• 제목/요약/키워드: 4-switch

검색결과 1,044건 처리시간 0.028초

펄스 방전을 위한 고전압 스위치 설계 (Design of High Voltage Switch for Pulse Discharging)

  • 아피아 기드온 니모;장성록;류홍제
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2016년도 전력전자학술대회 논문집
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    • pp.361-362
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    • 2016
  • Presented in this paper is the design of a high voltage switch module made up of MOSFETs, pulse transformers and their gate driver circuits compactly fitted onto a single PCB module. The ease by which the switch modules can be configured (series stacking and/or parallel stacking) to meet future load variations allows for flexible operation of this design. In addition, the detailed implementation of the gate driver circuit for reliable and easier switch synchronization is also described in this paper. The stored energy in the capacitor bank of a 15kV, 4.5kJ/s peak power capacitor charger was discharged using the developed high voltage switch, and by experimental results, the operation of the proposed circuit was verified to be effectively used as a switch for pulse discharging.

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FLC SLM을 이용한 편광의존형 2×2 광스위치 (Polarization dependent 2×2 optical switch using ferroelectric liquid crystal (FLC) Spatial Light Modulator(SLM))

  • 김인태;유연석
    • 한국광학회지
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    • 제13권5호
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    • pp.408-413
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    • 2002
  • We demonstrated a polarization dependent type 2$\times$2 optical switch, using a binary reflection type SLM. Reflection type FLC was used as a half wave retardation plate. Two inputs were controlled by each SLM for the desired output direction. In conclusion, in the "1" state the average optical loss was 6.6 ㏈, and in the "0" state the average optical loss was 14.6 ㏈, and measured the switching speed as 75 $mutextrm{s}$. By using this method, a polarization dependent type 2$\times$2 optical switch can be demonstrated and the possibility of a 4-port WDM optical switch also verified.

Numerical Analysis of a Flux-Reversal Machine with 4-Switch Converters

  • Lee, Byoung-Kuk;Kim, Tae-Heoung
    • Journal of Magnetics
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    • 제17권2호
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    • pp.124-128
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    • 2012
  • Many different converter topologies have been developed with a view to use the minimum number of switches in order to reduce construction costs. Among this research, the four-switch converter topology with a novel PWM control technique based on the current controlled PWM method is thought to be a good solution. In this paper, a two dimensional time-stepped voltage source finite-element method (FEM) is used to analyze the characteristics of a Flux-Reversal Machine (FRM) with a 4-switch converter. To validate the proposed computational method, a digital signal processor (DSP) installed controller and prototype FRM are built and experiments performed.

An Efficient Pulse Width Measurement Method using Multiphase Clock Signals for Capacitive Touch Switches

  • Seong, Kwang-Su
    • Journal of Electrical Engineering and Technology
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    • 제8권4호
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    • pp.773-779
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    • 2013
  • We propose an efficient method to measure a pulse width using multiphase clock signals generated from a ring oscillator. These clocks, which have the same frequency and are evenly spaced, give multiple rising edges within a clock cycle. Thus, it is possible to measure a pulse width more accurately than with existing single clock-based methods. The proposed method is applied to a capacitive touch switch. Experimental results show that the capacitive touch switch with the proposed method gives a 118 fF resolution, which is 6.4 times higher than that of the touch switch with a single clock-based pulse width measurement method.

Field Oriented Control for Induction Motor Using Four Switch Three Phases Inverter

  • Tuyen, Nguyen D.;Hoang, Nguyen M.;Lee, Hong-Hee;Chun, Tae-Won
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2008년도 하계학술대회 논문집
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    • pp.216-218
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    • 2008
  • This paper presents a space vector pulse width modulation (SVPWM) technique for four-switch three-phase (4S3P) inverter topology. The method aims to apply Field Oriented Control (FOC) of Induction motor using 4S3P. The simulations are carried out and the experimental results are given to verify the feasibility of this method.

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Design of an Active Inductor-Based T/R Switch in 0.13 μm CMOS Technology for 2.4 GHz RF Transceivers

  • Bhuiyan, Mohammad Arif Sobhan;Reaz, Mamun Bin Ibne;Badal, Md. Torikul Islam;Mukit, Md. Abdul;Kamal, Noorfazila
    • Transactions on Electrical and Electronic Materials
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    • 제17권5호
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    • pp.261-269
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    • 2016
  • A high-performance transmit/receive (T/R) switch is essential for every radio-frequency (RF) device. This paper proposes a T/R switch that is designed in the CEDEC 0.13 μm complementary metal-oxide-semiconductor (CMOS) technology for 2.4 GHz ISM-band RF applications. The switch exhibits a 1 dB insertion loss, a 28.6 dB isolation, and a 35.8 dBm power-handling capacity in the transmit mode; meanwhile, for the 1.8 V/0 V control voltages, a 1.1 dB insertion loss and a 19.4 dB isolation were exhibited with an extremely-low power dissipation of 377.14 μW in the receive mode. Besides, the variations of the insertion loss and the isolation of the switch for a temperature change from - 25℃ to 125℃ are 0.019 dB and 0.095 dB, respectively. To obtain a lucrative performance, an active inductor-based resonant circuit, body floating, a transistor W/L optimization, and an isolated CMOS structure were adopted for the switch design. Further, due to the avoidance of bulky inductors and capacitors, a very small chip size of 0.0207 mm2 that is the lowest-ever reported chip area for this frequency band was achieved.

정렬반얀 망을 이용한 성능이 향상된 스위치설계 (Design of Speed-up switch Using Sort Banyan Networks)

  • 권승탁
    • 한국통신학회논문지
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    • 제28권4B호
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    • pp.282-287
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    • 2003
  • 통신망 스위칭 장치들을 상호 연결하여 구성한다. 스위칭 장치는 경로배정 정보의 의하여 입력포트와 출력포트 사이를 연결하는 역할을 한다. 그런데 반얀 망을 사용하는 대부분의 스위치 망은 두개의 셀 들이 같은 길을 사용하려고 시도할 때 내부 충돌이 발생한다. 본 논문은 입력과 출력사이에 목적지가 같은 두 개의 셀 들이 충돌이 없도록 동시에 두 개 경로를 설정하여 셀 처리율을 향상시키는 개선된 정렬 반얀 망을 제안하고 설계하였다. 하드웨어 설계는 2개의 $4{\times}4$ 정렬 부 블록들과 1개의 ${8\times}8$ 스위칭 망 블록으로 구성하였는데 기존의 정렬망인 베쳐 반얀 망보다 스위치의 셀 처리능력은 4% 향상되었고 정렬 부의 하드웨어 복잡도는 반으로 감소하였다.

4${\times}$4 매트릭스 광스위치의 최적 설계 (An optimal design of 4${\times}$4 optical matrix switch)

  • 최원준;홍성철;이석;김회종;이정일;강광남;조규만
    • 전자공학회논문지A
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    • 제32A권8호
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    • pp.153-165
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    • 1995
  • The design procedure of a GaAs/AlGaAs semiconductor matrix optical switch is presented for a simplified tree architecture in the viewpoint of optical loss. A low loss, 0.537 dB/cm, pin type substrate is designed by considering the loss due to imputity doping at 1.3 $\mu$m wavelength. The operating voltage and the device length of a reversed ${\Delta}{\beta}$ electro-optic directional coupler(EODC) swith which is a cross-point device of the 4${\times}$4 matrix optical switch and the bending loss of rib waveguide are caculated as functions of waveguide parameters and bending parameters. There is an optimum bending radius for some waveguide parameters. It is recommened that higher optical confinement conditions such as wide waveguide width and higher rib-height should be chosen for structural parameters of a low loss and a process insensitive 4${\times}$4 matris optical switch. A 4${\times}$4 optical matrix switch which has a 3 dB loss and a 12 volt operating voltage is designed.

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Switch를 이용한 1.5 GHz 대역 고출력 Cavity 기반 Tunable Filter (High Power Cavity Type Tunable Filter Using Switch for 1.5 GHz Band)

  • 안세훈;이민호;박종철;정계택
    • 한국전자파학회논문지
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    • 제27권1호
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    • pp.1-7
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    • 2016
  • 본 논문에서는 기계식 스위치를 이용한 1.5 GHz 대역 고출력 Cavity 기반 튜너블 필터를 설계하고 제작하였다. 불요파를 제거하기 위해 저역통과필터를 삽입하고, 출력을 추출하기 위해 Coupler를 내장하였으며, 고출력에 적합한 기계식 스위치를 사용하여 튜너블 필터의 시스템을 구성하였다. 저역통과필터는 4~12.75 GHz까지 40 dB 이상의 감쇄 특성을 얻었고, Coupler는 40 dB의 Coupling Value와 55 dB 이상의 Coupling Isolation을 얻었다. 제작된 기계식 스위치를 사용한 튜너블 필터 시스템은 1,495.9~1,510.9 MHz Bypass Mode에서 0.88 dB, 1,495.9~1,500.9 MHz Fil Mode에서 3.29 dB의 삽입손실 특성 및 중심주파수 1,498.4 MHz에서 132 W의 출력전력과 10 ms 이하의 스위칭 절환속도를 얻었다.

금/주석 공융점 접합과 유리 기판의 건식 식각을 이용한 고주파 MEMS 스위치의 기판 단위 실장 (Wafer-Level Package of RF MEMS Switch using Au/Sn Eutectic Bonding and Glass Dry Etch)

  • 강성찬;장연수;김현철;전국진
    • 센서학회지
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    • 제20권1호
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    • pp.58-63
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    • 2011
  • A low loss radio frequency(RF) micro electro mechanical systems(MEMS) switch driven by a low actuation voltage was designed for the development of a new RF MEMS switch. The RF MEMS switch should be encapsulated. The glass cap and fabricated RF MEMS switch were assembled by the Au/Sn eutectic bonding principle for wafer-level packaging. The through-vias on the glass substrate was made by the glass dry etching and Au electroplating process. The packaged RF MEMS switch had an actuation voltage of 12.5 V, an insertion loss below 0.25 dB, a return loss above 16.6 dB, and an isolation value above 41.4 dB at 6 GHz.