• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.153-153
• /
• 2016

Polyoxymethylene copolymer (POM-C) is an attractive and widely used engineering thermoplastic across many industrial sectors owing to outstanding physical, mechanical, self-lubricating and chemical properties. In this research work, the POM-C blocks were irradiated with 1 MeV electron beam energy in five doses (100, 200, 300, 500 and 700 KGy) in vacuum condition at room temperature. The tribological and physico-chemical properties of electron beam irradiated POM-C blocks have been analyzed using Pin on disk tribometer, Raman spectroscopy, SEM-EDS, Optical microscopy, 3D Nano surface profiler system and Contact angle analyzer. Electron beam irradiation at a dose of 100 kGy resulted in a decrease of the friction coefficient and wear loss of POM-C block due to well suited cross-linking, carbonization, free radicals formation and energetic electrons-atoms collisions (physical interaction). It also shows lowest surface roughness and highest water contact angle among all unirradiated and irradiated POM-C blocks. The irradiation doses at 200, 300, 500 and 700 kGy resulted in increase of the friction coefficient as compared to unirradiated POM-C block due to severe chain scission, chemical and physical structural degradation. The electron beam irradiation transferred the wear of unirradiated POM-C block from the abrasive wear, adhesive wear and scraping to mild scraping for the 1 MeV, 100 kGy irradiated POM-C block which is concluded from SEM-EDS and Optical microscopic observations. The degree of improvement for tribological attribute relies on the electron beam irradiation condition (energy and dose rate).

• 열처리공학회지
• /
• 제27권1호
• /
• pp.10-14
• /
• 2014

Niobium nitride coatings have many potential thin film applications due to their chemical inertness, good mechanical properties, temperature stability and superconducting properties. In this study, $NbN_x$ coatings were prepared by inductively coupled plasma (ICP) assisted DC magnetron sputtering method on the surface of AISI 304 austenitic stainless steels. Effects of target power were studied on mechanical and chemical properties of the coatings. The coating structure was analyzed by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The coating hardness was measured by micro-knoop hardness tester. The coating thickness was measured using a 3D profiler and wear characteristics were estimated using a ball-on-disk wear tester. The thickness of the $NbN_x$ coatings increased linearly from 300 nm to 2000 nm as the Nb target power increased, and it showed over $HK_{0.005}$ 4000 hardness above Nb target power of 300 W. Hexagonal ${\delta}^{\prime}$-NbN phase and cubic ${\delta}$-NbN phase were observed in the coating films and the hardness of the NbNx coatings was higher when these two peaks were mixed. The corrosion resistance increased with the increase of the Nb target power.

• 한국공작기계학회논문집
• /
• 제17권4호
• /
• pp.104-111
• /
• 2008

The objective of this study is to evaluate micro end-milling characteristics and tool wear behavior of AlN-hBN composites. First, AlN based composites with hBN contents in the range of 10 to 20vol% were prepared by hot-pressing. Vickers hardness and flexural strength of the prepared composite specimens were measured and compared according to the vol% of hBN variations. Then, cutting force variations were measured and analyzed using a tool dynamometer during the micro end-milling experiments; and machined surface shapes and roughness were investigated using a 3D non-contact type surface profiler. After micro end-milling, worn tools were investigated using a tool microscope and SEM images. From the experimental results, it can be observed that the cutting forces decreased, and surface qualities were improved with increasing hBN contents. At low content of hBN, tool chipping was observed; and tool wear rate decreased with increasing hBN contents. The results of this study insist that proper machining conditions, including tool wear behavior investigation, should be determined for the micro end-milling of AlN-hBN composites for its further application.

• 한국표면공학회지
• /
• 제46권5호
• /
• pp.187-191
• /
• 2013

Niobium nitride (NbN) films were deposited on AISI 304 stainless steels by inductively coupled plasma (ICP) assisted dc magnetron sputtering method at different ICP powers, and the effects of ICP power on the phase formation, mechanical and chemical properties of the films were investigated. X-ray diffraction analysis (XRD) and field emission scanning electron microscopy (FESEM) were used to analyze the crystal structure and micro-knoop hardness was used to measure the hardness of the films. Also, 3-D mechanical profiler and a ball-on-disk wear tester were used to measure the thickness of the films and to estimate wear characteristics, respectively. The thickness of the films decreased but their hardness increased with increasing ICP power, and it was confirmed that only cubic ${\delta}$-NbN(200) remained at high ICP power. At lower ICP powers, a mixture of the hexagonal ${\delta}^{\prime}$-NbN and cubic ${\delta}$-NbN phases was obtained in the films and the hardness decreased. The corrosion potential value increased gradually with increasing ICP power, but the changes of ICP power did not significantly influence the overall corrosion resistance.

• Design & Manufacturing
• /
• 제15권4호
• /
• pp.65-71
• /
• 2021

In the early days of laser invention, it was simply used as a measuring tool, but as lasers became more common, they became an indispensable processing tool in the industry. Short-wavelength lasers are used to make patterns on wafers used in semiconductors depending on the wavelength, such as CO2 laser, YAG laser, green laser, and UV laser. At first, the hole of the PCB board mainly used for electronic parts was not thin and the hole size was large, so a mechanical drill was used. However, in order to realize product miniaturization and high integration, small hole processing lasers have become essential, and pattern exposure for small hole sizes has become essential. This paper intends to analyze the characteristics through patterns by exposing the PCB substrate through DMD and polygon scanner, which are different optical systems. Since the optical systems are different, the size of the patterns was made the same, and exposure was performed under the optimal conditions for each system. Pattern characteristics were analyzed through a 3D profiler. As a result of the analysis, there was no significant difference in line width between the two systems. However, it was confirmed that dmd had better pattern precision and polygon scanner had better productivity.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.363-363
• /
• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2012년도 춘계학술발표대회
• /
• pp.81.2-81.2
• /
• 2012

To fabricate a metal mold for injection molding, hot-embossing and imprinting process, mechanical machining, electro discharge machining (EDM), electrochemical machining (ECM), laser process and wet etching ($FeCl_3$ process) have been widely used. However it is hard to get precise structure with these processes. Electrochemical etching has been also employed to fabricate a micro structure in metal mold. A through mask electrochemical micro machining (TMEMM) is one of the electrochemical etching processes which can obtain finely precise structure. In this process, many parameters such as current density, process time, temperature of electrolyte and distance between electrodes should be controlled. Therefore, it is difficult to predict the result because it has low reliability and reproducibility. To improve it, we investigated this process numerically and experimentally. To search the relation between processing parameters and the results, we used finite element simulation and the commercial finite element method (FEM) software ANSYS was used to analyze the electric field. In this study, it was supposed that the anodic dissolution process is predicted depending on the current density which is one of major parameters with finite element method. In experiment, we used stainless steel (SS304) substrate with various sized square and circular array patterns as an anode and copper (Cu) plate as a cathode. A mixture of $H_2SO_4$, $H_3PO_4$ and DIW was used as an electrolyte. After electrochemical etching process, we compared the results of experiment and simulation. As a result, we got the current distribution in the electrolyte and line profile of current density of the patterns from simulation. And etching profile and surface morphologies were characterized by 3D-profiler(${\mu}$-surf, Nanofocus, Germany) and FE-SEM(S-4800, Hitachi, Japan) measurement. From comparison of these data, it was confirmed that current distribution and line profile of the patterns from simulation are similar to surface morphology and etching profile of the sample from the process, respectively. Then we concluded that current density is more concentrated at the edge of pattern and the depth of etched area is proportional to current density.