• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.4
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• pp.281-286
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• 2007

In this paper, sub-circuits for 24 GHz phase locked 100ps(PLLs) using $0.5{\mu}m$ SiGe HBT are presented. They are 24 Ghz voltage controlled oscillator(VCO), 24 GHz to 12 GHz regenerative frequency divider(RFD) and 12 GHz to 1.5 GHz static frequency divider. $0.5{\mu}m$ SiGe HBT technology, which offers transistors with 90 GHz fMAX and 3 aluminum metal layers, is employed. The 24 GHz VCO employed series feedback topology for high frequency operation and showed -1.8 to -3.8 dBm output power within tuning range from 23.2 GHz to 26 GHz. The 24 GHz to 12 GHz RFD, based on Gilbert cell mixer, showed 1.2 GHz bandwidth around 24 GHz under 2 dBm input and consumes 44 mA from 3 V power supply including I/O buffers for measurement. ECL based static divider operated up to 12.5 GHz while generating divide by 8 output frequency. The static divider drains 22 mA from 3 V power supply.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.36 no.12C
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• pp.759-763
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• 2011

In this paper, a dual-band T-shaped microstrip monopole antenna with a pair of slits for 2.4/5.2/5.8-GHz wireless local area networks (WLANs) is proposed. A pair of T-shaped slits is loaded on a T-shaped monopole antenna fed by microstrip line in order to obtain dual-band operation as well as to reduce the antenna size. It is demonstrated from experimental results that the proposed antenna can cover all the required bands for WLAN. The measured impedance bandwidth for VSWR<2 is about 5.7% (2.37-2.51GHz) in the lower frequency band and about 28.8% (4.76-6.35GHz) in the higher frequency band. The measured peak gains are about 1.33 dBi to 1.66 dBi in the 2.4GHz band, 3.50 dBi to 3.95 dBi in the 5.25GHz band, and 2.06 dBi to 2.34 dBi in the 5.8GHz band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.3
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• pp.401-408
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• 2001

This paper shows the design, fabrication and performance analysis of VCO which plays a major role in 5.8 GHz RF module for ITS. The design specifications of the VCO are determined on the basis of 5.8 GHz RF modul performance requirements. The design parameters are optimized through ADS simulation tool. The operating characteristic and performance analysis of the implemented VCO based on the design parameters are accomplished. The frequency variations according to the voltage change(0 ~5 V) of varactor diode are from 5.42 GHz to 5.518 GHz and the power level is 6.5 dBm. The second harmonic suppression are -21.5 dBc at 5.51 GHz and the phase noise characteristics are -83.81 dBc at 10 kHz offset frequency. The implemented VCO is available to not only DSRC and also, 5.8 GHz other systems.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.3
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• pp.1-6
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• 2008

A dual band I/Q modulator which converts baseband input signals to 2.4GHz or 5GHz RF output has been proposed. The dual band I/Q modulator for 2.4GHz and 5GHz wireless LAN applications consists of $90^{\circ}$ phase shifter and wideband mixer. The I/Q modulator showed 15dB conversion loss at 2.4GHz and 16dB conversion loss at 5GHz. The sideband suppression is about 15dBc at 2.4GHz and 16dBc at 5GHz. Measured data shows 8.5% EVM at 2.4GHz, and 10% EVM at 5GHz for QPSK with symbol rate of 11Mbps. A carrier rejection is about 40dBc at 2.4GHz/5GHz band, and the I/Q modulator satisfied the output wireless LAN spectrum mask with baseband input signal.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.1
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• pp.39-45
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• 2008

In this parer a branch type inverted-F structure antenna with dual-band is proposed. The proposed antenna has a size of about $70mm{\times}35mm{\times}0.8mm$ with a total mobile phone PCB for support and patch of about $12mm{\times}8mm{\times}0.8mm$. This antenna is designed to operate of frequency 2.45GHz and 5.8GHz, Bandwidth at each other frequency is satisfied $83MHz{\sim}100MHz$ in frequencies. Also, The designed and fabricated dual-band antenna for 2.45GHz, 5.8GHz have a gain between 2.0dBi and -1.0dBi at all bands.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.7
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• pp.807-815
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• 2019

In this paper, we design a power amplifier to support quad-band in wireless communication devices using RF CMOS 180-nm process. The proposed power amplifier consists of low-band 0.9, 1.8, and 2.4 GHz and high-band 5 GHz. We proposed a structure that can support each input matching network without using a switch. For maximum linear output power, the output matching network was designed for impedance conversion to the power matching point. The fabricated quad-band power amplifier was verified using modulation signals. The long-term evolution(LTE) 10 MHz modulated signal was used for 0.9 and 1.8 GHz, and the measured output power is 23.55 and 24.23 dBm, respectively. The LTE 20 MHz modulated signal was used for 1.8 GHz, and the measured output power is 22.24 dBm. The wireless local area network(WLAN) 802.11n modulated signal was used for 2.4 GHz and 5.0 GHz. We obtain maximum linear output power of 20.58 dBm at 2.4 GHz and 17.7 dBm at 5.0 GHz.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.739-741
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• 2014

We suggested the new compact dual band monopole antenna using two crossed planar monopole antenna. The proposed antenna will be used for the ISM dual band 2.45GHz/5.8GHz. It is necessary to verify its performance through the follow-up development of the proposed antenna for the high-speed wireless actual communications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.11
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• pp.1078-1091
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• 2011

In this paper, a triple band-notched UWB antennas using a spiral resonator and a complementary split ring resonator is proposed as two types. The band-rejection characteristic of the designed antenna is analyzed through the structure and equivalent circuit model of spiral resonator and CSRR. The measured results of first type antenna show that a VSWR less than 2 was satisfied with a resonant frequency in the range of 1.16~12 GHz and it can be obtained the band-stop performance at 3.3~3.85 GHz, 5.15~6.1 GHz, and 8.025~8.5 GHz. The measured results of second type antenna show that a VSWR less than 2 was satisfied with this antenna works from 1.79 to 12 GHz and it can be achieved the band-notched performance at 3.3~3.88 GHz, 5.12~5.94 GHz, and 8.025~8.51 GHz. Through the measured results, the designed antenna was satisfied UWB band except for triple notched bands.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.3
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• pp.1284-1287
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• 2012

In this study, we propose the structures of octagonal spiral planar inductors without underpass and via, and confirm the frequency characteristics. The structures of inductors have Si thickness of $300{\mu}m$, $SiO_2$ thickness of $7{\mu}m$. The width of Cu coils and the space between segments have $20{\mu}m$, respectively. The number of turns of coils have 3. The performance of spiral planar inductors was simulated to frequency characteristics for inductance, quality-factor, SRF(Self- Resonance Frequency) using HFSS. The octagonal spiral planar inductors have inductance of 2.5nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 18.9 at 5 GHz, SRF of 11.1 GHz. Otherwise, square spiral planar inductors have inductance of 2.8nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 18.9 at 4.9 GHz, SRF of 10.3 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.2
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• pp.148-153
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• 2011

In this paper, an inverse class E frequency multiplier has been designed to generate 5.8 GHz wireless LAN signal by multiplying 2.9 GHz input. The inverse class E frequency multiplier is operating with low inductance value and low peak drain voltage than the class E frequency multiplier. Measurement shows the output power of 21 dBm, the mutiplier gain of 6 dB, and the PAE(Power Added Efficiency) of 35 % with 15 dBm input power.