• Korean Journal of Optics and Photonics
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• v.6 no.2
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• pp.156-164
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• 1995

Based on the scalar wave equation of optical fibers, the dispersion characteristics of arbitrarily profiled fibers were analyzed. We used the I-D FEM employing quadratic interpolation fucntions to solve the scalar wave equation. We simulated the DC optical fibers as objects, and searched for the refractive index distribution to minimize the total dispersion. In DC fibers, we found the design parameters for which the total dispersion was almost zero at $\lambda=1.3{\mu}m and 1.55{\mu}m$ simultaneously. We also found the design parameters where the dispersion was flattened, less than 1.0 ps/km.nm for$\lambda=1.4~1.7{\mu}m$1. and the dispersion was as low as 0.65 ps/km.nm at $\lambda=1.55{\mu}m$..

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.10a
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• pp.578-580
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• 2017

IoT technology poses a lot of security threats. Various algorithms are thus employed in ensuring security of transactions between IoT devices. Advanced Encryption Standard (AES) has gained huge popularity among many other symmetric key algorithms due to its robustness till date. This paper presents a hardware based implementation of the AES algorithm. We present a four-stage pipelined architecture of the encryption and key generation. This method allowed a total plain text size of 512 bits to be encrypted in 46 cycles. The proposed hardware design achieved a maximum frequency of 1.18GHz yielding a throughput of 13Gbps and 800MHz yielding a throughput of 8.9Gbps on the 65nm and 180nm processes respectively.

• Journal of the Korea Convergence Society
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• v.8 no.5
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• pp.161-167
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• 2017

We have fabricated and characterized $32{\times}32$ photonic quantum ring (PQR) laser arrays uniformly operable with $0.98{\mu}A$ per ring at room temperature. The typical threshold current, threshold current density, and threshold voltage are 20 mA, $0.068A/cm^2$, and 1.38 V. The top surface emitting PQR array contains GaAs multiquantum well active regions and exhibits uniform characteristics for a chip of $1.65{\times}1.65mm^2$. The peak power wavelength is $858.8{\pm}0.35nm$, the relative intensity is $0.3{\pm}0.2$, and the linewidth is $0.2{\pm}0.07nm$. We also report the wavelength division multiplexing system experiment using angle-dependent blue shift characteristics of this laser array. This photonic quantum ring laser has angle-dependent multiple-wavelength radial emission characteristics over about 10 nm tuning range generated from array devices. The array exhibits a free space detection as far as 6 m with a function of the distance.

• Journal of Environmental Science International
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• v.26 no.1
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• pp.67-78
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• 2017

Combustion of ethanol (EtOH) at low temperatures has been studied using titania- and silica-supported platinum nanocrystallites with different sizes in a wide range of 1~25 nm, to see if EtOH can be used as a clean, alternative fuel, i.e., one that does not emit sulfur oxides, fine particulates and nitrogen oxides, and if the combustion flue gas can be used for directly heating the interior of greenhouses. The results of $H_2-N_2O$ titration on the supported Pt catalysts with no calcination indicate a metal dispersion of $0.97{\pm}0.1$, corresponding to ca. 1.2 nm, while the calcination of 0.65% $Pt/SiO_2$ at 600 and $900^{\circ}C$ gives the respective sizes of 13.7 and 24.6 nm when using X-ray diffraction technique, as expected. A comparison of EtOH combustion using $Pt/TiO_2$ and $Pt/SiO_2$ catalysts with the same metal content, dispersion and nanoparticle size discloses that the former is better at all temperatures up to $200^{\circ}C$, suggesting that some acid sites can play a role for the combustion. There is a noticeable difference in the combustion characteristics of EtOH at $80{\sim}200^{\circ}C$ between samples of 0.65% $Pt/SiO_2$ consisting of different metal particle sizes; the catalyst with larger platinum nanoparticles shows higher intrinsic activity. Besides the formation of $CO_2$, low-temperature combustion of EtOH can lead to many other pathways that generate undesired byproducts, such as formaldehyde, acetaldehyde, acetic acid, diethyl ether, and ethylene, depending strongly on the catalyst and reaction conditions. A 0.65% $Pt/SiO_2$ catalyst with a Pt crystallite size of 24.6 nm shows stable performances in EtOH combustion at $120^{\circ}C$ even for 12 h, regardless of the space velocity allowed.

• Korean Journal of Optics and Photonics
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• v.17 no.3
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• pp.273-277
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• 2006

In this paper, we constructed the Littman type and fixed Littrow type tunable external-cavity diode laser systems. The laser output, which is the 0th-order diffracted beam from the diffraction grating in an external cavity, was the single longitudinal mode. Its FWHM was measured as less than 9MHz. With the diode driving current of 140mA and operating temperature of $25^{\circ}C$, the coarse tuning range of 5.375nm was measured for the Littman type, and of 13.65nm was measured for the fixed Littrow type. A fine tuning experiment in which an external mirror was rotated by a PZT driven by a sawtooth wave was performed, and its tuning range of 0.042nm was measured for both types. The fixed Littrow type tunable external-cavity diode laser system was an improvement on the conventional Littrow type tunable laser system in which the output direction varies due to the grating embedded in the mirror plate.

• Journal of the Korea Institute of Building Construction
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• v.23 no.2
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• pp.113-121
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• 2023

In this study, the applicability and reproducibility of laser induced breakdown spectroscopy(LIBS) for heavy metal analysis in clinker and 5 types of by-products(crushed stone sludge, blast furnace slag, steel slag, waste concrete sludge, bottom ash) were experimentally reviewed. As a result of ICP-MS, XRF, and LIBS analysis of the six samples, the difference between ICP and XRF was confirmed in the quantitative analysis, but the LIBS analysis showed a difference by element from the standard analysis, and only qualitative analysis of the sample was possible. LIBS analysis wavelength was set for three types of heavy metals(Cd - 214.44nm, Pb - 405.78nm, Hg - 253.65nm). As a result of laser irradiation on the surface of the membrane impregnated with a solution of each concentration(1~1000ppm) and dried, the correlation between the spectral intensity and the concentration was confirmed.

• Korean Journal of Materials Research
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• v.8 no.8
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• pp.737-743
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• 1998

The synthesis of $SrAI_2O_4:Eu^{2+}$ phosphor and its properties of both photoluminescence and long-phosphorescent were investigated as a function of sintering condition. Single phase of $SrAl_2O_4$ was obtained by sintering the mixtures of $SrCO_3$, $Eu_2O_3$, $AI_2O_34 and 3wt% $B_2O_3$ powders over 100$0^{\circ}C$ in Ar/H2 atmosphere. The optimum sintering condition for the long-phosphorescent phosphor of $SrAI_2O_4:Eu^{2+}$ was found at 130$0^{\circ}C$ for 3hours. The PL emission spectrum of $SrAI_2O_4:Eu^{2+}$ shows a maximum peak intensity at 520nm(2.384eV) with a broad emission extending from 450 to 650nm which resulted from the $4f^65d^1$$\rightarrow$$4f^7$ transition of $Eu^{+2}$ under 360nm exitation. Monitored at 520nm. the excita¬tion spectrum of $SrAI_2O_4:Eu^{2+}$ exhibits a maximum peak intensity at 360nm (3.44eV) with a broad absorption band extending from 250 to 480nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.345-346
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• 2008

We have studied an emission spectra of top-emssion organic light-emitting diodes(TEOLED) due to a change of cathode and organic layer thickness. Device structure is Al(100nm)/TPD(xnm)/$Alq_3$(ynm)/LiF(0.5nm)/cathode. And two different types of cathode were used; one is LiF(0.5nm)/Al(25nm) and the other is LiF(0.5nm)/Al(2nm)/Ag(30nm). While a thickness of hole-transport layer of TPD was varied from 35 to 65nm, an emissive layer thickness of $Alq_3$ was varied from 50 to 100nm for two devices. A ratio of those two layer was kept to be about 2:3. Al and Al/Ag double layer cathode devices show that the emission spectra were changed from 490nm to 560nm and from 490nm to 560nm, respectively, when the total organic layer increase. Full width at half maximum was changed from 67nm to 49nm and from 90nm to 35nm as the organic layer thickness increases. All devices show that view angle dependent emission spectra show a blue shift. Blue shift is strong when the organic layer thickness is more than 140nm. Devece with Al/Ag double layer cathode is more vivid.

• Transactions on Electrical and Electronic Materials
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• v.10 no.1
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• pp.28-30
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• 2009

We have studied organic layer-thickness dependent electrical and optical properties of bottom- and top-emission devices. Bottom-emission device was made in a structure of ITO(170 nm)/TPD(x nm)/$Alq_3$(y nm)/LiF(0.5 nm)/Al(100 nm), and a top-emission device in a structure of glass/Al(100 nm)/TPD(x nm)/$Alq_3$(y nm)/LiF(0.5 nm)/Al(25 nm). A hole-transport layer of TPD (N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine) was thermally deposited in a range of 35 nm and 65 nm, and an emissive layer of $Alq_3$ (tris-(8-hydroxyquinoline) aluminum) was successively deposited in a range of 50 nm and 100 nm. Thickness ratio between the hole-transport layer and the emissive layer was maintained to be 2:3, and a whole layer thickness was made to be in a range of 85 and 165 nm. From the current density-luminance-voltage characteristics of the bottom-emission devices, a proper thickness of the organic layer (55 nm thick TPD and 85 nm thick $Alq_3$ layer) was able to be determined. From the view-angle dependent emission spectrum of the bottom-emission device, the peak wavelength of the spectrum does not shift as the view angle increases. However, for the top-emission device, there is a blue shift in peak wavelength as the view angle increases when the total layer thickness is thicker than 140 nm. This blue shift is thought to be due to a microcavity effect in organic light-emitting diodes.

• Applied Microscopy
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• v.25 no.2
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• pp.65-72
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• 1995

The interfacial structures of ZnSe/GaAs which were grown by single chamber MBE at $300^{\circ}C$ were investigated by high resolution transmission electron microscope working at 300 kV with resolution of 0.18 nm. The interfaces of ZnSe/GaAs whose thickness is 2,700 nm are wavy and extensive stacking faults were formed in ZnSe epilayer but the interfaces maintained the coherency with the substrate GaAs. The stacking faults are formed in {111} planes and their sizes are $10{\sim}20nm$ in length and two or three atomic layer in width with the density of $10^9/cm^2$. Micortwins and moire fringes are also observed. However. in 10 nm ZnSe epilayer, the interfaces are pseudomorphic and only moire fringes are observed in local areas. The cylindrical defects which are perpendicular to the interface with $50{\sim}60nm$ in length, were observed with the interval of 50 nm at ZnSe/GaAs interfaces in 2,700nm epilayer. The origin and character of these defects are unknown, however, they played a role of producing the structural defects at the interfaces.