• ETRI Journal
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• v.37 no.6
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• pp.1120-1128
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• 2015

We propose a pseudo optical N-level pulse-amplitude modulation (PO PAM-N) signal using a few externally-modulated lasers (EMLs) operating at different wavelengths, which is suitable for upgrading the transmission speed over an optical link of < 10 km single-mode fiber with low-cost components. To compare a PO PAM-N signal with that of a standard optical PAM-N signal, we perform experiments for evaluating the performance of a 51.56-Gb/s PO PAM-4 signal and standard 51.56-Gb/s optical PAM-4 signal. The receiver sensitivity (at $BER=10^{-5}$) of the PO PAM-4 signal is 1.5 dB better than the receiver sensitivity of a standard optical PAM-4 signal. We also investigate the feasibility of PO PAM-N (N = 4, 8, and 16) signals operating at 103.12 Gb/s, considering relative intensity noise, timing jitter, extinction ratio (ER) of EMLs, and dispersion. From the results, a PO PAM-8 signal performs better than PO PAM-4 and PO PAM-16 signals at 103.12 Gb/s. Finally, we suggest a timing control method to suppress the effect of dispersion in a PO PAM-N signal. We show that the tolerance to dispersion of a 103.12-Gb/s PO PAM-8 signal can be improved to ${\pm}40ps/nm$ by applying a proposed scheme.

• Electronics and Telecommunications Trends
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• v.30 no.1
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• pp.42-50
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• 2015

PON(Passive Optical Network)은 설치 및 유지보수가 편리하여 광가입자망으로 널리 사용되고 있다. 대표적인 PON 기술로 IEEE에서 표준화된 EPON(Ethernet PON), 10G EPON과 ITU-T에서 표준화된 GPON(Gigabit capable PON), XG-PON 기술이 있다. EPON 및 GPON은 각각 1G급 및 2.5G급 전송속도를 제공하며 한국, 일본, 중국 등 아시아와 북미 등에서 가입자 서비스 및 비즈니스 서비스용으로 사용되고 있다. 2010년대부터 10G급 PON 기술 사용이 증가되고 있으며, 앞으로 가파르게 증가하고 있는 가입자 트래픽량에 대처하기 위해 40G급 또는 100G급 PON 기술이 사용될 것으로 예상된다. 본고에서는 현재 ITU-T에서 표준화가 진행 중인 NG-PON2(Next Generation PON2) 기술 중 주요기술인 TWDM-PON(Time and Wavelength Division Multiplexing-PON) 기술에 대한 국제 표준화 현황 및 국내외 기술개발 현황을 살펴보고자 한다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.11B
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• pp.1607-1611
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• 2001

The dependence of the performance of 40-Gb/s optical transmission using short pulses on the fiber chromatic dispersion is numerically studied. When very short pulses are used, the wide spectrum of the optical signal and the chromatic dispersion of the fiber interact in such a way that results in the reduction of nonlinear impairments of the transmission performance. The degree of this reduction is determined by the combined effects of chromatic dispersion of the fiber and the strength of the optical signal and the transmission distance. When 3ps-long pulses were used for the transmission, the eye-closure penalty was highest with the dispersion D=4ps/nm/km.

• Journal of the Optical Society of Korea
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• v.12 no.4
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• pp.226-231
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• 2008

40 Gbps WDM Systems using super-Gaussian RZ pulses have been studied by numerical simulation to optimize their performance. The assumption of standard single mode fiber is valid when existing WDM systems are required to upgrade their performance to 40Gbps. It is shown that the standard single mode fiber can transmit optical signals over 720 km (Q > 10) by optimizing optical and electrical filter characteristics at the receiver and by compensation of dispersion. However, it is also shown that ${\pm}0.3%$ dispersion compensation tolerance per span (80 km) could prohibit transmitting over 320km (Q > 10). In addition, a duty cycle of less than 0.4 degrades system performance significantly.

• ETRI Journal
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• v.28 no.2
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• pp.257-259
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• 2006

In this letter, we will evaluate the performance degradation of a 40 km high-speed (40 Gb/s) optical system, induced by optical fiber variations of the chromatic dispersion induced by temperature changes. The chromatic dispersion temperature sensitivity will be estimated based on the signal quality parameters.

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.150-151
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• 2002

파장 분할 다중화(Wavelength division multiplexing ： WDM) 광전송 장치의 용량확대를 위한 방안으로 여러 가지 방법들이 연구 개발되고 있으며, 최근 들어 테라 급(Tb/s) 광전송 연구 결과들이 발표되고 있다. 이러한 장거리 광전송 장치의 광송신기는 LiNbO$_3$ 마하-젠더(Mach-Zehnder) 간섭계형 외부 변조기를 주로 사용하고 있다. 한편 반도체 레이저 집적된 전계 흡수형 변조기(Electro-absorption modulator integrated laser ： EML)를 이용한 외부 변조 방식 적용을 위해서 여러 연구소 및 기업체에서는 40Gb/s의 성능을 지닌 EML의 개발 결과들을 발표하고 있다. (중략)

• Information and Communications Magazine
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• v.25 no.12
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• pp.33-40
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• 2008

멀티코어 프로세서의 등장과 다량의 그래픽 연산을 필요로 하는 모바일 어플리케이션의 등장으로 광대역의 메모리시스템과 이의 저전력 구현의 중요성이 더해지고 있다. 본고에서는 메모리 시스템 인터페이스의 고속 저전력 설계와 측정 기술 개발의 최근 동향에 대해 기술한다. 500GB/s이상의 SoC메모리 대역폭을 실현하기 위해 필요한 기술들과 ${\sim}$mW/Gb/s의 전력 소모를 갖는 저전력 고속 IO설계 방법 등을 소개한다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.2
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• pp.101-111
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• 2008

This paper introduces a high-speed Reed-Solomon(RS) decoder, which reduces the hardware complexity, and presents an RS decoder based FEC architecture which is used for 40Gb/s optical communication systems. We introduce new pipelined degree computationless modified Euclidean(pDCME) algorithm architecture, which has high throughput and low hardware complexity. The proposed 16 channel RS FEC architecture has two 8 channel RS FEC architectures, which has 8 syndrome computation block and shared single KES block. It can reduce the hardware complexity about 30% compared to the conventional 16 channel 3-parallel FEC architecture, which is 4 syndrome computation block and shared single KES block. The proposed RS FEC architecture has been designed and implemented with the $0.18-{\mu}m$ CMOS technology in a supply voltage of 1.8 V. The result show that total number of gate is 250K and it has a data processing rate of 5.1Gb/s at a clock frequency of 400MHz. The proposed area-efficient architecture can be readily applied to the next generation FEC devices for high-speed optical communications as well as wireless communications.

• Information and Communications Magazine
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• v.18 no.11
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• pp.72-81
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• 2001

• ETRI Journal
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• v.45 no.1
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• pp.163-170
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• 2023

We report an electroabsorption modulator (EAM)-integrated distributed Bragg reflector laser diode (DBR-LD) capable of supporting a high data rate and a wide wavelength tuning. The DBR-LD contains two tuning elements, plasma and heater tunings, both of which are implemented in the DBR section, which have blue-shift and red-shift in the Bragg wavelength through a current injection, respectively. The light created from the DBR-LD is intensity-modulated through the EAM voltage, which is integrated monolithically with the DBRLD using a butt-joint coupling method. The fabricated chip shows a threshold current of approximately 8 mA, tuning range of greater than 30 nm, and static extinction ratio of higher than 20 dB while maintaining a side mode suppression ratio of greater than 40 dB under a window of 1550 nm. To evaluate its modulation properties, the chip was bonded onto a mount including a radiofrequency line and a load resistor showing clear eye openings at data rates of 25 Gb/s nonreturn-to-zero and 50 Gb/s pulse amplitude modulation 4-level, respectively.