Hee;Jin, Hong-Zhou;Cha, Jin-Sol;Hwang, Chang-Yoon;Lee, Dong-Hyeon;Salman, R.M.;Park, Kyung-Hwan;Kim, Jong-Bum;Ha, Pan-Bong
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.13 no.5
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    • pp.403-411
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    • 2020
  • Since the analog circuit of the beta ray sensor circuit for the true random number generator and the power and ground line used in the comparator circuit are shared with each other, the power generated by the digital switching of the comparator circuit and the voltage drop at the ground line was the cause of the decreasein the output signal voltage drop at the analog circuit including CSA (Charge Sensitive Amplifier). Therefore, in this paper, the output signal voltage of the analog circuit including the CSAcircuit is reduced by separating the power and ground line used in the comparator circuit, which is the source of digital switching noise, from the power and ground line of the analog circuit. In addition, in the voltage-to-voltage converter circuit that converts VREF (=1.195V) voltage to VREF_VCOM and VREF_VTHR voltage, there was a problem that the VREF_VCOM and VREF_VTHR voltages decrease because the driving current flowing through each current mirror varies due to channel length modulation effect at a high voltage VDD of 5.5V when the drain voltage of the PMOS current mirror is different when driving the IREF through the PMOS current mirror. Therefore, in this paper, since the PMOS diode is added to the PMOS current mirror of the voltage-to-voltage converter circuit, the voltages of VREF_VCOM and VREF_VTHR do not go down at a high voltage of 5.5V.

3-D Simulation of Pyroelectric IR Sensor and Design of Optimized Peripheral Circuit (초전형 적외선 센서의 3차원 모델링과 최적화된 주변회로 설계)

  • Min, Kyung-Jin;Kang, Seong-Jun;Yoon, Yung-Sup
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.10
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    • pp.33-41
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    • 2000
  • Pyroelectric characteristics such as voltage responsivity, noise equivalent power and detectivity are modeled 3-dimensionaly considering th interaction of each parameters. Also, the circuit is designed to set up the frequency band width and the signal amplification of the pyroelectric IR sensor. The case of low frequency region shows that the voltage response increases with the independence of the sensor area as the thickness decreases. In the high frequency region, it is found that the voltage response with the load resistor of 20$G{\Omega}$ increases with the independence of the sensor thickness as the sensor area decreases. In the low frequency region, the detectivity becomes excellent at th load resistor of 20$G{\Omega}$, the sensor area larger than $4{\times}10^{-10}m^2$ and the sensor thickness thinner than $1{\times}10^{-5}m$, while, in the high frequency region, it shows high value at the sensor thickness thinner than $1{\times}10^{-5}m$ and the sensor area smaller than $2{\times}10^{-10}m^2$ with the independence of the load resistor. In the circuit design, quasi-boot-strap circuit is employed, in which a single op-amp is connected to the drain of JFFT. Desirable frequency band width, amplification rate and the remarkable drop of noise of about 56% from that of conventional circuits with double op-amps are obtained.

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Design of a Highly Linear Broadband Active Antenna Using a Multi-Stage Amplifier (다중 증폭 회로를 이용한 높은 선형 특성을 갖는 광대역 능동 안테나 설계)

  • Lee, Cheol-Soo;Jung, Geoun-Seok;Pack, Jeong-Ki
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.11
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    • pp.1193-1203
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    • 2008
  • An active antenna(AA) can have wider bandwidth and more gain with small antenna size than those of passive antennas. However, AA inherently generates thermal noise and spurious signals from an active device. Moreover, the spurious performance of AA is very important in a highly sensitive receiving system since it is located at the front end of the receiving system. In this study, we developed an AA with $100{\sim}500\;MHz$, having the output P1dB higher than 3 dBm and little spurious signals in real environments. To achieve such performance, we designed an AA with 3-stage amplifier using CD(common drain) FET and 2 BJTs. Its electrical performances were simulated using ADS. The measurement results for typical gain, NF, OIP3, VSWR and P1dB in the required frequency band were 9.7 dBi, 10 dB, 14 dBm, 1.7:1 and 3 dBm respectively. They are in good agreement with simulation results. The unwanted spectrum level of the proposed AA is $10{\sim}30\;dB$ lower than that of the antenna with CS(common source) FET configuration at a west suburban area of Seoul, which shows that the proposed AA can be applicable to a highly sensitive receiving system for detecting unknown weak signals mixed with broadcasting and civilian communication signals.