• Title/Summary/Keyword: 65nm CMOS

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Design of Crypto-processor for Internet-of-Things Applications (사물인터넷 응용을 위한 암호화 프로세서의 설계)

  • Ahn, Jae-uk;Choi, Jae-Hyuk;Ha, Ji-Ung;Jung, Yongchul;Jung, Yunho
    • Journal of Advanced Navigation Technology
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    • v.23 no.2
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    • pp.207-213
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    • 2019
  • Recently, the importance for internet of things (IoT) security has increased enormously and hardware-based compact chips are needed in IoT communication industries. In this paper, we propose low-complexity crypto-processor that unifies advanced encryption standard (AES), academy, research, institute, agency (ARIA), and CLEFIA protocols into one combined design. In the proposed crypto-processor, encryption and decryption processes are shared, and 128-bit round key generation process is combined. Moreover, the shared design has been minimized to be adapted in generic IoT devices and systems including lightweight IoT devices. The proposed crypto-processor was implemented in Verilog hardware description language (HDL) and synthesized to gate level circuit in 65nm CMOS process, which results in 11,080 gate counts. This demonstrates roughly 42% better than the aggregates of three algorithm implementations in the aspect of gate counts.

Montgomery Multiplier Supporting Dual-Field Modular Multiplication (듀얼 필드 모듈러 곱셈을 지원하는 몽고메리 곱셈기)

  • Kim, Dong-Seong;Shin, Kyung-Wook
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.24 no.6
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    • pp.736-743
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    • 2020
  • Modular multiplication is one of the most important arithmetic operations in public-key cryptography such as elliptic curve cryptography (ECC) and RSA, and the performance of modular multiplier is a key factor influencing the performance of public-key cryptographic hardware. An efficient hardware implementation of word-based Montgomery modular multiplication algorithm is described in this paper. Our modular multiplier was designed to support eleven field sizes for prime field GF(p) and binary field GF(2k) as defined by SEC2 standard for ECC, making it suitable for lightweight hardware implementations of ECC processors. The proposed architecture employs pipeline scheme between the partial product generation and addition operation and the modular reduction operation to reduce the clock cycles required to compute modular multiplication by 50%. The hardware operation of our modular multiplier was demonstrated by FPGA verification. When synthesized with a 65-nm CMOS cell library, it was realized with 33,635 gate equivalents, and the maximum operating clock frequency was estimated at 147 MHz.

A Security SoC supporting ECC based Public-Key Security Protocols (ECC 기반의 공개키 보안 프로토콜을 지원하는 보안 SoC)

  • Kim, Dong-Seong;Shin, Kyung-Wook
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.24 no.11
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    • pp.1470-1476
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    • 2020
  • This paper describes a design of a lightweight security system-on-chip (SoC) suitable for the implementation of security protocols for IoT and mobile devices. The security SoC using Cortex-M0 as a CPU integrates hardware crypto engines including an elliptic curve cryptography (ECC) core, a SHA3 hash core, an ARIA-AES block cipher core and a true random number generator (TRNG) core. The ECC core was designed to support twenty elliptic curves over both prime field and binary field defined in the SEC2, and was based on a word-based Montgomery multiplier in which the partial product generations/additions and modular reductions are processed in a sub-pipelining manner. The H/W-S/W co-operation for elliptic curve digital signature algorithm (EC-DSA) protocol was demonstrated by implementing the security SoC on a Cyclone-5 FPGA device. The security SoC, synthesized with a 65-nm CMOS cell library, occupies 193,312 gate equivalents (GEs) and 84 kbytes of RAM.

Design of In-Memory Computing Adder Using Low-Power 8+T SRAM (저 전력 8+T SRAM을 이용한 인 메모리 컴퓨팅 가산기 설계)

  • Chang-Ki Hong;Jeong-Beom Kim
    • The Journal of the Korea institute of electronic communication sciences
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    • v.18 no.2
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    • pp.291-298
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    • 2023
  • SRAM-based in-memory computing is one of the technologies to solve the bottleneck of von Neumann architecture. In order to achieve SRAM-based in-memory computing, it is essential to design efficient SRAM bit-cell. In this paper, we propose a low-power differential sensing 8+T SRAM bit-cell which reduces power consumption and improves circuit performance. The proposed 8+T SRAM bit-cell is applied to ripple carry adder which performs SRAM read and bitwise operations simultaneously and executes each logic operation in parallel. Compared to the previous work, the designed 8+T SRAM-based ripple carry adder is reduced power consumption by 11.53%, but increased propagation delay time by 6.36%. Also, this adder is reduced power-delay-product (PDP) by 5.90% and increased energy-delay- product (EDP) by 0.08%. The proposed circuit was designed using TSMC 65nm CMOS process, and its feasibility was verified through SPECTRE simulation.

Design of a High-Performance Match-Line Sense Amplifier for Selective Match-Line charging Technique (선택적 매치라인 충전기법에 사용되는 고성능 매치라인 감지 증폭기 설계)

  • Ji-Hoon Choi;Jeong-Beom Kim
    • The Journal of the Korea institute of electronic communication sciences
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    • v.18 no.5
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    • pp.769-776
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    • 2023
  • In this paper, we designed an MLSA(Match-line Sense Amplifier) for low-power CAM(Content Addressable Memory). By using the MLSA and precharge controller, we reduced power consumption during CAM operation by employing a selective match-line charging technique to mitigate power consumption caused by mismatch. Additionally, we further reduced power consumption due to leakage current by terminating precharge early when a mismatch occurs during the search operation. The designed circuit exhibited superior performance compared to the existing circuits, with a reduction of 6.92% and 23.30% in power consumption and propagation delay time, respectively. Moreover, it demonstrated a significant decrease of 29.92% and 52.31% in product-delay-product (PDP) and energy-delay-product (EDP). The proposed circuit was validated using SPECTRE simulation with TSMC 65nm CMOS process.

Design of High-Speed Sense Amplifier for In-Memory Computing (인 메모리 컴퓨팅을 위한 고속 감지 증폭기 설계)

  • Na-Hyun Kim;Jeong-Beom Kim
    • The Journal of the Korea institute of electronic communication sciences
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    • v.18 no.5
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    • pp.777-784
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    • 2023
  • A sense amplifier is an essential peripheral circuit for designing a memory and is used to sense a small differential input signal and amplify it into digital signal. In this paper, a high-speed sense amplifier applicable to in-memory computing circuits is proposed. The proposed circuit reduces sense delay time through transistor Mtail that provides an additional discharge path and improves the circuit performance of the sense amplifier by applying m-GDI (: modified Gate Diffusion Input). Compared with previous structure, the sense delay time was reduced by 16.82%, the PDP(: Power Delay Product) by 17.23%, the EDP(: Energy Delay Product) by 31.1%. The proposed circuit was implemented using TSMC's 65nm CMOS process, while its feasibility was verified through SPECTRE simulation in this study.

X-band CMOS VCO for 5 GHz Wireless LAN

  • kim, Insik;Ryu, Seonghan
    • International journal of advanced smart convergence
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    • v.9 no.1
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    • pp.172-176
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    • 2020
  • The implementation of a low phase noise voltage controlled oscillator (VCO) is important for the signal integrity of wireless communication terminal. A low phase noise wideband VCO for a wireless local area network (WLAN) application is presented in this paper. A 6-bit coarse tune capacitor bank (capbank) and a fine tune varactor are used in the VCO to cover the target band. The simulated oscillation frequency tuning range is from 8.6 to 11.6 GHz. The proposed VCO is desgned using 65 nm CMOS technology with a high quality (Q) factor bondwire inductor. The VCO is biased with 1.8 V VDD and shows 9.7 mA current consumption. The VCO exhibits a phase noise of -122.77 and -111.14 dBc/Hz at 1 MHz offset from 8.6 and 11.6 GHz carrier frequency, respectively. The calculated figure of merit(FOM) is -189 dBC/Hz at 1 MHz offset from 8.6 GHz carrier. The simulated results show that the proposed VCO performance satisfies the required specification of WLAN standard.

CMOS 120 GHz Phase-Locked Loops Based on Two Different VCO Topologies

  • Yoo, Junghwan;Rieh, Jae-Sung
    • Journal of electromagnetic engineering and science
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    • v.17 no.2
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    • pp.98-104
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    • 2017
  • This work describes the development and comparison of two phase-locked loops (PLLs) based on a 65-nm CMOS technology. The PLLs incorporate two different topologies for the output voltage-controlled oscillator (VCO): LC cross-coupled and differential Colpitts. The measured locking ranges of the LC cross-coupled VCO-based phase-locked loop (PLL1) and the Colpitts VCO-based phase-locked loop (PLL2) are 119.84-122.61 GHz and 126.53-129.29 GHz, respectively. Th e output powers of PLL1 and PLL2 are -8.6 dBm and -10.5 dBm with DC power consumptions of 127.3 mW and 142.8 mW, respectively. Th e measured phase noise of PLL1 is -59.2 at 10 kHz offset and -104.5 at 10 MHz offset, and the phase noise of PLL2 is -60.9 dBc/Hz at 10 kHz offset and -104.4 dBc/Hz at 10 MHz offset. The chip sizes are $1,080{\mu}m{\times}760{\mu}m$ (PLL1) and $1,100{\mu}m{\times}800{\mu}m$ (PLL2), including the probing pads.

Design of 24-GHz 1Tx 2Rx FMCW Transceiver (24 GHz 1Tx 2Rx FMCW 송수신기 설계)

  • Kim, Tae-Hyun;Kwon, Oh-Yun;Kim, Jun-Seong;Park, Jae-Hyun;Kim, Byung-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.29 no.10
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    • pp.758-765
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    • 2018
  • This paper presents a 24-GHz frequency-modulated continuous wave(FMCW) radar transceiver with two Rx and one Tx channels in 65-nm complementary metal-oxide-semiconductor(CMOS) process and implemented it on a radar system using the developed transceiver chip. The transceiver chip includes a $14{\times}$ frequency multiplier, low-noise amplifier, down-conversion mixer, and power amplifier(PA). The transmitter achieves >10 dBm output power from 23.8 to 24.36 GHz and the phase noise is -97.3 GHz/Hz at a 1-MHz offset. The receiver achieves 25.2 dB conversion gain and output $P_{1dB}$ of -31.7 dBm. The transceiver consumes 295 mW of power and occupies an area of $1.63{\times}1.6mm^2$. The radar system is fabricated on a low-loss Duroid printed circuit board(PCB) stacked on the low-cost FR4 PCBs. The chip and antenna are placed on the Duroid PCB with interconnects and bias, gain blocks and FMCW signal-generating circuitry are mounted on the FR4 PCB. The transmit antenna is a $4{\times}4$ patch array with 14.76 dBi gain and receiving antennas are two $4{\times}2$ patch antennas with a gain of 11.77 dBi. The operation of the radar is evaluated and confirmed by detecting the range and azimuthal angle of the corner reflectors.

High-Performance Multiplier Using Modified m-GDI(: modified Gate-Diffusion Input) Compressor (m-GDI 압축 회로를 이용한 고성능 곱셈기)

  • Si-Eun Lee;Jeong-Beom Kim
    • The Journal of the Korea institute of electronic communication sciences
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    • v.18 no.2
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    • pp.285-290
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    • 2023
  • Compressors are widely used in high-speed electronic systems and are used to reduce the number of operands in multiplier. The proposed compressor is constructed based on the m-GDI(: modified gate diffusion input) to reduce the propagation delay time. This paper is compared the performance of compressors by applying 4-2, 5-2 and 6-2 m-GDI compressors to the multiplier, respectively. As a simulation results, compared to the 8-bit Dadda multiplier using the 4-2 and 6-2 compressor, the multiplier using the 5-2 compressor is reduced propagation delay time 13.99% and 16.26%, respectively. Also, the multiplier using the 5-2 compressor is reduced PDP(: Power Delay Product) 4.99%, 28.95% compared to 4-2 and 6-2 compressor, respectively. However, the multiplier using the 5-2 compression circuit is increased power consumption by 10.46% compared to the multiplier using the 4-2 compression circuit. In conclusion, the 8-bit Dadda multiplier using the 5-2 compressor is superior to the multipliers using the 4-2 and 6-2 compressors. The proposed circuit is implemented using TSMC 65nm CMOS process and its feasibility is verified through SPECTRE simulation.