• Journal of Korean Society of Environmental Engineers
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• v.28 no.3
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• pp.308-315
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• 2006

Since sewage characteristics are the most important factors that can affect the biological reactions in wastewater treatment plants, a detailed understanding on the characteristics and on-line measurement techniques of the influent sewage would play an important role in determining the appropriate control strategies. In this study, samples were taken at two hour intervals during 51 days from $1^{st}$ October to $21^{st}$ November 2005 from the influent gate of sewage treatment plant. Then the characteristics of sewage were investigated. It was found that the daily values of flow rate and concentrations of sewage components showed a defined profile. The highest and lowest peak values were observed during $11:00{\sim}13:00$ hours and $05:00{\sim}07:00$ hours, respectively. Also, it was shown that the concentrations of sewage components were strongly correlated with the absorbance measured at 300 nm of UV. Therefore, the objective of the paper is to develop on-line estimation technique of the concentration of each component in the sewage using accumulated profiles of sewage, absorbance, and flow rate which can be measured in real time. As a first step, regression analysis was performed using the absorbance and component concentration data. Then a neural network trained with the input of influent flow rate, absorbance, and inflow duration was used. Both methods showed remarkable accuracy in predicting the resulting concentrations of the individual components of the sewage. In case of using the neural network, the predicted value md of the measurement were 19.3 and 14.4 for TSS, 26.7 and 25.1 for TCOD, 5.4 and 4.1 for TN, and for TP, 0.45 to 0.39, respectively.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.10 no.2
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• pp.168-175
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• 2017

In this paper, a 5V small-area NMOS-diode eFuse OTP memory cell is proposed. This cell which is used in PMICs consists of a 5V NMOS transistor and an eFuse link as a memory part, based on a BCD process. Also, a regulated voltage of V2V ($=2.0V{\pm}10%$) instead of the conventional VDD is used to the pull-up loads of a VREF circuit and a BL S/A circuit to obtain a wider operational voltage range of the eFuse memory cell. When this proposed cells are used in the simulation, their sensing resistances are found to be $15.9k{\Omega}$ and $32.9k{\Omega}$, in the normal read mode and in the program-verify-read mode, respectively. Furthermore, the read current flowing through a non-blown eFuse is restricted to $97.7{\mu}A$. Thus, the eFuse link of a non-blown eFuse OTP memory cell is kept non-blown. The layout area of the designed 1kb eFuse OTP memory IP based on Dongbu HiTek's BCD process is $168.39{\mu}m{\times}479.45{\mu}m(=0.08mm^2)$.

• Analytical Science and Technology
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• v.21 no.6
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• pp.518-525
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• 2008

Mandipropamid is a new mandelamide-type fungicide to control foliar Oomycete pathogens in some vegetables. An analytical method was developed to determine mandipropamid residues in agricultural commodities using high-performance liquid chromatography (HPLC) and liquid chromatography/mass spectrometry (LC/MS). Mandipropamid was extracted with methanol from grape, tomato, green pepper, Chinese cabbage and potato samples. The extract was diluted with saturated sodium chloride solution and distilled water, and dichloromethane partition was followed to recover the mandipropamid from the aqueous phase. Florisil column chromatography was employed to further remove interfering co-extractives prior to HPLC analysis. Reverse-phased HPLC was successfully applied to determine mandipropamid in sample extracts with the detection at its ${\lambda}_{max}$ (223 nm). Overall recoveries of mandipropamid from fortified samples averaged $99.8{\pm}1.7$ (n=6), $89.3{\pm}5.3$ (n=6), $98.7{\pm}2.2$ (n=6), $99.7{\pm}6.8$ (n=6) and $91.1{\pm}3.1$ (n=6) for grape, tomato, green pepper, Chinese cabbage and potato, respectively. Limit of quantification of the method was 0.02~0.04 mg/kg for all samples. A LC/mass spectrometry with selected-ion monitoring was also provided to confirm the suspected residue. The proposed method was reproducible and sensitive enough to determine the terminal residue of mandipropamid in agricultural commodities.

• Applied Biological Chemistry
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• v.46 no.3
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• pp.195-200
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• 2003

Methods of adding barley malt as source of carbohydrates and enzymes in the production of kanjang in order to improve it's tastes and qualities were investigated. Soybean meju, soybean-malt meju and soybean meju cummalt was mashed with 20% salt brine in the ratio of 1:3 respectively, matured and analyzed the chemical compositions of the soy sauce mash samples for 150 days of maturing. Organoleptic evaluations for the matured soy sauce samples were done. The higher total nitrogen, TCA soluble nitrogen, O.D. at 500 nm, pure extract and lactic acid content could be observed with the soy sauce mash made of soybean-malt meju than those of contrast one from the beginning of the mashing throughout to the whole maturing period of 150 days. The higher the content of malt in the soybean-malt meju, the higher those content in the mash. But the lower content of those compositions in the soy sauce mash made of soybean meju cum malt than those in the contrast was found. The highest scores in all the sensory characteristics including 7.56 points, which were significantly different from that of contrast soy sauce at 5% level, in overall palatability were obtained by the soy sauce made of soybean-malt meju added with 30% malt in the organoleptic evaluations.

• Journal of Microbiology and Biotechnology
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• v.22 no.12
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• pp.1782-1789
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• 2012

We have developed a novel type of polymer nanogel loaded with anticancer drug based on bio-derived poly(${\gamma}$-glutamic acid) (${\gamma}$-PGA). ${\gamma}$-PGA is a highly anionic polymer that is synthesized naturally by microbial species, most prominently in various bacilli, and has been shown to have excellent biocompatibility. Thiolated ${\gamma}$-PGA was synthesized by covalent coupling between the carboxyl groups of ${\gamma}$-PGA and the primary amine group of cysteamine. Doxorubicin (Dox)-loaded ${\gamma}$-PGA nanogels were fabricated using the following steps: (1) an ionic nanocomplex was formed between thiolated ${\gamma}$-PGA as the negative charge component, and Dox as the positive charge component; (2) addition of poly(ethylene glycol) (PEG) induced hydrogen-bond interactions between thiol groups of thiolated ${\gamma}$-PGA and hydroxyl groups of PEG, resulting in the nanocomplex; and (3) disulfide crosslinked ${\gamma}$-PGA nanogels were fabricated by ultrasonication. The average size and surface charge of Dox-loaded disulfide cross-linked ${\gamma}$-PGA nanogels in aqueous solution were $136.3{\pm}37.6$ nm and $-32.5{\pm}5.3$ mV, respectively. The loading amount of Dox was approximately 38.7 ${\mu}g$ per mg of ${\gamma}$-PGA nanogel. The Dox-loaded disulfide cross-linked ${\gamma}$-PGA nanogels showed controlled drug release behavior in the presence of reducing agents, glutathione (GSH) (1-10 mM). Through fluorescence microscopy and FACS, the cellular uptake of ${\gamma}$-PGA nanogels into breast cancer cells (MCF-7) was analyzed. The cytotoxic effect was evaluated using the MTT assay and was determined to be dependent on both the concentration and treatment time of ${\gamma}$-PGA nanogels. The bio-derived ${\gamma}$-PGA nanogels are expected to be a well-designed delivery carrier for controlled drug delivery applications.

• Korean Journal of Optics and Photonics
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• v.8 no.6
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• pp.445-449
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• 1997

The complex refractive indices of $Ge_2Se_2Te_5$ which show reversible phase change between the crystalline phase and an amorphous one depending upon the annealing process have been determined in the spectral range of 0.7-4.5 eV. The $Ge_2Se_2Te_5$ films were DC sputter deposited on the crystalline silicon substrate. The spectro-ellipsometry data of a thick film were analyzed following the modelling procedure where the quantum mechanical dispersion relation were used for the complex refractive indices of both the cryastalline phase $Ge_2Se_2Te_5$ and and amorphous phase $Ge_2Se_2Te_5$, respectively. On the other hand, with the surface micro-roughness layer whose effective thickness was determined from AFM analysis, the spectro-ellipsometry data were numerically inverted to yield the complex refractive index of $Ge_2Se_2Te_5$ at each wavelength. With these set of complex refractive indices, the reflectance spectra were calculated and those spectra obtained from the numerical inversion showed better agreement with the experimental reflection spectra for both the cryastalline phase and an amorphous phase. Finally, the thin $Ge_2Se_2Te_5$ film which has the optimum thickness of 26 nm as the medium for optical recording was also analyzed and the quantitative result of the film thickness and the surface microroughness has been reported.

• Journal of Korean Vacuum Science & Technology
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• v.5 no.1
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• pp.11-18
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• 2001

Dielectric passivation effects on the EM(electromigration) have been a great interest with recent ULSI and multilevel structure tends in thin film interconnections of a microelectronic device. SiO$_2$, PSG(phosphosilicate glass), and Si$_3$N$_4$ passivation materials effects on the EM resistance were investigated by utilizing widely used Al-1%Si thin film interconnections. A standard photolithography process was applied for the fabrication of 0.7㎛ thick 3㎛ wide, and 200㎛ ~1600㎛ long Al-1%Si EM test patterns. SiO$_2$, PSG, and Si$_3$N$_4$ dielectric passivation with the thickness of 300 nm were singly deposited onto the Al-1%Si thin film interconnections by using an APCVD(atmospheric pressure chemical vapor deposition) and a PECVD(plasma enhanced chemical vapor deposition) in order to investigate the passivation materials effects on the EM characteristics. EM tests were performed at the direct current densities of 3.2 $\times$ 10$\^$6/∼4.5 $\times$ 10$\^$6/ A/cm$^2$ and at the temperatures of 180 $\^{C}$, 210$\^{C}$, 240$\^{C}$, and 270$\^{C}$ for measuring the activation energies(Q) and for accelerated test conditions. Activation energies were calculated from the measured MTF(mean-time-to-failure) values. The calculated activation energies for the electromigration were 0.44 eV, 0.45 eV, and 0.50 eV, and 0.66 eV for the case of nonpassivated-, Si$_3$N$_4$passivated-, PSG passivated-, and SiO$_2$ passivated Al-1%Si thin film interconnections, respectively. Thus SiO$_2$ passivation showed the best characteristics on the EM resistance followed by the order of PSG, Si$_3$N$_4$ and nonpassivation. It is believed that the passivation sequences as well as the passivation materials also influence on the EM characteristics in multilevel passivation structures.

• Journal of Pharmaceutical Investigation
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• v.35 no.6
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• pp.461-465
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• 2005

A simple HPLC method with ultraviolet detection of nicardipine in human plasma was developed and validated. After drug extraction with solid phase extraction (SPE) method, chromatographic separation of nicardipine in plasma was achieved at $30^{\circ}C$ with a $C_{18}$ column and acetonitrile-0.02% phosphate buffer mixture (with 0.02% triethylamine, final pH 7.0), as mobile phase. Quantitative determination was performed by ultraviolet detection at 254 nm. The method was specific and validated with a limit of quantification of 5 ng/mL. The intra- and inter-day precision and accuracy were acceptable for all quality control samples including the lower limit of quantification. The applicability of the method was demonstrated by analysis of plasma after oral administration of a single 40 mg dose to 8 healthy subjects. From the plasma nicardipine concentration versus time curves, the mean $AUC_{t}$, was $134.04{\pm}59.72\;ng\;hr/mL$ and $C_{max}$ of $108.65{\pm}69.17\;ng/mL$ reached 1.5 hr after administration. The mean biological half-life of nicardipine was $3.93{\pm}0.82\;hr$. Based on the results, this simple and validated assay method could readily be used in any pharmacokinetic or bioequivalence studies using human.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.9
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• pp.546-551
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• 2016

$SrSnO_3:Tb^{3+}$ phosphor thin films were prepared on sapphire and quartz substrates in the growth temperature range of $100{\sim}400^{\circ}C$ by using the radio frequency magnetron sputtering deposition. The resulting $SrSnO_3:Tb^{3+}$ thin films were characterized by X-ray diffraction, scanning electron microscopy, ultraviolet-visible-infrared spectrophotometer, and photoluminescence spectrometer. The results indicated that the morphology, optical transmittance, band gap energy, and luminescence intensity of the phosphor thin films significantly depended on the growth temperature. All the thin films, regardless of the type of substrate, showed an amorphous behavior. As for the thin films deposited on sapphire substrate, the maximum crystallite size was obtained at a growth temperature of $400^{\circ}C$ and the strongest emission was green at 544 nm arising from the $^5D_4{\rightarrow}^7F_5$ transition of Tb3+. The average optical transmittance for all the thin films grown on sapphire and quartz substrates was decreased as the growth temperature increased from 100 to $400^{\circ}C$. The results suggest that the optimum growth temperatures for depositing highly-luminescent $SrSnO_3:Tb^{3+}$ phosphor thin films on sapphire and quartz substrates are 400 and $300^{\circ}C$, respectively.

• Journal of IKEEE
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• v.23 no.3
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• pp.917-924
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• 2019

This paper presents a wideband low noise amplifier (LNA) that is suitable for LTE-Advanced and 5G communication standards employing carrier aggregation (CA). The proposed LNA encompasses a common input stage and a dual output second stage with a buffer at each distinct output. This architecture is targeted to operate in both intra-band (contiguous and non-contiguous) and inter-band CA. In the proposed design, the input and second stages employ a gm enhancement with resistive feedback technique to achieve self-biasing, enhanced gain, wide bandwidth as well as reduced noise figure of the proposed LNA. An up/down power controller controls the single input single out (SISO) and single input multiple outputs (SIMO) modes of operation for inter-band and intra-band operations. The proposed LNA is designed with a 45nm CMOS technology. For SISO mode of operation, the LNA operates from 0.52GHz to 4.29GHz with a maximum power gain of 17.77dB, 2.88dB minimum noise figure and input (output) matching performance better than -10dB. For SIMO mode of operation, the proposed LNA operates from 0.52GHz to 4.44GHz with a maximum voltage gain of 18.30dB, a minimum noise figure of 2.82dB with equally good matching performance. An $IIP_3$ value of -6.7dBm is achieved in both SISO and SIMO operations. with a maximum current of 42mA consumed (LNA+buffer in SIMO operation) from a 1.2V supply.