• Title/Summary/Keyword: 40-GHz

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Design and Fabrication of the Dipole-Fed Planar Array Antenna at X-Band (X밴드용 다이폴 급전 평면배열 안테나 설계 및 제작)

  • Mun, Seong-Ik;Yang, Du-Yeong
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.39 no.5
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    • pp.251-258
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    • 2002
  • In this paper, the dipole-fed planar array antenna applied Yagi-Uda antenna away theory to microstrip antenna is designed and fabricated at X-band. The design procedure of the dipole-fed planar array antenna with the wide bandwidth is presented to be easily practiced to a wireless communication system. The radiation pattern, return loss and bandwidth of the antenna are improved by the finite differential time domain(FDTD) numerical method. The propriety of analysis of planar dipole antenna is proved from the measured data. From the measured results, the antenna maximum gain is 4.9dBi at center frequency of 10GHz and frequency bandwidth is about 40%. Front-to-back ratio is 16dB, and half-power beam-width of E-plane and H-plane are 117$^{\circ}$and 156$^{\circ}$, respectively. When VSWR of antenna is less than 2, the measured results are agreed well with the theoretical values in the frequency range from 7.4GHz to 11.88GHz.

A Study on the development of high gain and high power Ka-band hybrid power amplifier module (고출력, 고이득 Ka-band 하이브리드 전력증폭기 모듈 개발에 관한 연구)

  • Lee, Sang-Hyo;Kim, Hong-Teuk;Jeong, Jin-Ho;Kwon, Young-Woo
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.38 no.11
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    • pp.49-54
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    • 2001
  • In this work, we developed a Ka-band hybrid 4-stage power amplifier module using GaAs pHEMTs and waveguide to microstrip transitions. It has high gain and high output power characteristics. We used a 10 mil- thickness duroid substrate to fabricate this power amplifier and waveguide to microstrip transitions. The fabricated waveguide to microstrip transition showed about 1 dB insertion loss(back to back) at 32 40 GHz. The measured results of power amplifier module showed over 1W output power at 36.1 - 37.1 GHz. And it showed 31 dBm output power, 24 dB power gain and 15 % power-added efficiency(PAE) at 36.5 GHz.

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A Dual-Sprial Line Loaded Monopole Antenna having a Vertical Groundplane for Quadband Applications (수직 접지면을 가지는 4중 대역용 이중 스파이럴 라인 로디드 모노폴 안테나)

  • Kim, Byoung-Chul;Nguyen, Truong Khang;Choo, Ho-Sung;Park, Ik-Mo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.8
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    • pp.899-905
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    • 2008
  • In this paper, we propose a dual-spiral line loaded monopole antenna having a vertical ground plane for quadband applications. The antenna occupies a volume of $38{\times}12{\times}7\;mm^3$ with a $40{\times}92\;mm^2$ ground plane. The measured impedance bandwidths of the antenna based on $VSWR{\le}2$ are approximately of 11.7 % and 24.8 % in the first and second frequency band, respectively. The operating frequency can simultaneously cover Cellular($0.824{\sim}0.894\;GHz$), PCS($1.750{\sim}1.870\;MHz$), UMTS($1.920{\sim}2.170\;MHz$), and IMT-2000($1.885{\sim}2.200\;GHz$) bands. The maximum gains of the antenna are -0.99 dBi, 4.07 dBi, 2.72 dBi, and 4.33 dBi at the center frequencies of the Cellular, PCS, UMTS, and IMT-2000 bands, respectively. Good radiation patterns are experimentally obtained.

Fabrication of GaN Transistor on SiC for Power Amplifier (전력증폭기용 SiC 기반 GaN TR 소자 제작)

  • Kim, Sang-Il;Lim, Byeong-Ok;Choi, Gil-Wong;Lee, Bok-Hyung;Kim, Hyoung-Joo;Kim, Ryun-Hwi;Im, Ki-Sik;Lee, Jung-Hee;Lee, Jung-Soo;Lee, Jong-Min
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.2
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    • pp.128-135
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    • 2013
  • This letter presents the MISHFET with si-doped AlGaN/GaN heterostructure for power amplifier. The device grown on 6H-SiC(0001) substrate with a gate length of 180 nm has been fabricated. The fabricated device exhibited maximum drain current density of 837 mA/mm and peak transconductance of 177 mS/mm. A unity current gain cutoff frequency was 45.6 GHz and maximum frequency of oscillation was 46.5 GHz. The reported output power density was 1.54 W/mm and A PAE(Power Added Efficiency) was 40.24 % at 9.3 GHz.

A FG-CPW Single Balanced Diode Mixer for C-Band Application (C-Band 용 FG-CPW 단일 평형 다이오드 혼합기)

  • Bae, Joung-Sun;Lee, Jong-Chul;Kim, Jong-Heon;Lee, Byung-Je;Kim, Nam-Young
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.12 no.3
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    • pp.339-345
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    • 2001
  • In this paper, FG-CPW (Finite-Ground Coplanar Wave-Guide) balanced diode mixer is presented. Frequency bandwidth is selected for a C-band, which is 5.72~5.82 GHz for RF, 5.58~5.68 GHz for LO, and 140 MHz for IF signals. A rat-race hybrid is designed for the accomplishment of single balanced type. A low pass filter (LPF) with CPW structure is used far good conversion loss and unwanted harmonics suppression. When LO signal with the power of 4 dBm at 5.635 GHz is injected, a conversion loss of 6.2 dB is obtained for the mixer. Also, the LO to RF and LO to IF isolation of 30 dB and 40 dB are obtained, respectively. This mixer can be used in the area on wireless LAN application.

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Realization of a 7.7~8.5GHz 10 W Solid-State Power Amplifier (7.7~8.5 GHz 10 W 반도체 전력 증폭기의 구현에 관한 연구)

  • 박효달;김용구
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.19 no.12
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    • pp.2489-2497
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    • 1994
  • This paper presents the development of a 10 W solid-state hybrid power amplifier(SSPA). operating over $7.7\sim8.5GHz$. The fabrication and measurement of this amplifier are performed with 3 sections, such as the front one for high gain, the middle one for driving, and high power one, to minimize the risk of failure and to increase the easiness of development. and then the final amplifier is realized by connecting 3 sections above mentioned, DC bias circuit, and temperature compensation circuit on one housing. Total small signal gain obtained is about $45\pm1dB$, the input and output return losses are 25 and 27 dB respectively. The output power measured at 1 dB gain compression point for 3 frequencies at 7.7, 8.1, and 8.5 GHz are $39.8\sim40.4dBm$, which is about 10 W. and the 3rd-order harmonic powers of 2 tones test are 13.34 dBc at output power 37.5 dBm. These obtained results satisfies the initially required specification. and the realized SSPA can be installed as a subsystem of the microwave transponder for telecommunication.

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Design of a Circular Polarization Microstrip Patch Antenna for ISM Band Using a T-junction Power Divide (T-junction 전력 분배기를 이용한 ISM 대역의 원형 편파 마이크로스트립 패치 안테나 설계)

  • Kim, Sun-Woong;Kim, Ji-Hye;Kim, Su-Jeong;Park, Si-Hyeon;Choi, Dong-You
    • The Journal of Korean Institute of Information Technology
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    • v.16 no.11
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    • pp.77-84
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    • 2018
  • In this paper, the circular polarization microstrip patch antenna using the T-junction power divider is proposed. The operating frequency of the proposed antenna is ISM band of 2.4GHz and the circular polarization is induced by feeding a phase difference of $90^{\circ}$ in two edges. The structure of the antenna consists of a general patch and a T-junction power divider. Furthermore, to optimize the proposed antenna, it is analyzed the reflection coefficient, the axial ration and the radiation pattern. The impedance bandwidth of the antenna is observed to be 40MHz within a range of 2.39 to 2.43GHz, similarly, the axial ratio bandwidth is observed having the bandwidth of about 12MHz in 2.398 to 2.410GHz range. The radiation pattern of the antenna is seen to be right circular polarization. Furthermore, the gain of the antenna is observed to be 2.04 and 3.4dBic at XZ and YZ-plane, respectively.

26GHz 40nm CMOS Wideband Variable Gain Amplifier Design for Automotive Radar (차량용 레이더를 위한 26GHz 40nm CMOS 광대역 가변 이득 증폭기 설계)

  • Choi, Han-Woong;Choi, Sun-Kyu;Lee, Eun-Gyu;Lee, Jae-Eun;Lim, Jeong-Taek;Lee, Kyeong-Kyeok;Song, Jae-Hyeok;Kim, Sang-Hyo;Kim, Choul-Young
    • Journal of IKEEE
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    • v.22 no.2
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    • pp.408-412
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    • 2018
  • In this paper, a 26GHz variable gain amplifier fabricated using a 40nm CMOS process is studied. In the case of an automobile radar using 79 GHz, it is advantageous in designing and driving to drive down to a low frequency band or to use a low frequency band before up conversion rather than designing and matching the entire circuit to 79 GHz in terms of frequency characteristics. In the case of a Phased Array System that uses time delay through TTD (True Time Delay) in practice, down conversion to a lower frequency is advantageous in realizing a real time delay and reducing errors. For a VGA (Variable Gain Amplifier) operating in the 26GHz frequency band that is 1/3 of the frequency of 79GHz, VDD : 1V, Bias 0.95V, S11 is designed to be <-9.8dB (Mea. High gain mode) and S22 < (Mea. high gain mode), Gain: 2.69dB (Mea. high gain mode), and P1dB: -15 dBm (Mea. high gain mode). In low gain mode, S11 is <-3.3dB (Mea. Low gain mode), S22 <-8.6dB (Mea. low gain mode), Gain: 0dB (Mea. low gain mode), P1dB: -21dBm (Mea. Low gain mode).

Design and Fabrication of Dual Linear Polarization Stack Antenna for 4.7GHz Frequency Band (4.7 GHz 대역에서 동작하는 이중 선형편파 적층 안테나의 설계 및 제작)

  • Joong-Han Yoon;Chan-Se Yu
    • The Journal of the Korea institute of electronic communication sciences
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    • v.18 no.2
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    • pp.251-258
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    • 2023
  • In this paper, we propose DLP(Dual Linear Polarization) stack antenna for private network. The proposed antenna has general stack structure and design airgap between two substrate to obtain the maximum gain. Also, to improve cross polarization isolation, two feeding port is designed to separate for each substrate. The size of each patch antenna is 17.80 mm(W1)×16.70 mm(L1) for lower patch and 18.56 mm(W2)×18.73 mm(L2) for upper patch, which is designed on the FR-4 substrate which thickness (h) is 1.6 mm, and the dielectric constant is 4.3, and which is 40.0 mm(W)×40.0 mm(L) for total size of substrate. From the fabrication and measurement results, bandwidths of 100 MHz (4.74 to 4.84 GHz) for feeding port 1, and 150 MHz (4.67 to 4.82 GHz) for feeding port 2 are obtained on the basis of -10 dB return loss and transmission coefficient S21 is got under the -20 dB. Also, cross polarization isolation between each feeding port obtained

Study on direct optical switching CDM at 40 GHz-band for Radio-over-Fiber(RoF) system (Radio-over-Fiber 시스템을 위한 40 GHz 대역에서 직접 광스위칭 CDMA 연구)

  • 최재원;전영민;변영태;우덕하;박종대;서동선
    • Korean Journal of Optics and Photonics
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    • v.14 no.6
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    • pp.600-605
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    • 2003
  • We have experimentally demonstrated a Direct Optical Switching (DOS) CDMA for future wide-band mobile communication systems at the 40 ㎓ band by using orthogonal (crosscorrelation $\leq$2) unipolar type codes with code length of 16 and chip rate of 2.5 Gcps for radio-over-fiber (RoF) systems. Pulse-amplitude-equalized 40 ㎓ laser pulses were provided by rational-harmonically mode-locking a 10 ㎓ fiber ring laser.