• 한국통신학회논문지
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• 제24권10A호
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• pp.1579-1587
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• 1999

게이트 길이가 $0.2\mu\textrm{m}$인 P-HEMT에 대하여 드레인 바이어스 전류의 변화 및 게이트 폭에 대해 스케일링이 가능한 잡음모델을 제안하였다. 본 논문에서는 S-파라미터를 정확히 예측하기 위하여 $\tau$를 제외한 intrinsic 파라미터는 offset를 도입하여 정규화 한 후 스케일링을 하였다. 드레인 포화전류에 대한 드레인 전류의 비율과 게이트 폭을 변수로 하는 소신호 모델 파라미터의 맞춤함수를 구하였다. 또한, 잡음 파라미터를 정확히 예측하기 위하여 진성저항 잡음 온도 $\textrm{T}_{g}$, 게이트 단 전류 잡음원 등가잡음 컨덕턴스 $\textrm{G}_{ni}$, 드레인 단 전류와 게이트 폭에 거의 관계없으며 이의 평균값은 주변온도와 유사한 값으로 $\textrm{G}_{ni}$는 회로 특성에 영향을 미치지 않을 정도로 작은 값으로 추출되었다. 그러므로, $\textrm{G}_{no}$만을 잡음 모델정수로 하는 잡음모델과 $\textrm{T}_{g}$, $\textrm{G}_{ni}$, $\textrm{G}_{no}$를 잡음 모델정수로 하는 잡음모델을 측정값과 비교하여 본 결과 Gno만을 갖는 잡음모델도 측정된 잡음 파라미터와 잘 일치하였다. 따라서, 모델 정수추출이 간단한 $\textrm{G}_{no}$만을 갖는 잡음모델은 게이트 폭과 바이어스 전류에 대해 스케일링이 가능한 실용적인 잡음모델임을 확인하였다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1459-1462
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• 2005

The paper deals with the structural vibration and noise characteristics of pipe structures. In general, A structure bone noise has a great effect on the drain noise of toilets, and depends on the natural frequency of the related structures. In order to measure and to find the relationships between structural vibration and noise of the pipe structures, some experiments have been performed. Through the experiments, impact acceleration signal in time domain and magnitude of transfer function in the frequency domain have been investigated for three kinds of pipes. Transmission loss of pipes depending on the frequency ranges was also found by using small speakers as a sound source.

• KIEAE Journal
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• 제1권2호
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• pp.13-19
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• 2001

Recently, With the increase of income level, many people desire to have agreeable and quiet surrounding. However, the extent and time of the exposure to construction noise and vibration is increasing, which is a factor that ruins the quietness of the surrounding and increasingly raises interests in its effects. In this point, this study attempts to survey the characteristics of construction vibration by SD(Sand drain) method in construction field. In addition, the result of study is presumed to be usable as the fundamental materials for an efficient counter-plan in case of the public resentment in relations to the construction vibration occurring henceforth.

• KIEAE Journal
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• 제4권3호
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• pp.37-44
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• 2004

In this study, foreign and domestic noise criteria on walls, floors, and water supply facilities were reviewed and the results are as follows : regulation can be divided two things, one is on thickness the other is sound insulation performance. Green Building regulation based on the law and this have sound classification systems. Since these regulations are not established in Korea. The noise regulation on water supply-drain facilities and domestic guideline on interior noise level is needed. Foreign regulations are stricter than those of ours. And those has sound classification system for the better acoustic condition of inhabitants'.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2014년도 추계학술대회 논문집
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• pp.644-645
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• 2014

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권2호
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• pp.185-190
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• 2016

A 70-${\AA}$ nanowire field-effect transistor (FET) for sub-10-nm CMOS technology is designed and simulated in order to investigate the impact of an oxide trap on random telegraph noise (RTN) in the device. It is observed that the drain current fluctuation (${\Delta}I_D/I_D$) increases up to a maximum of 78 % due to the single electron trapping. In addition, the effect of various trap positions on the RTN in the nanowire FET is thoroughly analyzed at various drain and gate voltages. As the drain voltage increases, the peak point for the ${\Delta}I_D/I_D$ shifts toward the source side. The distortion in the electron carrier density and the conduction band energy when the trap is filled with an electron at various positions in the device supports these results.

• 한국전기전자재료학회논문지
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• 제19권1호
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• pp.1-6
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• 2006

High performance $Si_{0.8}Ge_{0.2}$ heterostructure metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated using well-controlled delta-doping of boron and $Si_{0.8}Ge_{0.2}$/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe pMOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^{-1}$ However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}_10^{-2}$ in comparison with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.5-6
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• 2005

High performance SiGe heterostructure metal-oxide-semiconductor field effect transistors(MOSFETs) were fabricated using well-controlled delta-doping of boron and SiGe/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe MOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^1$. However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}\sim10^{-2}$ in comparion with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.

• 한국소음진동공학회논문집
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• 제19권6호
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• pp.634-640
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• 2009

Helmholtz resonator has been used, especially in intake and exhaust systems of vehicles, due to its good noise reduction characteristics at low frequencies. Many approaches have been developed to predict the acoustic behavior of the resonator with the assumption that there is no leakage from the resonator. However, its behavior may be affected by leakage which may exist in manufacturing processes or on purpose. This study investigates the effect of leakage on the noise reduction characteristics of Helmholtz resonator with two practical examples. One is a resonator with a gap between baffle and housing of the resonator and the other one is a resonator with two drain holes on the baffle. The measured transmission loss shows that the resonance frequencies are considerably shifted to higher frequency due to the leakage. The Boundary Element Method was applied to predict the transmission loss of the Helmholtz resonator with drain holes. The comparison between the measured and predicted transmission loss shows that the acoustic impedance of the holes is essential for accurate predictions of the transmission loss.

• 한국전자파학회논문지
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• 제20권9호
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• pp.900-905
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• 2009

본 논문에서는 전류 블리딩(bleeding)과 입력 인덕티브 직렬-피킹을 이용한 공통 드레인 귀환(Common Drain Feedback: CDFB) CMOS 광대역 저잡음 증폭기(Low Noise Amplifier: LNA)를 설계하였다. 캐스코드 증폭기와 귀환 증폭기를 DC 결합하여 블리딩 전류의 조정을 통해 LNA의 이득과 잡음 지수(Noise figure: NF)의 동적 제어를 실현하였다. 제작한 LNA는 2.5 GHz의 대역폭에서, 고이득 영역은 $1.7{\sim}2.8\;dB$ NF와 17.5 dB 이득, 그리고 27 mW의 전력 소비를 보이고, 저 이득 영역은 $2.7{\sim}4.0\;dB$ NF와 14 dB 이득, 그리고 1.8 mW의 전력 소비를 보인다.