• Title/Summary/Keyword: 3D figure

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Design of 900 MHz CMOS Low Noie Amplifier (900 MHz CMOS 저잡음 증폭기의 설계)

  • 윤상영;윤헌일;정용채;정항근;황인갑
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.6
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    • pp.893-899
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    • 2000
  • A 900 MHz low-noise amplifier(LNA) with a measured noise figure of 4.8 dB and an associated gain of 13.2 dB was fabricated in a 0.65 $\mu$m CMOS. The inductive source architecture of offers the possibility of achieving the best noise performance. At 900 MHz, the fabricated LNA dissipates 39 mW from a single 3 V power supply including the bias circuitry and provides -26dB input return loss, -17 dB output return loss, and an input 1-dB compression level of -12 dBm.

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Design of LNA Using EM simulator (EM 시뮬레이터를 이용한 LNA 설계)

  • Choi, Moon-Ho;Kim, Yeong-Seuk;Jung, Sung-Il;Lee, Han-Yeong;Jang, Seuk-Hwan;Lee, Jong-Arc
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.873-876
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    • 2005
  • A low noise amplifier(LNA) using electro-magnetic field simulator is designed in standard 0.25um CMOS process. Integrated spiral inductor is simulated using EM field solver. Then LNA is simulated with active device, capacitor and simulated inductor by EM field solver. A S11 and S21 of -15.45dB and 17.8dB at 2.3GHz as simulation results was achieved. A Noise Figure is 2.92dB. And Measurements show a S11 and S21 of -12.4dB and 17.8dB at 2.3GHz. A Noise Figure of 3.3dB was achieved.

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Performance Degradation of RF SOI MOSFETs in LNA Design Guide Line (RF SOI MOSFETs의 성능저하에 의한 LNA 설계 가이드 라인)

  • Ohm, Woo-Yong;Lee, Byung-Jin
    • 전자공학회논문지 IE
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    • v.45 no.2
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    • pp.1-5
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    • 2008
  • In this work, RF performance degradation due to hot carrier effects in SOI MOSFET have been measured and analyzed. The LNA that designed at $V_{GS}=0.8V$, f=2.5GHz, gain is 16.51dB and noise figure is 1.195dB. After stress at SOI, the LNA's gain and noise figure change of 15.3dB and 1.44dB with before stress.

Front-End Module of 18-40 GHz Ultra-Wideband Receiver for Electronic Warfare System

  • Jeon, Yuseok;Bang, Sungil
    • Journal of electromagnetic engineering and science
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    • v.18 no.3
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    • pp.188-198
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    • 2018
  • In this study, we propose an approach for the design and satisfy the requirements of the fabrication of a small, lightweight, reliable, and stable ultra-wideband receiver for millimeter-wave bands and the contents of the approach. In this paper, we designed and fabricated a stable receiver with having low noise figure, flat gain characteristics, and low noise characteristics, suitable for millimeter-wave bands. The method uses the chip-and-wire process for the assembly and operation of a bare MMIC device. In order to compensate for the mismatch between the components used in the receiver, an amplifier, mixer, multiplier, and filter suitable for wideband frequency characteristics were designed and applied to the receiver. To improve the low frequency and narrow bandwidth of existing products, mathematical modeling of the wideband receiver was performed and based on this spurious signals generated from complex local oscillation signals were designed so as not to affect the RF path. In the ultra-wideband receiver, the gain was between 22.2 dB and 28.5 dB at Band A (input frequency, 18-26 GHz) with a flatness of approximately 6.3 dB, while the gain was between 21.9 dB and 26.0 dB at Band B (input frequency, 26-40 GHz) with a flatness of approximately 4.1 dB. The measured value of the noise figure at Band A was 7.92 dB and the maximum value of noise figure, measured at Band B was 8.58 dB. The leakage signal of the local oscillator (LO) was -97.3 dBm and -90 dBm at the 33 GHz and 44 GHz path, respectively. Measurement was made at the 15 GHz IF output of band A (LO, 33 GHz) and the suppression characteristic obtained through the measurement was approximately 30 dBc.

Determination of The Optimal Binocular Parallax Inducing The Least 3D Visual Fatigue

  • Li, Hyung-Chul O.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1092-1094
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    • 2009
  • The purpose of the research was to figure out the optimal binocular parallax inducing the least 3D visual fatigue. Subjective 3D visual fatigue was measured while the revolution depth and the average depth of an object were manipulated. The optimal binocular parallax was figured out by using data fitting method.

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3D Figure Creation System Based on Content-Awareness for 3D Printing (3D 프린팅을 위한 콘텐츠 인지 기반 3D 개인 피규어 생성 시스템)

  • Lim, Seong-Jae;Hwang, Bon-Woo;Yoon, Seung-Uk;Jeon, Hye-Ryeong;Park, Chang-Joon;Choi, Jin-Sung
    • Journal of the Korea Computer Graphics Society
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    • v.21 no.3
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    • pp.11-16
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    • 2015
  • We present a system for generating 3D personalized figures. This system provides 3D figures model modification and combination functions based on the content-awareness. The integrity of the 3D model must be guaranteed at the time of slicing of the 3D model for 3D printing. In addition to this, with 3D printing, we generally have to print a hollow model in order to save money, time, and the integrity of the print. This paper proposes the automatic algorithm that creates the 3D individual figures with depth sensor and the easy UI functions for deformation, thickness adjustment, and combination of the generated 3D figures model based on the content-awareness. Our proposed method maintains the unique features of the generated 3D figures and ensures the successful 3D printing.

A 0.18-μm CMOS Low-Power and Wideband LNA Using LC BPF Loads (광대역 LC 대역 통과 필터를 부하로 가지는 0.18-μm CMOS 저전력/광대역 저잡음 증폭기 설계)

  • Shin, Sang-Woon;Seo, Yong-Ho;Kim, Chang-Wan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.1
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    • pp.76-80
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    • 2011
  • This paper has proposed a 3~5 GHz low-power and wideband LNA(Low Noise Amplifier), which has been implemented in a 0.18-${\mu}m$ CMOS technology. The proposed LNA has basically the noise-cancelling topology to achieve a balun-function, wideband input matching, and relative low noise figure. In addition, it has utilized a 2nd-order LC-band-pass filter(BPF) as its output load to achieve higher power gain and lower noise figure with the lowest dc power consumption among previously reported works. The proposed amplifier consumes only 3.94 mA from a 1.8 V supply voltage. The simulation results show a power gain of more than +17 dB, a noise figure of less than +4 dB, and an input IP3 of -15.5 dBm.

Study on Front-End Receiver for S-band Active Phased Array Radar (S-대역 능동위상배열레이더용 수신전단기 연구)

  • Kim, Min-Chul;Kim, Wan-Sik;Park, Sang-Hyun;Jeong, Myeong-Deuk
    • Journal of the Korea Institute of Military Science and Technology
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    • v.14 no.5
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    • pp.825-832
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    • 2011
  • In this paper, we described the design and measurement results of a Front-End Receiver for S-band active phased array radar. The Front-End Receiver has input P1dB of -4dBm and IIP3 of 7dBm. The measurement results show that gain is $24{\pm}0.7dB$, noise figure are less than 2.3dB over the frequency range of $fc{\pm}0.2GHz$. The Front-End Receiver can protect the receiver path from large input signals with a maximum peak power of multi-kW and recovery time is less than 0.8us. The measurement results satisfy all specifications.

Design and Characteristics of X-band Monolitic Series Feedback LNA using 0.5$\mu\textrm{m}$GaAs MESFET (0.5$\mu\textrm{m}$-GaAs MESFET을 이용한 X-밴드 모노리식 직렬 궤환 LNA의 설계 및 특성)

  • 전영진;김진명;정윤하
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.5
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    • pp.7-13
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    • 1997
  • A X-band 3-stage monolithic LNA (low noise amplifier) with series feedback has been successfully desined and demonstrated by suign 0.5-$\mu\textrm{m}$ GaAs MESFET. In the design of the 3-stage LNA, the effects of series feedback to the noise figure, the gain, and the stability have been investigated ot find the optimal short stub length. As a result, the inductive series feedback topology which has 10degree short stub in the GaAs MESFET source lead, has been employed in the 1-st stage. The fabricated MMIC LNA's chip size is only 1mm$^{2}$/stage, which is smaller than the previously reported X-band MMIC input/output return losses are less than -10dB and -15dB, respectively. The noise figure (NF) is less than 2.6dB. The measured data show good agreement with the simulated values.

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Variable gain LNA Design for 2.4GHz Wireless LAN (2.4GHz 무선랜용 가변이득 저잡음 증폭기 설계)

  • 강태영;박영호;임지훈;박정호
    • Proceedings of the IEEK Conference
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    • 2003.07a
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    • pp.621-624
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    • 2003
  • In this paper, two Cascode Low Noise Variable Gain Amplifiers are proposed for wide dynamic range and constant Noise Figure for frequency range of 2.4GHz. Designed Variable Gain Low Noise Amplifier are for Wireless Local Area Network (WLAN) applications. A gain is higher than 17dB and the noise figure is approximately 1.3dB and the input VSWR is better than 2:1.

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